Adaptive Finite Element Simulation of Fluid-Structure Interaction with Application to Heart-Valve Dynamics

The goal of this work is the development of concepts for the efficient numerical solution of fluid-structure interaction (FSI) problems with applications to heart-valve dynamics. The main motivation for further development in this field is an increasing demand from the medical community for scientifically rigorous investigations of cardiovascular diseases, which are responsible for the major fraction of mortalities in industrialized countries. In this work, the ALE (arbitrary Lagrangian Eulerian) description of fluid equations is utilized for the numerical modeling and simulation of fluid-structure interactions. Using this approach, the fluid equations can easily be coupled with structural deformations. The focal goal is the modeling, numerical analysis, and simulation of prototypical heart-valve dynamics, which requires the investigation of the following issues: the analysis of various fluid-mesh motion techniques, a comparison of different second-order time-stepping schemes, and the prescription of specific boundary conditions on the artificial outflow boundary. To control computational costs, we apply a simplified version of an a posteriori error estimation using the dual weighted residual (DWR) method. This method is used for mesh adaption during the computation. The last, novel aspect comprises a discussion of optimal control problems for wall stress minimization, in which the state is determined by a fluid-structure interaction system. The concepts developed in this work are demonstrated with several numerical tests in two and three dimensions. The programming code is validated by computing several FSI benchmark tests. The focal computation is related to a prototypical two-dimensional aortic heart-valve simulation. The concepts illustrated by this example were developed in cooperation with a cardiologist

Proceedings of the YIC 2021 - VI ECCOMAS Young Investigators Conference

The 6th ECCOMAS Young Investigators Conference YIC2021 will take place from July 7th through 9th, 2021 at Universitat Politècnica de València, Spain. The main objective is to bring together in a relaxed environment young students, researchers and professors from all areas related with computational science and engineering, as in the previous YIC conferences series organized under the auspices of the European Community on Computational Methods in Applied Sciences (ECCOMAS). Participation of senior scientists sharing their knowledge and experience is thus critical for this event.YIC 2021 is organized at Universitat Politécnica de València by the Sociedad Española de Métodos Numéricos en Ingeniería (SEMNI) and the Sociedad Española de Matemática Aplicada (SEMA). It is promoted by the ECCOMAS.The main goal of the YIC 2021 conference is to provide a forum for presenting and discussing the current state-of-the-art achievements on Computational Methods and Applied Sciences,including theoretical models, numerical methods, algorithmic strategies and challenging engineering applications.Nadal Soriano, E.; Rodrigo Cardiel, C.; Martínez Casas, J. (2022). Proceedings of the YIC 2021 - VI ECCOMAS Young Investigators Conference. Editorial Universitat Politècnica de València. https://doi.org/10.4995/YIC2021.2021.15320EDITORIA

Distributed Modeling Approach for Electrical and Thermal Analysis of High-Frequency Transistors

The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model is developed to investigate the thermal properties of different semiconductor substrates. Heat dissipation issues associated with some substrate materials, such as sapphire, silicon, and silicon carbide are identified, and thinning the substrates is proposed as a preliminary solution for addressing them. This leads to a comprehensive and universal approach to increase the heat dissipation capabilities of any substrate material and 2X-3X improvement is achieved according to this novel technique. Moreover, for analyzing the electrical behavior of these devices, a small-signal model is developed to examine the operation of transistors in the linear regions. This model is obtained based on an equivalent circuit which includes the distributed effects of the device at higher frequency bands. In other words, the wave propagation effects and phase velocity mismatches are considered when developing the model. The obtained results from the developed simulation tool are then compared with the measurements and excellent agreement is achieved between the two cases, which serves as the proof for validation. Additionally, this model is extended to predict and analyze the nonlinear behavior of these transistors and the developed tool is validated according to the obtained large-signal analysis results from measurement. Based on the developed modeling approach, a novel fabrication technique is also proposed which ensures the high-frequency operability of current devices with the available fabrication technologies, without forfeiting the gain and output power. The technical details regarding this approach and a sample configuration of the electrode model for the transistor based on the proposed design are also provided

Análisis y diseño de multiplicadores y mezcladores mediante el Método de Monte CArlo en la banda de THZ

