4,463 research outputs found

    Design and implementation of the Front End Board for the readout of the ATLAS liquid argon calorimeters

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    The ATLAS detector has been designed for operation at CERN's Large Hadron Collider. ATLAS includes a complex system of liquid argon calorimeters. The electronics for amplifying, shaping, sampling, pipelining, and digitizing the calorimeter signals is implemented on the Front End Boards (FEBs). This paper describes the design, implementation and production of the FEBs and presents measurement results from testing performed at several stages during the production process

    Design, Characterization and Analysis of Component Level Electrostatic Discharge (ESD) Protection Solutions

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    Electrostatic Discharges (ESD) is a significant hazard to electronic components and systems. Based on a specific process technology, a given circuit application requires a customized ESD consideration that meets all the requirements such as the core circuit\u27s operating condition, maximum accepted leakage current, breakdown conditions for the process and overall device sizes. In every several years, there will be a new process technology becomes mature, and most of those new technology requires custom design of effective ESD protection solution. And usually the design window will shrinks due to the evolving of the technology becomes smaller and smaller. The ESD related failure is a major IC reliability concern and results in a loss of millions dollars each year in the semiconductor industry. To emulate the real word stress condition, several ESD stress models and test methods have been developed. The basic ESD models are Human Body model (HBM), Machine Mode (MM), and Charge Device Model (CDM). For the system-level ESD robustness, it is defined by different standards and specifications than component-level ESD requirements. International Electrotechnical Commission (IEC) 61000-4-2 has been used for the product and the Human Metal Model (HMM) has been used for the system at the wafer level. Increasingly stringent design specifications are forcing original equipment manufacturers (OEMs) to minimize the number of off-chip components. This is the case in emerging multifunction mobile, industrial, automotive and healthcare applications. It requires a high level of ESD robustness and the integrated circuit (IC) level, while finding ways to streamline the ESD characterization during early development cycle. To enable predicting the ESD performance of IC\u27s pins that are directly exposed to a system-level stress condition, a new the human metal model (HMM) test model has been introduced. In this work, a new testing methodology for product-level HMM characterization is introduced. This testing framework allows for consistently identifying ESD-induced failures in a product, substantially simplifying the testing process, and significantly reducing the product evaluation time during development cycle. It helps eliminates the potential inaccuracy provided by the conventional characterization methodology. For verification purposes, this method has been applied to detect the failures of two different products. Addition to the exploration of new characterization methodology that provides better accuracy, we also have looked into the protection devices itself. ICs for emerging high performance precision data acquisition and transceivers in industrial, automotive and wireless infrastructure applications require effective and ESD protection solutions. These circuits, with relatively high operating voltages at the Input/Output (I/O) pins, are increasingly being designed in low voltage Complementary Metal-Oxide-Semiconductor (CMOS) technologies to meet the requirements of low cost and large scale integration. A new dual-polarity SCR optimized for high bidirectional blocking voltages, high trigger current and low capacitance is realized in a sub 3-V, 180-nm CMOS process. This ESD device is designed for a specific application where the operating voltage at the I/O is larger than that of the core circuit. For instance, protecting high voltage swing I/Os in CMOS data acquisition system (DAS) applications. In this reference application, an array of thin film resistors voltage divider is directly connected to the interface pin, reducing the maximum voltage that is obtained at the core device input down to ± 1-5 V. Its ESD characteristics, including the trigger voltage and failure current, are compared against those of a typical CMOS-based SCR. Then, we have looked into the ESD protection designs into more advanced technology, the 28-nm CMOS. An ESD protection design builds on the multiple discharge-paths ESD cell concept and focuses the attention on the detailed design, optimization and realization of the in-situ ESD protection cell for IO pins with variable operation voltages. By introducing different device configurations fabricated in a 28-nm CMOS process, a greater flexibility in the design options and design trade-offs can be obtained in the proposed topology, thus achieving a higher integration and smaller cell size definition for multi-voltage compatibility interface ESD protection applications. This device is optimized for low capacitance and synthesized with the circuit IO components for in-situ ESD protection in communication interface applications developed in a 28-nm, high-k, and metal-gate CMOS technology. ESD devices have been used in different types of applications and also at different environment conditions, such as high temperature. At the last section of this research work, we have performed an investigation of several different ESD devices\u27 performance under various temperature conditions. And it has been shown that the variations of the device structure can results different ESD performance, and some devices can be used at the high temperature and some cannot. And this investigation also brings up a potential threat to the current ESD protection devices that they might be very vulnerable to the latch-up issue at the higher temperature range

    A SiGe BiCMOS LVDS Driver for Space-Borne Applications

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    When designing an integrated circuit for use during an interstellar mission, certain precautions must be made. The electronics on any off-earth mission will be exposed to wide temperature swings and harmful radiation due to being outside of the Earth’s protective ionosphere. It is crucial that any data path present be immune to these detrimental effects. The introduction of galactic radiation can not only cause the onboard electronics to fail due to device degradation and single event latchup but can also lead to background radiation being coupled into the signal path as unwanted noise, degrading the signal to noise ratio. Unwanted noise can cause total failure by increasing the noise level and decreasing the signal to noise ratio below one or can cause errors such as single event upsets. The wide temperature swing can cause device degradation and eventually failure. This issue is commonly mitigated by the introduction of an environment chamber but such an enclosure adds unnecessary mass and typically requires a large amount of current to effectively keep the electronics in an Earth-like temperature. The large current implies high power dissipation which is an unnecessary strain on the battery and can shorten the lifetime of a mission where every kilowatt-hour is crucial to success. The solution to these two non-trivial obstacles is to design an electronic circuit such that it can operate in a wide range of temperatures and can withstand the galactic radiation that it will inevitably encounter during its mission’s lifetime. The following thesis will document the design, simulation, and testing of a Si-Ge Bi-CMOS low voltage differential signal driver for space borne applications

