Design techniques for low noise and high speed A/D converters

Analog-to-digital (A/D) conversion is a process that bridges the real analog world to digital signal processing. It takes a continuous-time, continuous amplitude signal as its input and outputs a discrete-time, discrete-amplitude signal. The resolution and sampling rate of an A/D converter vary depending on the application. Recently, there has been a growing demand for broadband (>1 MHz), high-resolution (>14bits) A/D converters. Applications that demand such converters include asymmetric digital subscriber line (ADSL) modems, cellular systems, high accuracy instrumentation, and medical imaging systems. This thesis suggests some design techniques for such high resolution and high sampling rate A/D converters. As the A/D converter performance keeps on increasing it becomes increasingly difficult for the input driver to settle to required accuracy within the sampling time. This is because of the use of larger sampling capacitor (increased resolution) and a decrease in sampling time (higher speed). So there is an increasing trend to have a driver integrated onchip along with A/D converter. The first contribution of this thesis is to present a new precharge scheme which enables integrating the input buffer with A/D converter in standard CMOS process. The buffer also uses a novel multi-path common mode feedback scheme to stabilize the common mode loop at high speeds. Another major problem in achieving very high Signal to Noise and Distortion Ratio (SNDR) is the capacitor mismatch in Digital to Analog Converters (DAC) inherent in the A/D converters. The mismatch between the capacitor causes harmonic distortion, which may not be acceptable. The analysis of Dynamic Element Matching (DEM) technique as applicable to broadband data-converters is presented and a novel second order notch-DEM is introduced. In this thesis we present a method to calibrate the DAC. We also show that a combination of digital error correction and dynamic element matching is optimal in terms of test time or calibration time. Even if we are using dynamic element matching techniques, it is still critical to get the best matching of unit elements possible in a given technology. The matching obtained may be limited either by random variations in the unit capacitor or by gradient effects. In this thesis we present layout techniques for capacitor arrays, and the matching results obtained in measurement from a test-chip are presented. Thus we present various design techniques for high speed and low noise A/D converters in this thesis. The techniques described are quite general and can be applied to most of the types of A/D converters

Design techniques for low-power multi-GS/s analog-to-digital converters

Ultra-high-speed (>10GS/s), medium-resolution (5~6bit), low-power (<50mW) analog-to-digital converter can find it application in the areas of digital oscilloscopes and next-generation serial link receivers. There are several challenges to enable a successful design, however. First, the time-interleaved architecture is required in order to achieve over 10GS/s sampling rate, with the trade-off of the number of the channels and the sampling rate in each channel. Phase misalignment and channel mismatch must be considered too. Second, timing accuracy, especially dynamic jitter of sampling clock becomes a major concern at ultra-high frequency, and certain techniques must be taken to address it. Finally, to achieve low power consumption, Flash architecture is not suitable to serve as the sub-ADC, and a low-power sub-ADC that can work at relatively high speed need to be designed. A single channel, asynchronous successive approximation (SA) ADC with improved feedback delay has been fabricated in 40nm CMOS. Compared with a conventional SA structure that employs a single quantizer controlled by a digital feedback logic loop, the proposed SA-ADC employs multiple quantizers for each conversion bit, clocked by an asynchronous ripple clock that is generated after each quantization. Hence, the sampling rate of the 6-bit ADC is limited only by the six delays of the Capacitive-DAC settling and each comparator’s quantization delay, as the digital logic delay is eliminated. Measurement results of the 40nm-CMOS SA-ADC achieves peak SNDR of 32.9dB at 1GS/s and 30.5dB at 1.25GS/s, consuming 5.28mW and 6.08mW respectively, leading to FoM of 148fJ/conversion-step and 178fJ/conversion-step, in a core area less than 170µm by 85µm. Based on the previous work of sub-ADC, a 12-GS/s 5-b 50-mW ADC is designed in 40nm CMOS with 8 time-interleaved channels of Flash-SA hybrid structure each running at 1.5GS/s. A modified bootstrapped switch is used in the track-and-hold circuit, introducing a global clock signal to synchronize the sampling instants of each individual channel, therefore improve the phase alignment and reduce distortion. The global clock is provided by a CML buffer which is injected by off-chip low-noise sine-wave signal, so that the RMS dynamic jitter is low for better ENOB performance. Measurement results show that the 12GS/s ADC can achieve a SNDR of 25.8dB with the input signal frequency around DC and 22.8dB around 2GHz, consuming 32.1mW, leading to FoM of 237.3fJ/conversion-step, in a core area less than 800µm by 500µm

