Analogue to Digital and Digital to Analogue Converters (ADCs and DACs): A Review Update

This is a review paper updated from that presented for CAS 2004. Essentially, since then, commercial components have continued to extend their performance boundaries but the basic building blocks and the techniques for choosing the best device and implementing it in a design have not changed. Analogue to digital and digital to analogue converters are crucial components in the continued drive to replace analogue circuitry with more controllable and less costly digital processing. This paper discusses the technologies available to perform in the likely measurement and control applications that arise within accelerators. It covers much of the terminology and 'specmanship' together with an application-oriented analysis of the realisable performance of the various types. Finally, some hints and warnings on system integration problems are given.Comment: 15 pages, contribution to the 2014 CAS - CERN Accelerator School: Power Converters, Baden, Switzerland, 7-14 May 201

Robust low power CMOS methodologies for ISFETs instrumentation

I have developed a robust design methodology in a 0.18 [Mu]m commercial CMOS process to circumvent the performance issues of the integrated Ions Sensitive Field Effect Transistor (ISFET) for pH detection. In circuit design, I have developed frequency domain signal processing, which transforms pH information into a frequency modulated signal. The frequency modulated signal is subsequently digitized and encoded into a bit-stream of data. The architecture of the instrumentation system consists of a) A novel front-end averaging amplifier to interface an array of ISFETs for converting pH into a voltage signal, b) A high linear voltage controlled oscillator for converting the voltage signal into a frequency modulated signal, and c) Digital gates for digitizing and differentiating the frequency modulated signal into an output bit-stream. The output bit stream is indistinguishable to a 1st order sigma delta modulation, whose noise floor is shaped by +20dB/decade. The fabricated instrumentation system has a dimension of 1565 [Mu] m 1565 [Mu] m. The chip responds linearly to the pH in a chemical solution and produces a digital output, with up to an 8-bit accuracy. Most importantly, the fabricated chips do not need any post-CMOS processing for neutralizing any trapped-charged effect, which can modulate on-chip ISFETs’ threshold voltages into atypical values. As compared to other ISFET-related works in the literature, the instrumentation system proposed in this thesis can cope with the mismatched ISFETs on chip for analogue-to-digital conversions. The design methodology is thus very accurate and robust for chemical sensing

Multi-stage noise shaping (MASH) delta-sigma modulators for wideband and multi-standard applications

Imperial Users onl

Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

A Mixed-Signal Feed-Forward Neural Network Architecture Using A High-Resolution Multiplying D/A Conversion Method

Artificial Neural Networks (ANNs) are parallel processors capable of learning from a set of sample data using a specific learning rule. Such systems are commonly used in applications where human brain may surpass conventional computers such as image processing, speech/character recognition, intelligent control and robotics to name a few. In this thesis, a mixed-signal neural network architecture is proposed employs a high resolution Multiplying Digital to Analog Converter (MDAC) designed using Delta Sigma Modulation (DSM). To reduce chip are, multiplexing is used in addition to analog implementation of arithmetic operations. This work employs a new method for filtering the high bit-rate signals using neurons nonlinear transfer function already existing in the network. Therefore, a configuration of a few MOS transistors are replacing the large resistors required to implement the low-pass filter in the network. This configuration noticeably decreases the chip area and also makes multiplexing feasible for hardware implementation

Design of a Class-D RF power amplifier in CMOS technology

In this thesis an RF Class-D Power Amplifier is presented. The analysis of the Class-D amplifier considering ideal components has shown that the drain efficiency of 100% can be achieved. The output power and the drain efficiency are degraded by the internal resistance of each component. A driver is used to drive the gate capacitances of the Class-D amplifier. Both driver and amplifier are implemented with CMOS inverters. The size of the inverters in the driver is scaled down by a factor of 3 relatively to the preceding stage. The first being the inverter of the Class-D amplifier. At the output a 3rd order Butterworth bandpass filter is implemented. A non-ideal analysis of the Class-D amplifier is performed to create a base model which is used to aid in the design of the circuit. The RF Class-D Power Amplifier with the operation frequency of 2.4GHz was implemented with standard 130 nm CMOS technology. Two simulations were taken into account considering ideal and pre-layout components in the output filter. The following results were obtained when using ideal components: the output power of 6.91 dBm, the drain efficiency of 40% and the overall efficiency of 23%. Using pre-layout components the results were the following: the output power of 0.317 dBm the drain and overall efficiency of 8.6% and 4.9%, respectively

Performance evaluation of currently available VLSI implementations satisfying U-interface requirements for an ISDN in South Africa.

A project report submitted to the Faculty of Engineering, University of the Witwatersrand, Johannesburg, in partial fulfilment of the requirements for the degree of Master of Science in Engineering.This project report examines the performance of three VLSI U-interface implementations satisfying the requirements of Basic Access on an ISDN. The systems evaluated are the Intel 89120,Siemens PEB2090 and STC DSP144, operating on 2BIQ, MMS4J and SU32 line codes respectively. Before evaluating the three abovementioned systems, a review of the underlying principles of U-interface technology is presented. Included in the review are aspects of transmission line theory, line coding, echo-cancellation, decision feedback equalisation, and pulse density modulation. The functional specifications of the three systems are then presented followed by a practical evaluation of each system. As an aid to testing the transmission systems, an evaluation board has been designed and built. The latter provides the necessary functionality to correctly activate each system, as well as the appropriate interfacing requirements for the error-rate tester. The U-interface transmission systems are evaluated on a number of test-loops, comprising sections of cable varying in length and gauge. Additionally, impairments are injected into data-carrying cables, in order to test the performance of each system in the presence of noise. The results of each test are recorded and analysed. Finally, a recommendation is made in favour of the 2BIQ U-interface. It is shown to offer superior transmission performance, at the expense of a slightly higher transmit-power level.Andrew Chakane 201