Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets

A Spectral-Scanning Nuclear Magnetic Resonance Imaging (MRI) Transceiver

An integrated spectral-scanning nuclear magnetic resonance imaging (MRI) transceiver is implemented in a 0.12 mum SiGe BiCMOS process. The MRI transmitter and receiver circuitry is designed specifically for small-scale surface MRI diagnostics applications where creating low (below 1 T) and inhomogeneous magnetic field is more practical. The operation frequency for magnetic resonance detection and analysis is tunable from 1 kHz to 37 MHz, corresponding to 0-0.9 T magnetization for ^1H (hydrogen). The concurrent measurement bandwidth is approximately one frequency octave. The chip can also be used for conventional narrowband nuclear magnetic resonance (NMR) spectroscopy from 1 kHz up to 250 MHz. This integrated transceiver consists of both the magnetic resonance transmitter which generates the required excitation pulses for the magnetic dipole excitation, and the receiver which recovers the responses of the dipoles

Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance

Low Power Processor Architectures and Contemporary Techniques for Power Optimization – A Review

The technological evolution has increased the number of transistors for a given die area significantly and increased the switching speed from few MHz to GHz range. Such inversely proportional decline in size and boost in performance consequently demands shrinking of supply voltage and effective power dissipation in chips with millions of transistors. This has triggered substantial amount of research in power reduction techniques into almost every aspect of the chip and particularly the processor cores contained in the chip. This paper presents an overview of techniques for achieving the power efficiency mainly at the processor core level but also visits related domains such as buses and memories. There are various processor parameters and features such as supply voltage, clock frequency, cache and pipelining which can be optimized to reduce the power consumption of the processor. This paper discusses various ways in which these parameters can be optimized. Also, emerging power efficient processor architectures are overviewed and research activities are discussed which should help reader identify how these factors in a processor contribute to power consumption. Some of these concepts have been already established whereas others are still active research areas. © 2009 ACADEMY PUBLISHER

Dynamic Virtual Page-based Flash Translation Layer with Novel Hot Data Identification and Adaptive Parallelism Management

Solid-state disks (SSDs) tend to replace traditional motor-driven hard disks in high-end storage devices in past few decades. However, various inherent features, such as out-of-place update [resorting to garbage collection (GC)] and limited endurance (resorting to wear leveling), need to be reduced to a large extent before that day comes. Both the GC and wear leveling fundamentally depend on hot data identification (HDI). In this paper, we propose a hot data-aware flash translation layer architecture based on a dynamic virtual page (DVPFTL) so as to improve the performance and lifetime of NAND flash devices. First, we develop a generalized dual layer HDI (DL-HDI) framework, which is composed of a cold data pre-classifier and a hot data post-identifier. Those can efficiently follow the frequency and recency of information access. Then, we design an adaptive parallelism manager (APM) to assign the clustered data chunks to distinct resident blocks in the SSD so as to prolong its endurance. Finally, the experimental results from our realized SSD prototype indicate that the DVPFTL scheme has reliably improved the parallelizability and endurance of NAND flash devices with improved GC-costs, compared with related works.Peer reviewe