Packaging of RF Mems Switching Functions on Alumina Substrate

Recently the strong demands in wireless communication requires expanding development for the application of RF MEMS (Radio Frequency micro electro mechanical systems) sensing devices such as micro-switches, tunable capacitors because it offers lower power consumption, lower losses, higher linearity and higher Q factors compared with conventional communications components. To accelerate commercialisation of RF MEMS products, development for packaging technologies is one of the most critical issues should be solved beforehand.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

RF MEMS Based Tunable Bowtie Shaped Substrate Integrated Waveguide Filter

A tunable bandpass filter based on a technique that utilizes substrate integrated waveguide (SIW) and double coupling is presented. The SIW based bandpass filter is implemented using a bowtie shaped resonator structure. The bowtie shaped filter exhibits similar performance as found in rectangular and circular shaped SIW based bandpass filters. This concept reduces the circuit foot print of SIW; along with miniaturization high quality factor is maintained by the structure. The design methodology for single-pole triangular resonator structure is presented. Two different inter-resonator couplings of the resonators are incorporated in the design of the two-pole bowtie shaped SIW bandpass filter, and switching between the two couplings using a packaged RF MEMS switch delivers the tunable filter. A tunning of 1 GHz is achieved for two frequency states of 6.3 and 7.3 GHz. The total size of the circuit is 70mm x 36mm x 0.787 mm (LxWxH)

Resistive damping implementation as a method to improve controllability in stiff ohmic RF-MEMS switches

This paper presents in detail the entire procedure of calculating the bias resistance of an ohmic RF-MEMS switch, controlled under resistive damping (charge drive technique). In case of a very stiff device, like the North Eastern University switch, the actuation control under resistive damping is the only way to achieve controllability. Due to the short switching time as well as the high actuation voltage, it is not practical to apply a tailored control pulse (voltage drive control technique). Implementing a bias resistor of 33 MΩ in series with the voltage source, the impact velocity of the cantilever has been reduced 80 % (13.2 from 65.9 cm/s), eliminating bouncing and high initial impact force during the pull-down phase. However, this results in an affordable cost of switching time increase from 2.38 to 4.34 μs. During the release phase the amplitude of bouncing has also been reduced 34 % (174 from 255 nm), providing significant improvement in both switching operation phases of the switch. © 2013 Springer-Verlag Berlin Heidelberg

Field trial of a 15 Tb/s adaptive and gridless OXC supporting elastic 1000-fold all-optical bandwidth granularity

An adaptive gridless OXC is implemented using a 3D-MEMS optical backplane plus optical modules (sub-systems) that provide elastic spectrum and time switching functionality. The OXC adapts its architecture on demand to fulfill the switching requirements of incoming traffic. The system is implemented in a seven-node network linked by installed fiber and is shown to provide suitable architectures on demand for three scenarios with increasing traffic and switching complexity. In the most complex scenario, signals of mixed bit-rates and modulation formats are successfully switched with flexible per-channel allocation of spectrum, time and space, achieving over 1000-fold bandwidth granularity and 1.5 Tb/s throughput with good end-to-end performance

Experimental demonstration of gridless spectrum and time optical switching

An experimental demonstration of gridless spectrum and time switching is presented. We propose and demonstrate a bit-rate and modulation-format independent optical cross-connect architecture, based on gridless spectrum selective switch, 20-ms 3D-MEMS and 10-ns PLZT optical switches, that supports arbitrary spectrum allocation and transparent time multiplexing. The architecture is implemented in a four-node field-fiber-linked testbed to transport continuous RZ and NRZ data channels at 12.5, 42.7 and 170.8 Gb/s, and selectively groom sub-wavelength RZ channels at 42.7 Gb/s. We also showed that the architecture is dynamic and can be reconfigured to meet the routing requirements of the network traffic. Results show error-free operation with an end-to-end power penalty between 0.8 dB and 5 dB for all continuous and sub-wavelength channels

Analysis and design of an all metal in line series ohmic RF MEMS switch for microwave applications

