Current and Voltage Conveyors in Current- and Voltage-Mode Precision Full-Wave Rectifiers

In this paper new versatile precision full-wave rectifiers using current and/or voltage conveyors as active elements and two diodes are presented. The performance of these circuit solutions is analysed and compared to the opamp based precision rectifier. To analyze the behavior of the functional blocks, the frequency dependent RMS error and DC transient value are evaluated for different values of input voltage amplitudes. Furthermore, experimental results are given that show the feasibilities of the conveyor based rectifiers superior to the corresponding operational amplifier based topology

Minimum component high frequency current mode rectifier

In this paper a current mode full wave rectifier circuit is proposed. The current mode rectifiercircuit is implemented utilizing a floating current source (FCS) as an active element. Theminimum component full wave rectifier utilizes only a single floating current source, twodiodes and two grounded resistors. The extremely simple implementation enjoys highfrequency operation and provides both inverting and non-inverting rectified outputssimultaneously. The rectifier system can work up to a frequency of 500MHz with acceptabledistortion. The circuit exhibits low power consumption at ±0.75V supply voltage. Thenon-ideal and temperature analysis was also performed to study their impact on itsperformance. It was also shown that FCS can work as half wave rectifier as well. Theperformance of the circuit is evaluated using 0.18μm TSMC CMOS parameters using Hspice.Keywords: current-mode circuits; floating current source; high frequency; rectifier

A Novel Current-Mode Full-Wave Rectifier Based on One CDTA and Two Diodes

Precision rectifiers are important building blocks for analog signal processing. The traditional approach based on diodes and operational amplifiers (OpAmps) exhibits undesirable effects caused by limited OpAmp slew rate and diode commutations. In the paper, a full-wave rectifier based on one CDTA and two Schottky diodes is presented. The PSpice simulation results are included

A single MO-CFTA based electronically/temperature insensitive current-mode half-wave and full-wave rectifiers

The article presents a current-mode full-wave rectifier employing multiple output current follower transconductance amplifier (MO-CFTA). The both circuits description is very simple, it merely comprises only single MO-CFTA, without external passive element. In addition, the magnitude and direction of output currents can be controlled via electronically method. Furthermore, the outputs are independent of the thermal voltage (VT). The performances of the proposed circuits are investigated through PSpice. They show that the proposed circuits can function as a current-mode precision half-wave and full-wave rectifiers where input current range from 0uA to 514uA and -518uA to 518uA, respectively. They can be achieved at ±2V power supplies. The maximum power consumption is 3,01mW

±0.25-V Class-AB CMOS Capacitance Multiplier and Precision Rectifiers

Reduction of minimum supply requirements is a crucial aspect to decrease the power consumption in VLSI systems. A high-performance capacitance multiplier able to operate with supplies as low as ±0.25 V is presented. It is based on adaptively biased class-AB current mirrors which provide high current efficiency. Measurement results of a factor 11 capacitance multiplier fabricated in 180-nm CMOS technology verify theoretical claims. Moreover, low-voltage precision rectifiers based on the same class-AB current mirrors are designed and fabricated in the same CMOS process. They generate output currents over 100 times larger than the quiescent current. Both proposed circuits have 300-nW static power dissipation when operating with ±0.25-V supplies

Current-Mode Dual-Phase Precision Full-Wave Rectifier Using Current-Mode Two-Cell Winner-Takes-All (WTA) Circuit

In addition to the recently proposed full-wave rectifier by Prommee et al. using voltage-mode (VM)two-cell winner-takes-all (WTA) circuit, we present current-mode (CM) precision full-wave rectifier using CM two-cell WTA circuit. The popular Lazzaro’s CM WTA circuit has been employed for the purpose and there is no requirement of inverting the input signal. Also, dual complimentary phases of the output current signal are available from high-output impedance terminals for explicit utilization. As compared to many recently proposed CM rectifiers using complex active devices, e.g. dual-X current conveyor or universal voltage conveyor, our circuit is very compact and requires a total of 21 transistors. SPICE simulation results of the circuit implemented using 0.35 um TSMC CMOS technology are provided which verify the workability of the proposed circuit

High-power converters for space applications

Phase 1 was a concept definition effort to extend space-type dc/dc converter technology to the megawatt level with a weight of less than 0.1 kg/kW (220 lb./MW). Two system designs were evaluated in Phase 1. Each design operates from a 5 kV stacked fuel cell source and provides a voltage step-up to 100 kV at 10 A for charging capacitors (100 pps at a duty cycle of 17 min on, 17 min off). Both designs use an MCT-based, full-bridge inverter, gaseous hydrogen cooling, and crowbar fault protection. The GE-CRD system uses an advanced high-voltage transformer/rectifier filter is series with a resonant tank circuit, driven by an inverter operating at 20 to 50 kHz. Output voltage is controlled through frequency and phase shift control. Fast transient response and stability is ensured via optimal control. Super-resonant operation employing MCTs provides the advantages of lossless snubbing, no turn-on switching loss, use of medium-speed diodes, and intrinsic current limiting under load-fault conditions. Estimated weight of the GE-CRD system is 88 kg (1.5 cu ft.). Efficiency of 94.4 percent and total system loss is 55.711 kW operating at 1 MW load power. The Maxwell system is based on a resonance transformer approach using a cascade of five LC resonant sections at 100 kHz. The 5 kV bus is converted to a square wave, stepped-up to a 100 kV sine wave by the LC sections, rectified, and filtered. Output voltage is controlled with a special series regulator circuit. Estimated weight of the Maxwell system is 83.8 kg (4.0 cu ft.). Efficiency is 87.2 percent and total system loss is 146.411 kW operating at 1 MW load power

Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin‐Film Circuitry for Low‐Cost Wireless Energy Harvesting

Direct additive fabrication of thin‐film electronics using a high‐mobility, wide‐bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin‐film diodes (V‐TFDs) offer superior efficiency and higher frequency operation compared to lateral thin‐film transistors (TFTs). However, the AOS V‐TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution‐process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V‐TFD, while the simultaneous diffusion of Mo increases the diode’s voltage range of operation. The resulting V‐TFDs are demonstrated in a full‐wave rectifier for wireless energy harvesting from a commercial radio‐frequency identification reader. Finally, by using the same Mo film for V‐TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V‐TFDs opens a new fabrication route for future low‐cost and large‐area thin‐film circuitry with embedded power management.A facile solution processing method is developed that can fabricate vertical thin‐film diodes and lateral thin‐film transistors in a single process. By exploiting in situ redox and diffusion of a bottom molybdenum electrode occurring during semiconductor deposition, the thin‐film diodes achieve high voltage and high‐frequency operation. Furthermore, their use in full‐wave rectifiers is demonstrated for wireless energy harvesting.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/147743/1/adfm201806002_am.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/147743/2/adfm201806002-sup-0001-S1.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/147743/3/adfm201806002.pd