Design Techniques for High-Performance SAR A/D Converters

The design of electronics needs to account for the non-ideal characteristics of the device technologies used to realize practical circuits. This is particularly important in mixed analog-digital design since the best device technologies are very different for digital compared to analog circuits. One solution for this problem is to use a calibration correction approach to remove the errors introduced by devices, but this adds complexity and power dissipation, as well as reducing operation speed, and so must be optimised. This thesis addresses such an approach to improve the performance of certain types of analog-to-digital converter (ADC) used in advanced telecommunications, where speed, accuracy and power dissipation currently limit applications. The thesis specifically focuses on the design of compensation circuits for use in successive approximation register (SAR) ADCs. ADCs are crucial building blocks in communication systems, in general, and for mobile networks, in particular. The recently launched fifth generation of mobile networks (5G) has required new ADC circuit techniques to meet the higher speed and lower power dissipation requirements for 5G technology. The SAR has become one of the most favoured architectures for designing high-performance ADCs, but the successive nature of the circuit operation makes it difficult to reach ∼GS/s sampling rates at reasonable power consumption. Here, two calibration techniques for high-performance SAR ADCs are presented. The first uses an on-chip stochastic-based mismatch calibration technique that is able to accurately compute and compensate for the mismatch of a capacitive DAC in a SAR ADC. The stochastic nature of the proposed calibration method enables determination of the mismatch of the CAPDAC with a resolution much better than that of the DAC. This allows the unit capacitor to scale down to as low as 280aF for a 9-bit DAC. Since the CAP-DAC causes a large part of the overall dynamic power consumption and directly determines both the sizes of the driving and sampling switches and the size of the input capacitive load of the ADC and the kT/C noise power, a small CAP-DAC helps the power efficiency. To validate the proposed calibration idea, a 10-bit asynchronous SAR ADC was fabricated in 28-nm CMOS. Measurement results show that the proposed stochastic calibration improves the ADC’s SFDR and SNDR by 14.9 dB, 11.5 dB, respectively. After calibration, the fabricated SAR ADC achieves an ENOB of 9.14 bit at a sampling rate of 85 MS/s, resulting in a Walden FoM of 10.9 fJ/c-s. The second calibration technique is a timing-skew calibration for a time-interleaved (TI) SAR ADC that calibrates/computes the inter-channel timing and offset mismatch simultaneously. Simulation results show the effectiveness of this calibration method. When used together, the proposed mismatch calibration technique and the timing-skew calibration technique enables a TI SAR ADC to be designed that can achieve a sampling rate of ∼GS/s with 10-bit resolution and a power consumption as low as ∼10mW; specifications that satisfy the requirements of 5G technology

Ultra-low-power SRAM design in high variability advanced CMOS

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 163-181).Embedded SRAMs are a critical component in modern digital systems, and their role is preferentially increasing. As a result, SRAMs strongly impact the overall power, performance, and area, and, in order to manage these severely constrained trade-offs, they must be specially designed for target applications. Highly energy-constrained systems (e.g. implantable biomedical devices, multimedia handsets, etc.) are an important class of applications driving ultra-low-power SRAMs. This thesis analyzes the energy of an SRAM sub-array. Since supply- and threshold-voltage have a strong effect, targets for these are established in order to optimize energy. Despite the heavy emphasis on leakage-energy, analysis of a high-density 256x256 sub-array in 45nm LP CMOS points to two necessary optimizations: (1) aggressive supply-voltage reduction (in addition to Vt elevation), and (2) performance enhancement. Important SRAM metrics, including read/write/hold-margin and read-current, are also investigated to identify trade-offs of these optimizations. Based on the need to lower supply-voltage, a 0.35V 256kb SRAM is demonstrated in 65nm LP CMOS. It uses an 8T bit-cell with peripheral circuit-assists to improve write-margin and bit-line leakage. Additionally, redundancy, to manage the increasing impact of variability in the periphery, is proposed to improve the area-offset trade-off of sense-amplifiers, demonstrating promise for highly advanced technology nodes. Based on the need to improve performance, which is limited by density constraints, a 64kb SRAM, using an offset-compensating sense-amplifier, is demonstrated in 45nm LP CMOS with high-density 0.25[mu]m2 bit-cells.(cont.) The sense-amplifier is regenerative, but non -strobed, overcoming timing uncertainties limiting performance, and it is single-ended, for compatibility with 8T cells. Compared to a conventional strobed sense-amplifier, it achieves 34% improvement in worst-case access-time and 4x improvement in the standard deviation of the access-time.by Naveen Verma.Ph.D