[ES]La región del espectro electromagnético comprendida entre 100 GHz y 10 THz alberga una gran variedad de aplicaciones en campos tan dispares como la radioastronomía, espectroscopía molecular, medicina, seguridad, radar, etc. Los principales inconvenientes en el desarrollo de estas aplicaciones son los altos costes de producción de los sistemas trabajando a estas frecuencias, su costoso mantenimiento, gran volumen y baja fiabilidad. Entre las diferentes tecnologías a frecuencias de THz, la tecnología de los diodos Schottky juega un importante papel debido a su madurez y a la sencillez de estos dispositivos. Además, los diodos Schottky pueden operar tanto a temperatura ambiente como a temperaturas criogénicas, con altas eficiencias cuando se usan como multiplicadores y con moderadas temperaturas de ruido en mezcladores. El principal objetivo de esta tesis doctoral es analizar los fenómenos físicos responsables de las características eléctricas y del ruido en los diodos Schottky, así como analizar y diseñar circuitos multiplicadores y mezcladores en bandas milimétricas y submilimétricas. La primera parte de la tesis presenta un análisis de los fenómenos físicos que limitan el comportamiento de los diodos Schottky de GaAs y GaN y de las características del espectro de ruido de estos dispositivos. Para llevar a cabo este análisis, un modelo del diodo basado en la técnica de Monte Carlo se ha considerado como referencia debido a la elevada precisión y fiabilidad de este modelo. Además, el modelo de Monte Carlo permite calcular directamente el espectro de ruido de los diodos sin necesidad de utilizar ningún modelo analítico o empírico. Se han analizado fenómenos físicos como saturación de la velocidad, inercia de los portadores, dependencia de la movilidad electrónica con la longitud de la epicapa, resonancias del plasma y efectos no locales y no estacionarios. También se ha presentado un completo análisis del espectro de ruido para diodos Schottky de GaAs y GaN operando tanto en condiciones estáticas como variables con el tiempo. Los resultados obtenidos en esta parte de la tesis contribuyen a mejorar la comprensión de la respuesta eléctrica y del ruido de los diodos Schottky en condiciones de altas frecuencias y/o altos campos eléctricos. También, estos resultados han ayudado a determinar las limitaciones de modelos numéricos y analíticos usados en el análisis de la respuesta eléctrica y del ruido electrónico en los diodos Schottky. La segunda parte de la tesis está dedicada al análisis de multiplicadores y mezcladores mediante una herramienta de simulación de circuitos basada en la técnica de balance armónico. Diferentes modelos basados en circuitos equivalentes del dispositivo, en las ecuaciones de arrastre-difusión y en la técnica de Monte Carlo se han considerado en este análisis. El modelo de Monte Carlo acoplado a la técnica de balance armónico se ha usado como referencia para evaluar las limitaciones y el rango de validez de modelos basados en circuitos equivalentes y en las ecuaciones de arrastre-difusión para el diseño de circuitos multiplicadores y mezcladores. Una notable característica de esta herramienta de simulación es que permite diseñar circuitos Schottky teniendo en cuenta tanto la respuesta eléctrica como el ruido generado en los dispositivos. Los resultados de las simulaciones presentados en esta parte de la tesis, tanto para multiplicadores como mezcladores, se han comparado con resultados experimentales publicados en la literatura. El simulador que integra el modelo de Monte Carlo con la técnica de balance armónico permite analizar y diseñar circuitos a frecuencias superiores a 1 THz.[EN]The terahertz region of the electromagnetic spectrum (100 GHz-10 THz) presents a wide range of applications such as radio-astronomy, molecular spectroscopy, medicine, security and radar, among others. The main obstacles for the development of these applications are the high production cost of the systems working at these frequencies, high maintenance, high volume and low reliability. Among the different THz technologies, Schottky technology plays an important rule due to its maturity and the inherent simplicity of these devices. Besides, Schottky diodes can operate at both room and cryogenic temperatures, with high efficiency in multipliers and moderate noise temperature in mixers. This PhD. thesis is mainly concerned with the analysis of the physical processes responsible for the characteristics of the electrical response and noise of Schottky diodes, as well as the analysis and design of frequency multipliers and mixers at millimeter and submillimeter wavelengths. The first part of the thesis deals with the analysis of the physical phenomena limiting the electrical performance of GaAs and GaN Schottky diodes and their noise performance. To carry out this analysis, a Monte Carlo model of the diode has been used as a reference due to the high accuracy and reliability of this diode model at millimeter and submillimter wavelengths. Besides, the Monte Carlo model provides a direct description of the noise spectra of the devices without the necessity of any additional analytical or empirical model. Physical phenomena like velocity saturation, carrier inertia, dependence of the electron mobility on the epilayer length, plasma resonance and nonlocal effects in time and space have been analysed. Also, a complete analysis of the current noise spectra of GaAs and GaN Schottky diodes operating under static and time varying conditions is presented in this part of the thesis. The obtained results provide a better understanding of the electrical and the noise responses of Schottky diodes under high frequency and/or high electric field conditions. Also these results have helped to determine the limitations of numerical and analytical models used in the analysis of the electrical and the noise responses of these devices. The second part of the thesis is devoted to the analysis of frequency multipliers and mixers by means of an in-house circuit simulation tool based on the harmonic balance technique. Different lumped equivalent circuits, drift-diffusion and Monte Carlo models have been considered in this analysis. The Monte Carlo model coupled to the harmonic balance technique has been used as a reference to evaluate the limitations and range of validity of lumped equivalent circuit and driftdiffusion models for the design of frequency multipliers and mixers. A remarkable feature of this reference simulation tool is that it enables the design of Schottky circuits from both electrical and noise considerations. The simulation results presented in this part of the thesis for both multipliers and mixers have been compared with measured results available in the literature. In addition, the Monte Carlo simulation tool allows the analysis and design of circuits above 1 THz

