341 research outputs found

    Merged Two-Stage Power Converter With Soft Charging Switched-Capacitor Stage in 180 nm CMOS

    Get PDF
    In this paper, we introduce a merged two-stage dc-dc power converter for low-voltage power delivery. By separating the transformation and regulation function of a dc-dc power converter into two stages, both large voltage transformation and high switching frequency can be achieved. We show how the switched-capacitor stage can operate under soft charging conditions by suitable control and integration (merging) of the two stages. This mode of operation enables improved efficiency and/or power density in the switched-capacitor stage. A 5-to-1 V, 0.8 W integrated dc-dc converter has been developed in 180 nm CMOS. The converter achieves a peak efficiency of 81%, with a regulation stage switching frequency of 10 MHz.Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation

    Architectures and circuits for low-voltage energy conversion and applications in renewable energy and power management

    Get PDF
    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 337-343).In this thesis we seek to develop smaller, less expensive, and more efficient power electronics. We also investigate emerging applications where the proper implementation of these new types of power converters can have a significant impact on the overall system performance. We have developed a new two-stage dc-dc converter architecture suitable for low-voltage CMOS power delivery. The architecture, which combines the benefits of switched-capacitor and inductor-based converters, achieves both large voltage step-down and high switching frequency, while maintaining good efficiency. We explore the benefits of a new soft-charging technique that drastically reduces the major loss mechanism in switched-capacitor converters, and we show experimental results from a 5-to-1 V, 0.8 W integrated dc-dc converter developed in 180 nm CMOS technology. The use of power electronics to increase system performance in a portable thermophotovoltaic power generator is also investigated in this thesis. We show that mechanical non-idealities in a MEMS fabricated energy conversion device can be mitigated with the help of low-voltage distributed maximum power point tracking (MPPT) dc-dc converters. As part of this work, we explore low power control and sensing architectures, and present experimental results of a 300 mW integrated MPPT developed in 0.35 um CMOS with all power, sensing and control circuitry on chip. The final piece of this thesis investigates the implementation of distributed power electronics in solar photovoltaic applications. We explore the benefits of small, intelligent power converters integrated directly into the solar panel junction box to enhance overall energy capture in real-world scenarios. To this end, we developed a low-cost, high efficiency (>98%) power converter that enables intelligent control and energy conversion at the sub-panel level. Experimental field measurements show that the solution can provide up to a 35% increase in panel output power during partial shading conditions compared to current state-of-the-art solutions.by Robert C. N. Pilawa-Podgurski.Ph.D

    Design of PVT Tolerant Inverter Based Circuits for Low Supply Voltages

    Get PDF
    University of Minnesota Ph.D. dissertation. June 2015. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xiv, 187 pages.Rapid advances in the field of integrated circuit design has been advantageous from the point of view of cost and miniaturization. Although technology scaling is advantageous to digital circuits in terms of increased speed and lower power, analog circuits strongly suffer from this trend. This is becoming a crucial bottle neck in the realization of a system on chip in scaled technology merging high-density digital parts, with high performance analog interfaces. This is because scaled technologies reduce the output impedance (gain) and supply voltage which limits the dynamic range (output swing). One way to mitigate the power supply restrictions is to move to current mode circuit circuit design rather than voltage mode designs. This thesis focuses on designing Process Voltage and Temperature (PVT) tolerant base band circuits at lower supply voltages and in lower technologies. Inverter amplifiers are known to have better transconductance efficiency, better noise and linearity performance. But inverters are prone to PVT variations and has poor CMRR and PSRR. To circumvent the problem, we have proposed various biasing schemes for inverter like semi constant current biasing, constant current biasing and constant gm biasing. Each biasing technique has its own advantages, like semi constant current biasing allows to select different PMOS and NMOS current. This feature allows for higher inherent inverter linearity. Similarly constant current and constant gm biasing allows for reduced PVT sensitivity. The inverter based OTA achieves a measured THD of -90.6 dB, SNR of 78.7 dB, CMRR 97dB, PSRR 61 dB wile operating from a nominal power of 0.9V and at output swing of 0.9V{pp,diff} in TSMC 40nm general purpose process. Further the measured third harmonic distortion varies approximately by 11.5dB with 120C variation in temperature and 9dB with a 18% variation in supply voltage. The linearity can be increased by increasing the loop gain and bandwidth in a negative feedback circuit or by increasing the over drive voltage in open loop architectures. However both these techniques increases the noise contribution of the circuit. There exist a trade off between noise and linearity in analog circuits. To circumvent this problem, we have introduced nonlinear cancellation techniques and noise filtering techniques. An analog-to-digital converter (ADC) driver which is capable of amplifying the continuous time signal with a gain of 8 and sample onto the input capacitor(1pF) of 1 10 bit successive approximation register (SAR) ADC is designed in TSMC 65nm general purpose process. This exploits the non linearity cancellation in current mirror and also allows for higher bandwidth operation by decoupling closed loop gain from the negative feedback loop. The noise from the out of band is filtered before sampling leading to low noise operation. The measured design operates at 100MS/s and has an OIP_3 of 40dBm at the nyquist rate, noise power spectral density of 17nV/sqrt{Hz} and inter modulation distortion of 65dB. The intermodulation distortion variation across 10 chips is 6dB and 4dB across a temperature variation of 120C. Non linearity cancellation is exploited in designing two filters, an anti alias filter and a continuously tunable channel select filter. Traditional active RC filters are based on cascade of integrators. These create multiple low impedance nodes in the circuit which results in a higher noise. We propose a real low pass filter based filter architecture rather than traditional integrator based approach. Further the entire filtering operation takes place in current domain to circumvent the power supply limitations. This also facilitates the use of tunable non linear metal oxide semiconductor capacitor (MOSCAP) as filter capacitors. We introduce techniques of self compensation to use the filter resistor and capacitor as compensation capacitor for lower power. The anti alias filter designed for 50MHz bandwidth is fabricated in IBM 65nm process achieves an IIP3 of 33dBm, while consuming 1.56mW from 1.2 V supply. The channel select filter is tunable from 34MHz to 314MHz and is fabricated in TSMC 65nm general purpose process. This filter achieves an OIP3 of 25.24 dBm at the maximum frequency while drawing 4.2mA from 1.1V supply. The measured intermodulation distortion varies by 5dB across 120C variation in temperature and 6.5dB across a 200mV variation in power supply. Further this filter presents a high impedance node at the input and a low impedance node at the output easing system integration. SAR ADCs are becoming popular at lower technologies as they are based on device switching rather than amplifying circuits. But recent SAR ADCs that have good energy efficiency have had relatively large input capacitance increasing the driver power. We present a 2X time interleaved (TI) SAR ADC which has the lowest input capacitance of 133fF in literature. The sampling capacitor is separated from the capacitive digital to analog converter (DAC) array by performing the input and DAC reference subtraction in the current domain rather than as done traditionally in charge domain. The proposed ADC is fabricated in TSMC's 65nm general purpose process and occupies an area of 0.0338 mm^2. The measured ADC spurious free dynamic range (SFDR) is 57dB and the measured effective number of bits (ENOB) at nyquist rate is 7.55 bit while using 1.55mW power from 1 V supply. A sub 1V reference circuit is proposed, that exploits the complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) voltages in the beta multiplier circuit to attain a stable voltage with temperature and power supply. A one-time calibration is integrated in the architecture to get a good performance over process. Chopper stabilization is employed to reduce the flicker noise of the reference circuit. The prototype was simulated in TSMC 65nm process and we obtain the nominal output of 236mW, while consuming 0.7mW from power supply. Simulations show a temperature coefficient of 18 ppmC from -40 to 100C and with a power supply ranging from 0.8 to 2V

