17,782 research outputs found
A Review on Mechanics and Mechanical Properties of 2D Materials - Graphene and Beyond
Since the first successful synthesis of graphene just over a decade ago, a
variety of two-dimensional (2D) materials (e.g., transition
metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered.
Among the many unique and attractive properties of 2D materials, mechanical
properties play important roles in manufacturing, integration and performance
for their potential applications. Mechanics is indispensable in the study of
mechanical properties, both experimentally and theoretically. The coupling
between the mechanical and other physical properties (thermal, electronic,
optical) is also of great interest in exploring novel applications, where
mechanics has to be combined with condensed matter physics to establish a
scalable theoretical framework. Moreover, mechanical interactions between 2D
materials and various substrate materials are essential for integrated device
applications of 2D materials, for which the mechanics of interfaces (adhesion
and friction) has to be developed for the 2D materials. Here we review recent
theoretical and experimental works related to mechanics and mechanical
properties of 2D materials. While graphene is the most studied 2D material to
date, we expect continual growth of interest in the mechanics of other 2D
materials beyond graphene
Wafer bonding solution to epitaxial graphene - silicon integration
The development of graphene electronics requires the integration of graphene
devices with Si-CMOS technology. Most strategies involve the transfer of
graphene sheets onto silicon, with the inherent difficulties of clean transfer
and subsequent graphene nano-patterning that degrades considerably the
electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by
contrast is grown on an essentially perfect crystalline (semi-insulating)
surface, and graphene nanostructures with exceptional properties have been
realized by a selective growth process on tailored SiC surface that requires no
graphene patterning. However, the temperatures required in this structured
growth process are too high for silicon technology. Here we demonstrate a new
graphene to Si integration strategy, with a bonded and interconnected compact
double-wafer structure. Using silicon-on-insulator technology (SOI) a thin
monocrystalline silicon layer ready for CMOS processing is applied on top of
epitaxial graphene on SiC. The parallel Si and graphene platforms are
interconnected by metal vias. This method inspired by the industrial
development of 3d hyper-integration stacking thin-film electronic devices
preserves the advantages of epitaxial graphene and enables the full spectrum of
CMOS processing.Comment: 15 pages, 7 figure
Chalcogenide Glass-on-Graphene Photonics
Two-dimensional (2-D) materials are of tremendous interest to integrated
photonics given their singular optical characteristics spanning light emission,
modulation, saturable absorption, and nonlinear optics. To harness their
optical properties, these atomically thin materials are usually attached onto
prefabricated devices via a transfer process. In this paper, we present a new
route for 2-D material integration with planar photonics. Central to this
approach is the use of chalcogenide glass, a multifunctional material which can
be directly deposited and patterned on a wide variety of 2-D materials and can
simultaneously function as the light guiding medium, a gate dielectric, and a
passivation layer for 2-D materials. Besides claiming improved fabrication
yield and throughput compared to the traditional transfer process, our
technique also enables unconventional multilayer device geometries optimally
designed for enhancing light-matter interactions in the 2-D layers.
Capitalizing on this facile integration method, we demonstrate a series of
high-performance glass-on-graphene devices including ultra-broadband on-chip
polarizers, energy-efficient thermo-optic switches, as well as graphene-based
mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators
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Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide
We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) AlO by tailoring the growth parameters to achieve effective device encapsulation whilst enabling the passivation of charge traps in the underlying gate dielectric. We relate the passivation of charge trap states in the vicinity of the graphene to conformal growth of ALD oxide governed by gaseous HO pretreatments. We demonstrate the long term stability of such encapsulation techniques and the resulting insensitivity towards additional lithography steps to enable vertical device integration of graphene for multi-stacked electronics fabrication.This work was supported by the EPSRC (Grant Nos. EP/K016636/1, GRAPHTED and EP/L020963/1) and the ERC (Grant No. 279342, InsituNANO). JAA-W acknowledges a Research Fellowship from Churchill College, Cambridge. JS acknowledges support from NUDT. ZAVV acknowledges funding from ESPRC grant EP/L016087/1. ACV acknowledges the Conacyt Cambridge Scholarship and the Roberto Rocca Fellowship. RW acknowledges EPSRC Doctoral Training Award (EP/M506485/1)
Electrochemical integration of graphene with light absorbing copper-based thin films
We present an electrochemical route for the integration of graphene with
light sensitive copper-based alloys used in optoelectronic applications.
Graphene grown using chemical vapor deposition (CVD) transferred to glass is
found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um
thickness can be deposited. The effect of growth parameters on the morphology
and photoconductivity of Cu_{x}S films is presented. Current-voltage
characterization and photoconductivity decay experiments are performed with
graphene as one contact and silver epoxy as the other
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