Optical properties of tensilely strained Ge nanomembranes

Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.The Ge nanomembrane fabrication and characterization efforts were supported initially by DOE under Grant DE-FG02-03ER46028, and subsequently by AFOSR under Grant FA9550-14-1-0361. The development of the photonic-crystal cavities was supported by NSF under Grant ECCS-1308534. The initial photoluminescence studies were funded by NSF under Grant DMR-0907296. The contribution from several students and research scientists involved in this research at Boston University and the University of Wisconsin-Madison (including Cicek Boztug, Francesca Cavallo, Feng Chen, Xiaorui Cui, RB Jacobson, Debbie Paskiewicz, Jose Sanchez-Perez, Pornsatit Sookchoo, Faisal Sudradjat, Xiaowei Wang, and Jian Yin) is also gratefully acknowledged. (DE-FG02-03ER46028 - DOE; FA9550-14-1-0361 - AFOSR; ECCS-1308534 - NSF; DMR-0907296 - NSF)Published versio

Rewritable nanoscale oxide photodetector

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.Comment: 5 pages, 5 figures. Supplementary Information 7 pages, 9 figure

Interfacing single photons and single quantum dots with photonic nanostructures

Photonic nanostructures provide means of tailoring the interaction between light and matter and the past decade has witnessed a tremendous experimental and theoretical progress in this subject. In particular, the combination with semiconductor quantum dots has proven successful. This manuscript reviews quantum optics with excitons in single quantum dots embedded in photonic nanostructures. The ability to engineer the light-matter interaction strength in integrated photonic nanostructures enables a range of fundamental quantum-electrodynamics experiments on, e.g., spontaneous-emission control, modified Lamb shifts, and enhanced dipole-dipole interaction. Furthermore, highly efficient single-photon sources and giant photon nonlinearities may be implemented with immediate applications for photonic quantum-information processing. The review summarizes the general theoretical framework of photon emission including the role of dephasing processes, and applies it to photonic nanostructures of current interest, such as photonic-crystal cavities and waveguides, dielectric nanowires, and plasmonic waveguides. The introduced concepts are generally applicable in quantum nanophotonics and apply to a large extent also to other quantum emitters, such as molecules, nitrogen vacancy ceters, or atoms. Finally, the progress and future prospects of applications in quantum-information processing are considered.Comment: Updated version resubmitted to Reviews of Modern Physic

State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths

Silicon-based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption - due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well-established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state-of-the-art is presented. Devices based on defect-mediated absorption, two-photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $\lambda-$layer has a greater electronic bandgap; pumping with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth