Matching Japan in quality : how the leading U.S. semiconductor firms caught up with the best in Japan

Includes bibliographical references.William F. Finan

Microgravity: A Teacher's Guide With Activities in Science, Mathematics, and Technology

The purpose of this curriculum supplement guide is to define and explain microgravity and show how microgravity can help us learn about the phenomena of our world. The front section of the guide is designed to provide teachers of science, mathematics, and technology at many levels with a foundation in microgravity science and applications. It begins with background information for the teacher on what microgravity is and how it is created. This is followed with information on the domains of microgravity science research; biotechnology, combustion science, fluid physics, fundamental physics, materials science, and microgravity research geared toward exploration. The background section concludes with a history of microgravity research and the expectations microgravity scientists have for research on the International Space Station. Finally, the guide concludes with a suggested reading list, NASA educational resources including electronic resources, and an evaluation questionnaire

High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. This is more than an order of magnitude improvement over response times of conventional a-Si (~5 ms) and best reported MoS2 devices (~50 ms). The van-der-waals heterojunction presented here yields a high photoresponsivity of 210 mA/W at green light-the wavelength used in commercial imaging systems. This responsivity is 4X larger than that of the best MoS2 devices, and 2X larger than that of commercial a-Si devices. The 10X improvement in speed with high photoresponsivity provides a potential solution to a decades-long problem for thin film imagers and could find applications in large area electronics such as biomedical imaging and x-ray fluoroscopy

Electro-kinetically enhanced nano-metric material removal

This project is a fundamental proof of concept to look at the feasibility of using field activated abrasive particles to achieve material removal on a substrate. There are a few different goals for this project. The first goal is to prove through visualization that particle movement can be influenced and controlled by changes in electric field. The second goal is to fundamentally prove that particles controlled by electric field can remove material from a substrate. Third, it should be shown that changes in electric field can control the amount of material being removed in a given amount of time. A mathematical model will be presented which predicts metallic material removal rates based on changes in electric field strength. In this project, a technique combining concepts from electrokinetics, electrochemical mechanical planarization, and contact mechanics is proposed, aiming at enhancing planarization performance. By introducing an AC electric field with a DC offset, we try to achieve not only a better control of metallic material removal but also more flexible manipulation of the dynamic behaviour of abrasive particles. The presence of electric field will lead to electrokinetic phenomena including electroosmotic flow of an electrolyte solution and electrophoretic motion of abrasive particles. As a result, we aim to improve both the mechanical performance of planarization that is largely determined by the polishing parameters (e.g. down pressure, rotation speed, pads, and types of abrasives) and the chemical performance of planarization that is governed by selective and collective reactions of different chemical ingrediants of the slurry with the sample surface. The aim is also to understand and improve the interactions of abrasive particles with the sample.M.S.Committee Chair: Danyluk, Steven; Committee Member: Butler, David; Committee Member: Hesketh, Peter; Committee Member: Yoda, Minam

Power Semiconductors for An Energy-Wise Society

This IEC White Paper establishes the critical role that power semiconductors play in transitioning to an energy wise society. It takes an in-depth look at expected trends and opportunities, as well as the challenges surrounding the power semiconductors industry. Among the significant challenges mentioned is the need for change in industry practices when transitioning from linear to circular economies and the shortage of skilled personnel required for power semiconductor development. The white paper also stresses the need for strategic actions at the policy-making level to address these concerns and calls for stronger government commitment, policies and funding to advance power semiconductor technologies and integration. It further highlights the pivotal role of standards in removing technical risks, increasing product quality and enabling faster market acceptance. Besides noting benefits of existing standards in accelerating market growth, the paper also identifies the current standardization gaps. The white paper emphasizes the importance of ensuring a robust supply chain for power semiconductors to prevent supply-chain disruptions like those seen during the COVID-19 pandemic, which can have widespread economic impacts.The white paper highlights the importance of inspiring young professionals to take an interest in power semiconductors and power electronics, highlighting the potential to make a positive impact on the world through these technologies.The white paper concludes with recommendations for policymakers, regulators, industry and other IEC stakeholders for collaborative structures and accelerating the development and adoption of standards

