Solid-state transformers in locomotives fed through AC lines: A review and future developments

One of the most important innovation expectation in railway electrical equipment is the replacement of the on-board transformer with a high power converter. Since the transformer operates at line-frequency (i.e., 50 Hz or 16 2/3 Hz), it represents a critical component from weight point of view and, moreover, it is characterized by quite poor efficiency. High power converters for this application are characterized by a medium frequency inductive coupling and are commonly referred as Power Electronic Transformers (PET), Medium Frequency Topologies or Solid-State Transformers (SST). Many studies were carried out and various prototypes were realized until now, however, the realization of such a system has some difficulties, mainly related to the high input voltage (i.e., 25 kV for 50 Hz lines and 15 kV for 16 2/3 Hz lines) and the limited performance of available power electronic switches. The aim of this study is to present a survey on the main solutions proposed in the technical literature and, analyzing pros and cons of these studies, to introduce new possible circuit topologies for this application

High power high frequency DC-DC converter topologies for use in off-line power supplies

The development of a DC-DC converter for use in a proposed range of one to ten kilowatt off-line power supplies is presented. The converter makes good use of established design practices and recent technical advances. The thesis begins with a review of traditional design practices, which are used in the design of a 3kW, 48V output DC-DC converter, as a bench-mark for evaluation of recent technical advances. Advances evaluated include new converter circuits, control techniques, components, and magnetic component designs. Converter circuits using zero voltage switching (ZVS) transitions offer significant advantages for this application. Of the published converters which have ZVS transitions the phase shift controlled full bridge converter is the most suitable, and assessments of variations on this circuit are presented. During the course of the research it was realised that the ZVS range of one leg of the phase shift controlled full bridge converter could be extended by altering the switching pattern, and this new switching pattern is proposed. A detailed analysis of phase shift controlled full bridge converter operation uncovers a number of operational findings which give a better and more complete understanding of converter operation than hitherto published. Converter design equations and guidelines are presented and the effects of the new improvement are investigated by an approximate analysis. Computer simulations using PSPICE2 are carried out to predict converter performance. A prototype converter design, construction details and test results are given. The results obtained compare well to the predicted performance and confirm the advantages of the new switching pattern

Power Semiconductors for An Energy-Wise Society

This IEC White Paper establishes the critical role that power semiconductors play in transitioning to an energy wise society. It takes an in-depth look at expected trends and opportunities, as well as the challenges surrounding the power semiconductors industry. Among the significant challenges mentioned is the need for change in industry practices when transitioning from linear to circular economies and the shortage of skilled personnel required for power semiconductor development. The white paper also stresses the need for strategic actions at the policy-making level to address these concerns and calls for stronger government commitment, policies and funding to advance power semiconductor technologies and integration. It further highlights the pivotal role of standards in removing technical risks, increasing product quality and enabling faster market acceptance. Besides noting benefits of existing standards in accelerating market growth, the paper also identifies the current standardization gaps. The white paper emphasizes the importance of ensuring a robust supply chain for power semiconductors to prevent supply-chain disruptions like those seen during the COVID-19 pandemic, which can have widespread economic impacts.The white paper highlights the importance of inspiring young professionals to take an interest in power semiconductors and power electronics, highlighting the potential to make a positive impact on the world through these technologies.The white paper concludes with recommendations for policymakers, regulators, industry and other IEC stakeholders for collaborative structures and accelerating the development and adoption of standards

Challenges and New Trends in Power Electronic Devices Reliability

The rapid increase in new power electronic devices and converters for electric transportation and smart grid technologies requires a deepanalysis of their component performances, considering all of the different environmental scenarios, overload conditions, and high stressoperations. Therefore, evaluation of the reliability and availability of these devices becomes fundamental both from technical and economicalpoints of view. The rapid evolution of technologies and the high reliability level offered by these components have shown that estimating reliability through the traditional approaches is difficult, as historical failure data and/or past observed scenarios demonstrate. With the aim topropose new approaches for the evaluation of reliability, in this book, eleven innovative contributions are collected, all focusedon the reliability assessment of power electronic devices and related components

Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications

10 kV SiC MOSFETs are promising to substantially boost the performance of future medium voltage (MV) converters, ranging from MV motor drives to fast charging stations for electric vehicles (EVs). Numerous factors influence the switching performance of 10 kV SiC MOSFETs with much faster switching speed than their Si counterparts. Thorough evaluation of their switching performance is necessary before applying them in MV converters. Particularly, the impact of parasitic capacitors in the MV converter and the freewheeling diode is investigated to understand the switching performance more comprehensively and guide the converter design based on 10 kV SiC MOSFETs.A 6.5 kV half bridge phase leg based on discrete 10 kV/20 A SiC MOSFETs is designed and fully validated to operate continuously at rated voltage with dv/dt up to 80 V/ns. Based on the phase leg, the impact of parasitic capacitors brought by the load inductor and the heatsink on the switching transients and performance of 10 kV SiC MOSFETs is investigated. Larger parasitic capacitors result in more oscillations, longer switching transients, as well as higher switching energy loss especially at low load current. As for the freewheeling diode, the body diode of 10 kV SiC MOSFETs is suitable to serve as the freewheeling diode, with negligible reverse recovery charge at various temperatures. The switching performance with and without the anti-parallel SiC junction barrier Schottky (JBS) diode is compared quantitatively. It is not recommended to add an anti-parallel diode for the 10 kV SiC MOSFET in the converter because it increases the switching loss

Characterisation of 3.3kV IGCTs for Medium Power Applications

Le développement des IGCT Basse Tension (3,3kV) vise un composant capable de travailler à fréquence élevée (>1 kHz) tout en gardant sa capacité « fort courant » (4kA). L'objectif final est d'augmenter les performances dynamiques des convertisseurs moyenne/forte puissance et d'étendre ainsi leur champ d'application. Pour la caractérisation des échantillons expérimentaux des IGCT 3,3kV, un banc d'essais basé sur une méthode d'opposition a été développé. Cette méthode permet l'évaluation des composants sous différentes conditions d'essai en mode de fonctionnement réel sans nécessité de sources d'alimentation de plusieurs MW. Une fois les échantillons caractérisés, l'analyse de l'applicabilité de ces composants dans des applications spécifiques aux réseaux ferroviaires SNCF est abordée. Finalement, une application de compensation de puissance réactive pour des réseaux monophasés a été étudiée en détail et une maquette de 100kVAR à base de IGCTs a été réalisée. ABSTRACT : The Low Voltage IGCT (3.3kV) is developed to provide a semiconductor able to work at high switching frequencies (>1kHz), preserving its « high current » capacity (4kA). The ultimate goal is to increase the dynamic performances of medium/high power converters, thus extending their application field. To characterise the experimental samples of 3.3kV IGCTs, an opposition method based test bench was developed. This method allows the components to be evaluated at different test conditions in real operation without the need of several megawatt power supplies. Once the samples were characterised, the applicability analysis of these components on specific applications related to the French railway network (SNCF) is performed. Finally, a reactive power compensation application for single-phase systems is studied in detail and a 100kVAR IGCT based set up is built

Developing A Medium-Voltage Three-Phase Current Compensator Using Modular Switching Positions

The objective of this thesis is to present the context, application, theory, design, construction, and testing of a proposed solution to unbalanced current loading on three-phase four-wire systems. This solution, known as the Medium-Voltage Unbalanced Current Static Compensator or MV-UCSC, is designed to recirculate currents between the three phases of adistribution system. Through this redistribution of the currents negative- and zero-sequence current components are eliminated and a balanced load is seen upstream from the point of installation. The MV-UCSC as it operates in the distribution system is presented followed by its effect on traditional compensation equipment. The construction of the MV-UCSC as well as 13.8 kV simulations are then shown. Development of the switching positions required by the MVUCSC is then given followed by a variation on this switching position with the intent to reduce part count. Finally, the testing the 13.8 kV three-phase four-wire, neutral-point-clamped, elevenlevel, flying-capacitor-based MV-UCSC connected directly to the grid is presented

