End-of-Life and Constant Rate Reliability Modeling for Semiconductor Packages Using Knowledge-Based Test Approaches

End-of-life and constant rate reliability modeling for semiconductor packages are the focuses of this dissertation. Knowledge-based testing approaches are applied and the test-to-failure approach is approved to be a reliable approach. First of all, the end-of-life AF models for solder joint reliability are studied. The research results show using one universal AF model for all packages is flawed approach. An assessment matrix is generated to guide the application of AF models. The AF models chosen should be either assessed based on available data or validated through accelerated stress tests. A common model can be applied if the packages have similar structures and materials. The studies show that different AF models will be required for SnPb solder joints and SAC lead-free solder joints. Second, solder bumps under power cycling conditions are found to follow constant rate reliability models due to variations of the operating conditions. Case studies demonstrate that a constant rate reliability model is appropriate to describe non solder joint related semiconductor package failures as well. Third, the dissertation describes the rate models using Chi-square approach cannot correlate well with the expected failure mechanisms in field applications. The estimation of the upper bound using a Chi-square value from zero failure is flawed. The dissertation emphasizes that the failure data is required for the failure rate estimation. A simple but tighter approach is proposed and provides much tighter bounds in comparison of other approaches available. Last, the reliability of solder bumps in flip chip packages under power cycling conditions is studied. The bump materials and underfill materials will significantly influence the reliability of the solder bumps. A set of comparable bump materials and the underfill materials will dramatically improve the end-of-life solder bumps under power cycling loads, and bump materials are one of the most significant factors. Comparing to the field failure data obtained, the end-of-life model does not predict the failures in the field, which is more close to an approximately constant failure rate. In addition, the studies find an improper underfill material could change the failure location from solder bump cracking to ILD cracking or BGA solder joint failures

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Semiconductor Packaging

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. By tying together the disparate elements essential to a semiconductor package, the authors show how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world. The text also covers packaging materials for MEMS, solar technology, and LEDs and explores future trends in semiconductor packages

Bed of nails(B0N) - 100 microns pitch wafer level off-chip interconnects for microelectronic packaging applications

Master'sMASTER OF ENGINEERIN

Mechanics of Non Planar Interfaces in Flip-Chip Interconnects

With the continued proliferation of low cost, portable consumer electronic products with greater functionality, there is increasing demand for electronic packaging that is smaller, lighter and less expensive. Flip chip is an essential enabling technology for these products. The electrical connection between the chip I/O and substrate is achieved using conductive materials, such as solder, conductive epoxy, metallurgy bump (e.g., gold) and anisotropic conductive adhesives. The interconnect regions of flip-chip packages consists of highly dissimilar materials to meet their functional requirements. The mismatches in properties, contact morphology and crystal orientation at those material interfaces make them vulnerable to failure through delamination and crack growth under various loading patterns. This study encompasses contact between deformable bodies, bonding at the asperities and fracture properties at interfaces formed by the interconnects of flip-chip packages. This is achieved through experimentation and modeling at different length scales, to be able to capture the detailed microstructural features and contact mechanics at interfaces typically found in electronic systems

Copper to copper bonding by nano interfaces for fine pitch interconnections and thermal applications

