536 research outputs found

    Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying

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    Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. In our proof-of-concept experiments, we demonstrate generation and transmission of OOK signals with line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a {\pi}-voltage of only 0.9 V. This experiment represents not only the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also leads to the lowest drive voltage and energy consumption ever demonstrated at this data rate for a semiconductor-based device. We support our experimental results by a theoretical analysis and show that the nonlinear transfer characteristic of the MZM can be exploited to overcome bandwidth limitations of the modulator and of the electric driver circuitry. The devices are fabricated in a commercial silicon photonics line and can hence be combined with the full portfolio of standard silicon photonic devices. We expect that high-speed power-efficient SOH modulators may have transformative impact on short-reach optical networks, enabling compact transceivers with unprecedented energy efficiency that will be at the heart of future Ethernet interfaces at Tbit/s data rates

    A programmable, multi-format photonic transceiver platform enabling flexible optical networks

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    Development of programmable photonic devices for future flexible optical networks is ongoing. To this end, an innovative, multi-format QAM transmitter design is presented. It comprises a segmented-electrode InP IQ-MZM to be fabricated in InP, which can be directly driven by low-power CMOS logic. Arbitrary optical QAM format generation is made possible using only binary electrical signals, without the need for high-performance DACs and high-swing linear drivers. The concept enables a host of Tx-side DSP functionality, including the spectral shaping needed for Nyquist-WDM system concepts. In addition, we report on the development of an optical channel MUX/DEMUX, based on arrays of microresonator filters with reconfigurable bandwidths and center wavelengths. The device is intended for operation with multi-format flexible transceivers, enabling Dense (D)WDM superchannel aggregation and arbitrary spectral slicing in the context of a flexible grid environment

    Segmented optical transmitter comprising a CMOS driver array and an InP IQ-MZM for advanced modulation formats

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    Segmented Mach-Zehnder modulators are promising solutions to generate complex modulation schemes in the migration towards optical links with a higher-spectral efficiency. We present an optical transmitter comprising a segmented-electrode InP IQ-MZM, capable of multilevel optical signal generation (5-bit per I/Q arm) by employing direct digital drive from integrated, low-power (1W) CMOS binary drivers. We discuss the advantages and design tradeoffs of the segmented driver structure and the implementation in a 40 nm CMOS technology. Multilevel operation with combined phase and amplitude modulation is demonstrated experimentally on a single MZM of the device for 2-ASK-2PSK and 4-ASK-2-PSK, showing potential for respectively 16-QAM and 64-QAM modulation in future assemblies

    Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

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    We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a {\pi}-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit

    Multi-level optical signal generation using a segmented-electrode InP IQ-MZM with integrated CMOS binary drivers

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    We present a segmented-electrode InP IQ-MZM, capable of multi-level optical signal generation (5-bit per I/Q arm) by employing direct digital drive from integrated, low-power (1W) CMOS binary drivers. Programmable, multi-level operation is demonstrated experimentally on one MZM of the device

    Broadband distributed drivers for 3D photonic-electronic wafer-scale packaging

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    Broadband distributed drivers for 3D photonic-electronic wafer-scale packaging

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