Surface Feature Engineering through Nanosphere Lithography

How surface geometries can be selectively manipulated through nanosphere lithography (NSL) is discussed. Self-assembled monolayers and multilayers of nanospheres have been studied for decades and have been applied to lithography for almost as long. When compared to the most modern, state-of-the-art techniques, NSL offers comparable feature resolution with many advantages over competing technologies

Nanoimprint Lithography Technology and Applications

Nanoimprint Lithography (NIL) has been an interesting and growing field in recent years since its beginnings in the mid-1990s. During that time, nanoimprinting has undergone significant changes and developments and nowadays is a technology used in R&D labs and industrial production processes around the world. One of the exciting things about nanoimprinting process is its remarkable versatility and the broad range of applications. This reprint includes ten articles, which represent a small glimpse of the challenges and possibilities of this technology. Six contributions deal with nanoimprint processes aiming at specific applications, while the other four papers focus on more general aspects of nanoimprint processes or present novel materials. Several different types of nanoimprint processes are used: plate-to-plate, roll-to-plate, and roll-to-roll. Plate-to-plate NIL here also includes the use of soft and flexible stamps. The application fields in this reprint are broad and can be identified as plasmonics, superhydrophibicity, biomimetics, optics/datacom, and life sciences, showing the broad applicability of nanoimprinting. The sections on the nanoimprint process discuss filling and wetting aspects during nanoimprinting as well as materials for stamps and imprinting

Nanostructuring GaN using microsphere lithography

The authors report on the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography. Self-assembled hexagonally packed silica microsphere arrays were formed on GaN wafers by spin coating and tilting. By precision control of process parameters, a monolayer can be formed over a wide region. The silica microspheres act as a hard mask for pattern transfer of the nanostructures. After dry etching, arrays of nanopillars were formed on the surface of the wafer. The ordered nanostructures can be clearly seen in the scanning electron microscopy images, while photoluminescence measurements revealed a twofold enhancement of light emission intensity. © 2008 American Vacuum Society.published_or_final_versio

Progress in coherent lithography using table-top extreme ultraviolet lasers

2016 Spring.Includes bibliographical references.Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography

Towards High Throughput Large Area Metalens Fabrication using UV-Nanoimprint lithography and Bosch Deep Reactive Ion Etching

We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by use of standard industrial high throughput silicon processing techniques: UV Nano Imprint Lithography (UV-NIL) combined with continuous Reactive Ion Etching (RIE) and pulsed Bosch Deep Reactive Ion Etching (DRIE). As the research field of metasurfaces moves towards applications these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing Electron Beam Lithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high throughput production of relevance to commercial applications. Lens efficiencies are measured to be 30% and 17% at wavelengths {\lambda} = 1.55$\mu$m and {\lambda} = 1.31$\mu$m, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges