334 research outputs found

    Toward large-scale access-transistor-free memristive crossbars

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    Abstract — Memristive crossbars have been shown to be excel-lent candidates for building an ultra-dense memory system be-cause a per-cell access-transistor may no longer be necessary. However, the elimination of the access-transistor introduces sev-eral parasitic effects due to the existence of partially-selected de-vices during memory accesses, which could limit the scalability of access-transistor-free (ATF) memristive crossbars. In this paper we discuss these challenges in detail and describe some solutions addressing these challenges at multiple levels of design abstrac-tion. I

    Device Modeling and Circuit Design of Neuromorphic Memory Structures

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    The downscaling of CMOS technology and the benefits gleaned thereof have made it the cornerstone of the semiconductor industry for many years. As the technology reaches its fundamental physical limits, however, CMOS is expected to run out of steam instigating the exploration of new nanoelectronic devices. Memristors have emerged as promising candidates for future computing paradigms, specifically, memory arrays and neuromorphic circuits. Towards this end, this dissertation will explore the use of two memristive devices, namely, Transition Metal Oxide (TMO) devices and Insulator Metal Transition (IMT) devices in constructing neuromorphic circuits. A compact model for TMO devices is first proposed and verified against experimental data. The proposed model, unlike most of the other models present in the literature, leverages the instantaneous resistance of the device as the state variable which facilitates parameter extraction. In addition, a model for the forming voltage of TMO devices is developed and verified against experimental data and Monte Carlo simulations. Impact of the device geometry and material characteristics of the TMO device on the forming voltage is investigated and techniques for reducing the forming voltage are proposed. The use of TMOs in syanptic arrays is then explored and a multi-driver write scheme is proposed that improves their performance. The proposed technique enhances voltage delivery across the selected cells via suppressing the effective line resistance and leakage current paths, thus, improving the performance of the crossbar array. An IMT compact model is also developed and verified against experiemntal data and electro-thermal device simulations. The proposed model describes the device as a memristive system with the temperature being the state variable, thus, capturing the temperature dependent resistive switching of the IMT device in a compact form suitable for SPICE implementation. An IMT based Integrate-And-Fire neuron is then proposed. The IMT neuron leverages the temperature dynamics of the device to deliver the functionality of the neuron. The proposed IMT neuron is more compact than its CMOS counterparts as it alleviates the need for complex CMOS circuitry. Impact of the IMT device parameters on the neuron\u27s performance is then studied and design considerations are provided

    Thermal Heating in ReRAM Crossbar Arrays: Challenges and Solutions

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    Increasing popularity of deep-learning-powered applications raises the issue of vulnerability of neural networks to adversarial attacks. In other words, hardly perceptible changes in input data lead to the output error in neural network hindering their utilization in applications that involve decisions with security risks. A number of previous works have already thoroughly evaluated the most commonly used configuration - Convolutional Neural Networks (CNNs) against different types of adversarial attacks. Moreover, recent works demonstrated transferability of the some adversarial examples across different neural network models. This paper studied robustness of the new emerging models such as SpinalNet-based neural networks and Compact Convolutional Transformers (CCT) on image classification problem of CIFAR-10 dataset. Each architecture was tested against four White-box attacks and three Black-box attacks. Unlike VGG and SpinalNet models, attention-based CCT configuration demonstrated large span between strong robustness and vulnerability to adversarial examples. Eventually, the study of transferability between VGG, VGG-inspired SpinalNet and pretrained CCT 7/3x1 models was conducted. It was shown that despite high effectiveness of the attack on the certain individual model, this does not guarantee the transferability to other models.Comment: 18 page

    Applications of memristors in conventional analogue electronics

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    This dissertation presents the steps employed to activate and utilise analogue memristive devices in conventional analogue circuits and beyond. TiO2 memristors are mainly utilised in this study, and their large variability in operation in between similar devices is identified. A specialised memristor characterisation instrument is designed and built to mitigate this issue and to allow access to large numbers of devices at a time. Its performance is quantified against linear resistors, crossbars of linear resistors, stand-alone memristive elements and crossbars of memristors. This platform allows for a wide range of different pulsing algorithms to be applied on individual devices, or on crossbars of memristive elements, and is used throughout this dissertation. Different ways of achieving analogue resistive switching from any device state are presented. Results of these are used to devise a state-of-art biasing parameter finder which automatically extracts pulsing parameters that induce repeatable analogue resistive switching. IV measurements taken during analogue resistive switching are then utilised to model the internal atomic structure of two devices, via fittings by the Simmons tunnelling barrier model. These reveal that voltage pulses modulate a nano-tunnelling gap along a conical shape. Further retention measurements are performed which reveal that under certain conditions, TiO2 memristors become volatile at short time scales. This volatile behaviour is then implemented into a novel SPICE volatile memristor model. These characterisation methods of solid-state devices allowed for inclusion of TiO2 memristors in practical electronic circuits. Firstly, in the context of large analogue resistive crossbars, a crosspoint reading method is analysed and improved via a 3-step technique. Its scaling performance is then quantified via SPICE simulations. Next, the observed volatile dynamics of memristors are exploited in two separate sequence detectors, with applications in neuromorphic engineering. Finally, the memristor as a programmable resistive weight is exploited to synthesise a memristive programmable gain amplifier and a practical memristive automatic gain control circuit.Open Acces
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