CONCEPTUAL DESIGN REPORT

Brookhaven National Laboratory has prepared a conceptual design for a world class user facility for scientific research using synchrotron radiation. This facility, called the ''National Synchrotron Light Source II'' (NSLS-II), will provide ultra high brightness and flux and exceptional beam stability. It will also provide advanced insertion devices, optics, detectors, and robotics, and a suite of scientific instruments designed to maximize the scientific output of the facility. Together these will enable the study of material properties and functions with a spatial resolution of {approx}1 nm, an energy resolution of {approx}0.1 meV, and the ultra high sensitivity required to perform spectroscopy on a single atom. The overall objective of the NSLS-II project is to deliver a research facility to advance fundamental science and have the capability to characterize and understand physical properties at the nanoscale, the processes by which nanomaterials can be manipulated and assembled into more complex hierarchical structures, and the new phenomena resulting from such assemblages. It will also be a user facility made available to researchers engaged in a broad spectrum of disciplines from universities, industries, and other laboratories

High-k YCTO thin films for electronics

The high permittivity values reported in rare-earth transition metal oxides ceramics makes them very interesting as alternative gate dielectrics. Here, we summarize our recent results on the yttrium copper titanate (YCTO) thin films under different deposition conditions. Their dielectric properties were studied both in metal-oxide-metal (MIM) and in metal-oxide-semiconductor (MOS) junctions for respectively investigating the material response without parasitic substrate contributions and evaluating the YCTO performance as gate oxide. A strongly dependence of the permittivity from deposition conditions was observed, with a variation from 100 down to 24 at 100 kHz. Such behavior was ascribed to film microstructure variations. Notably, at certain deposition conditions, YCTO thin films possess a higher dielectric permittivity than their bulk counterpart (40.3) in addition to good performances in term of losses. These results demonstrate the applicability of YCTO as alternative high-k gate oxides