    Exploration and Design of Power-Efficient Networked Many-Core Systems

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    Multiprocessing is a promising solution to meet the requirements of near future applications. To get full benefit from parallel processing, a manycore system needs efficient, on-chip communication architecture. Networkon- Chip (NoC) is a general purpose communication concept that offers highthroughput, reduced power consumption, and keeps complexity in check by a regular composition of basic building blocks. This thesis presents power efficient communication approaches for networked many-core systems. We address a range of issues being important for designing power-efficient manycore systems at two different levels: the network-level and the router-level. From the network-level point of view, exploiting state-of-the-art concepts such as Globally Asynchronous Locally Synchronous (GALS), Voltage/ Frequency Island (VFI), and 3D Networks-on-Chip approaches may be a solution to the excessive power consumption demanded by today’s and future many-core systems. To this end, a low-cost 3D NoC architecture, based on high-speed GALS-based vertical channels, is proposed to mitigate high peak temperatures, power densities, and area footprints of vertical interconnects in 3D ICs. To further exploit the beneficial feature of a negligible inter-layer distance of 3D ICs, we propose a novel hybridization scheme for inter-layer communication. In addition, an efficient adaptive routing algorithm is presented which enables congestion-aware and reliable communication for the hybridized NoC architecture. An integrated monitoring and management platform on top of this architecture is also developed in order to implement more scalable power optimization techniques. From the router-level perspective, four design styles for implementing power-efficient reconfigurable interfaces in VFI-based NoC systems are proposed. To enhance the utilization of virtual channel buffers and to manage their power consumption, a partial virtual channel sharing method for NoC routers is devised and implemented. Extensive experiments with synthetic and real benchmarks show significant power savings and mitigated hotspots with similar performance compared to latest NoC architectures. The thesis concludes that careful codesigned elements from different network levels enable considerable power savings for many-core systems.Siirretty Doriast

    Addressing Manufacturing Challenges in NoC-based ULSI Designs

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    Hernández Luz, C. (2012). Addressing Manufacturing Challenges in NoC-based ULSI Designs [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/1669

    The digital data processing concepts of the LOFT mission

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    The Large Observatory for X-ray Timing (LOFT) is one of the five mission candidates that were considered by ESA for an M3 mission (with a launch opportunity in 2022 - 2024). LOFT features two instruments: the Large Area Detector (LAD) and the Wide Field Monitor (WFM). The LAD is a 10 m 2 -class instrument with approximately 15 times the collecting area of the largest timing mission so far (RXTE) for the first time combined with CCD-class spectral resolution. The WFM will continuously monitor the sky and recognise changes in source states, detect transient and bursting phenomena and will allow the mission to respond to this. Observing the brightest X-ray sources with the effective area of the LAD leads to enormous data rates that need to be processed on several levels, filtered and compressed in real-time already on board. The WFM data processing on the other hand puts rather low constraints on the data rate but requires algorithms to find the photon interaction location on the detector and then to deconvolve the detector image in order to obtain the sky coordinates of observed transient sources. In the following, we want to give an overview of the data handling concepts that were developed during the study phase.Comment: Proc. SPIE 9144, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray, 91446

    The ARIEL Instrument Control Unit design for the M4 Mission Selection Review of the ESA's Cosmic Vision Program

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    The Atmospheric Remote-sensing Infrared Exoplanet Large-survey mission (ARIEL) is one of the three present candidates for the ESA M4 (the fourth medium mission) launch opportunity. The proposed Payload will perform a large unbiased spectroscopic survey from space concerning the nature of exoplanets atmospheres and their interiors to determine the key factors affecting the formation and evolution of planetary systems. ARIEL will observe a large number (>500) of warm and hot transiting gas giants, Neptunes and super-Earths around a wide range of host star types, targeting planets hotter than 600 K to take advantage of their well-mixed atmospheres. It will exploit primary and secondary transits spectroscopy in the 1.2-8 um spectral range and broad-band photometry in the optical and Near IR (NIR). The main instrument of the ARIEL Payload is the IR Spectrometer (AIRS) providing low-resolution spectroscopy in two IR channels: Channel 0 (CH0) for the 1.95-3.90 um band and Channel 1 (CH1) for the 3.90-7.80 um range. It is located at the intermediate focal plane of the telescope and common optical system and it hosts two IR sensors and two cold front-end electronics (CFEE) for detectors readout, a well defined process calibrated for the selected target brightness and driven by the Payload's Instrument Control Unit (ICU).Comment: Experimental Astronomy, Special Issue on ARIEL, (2017

    Infrastructure for Detector Research and Development towards the International Linear Collider

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    The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.Comment: 54 pages, 48 picture
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