Algorithm and Hardware Co-design for Learning On-a-chip

abstract: Machine learning technology has made a lot of incredible achievements in recent years. It has rivalled or exceeded human performance in many intellectual tasks including image recognition, face detection and the Go game. Many machine learning algorithms require huge amount of computation such as in multiplication of large matrices. As silicon technology has scaled to sub-14nm regime, simply scaling down the device cannot provide enough speed-up any more. New device technologies and system architectures are needed to improve the computing capacity. Designing specific hardware for machine learning is highly in demand. Efforts need to be made on a joint design and optimization of both hardware and algorithm. For machine learning acceleration, traditional SRAM and DRAM based system suffer from low capacity, high latency, and high standby power. Instead, emerging memories, such as Phase Change Random Access Memory (PRAM), Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), and Resistive Random Access Memory (RRAM), are promising candidates providing low standby power, high data density, fast access and excellent scalability. This dissertation proposes a hierarchical memory modeling framework and models PRAM and STT-MRAM in four different levels of abstraction. With the proposed models, various simulations are conducted to investigate the performance, optimization, variability, reliability, and scalability. Emerging memory devices such as RRAM can work as a 2-D crosspoint array to speed up the multiplication and accumulation in machine learning algorithms. This dissertation proposes a new parallel programming scheme to achieve in-memory learning with RRAM crosspoint array. The programming circuitry is designed and simulated in TSMC 65nm technology showing 900X speedup for the dictionary learning task compared to the CPU performance. From the algorithm perspective, inspired by the high accuracy and low power of the brain, this dissertation proposes a bio-plausible feedforward inhibition spiking neural network with Spike-Rate-Dependent-Plasticity (SRDP) learning rule. It achieves more than 95% accuracy on the MNIST dataset, which is comparable to the sparse coding algorithm, but requires far fewer number of computations. The role of inhibition in this network is systematically studied and shown to improve the hardware efficiency in learning.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Bio-inspired learning and hardware acceleration with emerging memories

Machine Learning has permeated many aspects of engineering, ranging from the Internet of Things (IoT) applications to big data analytics. While computing resources available to implement these algorithms have become more powerful, both in terms of the complexity of problems that can be solved and the overall computing speed, the huge energy costs involved remains a significant challenge. The human brain, which has evolved over millions of years, is widely accepted as the most efficient control and cognitive processing platform. Neuro-biological studies have established that information processing in the human brain relies on impulse like signals emitted by neurons called action potentials. Motivated by these facts, the Spiking Neural Networks (SNNs), which are a bio-plausible version of neural networks have been proposed as an alternative computing paradigm where the timing of spikes generated by artificial neurons is central to its learning and inference capabilities. This dissertation demonstrates the computational power of the SNNs using conventional CMOS and emerging nanoscale hardware platforms. The first half of this dissertation presents an SNN architecture which is trained using a supervised spike-based learning algorithm for the handwritten digit classification problem. This network achieves an accuracy of 98.17% on the MNIST test data-set, with about 4X fewer parameters compared to the state-of-the-art neural networks achieving over 99% accuracy. In addition, a scheme for parallelizing and speeding up the SNN simulation on a GPU platform is presented. The second half of this dissertation presents an optimal hardware design for accelerating SNN inference and training with SRAM (Static Random Access Memory) and nanoscale non-volatile memory (NVM) crossbar arrays. Three prominent NVM devices are studied for realizing hardware accelerators for SNNs: Phase Change Memory (PCM), Spin Transfer Torque RAM (STT-RAM) and Resistive RAM (RRAM). The analysis shows that a spike-based inference engine with crossbar arrays of STT-RAM bit-cells is 2X and 5X more efficient compared to PCM and RRAM memories, respectively. Furthermore, the STT-RAM design has nearly 6X higher throughput per unit Watt per unit area than that of an equivalent SRAM-based (Static Random Access Memory) design. A hardware accelerator with on-chip learning on an STT-RAM memory array is also designed, requiring $16$ bits of floating-point synaptic weight precision to reach the baseline SNN algorithmic performance on the MNIST dataset. The complete design with STT-RAM crossbar array achieves nearly 20X higher throughput per unit Watt per unit mm^2 than an equivalent design with SRAM memory. In summary, this work demonstrates the potential of spike-based neuromorphic computing algorithms and its efficient realization in hardware based on conventional CMOS as well as emerging technologies. The schemes presented here can be further extended to design spike-based systems that can be ubiquitously deployed for energy and memory constrained edge computing applications

Accelerate & Actualize: Can 2D Materials Bridge the Gap Between Neuromorphic Hardware and the Human Brain?

Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic structure, physical properties, and atomically-thin, van der Waals structures that enable ease of integration with conventional electronic materials and silicon-based hardware. All major classes of non-volatile memory (NVM) devices have been demonstrated using 2D materials, including their operation as synaptic devices for applications in neuromorphic computing hardware. Their atomically-thin structure, superior physical properties, i.e., mechanical strength, electrical and thermal conductivity, as well as gate-tunable electronic properties provide performance advantages and novel functionality in NVM devices and systems. However, device performance and variability as compared to incumbent materials and technology remain major concerns for real applications. Ultimately, the progress of 2D materials as a novel class of electronic materials and specifically their application in the area of neuromorphic electronics will depend on their scalable synthesis in thin-film form with desired crystal quality, defect density, and phase purity.Comment: Neuromorphic Computing, 2D Materials, Heterostructures, Emerging Memory Devices, Resistive, Phase-Change, Ferroelectric, Ferromagnetic, Crossbar Array, Machine Learning, Deep Learning, Spiking Neural Network

Leveraging the Intrinsic Switching Behaviors of Spintronic Devices for Digital and Neuromorphic Circuits

With semiconductor technology scaling approaching atomic limits, novel approaches utilizing new memory and computation elements are sought in order to realize increased density, enhanced functionality, and new computational paradigms. Spintronic devices offer intriguing avenues to improve digital circuits by leveraging non-volatility to reduce static power dissipation and vertical integration for increased density. Novel hybrid spintronic-CMOS digital circuits are developed herein that illustrate enhanced functionality at reduced static power consumption and area cost. The developed spin-CMOS D Flip-Flop offers improved power-gating strategies by achieving instant store/restore capabilities while using 10 fewer transistors than typical CMOS-only implementations. The spin-CMOS Muller C-Element developed herein improves asynchronous pipelines by reducing the area overhead while adding enhanced functionality such as instant data store/restore and delay-element-free bundled data asynchronous pipelines. Spintronic devices also provide improved scaling for neuromorphic circuits by enabling compact and low power neuron and non-volatile synapse implementations while enabling new neuromorphic paradigms leveraging the stochastic behavior of spintronic devices to realize stochastic spiking neurons, which are more akin to biological neurons and commensurate with theories from computational neuroscience and probabilistic learning rules. Spintronic-based Probabilistic Activation Function circuits are utilized herein to provide a compact and low-power neuron for Binarized Neural Networks. Two implementations of stochastic spiking neurons with alternative speed, power, and area benefits are realized. Finally, a comprehensive neuromorphic architecture comprising stochastic spiking neurons, low-precision synapses with Probabilistic Hebbian Plasticity, and a novel non-volatile homeostasis mechanism is realized for subthreshold ultra-low-power unsupervised learning with robustness to process variations. Along with several case studies, implications for future spintronic digital and neuromorphic circuits are presented

In-memory computing with emerging memory devices: Status and outlook

Supporting data for "In-memory computing with emerging memory devices: status and outlook", submitted to APL Machine Learning

Efficient Neuromorphic Computing Enabled by Spin-Transfer Torque: Devices, Circuits and Systems

Present day computers expend orders of magnitude more computational resources to perform various cognitive and perception related tasks that humans routinely perform everyday. This has recently resulted in a seismic shift in the field of computation where research efforts are being directed to develop a neurocomputer that attempts to mimic the human brain by nanoelectronic components and thereby harness its efficiency in recognition problems. Bridging the gap between neuroscience and nanoelectronics, this thesis demonstrates the encoding of biological neural and synaptic functionalities in the underlying physics of electron spin. Description of various spin-transfer torque mechanisms that can be potentially utilized for realizing neuro-mimetic device structures is provided. A cross-layer perspective extending from the device to the circuit and system level is presented to envision the design of an All-Spin neuromorphic processor enabled with on-chip learning functionalities. Device-circuit-algorithm co-simulation framework calibrated to experimental results suggest that such All-Spin neuromorphic systems can potentially achieve almost two orders of magnitude energy improvement in comparison to state-of-the-art CMOS implementations