DESIGN, MODELING, OPTIMIZATION, AND BENCHMARKING OF INTERCONNECTS AND SCALING TECHNOLOGIES AND THEIR CIRCUIT AND SYSTEM LEVEL IMPACT

This research focuses on the future of integrated circuit (IC) scaling technologies at the device and back end of line (BEOL) level. This work includes high level modeling of different technologies and quantifying potential performance gains on a circuit and system level. From the device side, this research looks at the scaling challenges and the future scaling drivers for conventional charge-based devices implemented at the 7nm technology node and beyond. It examines the system-level performance of stacking device logic in addition to tunneling field effect transistors (TFET) and their potential as beyond-CMOS devices. Finally, this research models and benchmarks BEOL scaling challenges and evaluates proposed technological advancements such as metal barrier scaling for copper interconnects and replacing local interconnects with ruthenium. Potential impact on performance, power, and area of these interconnect technologies is quantified for fully placed and routed circuits.Ph.D

Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation

International audienc

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Optimal Power Delivery Strategy in Modern VLSI Design

Department of Electrical EngineeringIn a modern very-large-scale integration (VLSI) designs, heterogeneous architectural structures and various three-dimensional (3D) integration methods have been used in a hybrid manner. Recently, the industry has combined 3D VLSI technology with the heterogeneous technology of modern VLSI called chiplet. The 3D heterogeneous architectural structure is growing attention because it reduces costs and time-to-market by increasing manufacturing yield with high integration rate and modularization. However, a main design concern of heterogeneous 3D architectural structure is power management for lowering power consumption with maintaining the required power integrity from IR drop. Although the low-power design can be realized in front-end-of-line level by reduced power supply complementary metal???oxide???semiconductor technologies, the overall low-power system performance is available with a proper design of power delivery network (PDN) for chip-level modules and system-level architectural structure. Thus, there is a demand for both the coanalysis and optimization for both chip-level and system-level. We analyzed and optimized power delivery on-chip in various 3D integration environments, and we also have proposed a chip-package-PCB coanalysis methodology at the system level. For through-silicon-via (TSV)-based 3D integration circuit (IC), We have investigated and analyzed the voltage noise in a multi-layer 3D stacking with partial element equivalent circuit (PEEC)-based on-chip PDN and frequency-dependent TSV models. We also have proposed a wire-added multi-paired on-chip PDN structure to reduce voltage noise to reduce IR drop. The performance of TSV-based 3D ICs has also been improved by reducing wake-up time through our proposed adaptive power gating strategy with tapered TSVs. For die-to-wafer 3D IC, we have proposed a power delivery pathfinding methodology, which seeks to identify a nearly optimal PDN for a given design and PDN specification. Our pathfinding methodology exploits models for routability and worst IR drop, which helps reducing iterations between PDN design and circuit design in 3D IC implementation. We also have extended the observation to system-level, we have proposed a power integrity coanalysis methodology for multiple power domains in high-frequency memory systems. Our coanalysis methodology can analyze the tendencies in power integrity by using parametric methods with consideration of package-on-package integration. We have proved that our methodology can predict similar peak-to-peak ripple voltages that are comparable with the realistic simulations of high-speed low-power memory interfaces. Finally, we have proposed analysis and optimization methodologies that are generally applicable to various integration methods used in modern VLSI designs as computer-aided-design-based solutions.clos

Applications of Multi-Terminal Memristive Devices: A Review

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal devices, whose practical realization has been demonstrated within a broad range of different technologies. For electron devices, the memristive functionality can be generally attributed to a state modification, whose dynamics can be engineered to target a specific application. In this review paper, we show examples of two-terminal Resistive RAMs (ReRAM) for standalone memory and Field Programmable Gate Arrays (FPGA) applications. Moreover, a Generic Memory Structure (GMS) utilizing two ReRAMs for 3D-FPGA is discussed. In addition, we show that trap charging dynamics can explain some of the memristive effects previously reported for Schottky-barrier field-effect Si nanowire transistors (SB SiNW FETs). Moreover, the SB SiNW FETs do show additional memristive functionality due to trap charging at the metal/semiconductor surface. The combination of these two memristive effects into multi-terminal MOSFET devices gives rise to new opportunities for both memory and logic applications as well as new sensors based on the physical mechanism that originate memristance. Finally, the multi-terminal memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process

