4,389 research outputs found
Antenna-coupled TES bolometers used in BICEP2, Keck array, and SPIDER
We have developed antenna-coupled transition-edge sensor (TES) bolometers for
a wide range of cosmic microwave background (CMB) polarimetry experiments,
including BICEP2, Keck Array, and the balloon borne SPIDER. These detectors
have reached maturity and this paper reports on their design principles,
overall performance, and key challenges associated with design and production.
Our detector arrays repeatedly produce spectral bands with 20%-30% bandwidth at
95, 150, or 220~GHz. The integrated antenna arrays synthesize symmetric
co-aligned beams with controlled side-lobe levels. Cross-polarized response on
boresight is typically ~0.5%, consistent with cross-talk in our multiplexed
readout system. End-to-end optical efficiencies in our cameras are routinely
35% or higher, with per detector sensitivities of NET~300 uKrts. Thanks to the
scalability of this design, we have deployed 2560 detectors as 1280 matched
pairs in Keck Array with a combined instantaneous sensitivity of ~9 uKrts, as
measured directly from CMB maps in the 2013 season. Similar arrays have
recently flown in the SPIDER instrument, and development of this technology is
ongoing.Comment: 16 pgs, 20 fig
Nonlinear mechanisms in passive microwave devices
Premi extraordinari doctorat curs 2010-2011, à mbit d’Enginyeria de les TICThe telecommunications industry follows a tendency towards smaller devices, higher power and higher frequency, which imply an increase on the complexity of the electronics involved. Moreover, there is a need for extended capabilities like frequency tunable devices, ultra-low losses or high power handling, which make use of advanced materials for these purposes. In addition, increasingly demanding communication standards and regulations push the limits of the acceptable performance degrading indicators. This is the case of nonlinearities, whose effects, like increased Adjacent Channel Power Ratio (ACPR), harmonics, or intermodulation distortion among others, are being included in the performance requirements, as maximum tolerable levels.
In this context, proper modeling of the devices at the design stage is of crucial importance in predicting not only the device performance but also the global system indicators and to make sure that the requirements are fulfilled. In accordance with that, this work proposes the necessary steps for circuit models implementation of different passive microwave devices, from the linear and nonlinear measurements to the simulations to validate them. Bulk acoustic wave resonators and transmission lines made of high temperature superconductors, ferroelectrics or regular metals and dielectrics are the subject of this work. Both phenomenological and physical approaches are considered and circuit models are proposed and compared with measurements. The nonlinear observables, being harmonics, intermodulation distortion, and saturation or detuning, are properly related to the material properties that originate them. The obtained models can be used in circuit simulators to predict the performance of these microwave devices under complex modulated signals, or even be used to predict their performance when integrated into more complex systems. A key step to achieve this goal is an accurate characterization of materials and devices, which is faced by making use of advanced measurement techniques. Therefore, considerations on special measurement setups are being made along this thesis.Award-winningPostprint (published version
Low-noise 0.8-0.96- and 0.96-1.12-THz superconductor-insulator-superconductor mixers for the Herschel Space Observatory
Heterodyne mixers incorporating Nb SIS junctions and NbTiN-SiO/sub 2/-Al microstrip tuning circuits offer the lowest reported receiver noise temperatures to date in the 0.8-0.96- and 0.96-1.12-THz frequency bands. In particular, improvements in the quality of the NbTiN ground plane of the SIS devices' on-chip microstrip tuning circuits have yielded significant improvements in the sensitivity of the 0.96-1.12-THz mixers relative to previously presented results. Additionally, an optimized RF design incorporating a reduced-height waveguide and suspended stripline RF choke filter offers significantly larger operating bandwidths than were obtained with mixers that incorporated full-height waveguides near 1 THz. Finally, the impact of junction current density and quality on the performance of the 0.8-0.96-THz mixers is discussed and compared with measured mixer sensitivities, as are the relative sensitivities of the 0.8-0.96- and 0.96-1.12-THz mixers
The Quantum Socket: Three-Dimensional Wiring for Extensible Quantum Computing
Quantum computing architectures are on the verge of scalability, a key
requirement for the implementation of a universal quantum computer. The next
stage in this quest is the realization of quantum error correction codes, which
will mitigate the impact of faulty quantum information on a quantum computer.
