873 research outputs found

    High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications

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    abstract: As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently. In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Design methodology for general enhancement of a single-stage self-compensated folded-cascode operational transconductance amplifiers in 65 nm CMOS process

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    The problems resulting from the use of nano-MOSFETs in the design of operational trans-conductance amplifiers (OTAs) lead to an urgent need for new design techniques to produce high-performance metrics OTAs suitable for very high-frequency applications. In this paper, the enhancement techniques and design equations for the proposed single-stage folded-cascode operational trans-conductance amplifiers (FCOTA) are presented for the enhancement of its various performance metrics. The proposed single-stage FCOTA adopts the folded-cascode (FC) current sources with cascode current mirrors (CCMs) load. Using 65 nm complementary metal-oxide semiconductor (CMOS) process from predictive technology model (PTM), the HSPICE2019-based simulation results show that the designed single-stage FCOTA can achieve a high open-loop differential-mode DC voltage gain of 65.64 dB, very high unity-gain bandwidth of 263 MHz, very high stability with phase-margin of 73°, low power dissipation of 0.97 mW, very low DC input-offset voltage of 0.14 uV, high swing-output voltages from −0.97 to 0.91 V, very low equivalent input-referred noise of 15.8 nV/Hz, very high common-mode rejection ratio of 190.64 dB, very high positive/negative slew-rates of 157.5/58.3 V⁄us, very fast settling-time of 5.1 ns, high extension input common-mode range voltages from −0.44to 1 V, and high positive/negative power-supply rejection ratios of 75.5/68.8 dB. The values of the small/large-signal figures-of-merits (s) are the highest when compared to other reported FCOTAs in the literature

    ±0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit

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    A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differential–difference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kΩ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 μW static power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMSS = 12.69 MHzpFμW−1, a large signal figure of merit FOMLS = 34.89 (V/μs) pFμW−1, CMRR = 102 dB, PSRR+ = 109 dB, PSRR− = 100 dB, 1.1 μV/√Hz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage.Junta de Andalucía - Consejería de Economía, Conocimiento, Empresas y Universidades P18-FR-4317Agencia Estatal de Investigación - FEDER PID2019-107258RB-C3

    Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

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    Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.Agencia Estatal de Investigación PID2019-107258RB-C32Unión Europea PID2019-107258RB-C3

    Energy-efficient amplifiers based on quasi-floating gate techniques

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    Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.This research was funded by AEI/FEDER, grant number PID2019-107258RB-C32
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