Switching Performance Evaluation, Design, and Test of a Robust 10 kV SiC MOSFET Based Phase Leg for Modular Medium Voltage Converters

10 kV SiC MOSFETs are one of the most promising power semiconductor devices for next-generation high-performance modular medium voltage (MV) converters. With extraordinary device characteristics, 10 kV SiC MOSFETs also bring a variety of challenges in the design and test of MV converters. To tackle these inherent challenges, this dissertation focuses on a robust half bridge (HB) phase leg based on 10 kV SiC MOSFETs for modular MV converters. A baseline design and test of the phase leg is established first as the foundation of the research in this dissertation. Thorough evaluation of 10 kV SiC MOSFETs’ switching performance in a phase leg is necessary before applying them in MV converters. The impact of parasitic capacitors and the freewheeling diode is investigated to understand the switching performance more extensively and guide the converter design. One non-negligible challenge is the flashover fault resulting from the premature insulation breakdown, a short circuit fault with extremely fast transients. A device model is established to analyze the behavior of 10 kV SiC MOSFETs when the fault occurs in a phase leg thoroughly. Subsequently, the gate driver and protection design considerations are summarized to achieve lower short circuit current and overvoltage and ensure the survival of the MOSFET that in ON state when the fault happens. Furthermore, it is challenging to design the overcurrent/short circuit protection with fast response and strong noise immunity under fast switching transients for 10 kV SiC MOSFETs. The noise immunity of the desaturation (desat) protection is studied quantitatively to provide design guidelines for noise immunity enhancement. Then, the protection scheme based on desat protection is developed and validated withimmunity, the strong noise immunity of the developed protection is also successfully validated. In addition, a simple test scheme is proposed and validated experimentally, in order to qualify the HB phase leg based on the 10 kV SiC MOSFET comprehensively for the modular MV converter applications. The test scheme includes the ac-dc continuous test with two phase legs in series to create the testing condition similar to what is generated in a modular MV converter, especially the high dv/dt. The test scheme can fully test the capability of the phase leg to withstand high dv/dt and its resulting noise

Packaging Design of IGBT Power Module Using Novel Switching Cells

Parasitic inductance in power modules generates voltage spikes and current ringing during switching which cause extra stress in power electronic devices, increase electromagnetic interference (EMI), and degrade the performance of the power converter system. As newer power devices have faster switching speeds and higher power ratings, the effect of the parasitic inductance of the power module is more pronounced. This dissertation proposes a novel packaging method for power electronics modules based on the concepts of novel switching cells: P-cell and N-cell. It can reduce the stray inductance in the current commutation path in a phase-leg module and hence improve the switching behavior. Taking an insulated gate bipolar transistor (IGBT) as an example, two phase-leg modules, specifically a conventional module and a P-cell and N-cell based module were designed. Using Ansoft Q3D Extractor, electromagnetic simulation was carried out to extract the stray inductance from the two modules. An ABB 1200 V / 75 A IGBT model and a diode model were built for simulation study. Circuit parasitics were extracted and modeled. Switching behavior with different package parasitics was studied based on the Saber simulation. Two prototype phase-leg modules were fabricated. The parasitics were measured using a precision impedance analyzer. The measurement results agree with the simulation very well. A double pulse tester was built in laboratory. Several approaches were used to reduce the circuit and measuring parasitics. From the switching characteristics of the two modules, it was verified that the larger stray inductance in the layout causes higher voltage overshoot during turn off, which in turn increases the turn off losses. Multichip (two in parallel) IGBT modules applying novel switching cells was also designed. The parasitics were extracted and compared to a conventional design. The overall loop inductance was reduced in the proposed module. However, the mismatch of the paralleled branches was larger