Architectures with ten or more quantum bits (qubits) have been realized using
trapped ions and superconducting circuits. While these implementations are
potentially scalable, true scalability will require systems engineering to
combine quantum and classical hardware. One technology demanding imminent
efforts is the realization of a suitable wiring method for the control and
measurement of a large number of qubits. In this work, we introduce an
interconnect solution for solid-state qubits: The quantum socket. The quantum
socket fully exploits the third dimension to connect classical electronics to
qubits with higher density and better performance than two-dimensional methods
based on wire bonding. The quantum socket is based on spring-mounted micro
wires the three-dimensional wires that push directly on a micro-fabricated
chip, making electrical contact. A small wire cross section (~1 mmm), nearly
non-magnetic components, and functionality at low temperatures make the quantum
socket ideal to operate solid-state qubits. The wires have a coaxial geometry
and operate over a frequency range from DC to 8 GHz, with a contact resistance
of ~150 mohm, an impedance mismatch of ~10 ohm, and minimal crosstalk. As a
proof of principle, we fabricated and used a quantum socket to measure
superconducting resonators at a temperature of ~10 mK.Comment: Main: 31 pages, 19 figs., 8 tables, 8 apps.; suppl.: 4 pages, 5 figs.
(HiRes figs. and movies on request). Submitte
Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines
In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization
Tunable microwave filters using ferroelectric thin films
Frequency agile microwave devices based on Barium Strontium Titanate (BST) thin films have gained a lot of interest in recent years. The frequency agility of the ferroelectric devices is based on the external DC electric field controlled permittivity of BST thin film. In this research work, several tunable microwave filters incorporating BST thin film varactors operating in a frequency range between 1 GHz and 25 GHz are designed, tested and analysed. A lumped element lowpass filter incorporating integrated meander line inductors and BST parallel plate capacitors is implemented on a high resistivity silicon substrate and demonstrates 32.1 % tuning of the cut-off frequency at 15 V. A combline bandpass filter employing integrated BST parallel plate varactors as tuning elements is implemented on a MgO substrate and shows a reasonable tuning from about 8 GHz to 12 GHz with 10 V bias of only one resonator. Two pole and four pole coupled resonator bandpass filters with discrete BST or GaAs varactors as tuning elements are implemented in a frequency range of 1 - 3 GHz. The filters based on BST parallel plate capacitors show an insertion loss in line with the GaAs filters, which is also the lowest insertion loss of BST filters ever reported. Future work on improving the BST film and metal film loss at tens of gigahertz range is also discussed
Reconfigurable Reflectarrays and Array Lenses for Dynamic Antenna Beam Control: A Review
Advances in reflectarrays and array lenses with electronic beam-forming
capabilities are enabling a host of new possibilities for these
high-performance, low-cost antenna architectures. This paper reviews enabling
technologies and topologies of reconfigurable reflectarray and array lens
designs, and surveys a range of experimental implementations and achievements
that have been made in this area in recent years. The paper describes the
fundamental design approaches employed in realizing reconfigurable designs, and
explores advanced capabilities of these nascent architectures, such as
multi-band operation, polarization manipulation, frequency agility, and
amplification. Finally, the paper concludes by discussing future challenges and
possibilities for these antennas.Comment: 16 pages, 12 figure
Electromagnetic Interference and Compatibility
Recent progress in the fields of Electrical and Electronic Engineering has created new application scenarios and new Electromagnetic Compatibility (EMC) challenges, along with novel tools and methodologies to address them. This volume, which collects the contributions published in the “Electromagnetic Interference and Compatibility” Special Issue of MDPI Electronics, provides a vivid picture of current research trends and new developments in the rapidly evolving, broad area of EMC, including contributions on EMC issues in digital communications, power electronics, and analog integrated circuits and sensors, along with signal and power integrity and electromagnetic interference (EMI) suppression properties of materials
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