In-situ Aberration Monitoring Using Phase Wheel Targets

Aberration metrology is critical to the manufacture of quality lithography lenses in order to meet strict optical requirements. Additionally, it is becoming increasingly important to be able to measure and monitor lens performance in an IC production environment on a regular basis. The lithographer needs to understand the influence of aberrations on imaging and any changes that may occur in the aberration performance of the lens between assembly and application, and over the course of using an exposure tool. This paper will present a new method for the detection of lens aberrations that may be employed during standard lithography operation. The approach allows for the detection of specific aberration types and trends, as well as levels of aberration, though visual inspection of high resolution images of resist patterns and fitting of the aberrated wavefront. The approach consists of a test target made up of a 180-degree phase pattern array in a “phase wheel” configuration. The circular phase regions in the phase wheel are arranged so that their response to lens aberration is interrelated and the regions respond uniquely to specific aberrations, depending on their location within the target. This test method offers an advantage because of the sensitivity to particular aberration types, the unique response of multiple zones of the test target to aberrations, and the ease with which aberrations can be distinguished. The method of lens aberration detection is based on the identification of the deviations that occur between the images printed with the phase wheel target and images that would be produced in the absence of aberration. This is carried out through the use of lithography simulation, where simulated images can be produced without aberration and with various levels of lens aberration. Comparisons of printed resist images to simulated resist images are made while the values of the coefficients for the primary Zernike aberrations are varied

Measuring aberrations in lithographic projection systems with phase wheel targets

A significant factor in the degradation of nanolithographic image fidelity is optical wavefront aberration. Aerial image sensitivity to aberrations is currently much greater than in earlier lithographic technologies, a consequence of increased resolution requirements. Optical wavefront tolerances are dictated by the dimensional tolerances of features printed, which require lens designs with a high degree of aberration correction. In order to increase lithographic resolution, lens numerical aperture (NA) must continue to increase and imaging wavelength must decrease. Not only do aberration magnitudes scale inversely with wavelength, but high-order aberrations increase at a rate proportional to NA2 or greater, as do aberrations across the image field. Achieving lithographic-quality diffraction limited performance from an optical system, where the relatively low image contrast is further reduced by aberrations, requires the development of highly accurate in situ aberration measurement. In this work, phase wheel targets are used to generate an optical image, which can then be used to both describe and monitor aberrations in lithographic projection systems. The use of lithographic images is critical in this approach, since it ensures that optical system measurements are obtained during the system\u27s standard operation. A mathematical framework is developed that translates image errors into the Zernike polynomial representation, commonly used in the description of optical aberrations. The wavefront is decomposed into a set of orthogonal basis functions, and coefficients for the set are estimated from image-based measurements. A solution is deduced from multiple image measurements by using a combination of different image sets. Correlations between aberrations and phase wheel image characteristics are modeled based on physical simulation and statistical analysis. The approach uses a well-developed rigorous simulation tool to model significant aspects of lithography processes to assess how aberrations affect the final image. The aberration impact on resulting image shapes is then examined and approximations identified so the aberration computation can be made into a fast compact model form. Wavefront reconstruction examples are presented together with corresponding numerical results. The detailed analysis is given along with empirical measurements and a discussion of measurement capabilities. Finally, the impact of systematic errors in exposure tool parameters is measureable from empirical data and can be removed in the calibration stage of wavefront analysis

Advanced Lithography Simulation Tools for Development and Analysis of Wide-Field High Numerical Aperture Projection Optical Systems

Industrial demands for integrated circuits of higher speed and complexity have required the development of advanced lithographic exposure tools capable of sub-half micron resolution over increasingly larger fields. To this end, i-line and deep-uv tools employing Variable, high numerical aperture (NA) objectives are being aggressively developed. The design and manufacture of these advanced optical systems has also grown in complexity, since tighter tolerances on resolution and image placement must be maintained over the larger lens field. At the same time, usable focus and exposure latitude must be retained. The influence of lens aberrations on image formation under different illumination conditions, along with their non-intuitive nature has required the development of simulation tools that allow both the designer and the user of these systems to better understand their implications. These tools can be used to investigate and optimize the lithography process, including the effects of emerging technologies such as phase-shift masking, oblique illumination and frequency plane filtering./super 1,2,3/ This paper presents a method for determining the effects and interactions of various aberrations and illumination conditions using a statistically designed experhnent./super 4/ Fundamental differences in the way the aerial image is formed when varying the pupil energy distribution in the presence of aberrations are presented, as are examples of some of the more interesting effects

Automated Aberration Extraction Using Phase Wheel Targets

An approach to in-situ wavefront aberration measurement is explored. The test is applicable to sensing aberrations from the image plane of a microlithography projection system or a mask inspection tool. A set of example results is presented which indicate that the method performs well on lenses with a Strehl ratio above 0.97. The method uses patterns produced by an open phase figure1 to determine the deviation of the target image from its ideal shape due to aberrations. A numerical solution in the form of Zernike polynomial coefficients is reached by modeling the object interaction with aberrated pupil function using the nonlinear optimization routine over the possible deformations to give an accurate account of the image detail in 2-D. The numerical accuracy for the example below indicated superb performance of the chosen target shapes with only a single illumination setup

Study of aberrations of stepper lenses in-situ using phase shifting point diffraction interferometry

Stepper lenses are tested by the lens manufacturer using various interferometric methods like phase measurement interferometry (PMI), before they are assembled onto the stepper or scanner. Once the system is set up, there are a few methods to study the lens aberrations in-situ using interferometry. The methods currently used are direct ones like direct aerial image measurement (DAIM) or indirect ones in which images of lines and spaces are formed in the photoresist and the aberrations inferred from scanning electron microscope (SEM) images of these. We propose using phase shifting point diffraction interferometry (PSPDI) for the purpose of measuring aberrations in-situ. The method has the advantages of being simple, and of having relaxed coherence length requirements and applicability over a wide wavelength range. We present results from a prototype experiment done on a 436 nm optic on an optical bench using a 442 nm He-Cd laser as source

Reduction of Line Edge Roughness (LER) in Interference-Like Large Field Lithography

Line edge roughness (LER) is seen as one of the most crucial challenges to be addressed in advanced technology nodes. In order to alleviate it, several options were explored in this work for the interference-like lithography imaging conditions. The most straight forward option was to scale interference lithography (IL) for large field integrated circuit (IC) applications. IL not only serves as a simple method to create high resolution period patterns, but, it also provides the highest theoretical contrast achievable compared to other optical lithography systems. Higher contrast yields a smaller transition region between the low and high intensity parts of the image, therefore, inherently lowers LER. Two of the challenges that would prohibit scaling IL for large field IC applications were addressed in this work: (1) field size limitations, and (2) magnification correction (i.e., pitch fine-tuning) ability. Experimental results showed less than 0.5 nm pitch adjustment capability using fused silica wedges mounted on rotational stages at 300 nm pitch pattern. A detailed discussion on maximum practical IL field size was outlined by considering the subsequent trim exposures and optical path difference effects between the interfering diffraction orders. The practical limit on the IL field size was assessed to be 10 mm for the conditions specified in this work. One of the contributors of LER is the mask absorber roughness. To mitigate it, two methods were explored that are also applicable to scanners working under interference-like conditions: (1) aerial image averaging via directional translation, and (2) pupil plane filtering. Experiments on pupil plane filtering approach were performed at Imec in Leuven, Belgium, on the ASML:NXT1950i scanner equipped with FlexWAVE wavefront manipulator. Utilizing an optimized phase filter at the pupil plane and a programmed roughness mask, the transfer of 200 nm roughness period to the wafer plane was eliminated. This mitigation effect was found to be strongly dependent on the focus