DESIGN OF A GAAS DISTRIBUTED AMPLIFIER WITH LC TRAPS BASED BROADBAND LINEARIZATION

Increasing the linearity of power amplifiers has been an important area of research because its signal integrity influences the performance of the entire transreceiver system and there are strict regulatory requirements on them. Due to the nonlinear behaviour of power amplifiers, third order intermodulation products are generated close to the desired signals and cannot be removed by filters. Increasing linearity will help bring these distortion products closer to the noise floor. However, it is not an easy task to increase linearity without trading off output power. To maintain the same level of output power generated but with higher linearity, many techniques, each with its own pros and cons, have been implemented to linearize an amplifier. Techniques involving feedback are seriously limited in terms of modulation bandwidth whereas methods such as predistortion and feedforward are very difficult to implement. This project seeks to use a simple method of placing terminations directly to the distributed amplifier (DA), making it a device level linearization technique and can be used in addition to the other system level techniques mentioned earlier. To increase linearity over a broad bandwidth of 0.5 to 3.0 GHz, this work proposes using low impedance terminations (LC traps) at the envelope frequency to the input and output of several distributed amplifiers. This research is novel since this is the first time broadband improvement in linearity has been demonstrated using the LC trap method. Two design iterations were completed (first design iteration has four variants to test the output trap while the second design iteration has three variants to test the input trap). The low impedance terminations are implemented using inductor-capacitor networks that are external to the monolithic microwave integrated circuit (MMIC). Design and layout of the DAs were carried out using Agilent’s Advanced Design System (ADS). Results show that placing the traps at the output of the DA does not truly affect the linearity of the device at lower frequencies but provide an improvement of 1.6 dB and 3.4 dB to the third-order output intercept point (OIP3) at 2.5 GHz and 3.0 GHz, respectively. With traps at the input, measurement results at -5 dBm input power, viii 1.375 V base bias (61 mA total collector current) and 10 MHz two tone spacing show a broadband improvement throughout the band (0.5 GHz to 3.0 GHz) of 3.3 dB to 7.4 dB in OIP3. Furthermore, the OIP3 is increased to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB and without causing any stability problems

High efficiency power amplifiers for modern mobile communications: The load-modulation approach

Modern mobile communication signals require power amplifiers able to maintain very high efficiency in a wide range of output power levels, which is a major issue for classical power amplifier architectures. Following the load-modulation approach, efficiency enhancement is achieved by dynamically changing the amplifier load impedance as a function of the input power. In this paper, a review of the widely-adopted Doherty power amplifier and of the other load-modulation efficiency enhancement techniques is presented. The main theoretical aspects behind each method are introduced, and the most relevant practical implementations available in recent literature are reported and discussed

Adaptive Power Amplifiers for Modern Communication Systems with Diverse Operating Conditions

In this thesis, novel designs for adaptive power amplifiers, capable of maintaining excellent performance at dissimilar signal parameters, are presented. These designs result in electronically reconfigurable, single-ended and Doherty power amplifiers (DPA) that efficiently sustain functionality at different driving signal levels, highly varying time domain characteristics and wide-spread frequency bands. The foregoing three contexts represent those dictated by the diverse standards of modern communication systems. Firstly, two prototypes for a harmonically-tuned reconfigurable matching network using discrete radio frequency (RF) microelectromechanical systems (MEMS) switches and semiconductor varactors will be introduced. Following that is an explanation of how the varactor-based matching network was used to develop a high performance reconfigurable Class F-1 power amplifier. Afterwards, a systematic design procedure for realizing an electronically reconfigurable DPA capable of operating at arbitrary centre frequencies, average power levels and back-off efficiency enhancement power ranges is presented. Complete sets of closed-form equations are outlined which were used to build tunable matching networks that compensate for the deviation of the Doherty distributed elements under the desired deployment scenarios. Off-the-shelf RF MEMS switches are used to realize the reconfigurability of the adaptive Doherty amplifiers. Finally, based on the derived closed-form equations, a tri-band, monolithically integrated DPA was realized using the Canadian Photonics Fabrication Centre (CPFC®) GaN500 monolithic microwave integrated circuit (MMIC) process. Successful integration of high power, high performance RF MEMS switches within the MMIC process paved the way for the realization of the frequency-agile, integrated version of the adaptive Doherty amplifier

4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching

A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0GHz, respectively, with a saturated output power of 38dBm, for each switched condition

L-Band Solid State Power Amplifier for space applications

This thesis was carried out in the electrical engineering department at the Communications Division of the company SENER Aeroespacial. Due to the increasing demand of GaN Solid State Power Amplifiers (SSPA) for space applications, an internal R+D project was promoted by the company to overcome the key challanges to implement GaN technology in space-qualified power amplifiers by combining the SENER Aeroespacial multi-disciplinary expertise including, RF design, mechanical-thermal design, manufacturing and quality. Among all the cited disciplines, this thesis is focused particularly on the part corresponding to the SSPA RF design and characterization. Complete product design and development is proposed from a GaN power MMIC transistor in die format to the manufacturing of the representative prototypes. Test validation of the prototypes is performed in the Clean Room using RF instruments, then, based on the initial results, correlation of the measurement and simulation is performed to correct and validate the simulation models considered initially

Millimeter-Wave Active Array Antennas Integrating Power Amplifier MMICs through Contactless Interconnects

Next-generation mobile wireless technologies demand higher data capacity than the modern sub-6 GHz technologies can provide. With abundantly available bandwidth, millimeter waves (e.g., Ka/K bands) can offer data rates of around 10 Gbit/s; however, this shift to higher frequency bands also leads to at least 20 dB more free-space path loss. Active integrated antennas have drawn much attention to compensate for this increased power loss with high-power, energy- efficient, highly integrated array transmitters. Traditionally, amplifiers and antennas are designed separately and interconnected with 50 Ohm intermediate impedance matching networks. The design process typically de-emphasizes the correlation between antenna mutual coupling effects and amplifier nonlinearity, rendering high power consumption and poor linearity. This research aims to overcome the technical challenges of millimeter-wave active integrated array antennas on delivering high power (15–25 dBm) and high energy efficiency (≥25%) with above 10% bandwidth. A co-design methodology was proposed to maximize the output power, power efficiency, bandwidth, and linearity with defined optimal interface impedances. Contrary to conventional approaches, this methodology accounts for the correlation between mutual coupling effects and nonlinearity. A metallic cavity-backed bowtie slot antenna, with sufficient degrees of freedom in synthesizing a non 50 Ohm complex-valued optimal impedance, was adopted for high radiation efficiency and enhanced bandwidth. To overcome interconnection’s bandwidth and power loss limitations, an on-chip E-plane probe contactless transition be- tween the antenna and amplifier was proposed. An array of such antennas be- comes connected bowtie slots, allowing for wideband and wide-scan array performance. An infinite array active integrated unit cell approach was introduced for large-scale (aperture area ≈100 λ2) active array designs. The proposed co-design flow is applied in designing a Ka-band wideband, wide scan angle (\ub155\ub0/\ub140\ub0) active array antenna, consisting of the connected bowtie slot radiator fed through the on-chip probe integrated onto the output of a class AB GaAs pHEMT MMIC PA. The infinite array performance of such elements is experimentally verified, presenting a 11.3% bandwidth with a peak 40% power efficiency, 28 dBm EIRP, and 22 dBm saturated power

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a research foundry, while thesecond and the third are a 7 GHz Doherty and a 7–15 GHz dual-band combined poweramplifiers, both based on a commercial foundry process. The employed architectures, themain design steps and the pros and cons of using gallium nitride technology are highlighted.The measured performance demonstrates the potentialities of the employed technology, andthe progress in the accuracy, reliability and performance of the process