Switched Capacitor Circuit Techniques for High Performance CMOS Analog Circuits

Switched capacitor (SC) circuits are the main building blocks in many structures such as filters, data converters, sampling circuits and sampled-data amplifiers. The key challenge is to design such circuits which are the prime components of any IoT system with low power consumption without compromising on the performance. In this dissertation, power efficient novel switched capacitor techniques have been explored to suppress noise and mitigate the slewing in switched capacitor-based analog to digital converters (ADCs). First, a two-step incremental ADC(IADC) with pseudo-pseudo differential (PPD) structure is presented. PPD integrators are implemented with added correlated level shifting (CLS) technique to relax the output swing and gain requirements of the operational transconductance amplifier (OTA). The two-step IADC is implemented with the first step configured as a single-bit first-order IADC and the second step, using a two-capacitor SAR-assisted extended counting to further enhances the accuracy. The design is demonstrated by implementing the prototype in 65nm CMOS technology. Second, new passive charge compensation techniques are described. The proposed techniques mitigate the slewing in the OTA by providing a controlled amount of charge to the output of the OTA. The effectiveness of the proposed charge compensation technique in a switched-capacitor integrator is demonstrated in a second-order DSM. Circuit-level simulations including the effects of process, voltage and temperature variations are also presented. The extracted simulation results show a 12 dB improvement in SNDR using the proposed technique compared to conventional DSM without charge compensation

Circuit techniques for low-voltage and high-speed A/D converters

The increasing digitalization in all spheres of electronics applications, from telecommunications systems to consumer electronics appliances, requires analog-to-digital converters (ADCs) with a higher sampling rate, higher resolution, and lower power consumption. The evolution of integrated circuit technologies partially helps in meeting these requirements by providing faster devices and allowing for the realization of more complex functions in a given silicon area, but simultaneously it brings new challenges, the most important of which is the decreasing supply voltage. Based on the switched capacitor (SC) technique, the pipelined architecture has most successfully exploited the features of CMOS technology in realizing high-speed high-resolution ADCs. An analysis of the effects of the supply voltage and technology scaling on SC circuits is carried out, and it shows that benefits can be expected at least for the next few technology generations. The operational amplifier is a central building block in SC circuits, and thus a comparison of the topologies and their low voltage capabilities is presented. It is well-known that the SC technique in its standard form is not suitable for very low supply voltages, mainly because of insufficient switch control voltage. Two low-voltage modifications are investigated: switch bootstrapping and the switched opamp (SO) technique. Improved circuit structures are proposed for both. Two ADC prototypes using the SO technique are presented, while bootstrapped switches are utilized in three other prototypes. An integral part of an ADC is the front-end sample-and-hold (S/H) circuit. At high signal frequencies its linearity is predominantly determined by the switches utilized. A review of S/H architectures is presented, and switch linearization by means of bootstrapping is studied and applied to two of the prototypes. Another important parameter is sampling clock jitter, which is analyzed and then minimized with carefully-designed clock generation and buffering. The throughput of ADCs can be increased by using parallelism. This is demonstrated on the circuit level with the double-sampling technique, which is applied to S/H circuits and a pipelined ADC. An analysis of nonidealities in double-sampling is presented. At the system level parallelism is utilized in a time-interleaved ADC. The mismatch of parallel signal paths produces errors, for the elimination of which a timing skew insensitive sampling circuit and a digital offset calibration are developed. A total of seven prototypes are presented: two double-sampled S/H circuits, a time-interleaved ADC, an IF-sampling self-calibrated pipelined ADC, a current steering DAC with a deglitcher, and two pipelined ADCs employing the SO technique.reviewe

