Second OH Overtone Excitation And Statistical Dissociation Dynamics Of Peroxynitrous Acid

The second OH overtone transition of the trans-perp conformer of peroxynitrous acid (tp-HOONO) is identified using infrared action spectroscopy. HOONO is produced by the recombination of photolytically generated OH and NO(2) radicals, and then cooled in a pulsed supersonic expansion. The second overtone transition is assigned to tp-HOONO based on its vibrational frequency (10 195.3 cm(-1)) and rotational band contour, which are in accord with theoretical predictions and previous observations of the first overtone transition. The transition dipole moment associated with the overtone transition is rotated considerably from the OH bond axis, as evident from its hybrid band composition, indicating substantial charge redistribution upon OH stretch excitation. The overtone band exhibits homogeneous line broadening that is attributed to intramolecular vibrational redistribution, arising from the coupling of the initially excited OH stretch to other modes that ultimately lead to dissociation. The quantum state distributions of the OH X (2)Pi (nu=0) products following first and second OH overtone excitation of tp-HOONO are found to be statistical by comparison with three commonly used statistical models. The product state distributions are principally determined by the tp-HOONO binding energy of 16.2(1) kcal mol(-1). Only a small fraction of the OH products are produced in nu=1 following the second overtone excitation, consistent with statistical predictions

Field effect enhancement in buffered quantum nanowire networks

III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications

MEMS Accelerometers

Micro-electro-mechanical system (MEMS) devices are widely used for inertia, pressure, and ultrasound sensing applications. Research on integrated MEMS technology has undergone extensive development driven by the requirements of a compact footprint, low cost, and increased functionality. Accelerometers are among the most widely used sensors implemented in MEMS technology. MEMS accelerometers are showing a growing presence in almost all industries ranging from automotive to medical. A traditional MEMS accelerometer employs a proof mass suspended to springs, which displaces in response to an external acceleration. A single proof mass can be used for one- or multi-axis sensing. A variety of transduction mechanisms have been used to detect the displacement. They include capacitive, piezoelectric, thermal, tunneling, and optical mechanisms. Capacitive accelerometers are widely used due to their DC measurement interface, thermal stability, reliability, and low cost. However, they are sensitive to electromagnetic field interferences and have poor performance for high-end applications (e.g., precise attitude control for the satellite). Over the past three decades, steady progress has been made in the area of optical accelerometers for high-performance and high-sensitivity applications but several challenges are still to be tackled by researchers and engineers to fully realize opto-mechanical accelerometers, such as chip-scale integration, scaling, low bandwidth, etc

Développement d'architectures HW/SW tolérantes aux fautes et auto-calibrantes pour les technologies Intégrées 3D