Ever growing demands for portability and functionality have always governed the electronic technology innovations. IC downscaling with Moore s law at IC level and system miniaturization with System-On-Package (SOP) paradigm at system level, have resulted and will continue to result in ultraminiaturized systems with unprecedented functionality at reduced cost. However, system miniaturization poses several electrical and thermal challenges that demand innovative solutions including advanced materials, bonding and assembly techniques. Heterogeneous material and device integration for thermal structures and IC assembly are limited by the bonding technology and the electrical and thermal impedance of the bonding interfaces. Solder - based bonding technology that is prevalent today is a major limitation to future systems. The trend towards miniaturized systems is expected to drive downscaling of IC I/O pad pitches from 40µm to 1- 5µm in future. Solder technology imposes several pitch, processability and cost restrictions at such fine pitches. Furthermore, according to International Technology Roadmap for Semiconductors (ITRS-2006), the supply current in high performance microprocessors is expected to increase to 220 A by 2012. At such supply current, the current density will exceed the maximum allowable current density of solders. The intrinsic delay and electromigration in solders are other daunting issues that become critical at nanometer sized technology nodes. In addition, formation of intermetallics is also a bottleneck that poses significant mechanical issues. Similarly, thermal power dissipation is growing to unprecedented high with a projected power of 198 W by 2008 (ITRS 2006). Present thermal interfaces are not adequate for such high heat dissipation. Recently, copper based thin film bonding has become a promising approach to address the abovementioned challenges. However, copper-copper direct bonding without using solders has not been studied thoroughly. Typically, bonding is carried out at 400oC for 30 min followed by annealing for 30 min. High thermal budget in such process makes it less attractive for integrated systems because of the associated process incompatibilities. Hence, there is a need to develop a novel low temperature copper to copper bonding process. In the present study, nanomaterials - based copper-to-copper bonding is explored and developed as an alternative to solder-based bonding. To demonstrate fine pitch bonding, the patterning of these nanoparticles is crucial. Therefore, two novel self-patterning techniques based on: 1.) Selective wetting and 2.) Selective nanoparticle deposition, are developed to address this challenge. Nanoparticle active layer facilitates diffusion and, thus, a reliable bond can be achieved using less thermal budget. Quantitative characterization of the bonding revealed good metallurgical bonding with very high bond strength. This has been confirmed by several morphological and structural characterizations. A 30-micron pitch IC assembly test vehicle is used to demonstrate fine pitch patternability and bonding. In conclusion, novel nanoparticle synthesis and patterning techniques were developed and demonstrated for low-impedance and low-cost electrical and thermal interfaces.M.S.Committee Chair: Rao R. Tummala; Committee Member: C. P. Wong; Committee Member: P. M. Ra

Development of convective reflow-projection moire warpage measurement system and prediction of solder bump reliability on board assemblies affected by warpage

Out-of-plane displacement (warpage) is one of the major thermomechanical reliability concerns for board-level electronic packaging. Printed wiring board (PWB) and component warpage results from CTE mismatch among the materials that make up the PWB assembly (PWBA). Warpage occurring during surface-mount assembly reflow processes and normal operations may cause serious reliability problems. In this research, a convective reflow and projection moire warpage measurement system was developed. The system is the first real-time, non-contact, and full-field measurement system capable of measuring PWB/PWBA/chip package warpage with the projection moire technique during different thermal reflow processes. In order to accurately simulate the reflow process and to achieve the ideal heating rate, a convective heating system was designed and integrated with the projection moire system. An advanced feedback controller was implemented to obtain the optimum heating responses. The developed system has the advantages of simulating different types of reflow processes, and reducing the temperature gradients through the PWBA thickness to ensure that the projection moire system can provide more accurate measurements. Automatic package detection and segmentation algorithms were developed for the projection moire system. The algorithms are used for automatic segmentation of the PWB and assembled packages so that the warpage of the PWB and chip packages can be determined individually. The effect of initial PWB warpage on the fatigue reliability of solder bumps on board assemblies was investigated using finite element modeling (FEM) and the projection moire system. The 3-D models of PWBAs with varying board warpage were used to estimate the solder bump fatigue life for different chip packages mounted on PWBs. The simulation results were validated and correlated with the experimental results obtained using the projection moire system and accelerated thermal cycling tests. Design of experiments and an advanced prediction model were generated to predict solder bump fatigue life based on the initial PWB warpage, package dimensions and locations, and solder bump materials. This study led to a better understanding of the correlation between PWB warpage and solder bump thermomechanical reliability on board assemblies.Ph.D.Committee Chair: Dr. Ume, I. Charles; Committee Member: Dr. Book, Wayne; Committee Member: Dr. Kim, Yeong; Committee Member: Dr. Pan, Jiahui; Committee Member: Dr. Sitaraman, Suresh; Committee Member: Dr. Wu, C. F. Jef

Semiconductor Packaging

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. By tying together the disparate elements essential to a semiconductor package, the authors show how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world. The text also covers packaging materials for MEMS, solar technology, and LEDs and explores future trends in semiconductor packages