Copyright © 2010 IEEE. Reprinted from IEEE Conference Proceedings. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Brunel University's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.Abstract: - This paper presents the analysis, design and simulation of an all metal in line series ohmic RF MEMS switch. The proposed switch is indented to be used in the frequency range between DC and 10GHz. The switching characteristics of the proposed switch fulfill all the requirements as concerns loss, isolation, linearity, power handling and small size/power consumption. The specific design of the cantilever (hammerhead) and the distributed actuation force ensure the reliability and the controllability of the switch and the relatively simple design (all metal) the robustness and high fabrication yield

An easy to control all-metal in-line-series ohmic RF MEMS switch

Copyright @ 2010 Springer-VerlagThe analysis, design and simulation of a novel easy to control all-metal in-line-series ohmic RF MEMS switch is presented, for applications where the operating frequency ranges from DC to 4 GHz. The proposed switch, due to its unique shape and size, assures high isolation and great linearity fulfilling the necessary requirements as concerns loss, power handling and power consumption. Simplicity has been set as the key success factor implying robustness and high fabrication yield. On the other hand, the specially designed cantilever-shape (hammerhead) allows distributed actuation force ensuring high controllability as well as reliability making the presented RF MEMS switch one of its kind

On the design of an Ohmic RF MEMS switch for reconfigurable microstrip antenna applications

This paper presents the analysis, design and simulation of a direct contact (dc) RF MEMS switch specified for reconfigurable microstrip array antennas. The proposed switch is indented to be built on PCB via a monolithic technology together with the antenna patches. The proposed switch will be used to allow antenna beamforming in the operating frequency range between 2GHz and 4GHz. This application requires a great number of these switches to be integrated with an array of microstrip patch elements. The proposed switch fulfills the switching characteristics as concerns the five requirements (loss, linearity, voltage/power handling, small size/power consumption, temperature), following a relatively simple design, which ensures reliability, robustness and high fabrication yiel

Frequency reconfigurable patch antenna for 4G LTE applications

A compact printed multi-band frequency reconfigurable patch antenna for 4G LTE applications is presented in this paper (50 x 60 x 1.6 mm3). The antenna consists of W-shaped and Inverted-U shaped patch lines connected in a Tree-shape on the front side of the antenna. The back-side of the antenna contains a 90°-tilted T-shaped strip connected with an Inverted-L shaped strip which is shorted with a patch on the front side for increasing the electrical length to cover lower frequency bands. Frequency reconfigurability is achieved by inserting three switches i.e., PIN diodes. The most critical part of this work is the designing of RLC-based DC line circuits for providing the DC biasing to the PIN diodes used as switches and inserting them at optimum locations. This antenna is reconfigurable among eight different 4G LTE frequency bands including 0.9 GHz, 1.4 GHz, 1.5 GHz, 1.6 GHz, 1.7 GHz, 1.8 GHz, 2.6 GHz, 3.5 GHz and WLAN band 2.5 GHz. The antenna exhibits different radiation patterns having a different direction of peak gain at different frequencies and for different switching combinations. The antenna is simulated with CST, and a prototype is fabricated to compare the measured and simulated results with good accuracy

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transition (MIT) materials great candidates for direct current (DC) and radio frequency (RF) switching applications. In the literature, germanium telluride (GeTe), a PCM, and vanadium dioxide (VO2), an MIT material have been widely investigated for DC and RF switching applications due to their remarkable contrast in their OFF/ON state resistivity values. In this review, innovations in design, fabrication, and characterization associated with these PCM and MIT material-based RF switches, have been highlighted and critically reviewed from the early stage to the most recent works. We initially report on the growth of PCM and MIT materials and then discuss their DC characteristics. Afterwards, novel design approaches and notable fabrication processes; utilized to improve switching performance; are discussed and reviewed. Finally, a brief vis-á-vis comparison of resistivity, insertion loss, isolation loss, power consumption, RF power handling capability, switching speed, and reliability is provided to compare their performance to radio frequency microelectromechanical systems (RF MEMS) switches; which helps to demonstrate the current state-of-the-art, as well as insight into their potential in future applications