High Performance Integrated Circuit Blocks for High-IF Wideband Receivers

Due to the demand for high‐performance radio frequency (RF) integrated circuit design in the past years, a system‐on‐chip (SoC) that enables integration of analog and digital parts on the same die has become the trend of the microelectronics industry. As a result, a major requirement of the next generation of wireless devices is to support multiple standards in the same chip‐set. This would enable a single device to support multiple peripheral applications and services. Based on the aforementioned, the traditional superheterodyne front‐end architecture is not suitable for such applications as it would require a complete receiver for each standard to be supported. A more attractive alternative is the highintermediate frequency (IF) radio architecture. In this case the signal is digitalized at an intermediate frequency such as 200MHz. As a consequence, the baseband operations, such as down‐conversion and channel filtering, become more power and area efficient in the digital domain. Such architecture releases the specifications for most of the front‐end building blocks, but the linearity and dynamic range of the ADC become the bottlenecks in this system. The requirements of large bandwidth, high frequency and enough resolution make such ADC very difficult to realize. Many ADC architectures were analyzed and Continuous‐Time Bandpass Sigma‐Delta (CT‐BP‐ΣΔ) architecture was found to be the most suitable solution in the high‐IF receiver architecture since they combine oversampling and noise shaping to get fairly high resolution in a limited bandwidth. A major issue in continuous‐time networks is the lack of accuracy due to powervoltage‐ temperature (PVT) tolerances that lead to over 20% pole variations compared to their discrete‐time counterparts. An optimally tuned BP ΣΔ ADC requires correcting for center frequency deviations, excess loop delay, and DAC coefficients. Due to these undesirable effects, a calibration algorithm is necessary to compensate for these variations in order to achieve high SNR requirements as technology shrinks. In this work, a novel linearization technique for a Wideband Low‐Noise Amplifier (LNA) targeted for a frequency range of 3‐7GHz is presented. Post‐layout simulations show NF of 6.3dB, peak S21 of 6.1dB, and peak IIP3 of 21.3dBm, respectively. The power consumption of the LNA is 5.8mA from 2V. Secondly, the design of a CMOS 6th order CT BP‐ΣΔ modulator running at 800 MHz for High‐IF conversion of 10MHz bandwidth signals at 200 MHz is presented. A novel transconductance amplifier has been developed to achieve high linearity and high dynamic range at high frequencies. A 2‐bit quantizer with offset cancellation is alsopresented. The sixth‐order modulator is implemented using 0.18 um TSMC standard analog CMOS technology. Post‐layout simulations in cadence demonstrate that the modulator achieves a SNDR of 78 dB (~13 bit) performance over a 14MHz bandwidth. The modulator’s static power consumption is 107mW from a supply power of ± 0.9V. Finally, a calibration technique for the optimization of the Noise Transfer Function CT BP ΣΔ modulators is presented. The proposed technique employs two test tones applied at the input of the quantizer to evaluate the noise transfer function of the ADC, using the capabilities of the Digital Signal Processing (DSP) platform usually available in mixed‐mode systems. Once the ADC output bit stream is captured, necessary information to generate the control signals to tune the ADC parameters for best Signal‐to‐Quantization Noise Ratio (SQNR) performance is extracted via Least‐ Mean Squared (LMS) software‐based algorithm. Since the two tones are located outside the band of interest, the proposed global calibration approach can be used online with no significant effect on the in‐band content

Design of a 125 mhz tunable continuous-time bandpass modulator for wireless IF applications

Bandpass sigma-delta modulators combine oversampling and noise shaping to get very high resolution in a limited bandwidth. They are widely used in applications that require narrowband high-resolution conversion at high frequencies. In recent years interests have been seen in wireless system and software radio using sigma-delta modulators to digitize signals near the front end of radio receivers. Such applications necessitate clocking the modulators at a high frequency (MHz or above). Therefore a loop filter is required in continuous-time circuits (e.g., using transconductors and integrators) rather than discretetime circuits (e.g., using switched capacitors) where the maximum clocking rate is limited by the bandwidth of Opamp, switchÂs speed and settling-time of the circuitry. In this work, the design of a CMOS fourth-order bandpass sigma-delta modulator clocking at 500 MHz for direct conversion of narrowband signals at 125 MHz is presented. A new calibration scheme is proposed for the best signal-to-noise-distortion-ratio (SNDR) of the modulator. The continuous-time loop filter is based on Gm-C resonators. A novel transconductance amplifier has been developed with high linearity at high frequency. Qfactor of filter is enhanced by tunable negative impedance which cancels the finite output impendence of OTA. The fourth-order modulator is implemented using 0.35 mm triplemetal standard analog CMOS technology. Postlayout simulation in CADENCE demonstrates that the modulator achieves a SNDR of 50 dB (~8 bit) performance over a 1 MHz bandwidth. The modulatorÂs power consumption is 302 mW from supply power of ± 1.65V

Time-based noise-shaping techniques for time-to-digital and analog-to-digital converters

In this dissertation, time-based signal processing techniques and their applications in oversampling and noise-shaping data converters are examined. These techniques demonstrate the ability to shift the burden of high performance analog circuits from the compressed voltage-domain to the augmented time-domain. First, the potential of high order noise-shaping and phase-domain feedback in time-to-digital converters (TDCs) is explored. A prototype phase reference, second-order continuous-time delta-sigma TDC for sensor applications was fabricated in 90nm CMOS and achieves 64 dB dynamic range in 1MHz signal bandwidth. Second, an ultra-high performance oscillator-based delta-sigma modulator architecture is investigated. The proposed circuit is a third-order continuous-time PLL-Based Delta-Sigma Modulator with simulated 77 dB SNDR in 40MHz signal bandwidth with OSR of 16, and is fabricated in 65nm CMOS