55,273 research outputs found
FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation
A new internally compensated low drop-out voltage
regulator based on the cascoded flipped voltage follower is
presented in this paper. Adaptive biasing current and fast
charging/discharging paths have been added to rapidly
charge and discharge the parasitic capacitance of the pass
transistor gate, thus improving the transient response. The
proposed regulator was designed with standard 65-nm
CMOS technology. Measurements show load and line
regulations of 433.80 μV/mA and 5.61 mV/V, respectively.
Furthermore, the output voltage spikes are kept under
76 mV for 0.1 mA to 100 mA load variations and 0.9 V to
1.2 V line variations with rise and fall times of 1 μs. The
total current consumption is 17.88 μA (for a 0.9 V supply
voltage).Ministerio de EconomÃa y Competitividad TEC2015-71072-C3-3-RConsejerÃa de EconomÃa, Innovación y Ciencia. Junta de AndalucÃa P12-TIC-186
Advances on CMOS image sensors
This paper offers an introduction to the technological advances of image sensors designed using
complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review
some of those technological advances and examine potential disruptive growth directions for CMOS
image sensors and proposed ways to achieve them. Those advances include breakthroughs on
image quality such as resolution, capture speed, light sensitivity and color detection and advances on
the computational imaging. The current trend is to push the innovation efforts even further as the
market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost
sensors. Although CMOS image sensors are currently used in several different applications from
consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and
a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the
integration of several signal processing techniques and are driving the impressive advancement of the
computational imaging. With this paper, we offer a very comprehensive review of methods,
techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact
the images sensor applications and markets
Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals
Multimedia applications are driving wireless network operators to add high-speed data services such as Edge (E-GPRS), WCDMA (UMTS) and WLAN (IEEE 802.11a,b,g) to the existing GSM network. This creates the need for multi-mode cellular handsets that support a wide range of communication standards, each with a different RF frequency, signal bandwidth, modulation scheme etc. This in turn generates several design challenges for the analog and digital building blocks of the physical layer. In addition to the above-mentioned protocols, mobile devices often include Bluetooth, GPS, FM-radio and TV services that can work concurrently with data and voice communication. Multi-mode, multi-band, and multi-standard mobile terminals must satisfy all these different requirements. Sharing and/or switching transceiver building blocks in these handsets is mandatory in order to extend battery life and/or reduce cost. Only adaptive circuits that are able to reconfigure themselves within the handover time can meet the design requirements of a single receiver or transmitter covering all the different standards while ensuring seamless inter-interoperability. This paper presents analog and digital base-band circuits that are able to support GSM (with Edge), WCDMA (UMTS), WLAN and Bluetooth using reconfigurable building blocks. The blocks can trade off power consumption for performance on the fly, depending on the standard to be supported and the required QoS (Quality of Service) leve
Recommended from our members
Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.
Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance
Communication channel analysis and real time compressed sensing for high density neural recording devices
Next generation neural recording and Brain-
Machine Interface (BMI) devices call for high density or distributed
systems with more than 1000 recording sites. As the
recording site density grows, the device generates data on the
scale of several hundred megabits per second (Mbps). Transmitting
such large amounts of data induces significant power
consumption and heat dissipation for the implanted electronics.
Facing these constraints, efficient on-chip compression techniques
become essential to the reduction of implanted systems power
consumption. This paper analyzes the communication channel
constraints for high density neural recording devices. This paper
then quantifies the improvement on communication channel
using efficient on-chip compression methods. Finally, This paper
describes a Compressed Sensing (CS) based system that can
reduce the data rate by > 10x times while using power on
the order of a few hundred nW per recording channel
Low Power Processor Architectures and Contemporary Techniques for Power Optimization – A Review
The technological evolution has increased the number of transistors for a given die area significantly and increased the switching speed from few MHz to GHz range. Such inversely proportional decline in size and boost in performance consequently demands shrinking of supply voltage and effective power dissipation in chips with millions of transistors. This has triggered substantial amount of research in power reduction techniques into almost every aspect of the chip and particularly the processor cores contained in the chip. This paper presents an overview of techniques for achieving the power efficiency mainly at the processor core level but also visits related domains such as buses and memories. There are various processor parameters and features such as supply voltage, clock frequency, cache and pipelining which can be optimized to reduce the power consumption of the processor. This paper discusses various ways in which these parameters can be optimized. Also, emerging power efficient processor architectures are overviewed and research activities are discussed which should help reader identify how these factors in a processor contribute to power consumption. Some of these concepts have been already established whereas others are still active research areas. © 2009 ACADEMY PUBLISHER
- …