High Speed Camera Chip

abstract: The market for high speed camera chips, or image sensors, has experienced rapid growth over the past decades owing to its broad application space in security, biomedical equipment, and mobile devices. CMOS (complementary metal-oxide-semiconductor) technology has significantly improved the performance of the high speed camera chip by enabling the monolithic integration of pixel circuits and on-chip analog-to-digital conversion. However, for low light intensity applications, many CMOS image sensors have a sub-optimum dynamic range, particularly in high speed operation. Thus the requirements for a sensor to have a high frame rate and high fill factor is attracting more attention. Another drawback for the high speed camera chip is its high power demands due to its high operating frequency. Therefore, a CMOS image sensor with high frame rate, high fill factor, high voltage range and low power is difficult to realize. This thesis presents the design of pixel circuit, the pixel array and column readout chain for a high speed camera chip. An integrated PN (positive-negative) junction photodiode and an accompanying ten transistor pixel circuit are implemented using a 0.18 µm CMOS technology. Multiple methods are applied to minimize the subthreshold currents, which is critical for low light detection. A layout sharing technique is used to increase the fill factor to 64.63%. Four programmable gain amplifiers (PGAs) and 10-bit pipeline analog-to-digital converters (ADCs) are added to complete on-chip analog to digital conversion. The simulation results of extracted circuit indicate ENOB (effective number of bits) is greater than 8 bits with FoM (figures of merit) =0.789. The minimum detectable voltage level is determined to be 470μV based on noise analysis. The total power consumption of PGA and ADC is 8.2mW for each conversion. The whole camera chip reaches 10508 frames per second (fps) at full resolution with 3.1mm x 3.4mm area.Dissertation/ThesisMasters Thesis Electrical Engineering 201

MODELING AND CONTROL OF DIRECT-CONVERSION HYBRID SWITCHED-CAPACITOR DC-DC CONVERTERS

Efficient power delivery is increasingly important in modern computing, communications, consumer and other electronic systems, due to the high power demand and thermal concerns accompanied by performance advancements and tight packaging. In pursuit of high efficiency, small physical volume, and flexible regulation, hybrid switched-capacitor topologies have emerged as promising candidates for such applications. By incorporating both capacitors and inductors as energy storage elements, hybrid topologies achieve high power density while still maintaining soft charging and efficient regulation characteristics. However, challenges exist in the hybrid approach. In terms of reliability, each flying capacitor should be maintained at a nominal `balanced\u27 voltage for robust operation (especially during transients and startup), complicating the control system design. In terms of implementation, switching devices in hybrid converters often need complex gate driving circuits which add cost, area, and power consumption. This dissertation explores techniques that help to mitigate the aforementioned challenges. A discrete-time state space model is derived by treating the hybrid converter as two subsystems, the switched-capacitor stage and the output filter stage. This model is then used to design an estimator that extracts all flying capacitor voltages from the measurement of a single node. The controllability and observability of the switched-capacitor stage reveal the fundamental cause of imbalance at certain conversion ratios. A new switching sequence, the modified phase-shifted pulse width modulation, is developed to enable natural balance in originally imbalanced scenarios. Based on the model, a novel control algorithm, constant switch stress control, is proposed to achieve both output voltage regulation and active balance with fast dynamics. Finally, the design technique and test result of an integrated hybrid switched-capacitor converter are reported. A proposed gate driving strategy eliminates the need for external driving supplies and reduces the bootstrap capacitor area. On-chip mixed signal control ensures fast balancing dynamics and makes hard startup tolerable. This prototype achieves 96.9\% peak efficiency at 5V:1.2V conversion and a startup time of 12$\mu s$, which is over 100 times faster than the closest prior art. With the modeling, control, and design techniques introduced in this dissertation, the application of hybrid switched-capacitor converters may be extended to scenarios that were previously challenging for them, allowing enhanced performance compared to using traditional topologies. For problems that may require future attention, this dissertation also points to possible directions for further improvements

A 128K-bit CCD buffer memory system

A prototype system was implemented to demonstrate that CCD's can be applied advantageously to the problem of low power digital storage and particularly to the problem of interfacing widely varying data rates. 8K-bit CCD shift register memories were used to construct a feasibility model 128K-bit buffer memory system. Peak power dissipation during a data transfer is less than 7 W., while idle power is approximately 5.4 W. The system features automatic data input synchronization with the recirculating CCD memory block start address. Descriptions are provided of both the buffer memory system and a custom tester that was used to exercise the memory. The testing procedures and testing results are discussed. Suggestions are provided for further development with regards to the utilization of advanced versions of CCD memory devices to both simplified and expanded memory system applications