Malgré les avantages de l'intégration 3D, le test, le rendement et la fiabilité des Through-Silicon-Vias (TSVs) restent parmi les plus grands défis pour les systèmes 3D à base de Réseaux-sur-Puce (Network-on-Chip - NoC). Dans cette thèse, une stratégie de test hors-ligne a été proposé pour les interconnections TSV des liens inter-die des NoCs 3D. Pour le TSV Interconnect Built-In Self-Test (TSV-IBIST) on propose une nouvelle stratégie pour générer des vecteurs de test qui permet la détection des fautes structuraux (open et short) et paramétriques (fautes de délaye). Des stratégies de correction des fautes transitoires et permanents sur les TSV sont aussi proposées aux plusieurs niveaux d'abstraction: data link et network. Au niveau data link, des techniques qui utilisent des codes de correction (ECC) et retransmission sont utilisées pour protégé les liens verticales. Des codes de correction sont aussi utilisés pour la protection au niveau network. Les défauts de fabrication ou vieillissement des TSVs sont réparé au niveau data link avec des stratégies à base de redondance et sérialisation. Dans le réseau, les liens inter-die défaillante ne sont pas utilisables et un algorithme de routage tolérant aux fautes est proposé. On peut implémenter des techniques de tolérance aux fautes sur plusieurs niveaux. Les résultats ont montré qu'une stratégie multi-level atteint des très hauts niveaux de fiabilité avec un cout plus bas. Malheureusement, il n'y as pas une solution unique et chaque stratégie a ses avantages et limitations. C'est très difficile d'évaluer tôt dans le design flow les couts et l'impact sur la performance. Donc, une méthodologie d'exploration de la résilience aux fautes est proposée pour les NoC 3D mesh.3D technology promises energy-efficient heterogeneous integrated systems, which may open the way to thousands cores chips. Silicon dies containing processing elements are stacked and connected by vertical wires called Through-Silicon-Vias. In 3D chips, interconnecting an increasing number of processing elements requires a scalable high-performance interconnect solution: the 3D Network-on-Chip. Despite the advantages of 3D integration, testing, reliability and yield remain the major challenges for 3D NoC-based systems. In this thesis, the TSV interconnect test issue is addressed by an off-line Interconnect Built-In Self-Test (IBIST) strategy that detects both structural (i.e. opens, shorts) and parametric faults (i.e. delays and delay due to crosstalk). The IBIST circuitry implements a novel algorithm based on the aggressor-victim scenario and alleviates limitations of existing strategies. The proposed Kth-aggressor fault (KAF) model assumes that the aggressors of a victim TSV are neighboring wires within a distance given by the aggressor order K. Using this model, TSV interconnect tests of inter-die 3D NoC links may be performed for different aggressor order, reducing test times and circuitry complexity. In 3D NoCs, TSV permanent and transient faults can be mitigated at different abstraction levels. In this thesis, several error resilience schemes are proposed at data link and network levels. For transient faults, 3D NoC links can be protected using error correction codes (ECC) and retransmission schemes using error detection (Automatic Retransmission Query) and correction codes (i.e. Hybrid error correction and retransmission).For transients along a source-destination path, ECC codes can be implemented at network level (i.e. Network-level Forward Error Correction). Data link solutions also include TSV repair schemes for faults due to fabrication processes (i.e. TSV-Spare-and-Replace and Configurable Serial Links) and aging (i.e. Interconnect Built-In Self-Repair and Adaptive Serialization) defects. At network-level, the faulty inter-die links of 3D mesh NoCs are repaired by implementing a TSV fault-tolerant routing algorithm. Although single-level solutions can achieve the desired yield / reliability targets, error mitigation can be realized by a combination of approaches at several abstraction levels. To this end, multi-level error resilience strategies have been proposed. Experimental results show that there are cases where this multi-layer strategy pays-off both in terms of cost and performance. Unfortunately, one-fits-all solution does not exist, as each strategy has its advantages and limitations. For system designers, it is very difficult to assess early in the design stages the costs and the impact on performance of error resilience. Therefore, an error resilience exploration (ERX) methodology is proposed for 3D NoCs.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Additive Manufacturing as a Means of Gas Sensor Development for Battery Health Monitoring

Lithium-ion batteries (LIBs) still need continuous safety monitoring based on their intrinsic properties, as well as due to the increase in their sizes and device requirements. The main causes of fires and explosions in LIBs are heat leakage and the presence of highly inflammable components. Therefore, it is necessary to improve the safety of the batteries by preventing the generation of these gases and/or their early detection with sensors. The improvement of such safety sensors requires new approaches in their manufacturing. There is a growing role for research of nanostructured sensor’s durability in the field of ionizing radiation that also can induce structural changes in the LIB’s component materials, thus contributing to the elucidation of fundamental physicochemical processes; catalytic reactions or inhibitions of the chemical reactions on which the work of the sensors is based. A current method widely used in various fields, Direct Ink Writing (DIW), has been used to manufacture heterostructures of Al2O3/CuO and CuO:Fe2O3, followed by an additional ALD and thermal annealing step. The detection properties of these 3D-DIW printed heterostructures showed responses to 1,3-dioxolan (DOL), 1,2-dimethoxyethane (DME) vapors, as well as to typically used LIB electrolytes containing LiTFSI and LiNO3 salts in a mixture of DOL:DME, as well also to LiPF6 salts in a mixture of ethylene carbonate (EC) and dimethyl carbonate (DMC) at operating temperatures of 200 °C–350 °C with relatively high responses. The combination of the possibility to detect electrolyte vapors used in LIBs and size control by the 3D-DIW printing method makes these heterostructures extremely attractive in controlling the safety of batteries