State Of the Art Report in the fields of numerical analysis and scientific computing. Final version as of 16/02/2020 deliverable D4.1 of the HORIZON 2020 project EURAD.: European Joint Programme on Radioactive Waste Management

Document information Project Acronym EURAD Project Title European Joint Programme on Radioactive Waste Management Project Type European Joint Programme (EJP) EC grant agreement No. 847593 Project starting / end date 1 st June 2019-30 May 2024 Work Package No. 4 Work Package Title Development and Improvement Of NUmerical methods and Tools for modelling coupled processes Work Package Acronym DONUT Deliverable No. 4.

Tracing back the source of contamination

From the time a contaminant is detected in an observation well, the question of where and when the contaminant was introduced in the aquifer needs an answer. Many techniques have been proposed to answer this question, but virtually all of them assume that the aquifer and its dynamics are perfectly known. This work discusses a new approach for the simultaneous identification of the contaminant source location and the spatial variability of hydraulic conductivity in an aquifer which has been validated on synthetic and laboratory experiments and which is in the process of being validated on a real aquifer

Simulation of Heterojunction Bipolar Transistors in Two Dimensions

This work describes the formulation and, development of a two-- dimensional drift-diffusion simulation program for accurate modeling of heterojunction bipolar transistors (HBT\u27s). The model described is a versatile tool for studying HBT\u27s, allowing the user to determine the terminal characteristics and physical operation of devices. Nonplanar structures can be treated, response to transient conditions can be computed, and the high frequency characteristics of transistors may be projected. The formulation of an electron energy balance equation is presented and included in the model in an attempt to more accurately compute high-field transport characteristics. The model is applied to some common design questions and experimental results are reproduced

Isogeometric finite element methods for liquid metal magnetohydrodynamics

A fusion blanket is a key component in a fusion reactor which extracts heat energy, protects the surrounding structure and possibly produces tritium, one of the fuels required for the deuterium-tritium fusion reaction. Interest in magneto-hydrodynamic (MHD) effects in the fusion blanket has been growing due to the promising prospect of a liquid breeder blanket, due to its high power density and the possibility of sustainable production of tritium. However, MHD effects can significantly influence the operating performance of the fusion blanket and an accurate and reliable analysis of the MHD effects are critical in its design. Significant progress in the numerical study of MHD has been made recently, due in large part to the advancement in computing power. However, its maturity has not yet reached a point comparable with standard CFD solvers. In particular, complex domains and complex externally applied magnetic fields present additional challenges for numerical schemes in MHD. For that reason, the application of isogeometric analysis is considered in this thesis. Isogeometric Analysis (IGA) is a new class of numerical method which integrates Computer Aided Design (CAD) into Finite Element Analysis (FEA). In IGA, B-splines and NURBS, which are the building blocks used to construct a geometry in CAD, are also used to build the finite element spaces. This allows to represent geometries more accurately, and in some cases exactly. This may help advance the progress of numerical studies of MHD effects, not only in fusion blanket scenarios, but more widely. In this thesis, we develop and study a number of types of IGA based MHD solver; a fully-developed MHD flow solver, a steady-state MHD solver and a time-dependent MHD solver. These solvers are validated using analytical methods and methods of manufactured solution and are compared with other numerical schemes on a number of benchmark problems.Open Acces