Yield and Reliability Analysis for Nanoelectronics

As technology has continued to advance and more break-through emerge, semiconductor devices with dimensions in nanometers have entered into all spheres of our lives. Accordingly, high reliability and high yield are very much a central concern to guarantee the advancement and utilization of nanoelectronic products. However, there appear to be some major challenges related to nanoelectronics in regard to the field of reliability: identification of the failure mechanisms, enhancement of the low yields of nano products, and management of the scarcity and secrecy of available data [34]. Therefore, this dissertation investigates four issues related to the yield and reliability of nanoelectronics. Yield and reliability of nanoelectronics are affected by defects generated in the manufacturing processes. An automatic method using model-based clustering has been developed to detect the defect clusters and identify their patterns where the distribution of the clustered defects is modeled by a new mixture distribution of multivariate normal distributions and principal curves. The new mixture model is capable of modeling defect clusters with amorphous, curvilinear, and linear patterns. We evaluate the proposed method using both simulated and experimental data and promising results have been obtained. Yield is one of the most important performance indexes for measuring the success of nano fabrication and manufacturing. Accurate yield estimation and prediction is essential for evaluating productivity and estimating production cost. This research studies advanced yield modeling approaches which consider the spatial variations of defects or defect counts. Results from real wafer map data show that the new yield models provide significant improvement in yield estimation compared to the traditional Poisson model and negative binomial model. The ultra-thin SiO2 is a major factor limiting the scaling of semiconductor devices. High-k gate dielectric materials such as HfO2 will replace SiO2 in future generations of MOS devices. This study investigates the two-step breakdown mechanisms and breakdown sequences of double-layered high-k gate stacks by monitoring the relaxation of the dielectric films. The hazard rate is a widely used metric for measuring the reliability of electronic products. This dissertation studies the hazard rate function of gate dielectrics breakdown. A physically feasible failure time distribution is used to model the time-to-breakdown data and a Bayesian approach is adopted in the statistical analysis

Testing for delay defects utilizing test data compression techniques

textAs technology shrinks new types of defects are being discovered and new fault models are being created for those defects. Transition delay and path delay fault models are two such models that have been created, but they still fall short in that they are unable to obtain a high test coverage of smaller delay defects; these defects can cause functional behavior to fail and also indicate potential reliability issues. The first part of this dissertation addresses these problems by presenting an enhanced timing-based delay fault testing technique that incorporates the use of standard delay ATPG, along with timing information gathered from standard static timing analysis. Utilizing delay fault patterns typically increases the test data volume by 3-5X when compared to stuck-at patterns. Combined with the increase in test data volume associated with the increase in gate count that typically accompanies the miniaturization of technology, this adds up to a very large increase in test data volume that directly affect test time and thus the manufacturing cost. The second part of this dissertation presents a technique for improving test compression and reducing test data volume by using multiple expansion ratios while determining the configuration of the scan chains for each of the expansion ratios using a dependency analysis procedure that accounts for structural dependencies as well as free variable dependencies to improve the probability of detecting faults. Finally, this dissertation addresses the problem of unknown values (X’s) in the output response data corrupting the data and degrading the performance of the output response compactor and thus the overall amount of test compression. Four techniques are presented that focus on handling response data with large percentages of X’s. The first uses X-canceling MISR architecture that is based on deterministically observing scan cells, and the second is a hybrid approach that combines a simple X-masking scheme with the X-canceling MISR for further gains in test compression. The third and fourth techniques revolve around reiterative LFSR X-masking, which take advantage of LFSR-encoded masks that can be reused for multiple scan slices in novel ways.Electrical and Computer Engineerin