Enhanced Hardware Security Using Charge-Based Emerging Device Technology

The emergence of hardware Trojans has largely reshaped the traditional view that the hardware layer can be blindly trusted. Hardware Trojans, which are often in the form of maliciously inserted circuitry, may impact the original design by data leakage or circuit malfunction. Hardware counterfeiting and IP piracy are another two serious issues costing the US economy more than $200 billion annually. A large amount of research and experimentation has been carried out on the design of these primitives based on the currently prevailing CMOS technology. However, the security provided by these primitives comes at the cost of large overheads mostly in terms of area and power consumption. The development of emerging technologies provides hardware security researchers with opportunities to utilize some of the otherwise unusable properties of emerging technologies in security applications. In this dissertation, we will include the security consideration in the overall performance measurements to fully compare the emerging devices with CMOS technology. The first approach is to leverage two emerging devices (Silicon NanoWire and Graphene SymFET) for hardware security applications. Experimental results indicate that emerging device based solutions can provide high level circuit protection with relatively lower performance overhead compared to conventional CMOS counterpart. The second topic is to construct an energy-efficient DPA-resilient block cipher with ultra low-power Tunnel FET. Current-mode logic is adopted as a circuit-level solution to countermeasure differential power analysis attack, which is mostly used in the cryptographic system. The third investigation targets on potential security vulnerability of foundry insider\u27s attack. Split manufacturing is adopted for the protection on radio-frequency (RF) circuit design

Méthodologies de conception ASIC pour des systèmes sur puce 3D hétérogènes à base de réseaux sur puce 3D

Dans cette thèse, nous étudions les architectures 3D NoC grâce à des implémentations de conception physiques en utilisant la technologie 3D réel mis en oeuvre dans l'industrie. Sur la base des listes d'interconnexions en déroute, nous procédons à l'analyse des performances d'évaluer le bénéfice de l'architecture 3D par rapport à sa mise en oeuvre 2D. Sur la base du flot de conception 3D proposé en se concentrant sur la vérification temporelle tirant parti de l'avantage du retard négligeable de la structure de microbilles pour les connexions verticales, nous avons mené techniques de partitionnement de NoC 3D basé sur l'architecture MPSoC y compris empilement homogène et hétérogène en utilisant Tezzaron 3D IC technlogy. Conception et mise en oeuvre de compromis dans les deux méthodes de partitionnement est étudiée pour avoir un meilleur aperçu sur l'architecture 3D de sorte qu'il peut être exploitée pour des performances optimales. En utilisant l'approche 3D homogène empilage, NoC topologies est explorée afin d'identifier la meilleure topologie entre la topologie 2D et 3D pour la mise en œuvre MPSoC 3D sous l'hypothèse que les chemins critiques est fondée sur les liens inter-routeur. Les explorations architecturales ont également examiné les différentes technologies de traitement. mettant en évidence l'effet de la technologie des procédés à la performance d'architecture 3D en particulier pour l'interconnexion dominant du design. En outre, nous avons effectué hétérogène 3D d'empilage pour la mise en oeuvre MPSoC avec l'approche GALS de style et présenté plusieurs analyses de conception physiques connexes concernant la conception 3D et la mise en œuvre MPSoC utilisant des outils de CAO 2D. Une analyse plus approfondie de l'effet microbilles pas à la performance de l'architecture 3D à l'aide face-à-face d'empilement est également signalé l'identification des problèmes et des limitations à prendre en considération pendant le processus de conception.In this thesis, we study the exploration 3D NoC architectures through physical design implementations using real 3D technology used in the industry. Based on the proposed 3D design flow focusing on timing verification by leveraging the benefit of negligible delay of microbumps structure for vertical connections, we have conducted partitioning techniques for 3D NoC-based MPSoC architecture including homogeneous and heterogeneous stacking using Tezzaron 3D IC technlogy. Design and implementation trade-off in both partitioning methods is investigated to have better insight about 3D architecture so that it can be exploited for optimal performance. Using homogeneous 3D stacking approach, NoC architectures are explored to identify the best topology between 2D and 3D topology for 3D MPSoC implementation. The architectural explorations have also considered different process technologies highlighting the wire delay effect to the 3D architecture performance especially for interconnect-dominated design. Additionally, we performed heterogeneous 3D stacking of NoC-based MPSoC implementation with GALS style approach and presented several physical designs related analyses regarding 3D MPSoC design and implementation using 2D EDA tools. Finally we conducted an exploration of 2D EDA tool on different 3D architecture to evaluate the impact of 2D EDA tools on the 3D architecture performance. Since there is no commercialize 3D design tool until now, the experiment is important on the basis that designing 3D architecture using 2D EDA tools does not have a strong and direct impact to the 3D architecture performance mainly because the tools is dedicated for 2D architecture design.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts

The 3D integration is the most promising technological solution to track the level of integration dictated by Moore's Law (see more than Moore, Moore versus more). It leads to important research for a dozen years. It can superimpose different circuits and components in one box. Its main advantage is to allow a combination of heterogeneous and highly specialized technologies for the establishment of a complete system, while maintaining a high level of performance with very short connections between the different circuits. The objective of this work is to provide consistent modeling via crossing, and / or contacts in the substrate, with various degrees of finesse / precision to allow the high-level designer to manage and especially to optimize the partitioning between the different strata. This modelization involves the development of multiple views at different levels of abstraction: the physical model to "high level" model. This would allow to address various issues faced in the design process: - The physical model using an electromagnetic simulation based on 2D or 3D ( finite element solver ) is used to optimize the via (materials, dimensions etc..) It determines the electrical performance of the via, including high frequency. Electromagnetic simulations also quantify the coupling between adjacent via. - The analytical compact of via their coupling model, based on a description of transmission line or Green cores is used for the simulations at the block level and Spice type simulations. Analytical models are often validated against measurements and / or physical models.L’intégration 3D est la solution technologique la plus prometteuse pour suivre le niveau d’intégration dictée par la loi de Moore (cf. more than Moore, versus more Moore). Elle entraine des travaux de recherche importants depuis une douzaine d’années. Elle permet de superposer différents circuits et composants dans un seul boitier. Son principal avantage est de permettre une association de technologies hétérogènes et très spécialisées pour la constitution d’un système complet, tout en préservant un très haut niveau de performance grâce à des connexions très courtes entre ces différents circuits. L’objectif de ce travail est de fournir des modélisations cohérentes de via traversant, ou/et de contacts dans le substrat, avec plusieurs degrés de finesse/précision, pour permettre au concepteur de haut niveau de gérer et surtout d’optimiser le partitionnement entre les différentes strates. Cette modélisation passe par le développement de plusieurs vues à différents niveaux d’abstraction: du modèle physique au modèle « haut niveau ». Elle devait permettre de répondre à différentes questions rencontrées dans le processus de conception :- le modèle physique de via basé sur une simulation électromagnétique 2D ou 3D (solveur « éléments finis ») est utilisé pour optimiser l’architecture du via (matériaux, dimensions etc.) Il permet de déterminer les performances électriques des via, notamment en haute fréquence. Les simulations électromagnétiques permettent également de quantifier le couplage entre via adjacents. - le modèle compact analytique de via et de leur couplage, basé sur une description de type ligne de transmission ou noyaux de Green, est utilisé pour les simulations au niveau bloc, ainsi que des simulations de type Spice. Les modèles analytiques sont souvent validés par rapport à des mesures et/ou des modèles physiques