7 research outputs found

    Electrical overstress and electrostatic discharge failure in silicon MOS devices

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    This thesis presents an experimental and theoretical investigation of electrical failure in MOS structures, with a particular emphasis on short-pulse and ESD failure. It begins with an extensive survey of MOS technology, its failure mechanisms and protection schemes. A program of experimental research on MOS breakdown is then reported, the results of which are used to develop a model of breakdown across a wide spectrum of time scales. This model, in which bulk-oxide electron trapping/emission plays a major role, prohibits the direct use of causal theory over short time-scales, invalidating earlier theories on the subject. The work is extended to ESD stress of both polarities. Negative polarity ESD breakdownis found to be primarily oxide-voltage activated, with no significant dependence on temperature of luminosity. Positive polarity breakdown depends on the rate of surface inversion, dictated by the Si avalanche threshold and/or the generation speed of light-induced carriers. An analytical model, based upon the above theory is developed to predict ESD breakdown over a wide range of conditions. The thesis ends with an experimental and theoretical investigation of the effects of ESD breakdown on device and circuit performance. Breakdown sites are modelled as resistive paths in the oxide, and their distorting effects upon transistor performance are studied. The degradation of a damaged transistor under working stress is observed, giving a deeper insight into the latent hazards of ESD damage

    Impacts of Cmos Scaling on the Analog Design

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    The advancement of the CMOS fabrication process has pushed the CMOS transistor scaling to the sub-100nm node. While process fabrication and logic designers advocated CMOS scaling consistent with Moore's Law, circuit engineers are struggling with the high leakage current, low power supply, and high power consumption. For the analog circuit designer, things become even worse due to the loss in dynamic range.The objective of this research was to investigate the impacts of the CMOS scaling on the analog design and proposed analog scaling rule: the overdrive voltage should scale at the same rate or faster than the supply voltage to maintain a power settling product efficiency which is constant or improving. To avoid a power consumption penalty, the final specifications for the analog power supply will stall at a voltage of near 1.1V, with an overdrive voltage of 0.1V. Device thresholds must be limited to an approximate voltage 0.3V for analog designs. Due to the reducing self-gain of the transistor from the scaling, multistage OTA topologies should be adopted to achieve high gain and high bandwidth. Different OTA topologies were analyzed in close loop form and compared based on a power settling product efficiency criteria. The nested gain boosted cascode OTA topology was found to have the best efficiency under high supply voltage, high overdrive voltage or low supply voltage, low overdrive voltage. Finally, a 2V 20Msample/s 11-bit pipelined ADC was designed as an example to demonstrate the benefits of the nested cascode OTA application to low voltage pipelined ADC design. The size of the ADC stages was optimally scaled to achieve low power consumption. The full ADC was simulated on the behavior model level by using Matlab Simulink. Cadence simulations and the Peregrine 0.5um SOS device models were used to verify critical components of the ADC further demonstrating feasibility.Electrical Engineering Technolog

    A study of silicon and germanium junctionless transistors

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    Technology boosters, such as strain, HKMG and FinFET, have been introduced into semiconductor industry to extend Moore’s law beyond 130 nm technology nodes. New device structures and channel materials are highly demanded to keep performance enhancement when the device scales beyond 22 nm. In this work, the properties and feasibility of the proposed Junctionless transistor (JNT) have been evaluated for both Silicon and Germanium channels. The performance of Silicon JNTs with 22 nm gate length have been characterized at elevated temperature and stressed conditions. Furthermore, steep Subthreshold Slopes (SS) in JNT and IM devices are compared. It is observed that the floating body in JNT is relatively dynamic comparing with that in IM devices and proper design of the device structure may further reduce the VD for a sub- 60 mV/dec subthreshold slope. Diode configuration of the JNT has also been evaluated, which demonstrates the first diode without junctions. In order to extend JNT structure into the high mobility material Germanium (Ge), a full process has been develop for Ge JNT. Germanium-on-Insulator (GeOI) wafers were fabricated using Smart-Cut with low temperature direct wafer bonding method. Regarding the lithography and pattern transfer, a top-down process of sub-50-nm width Ge nanowires is developed in this chapter and Ge nanowires with 35 nm width and 50 nm depth are obtained. The oxidation behaviour of Ge by RTO has been investigated and high-k passivation scheme using thermally grown GeO2 has been developed. With all developed modules, JNT with Ge channels have been fabricated by the CMOScompatible top-down process. The transistors exhibit the lowest subthreshold slope to date for Ge JNT. The devices with a gate length of 3 μm exhibit a SS of 216 mV/dec with an ION/IOFF current ratio of 1.2×103 at VD = -1 V and DIBL of 87 mV/V

    Simulation of multigate SOI transistors with silicon, germanium and III-V channels

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    In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach

    Solid State Circuits Technologies

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    The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

    Solid-state imaging : a critique of the CMOS sensor

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    Gold free ohmic contacts for III-V MOSFET devices

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    Over the past forty years the development of CMOS has been able to follow Moore’s law using planar silicon technology. However, this technology is reaching its limits as the density of transistors has a significant impact on the power dissipation in an integrated circuit. Alternative channel materials and device architectures will then be required in the future to reduce the power consumption of transistors. The development of CMOS technology with high mobility channel materials, specifically Ge for pMOS and III-V materials for nMOS, was the aim of the European Union FP7 funded Duallogic consortium, of which this project was part. The experimental work at the University of Glasgow was the III-V compound semiconductor MOSFET, in particular the study of Si processing compatible source/drain contacts to III-V MOSFET devices with InxGa1-xAs channel materials, which was an important aspect of this thesis. Another area investigated in this thesis is the impact of current crowding effects on source/drain contact resistance by aggressive scaling of devices. During this thesis, optimisation of a PdGe-based ohmic contact to buried channel device material with a In0.75GaAs channel led to a contact resistance of 0.15Ohm.mm compared to 1Ohm.mm in previous work by R. Hill. The PdGe-based contact also proved to be scalable in both vertical and lateral dimensions. This scaled structure was then integrated in a surface channel MOSFET device with 1μm access regions and gate lengths varying from 100nm to 20μm. The performance of the devices with 20μm gate lengths was then compared to devices with a NiGeAu based ohmic contact. An increase in RC, 1.82Ohm.mm vs. 0.94Ohm.mm, and Ron, 11.1Ohm.mm vs. 8.55Ohm.mm, was observed in the PdGe-based contact, which resulted in a decrease in gm, 92.3mS/mm vs. 103mS/mm, and Id,sat, 103mA/mm vs. 122mA/mm. However, further optimisation of the PdGe-based ohmic contact showed promising results with a contact resistance of 0.45Ohm.mm. The novel test structure is the first test structure, which makes direct contact to III-V material, with critical dimensions below the transfer length. This structure is able to experimentally observe the current crowding effects and allows for the extraction of the sheet resistance underneath the contact and a more accurate extraction of the specific contact resistivity. This offers a significant insight into the impact of the sheet resistance underneath the contact and the role it plays
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