    Hybrid monolithic integration of high-power DC-DC converters in a high-voltage technology

    Get PDF
    The supply of electrical energy to home, commercial, and industrial users has become ubiquitous, and it is hard to imagine a world without the facilities provided by electrical energy. Despite the ever increasing efficiency of nearly every electrical application, the worldwide demand for electrical power continues to increase, since the number of users and applications more than compensates for these technological improvements. In order to maintain the affordability and feasibility of the total production, it is essential for the distribution of the produced electrical energy to be as efficient as possible. In other words the loss in the power distribution is to be minimized. By transporting electrical energy at the maximum safe voltage, the current in the conductors, and the associated conduction loss can remain as low as possible. In order to optimize the total efficiency, the high transportation voltage needs to be converted to the appropriate lower voltage as close as possible to the end user. Obviously, this conversion also needs to be as efficient, affordable, and compact as possible. Because of the ever increasing integration of electronic systems, where more and more functionality is combined in monolithically integrated circuits, the cost, the power consumption, and the size of these electronic systems can be greatly reduced. This thorough integration is not limited to the electronic systems that are the end users of the electrical energy, but can also be applied to the power conversion itself. In most modern applications, the voltage conversion is implemented as a switching DC-DC converter, in which electrical energy is temporarily stored in reactive elements, i.e. inductors or capacitors. High switching speeds are used to allow for a compact and efficient implementation. For low power levels, typically below 1 Watt, it is possible to monolithically implement the voltage conversion on an integrated circuit. In some cases, this is even done on the same integrated circuit that is the end user of the electrical energy to minimize the system dimensions. For higher power levels, it is no longer feasible to achieve the desired efficiency with monolithically integrated components, and some external components prove indispensable. Usually, the reactive components are the main limiting factor, and are the first components to be moved away from the integrated circuit for increasing power levels. The semiconductor components, including the power transistors, remain part of the integrated circuit. Using this hybrid approach, it is possible in modern converterapplications to process around 60 Watt, albeit limited to voltages of a few Volt. For hybrid integrated converters with an output voltage of tens of Volt, the power is limited to approximately 10 Watt. For even higher power levels, the integrated power transistors also become a limiting factor, and are replaced with discrete power devices. In these discrete converters, greatly increased power levels become possible, although the system size rapidly increases. In this work, the limits of the hybrid approach are explored when using so-called smart-power technologies. Smart-power technologies are standard lowcost submicron CMOS technologies that are complemented with a number of integrated high-voltage devices. By using an appropriate combination of smart-power technologies and circuit topologies, it is possible to improve on the current state-of-the-art converters, by optimizing the size, the cost, and the efficiency. To determine the limits of smart-power DC-DC converters, we first discuss the major contributing factors for an efficient energy distribution, and take a look at the role of voltage conversion in the energy distribution. Considering the limitations of the technologies and the potential application areas, we define two test-cases in the telecommunications sector for which we want to optimize the hybrid monolithic integration in a smart-power technology. Subsequently, we explore the specifications of an ideal converter, and the relevant properties of the affordable smart-power technologies for the implementation of DC-DC converters. Taking into account the limitations of these technologies, we define a cost function that allows to systematically evaluate the different potential converter topologies, without having to perform a full design cycle for each topology. From this cost function, we notice that the de facto default topology selection in discrete converters, which is typically based on output power, is not optimal for converters with integrated power transistors. Based on the cost function and the boundary conditions of our test-cases, we determine the optimal topology for a smart-power implementation of these applications. Then, we take another step towards the real world and evaluate the influence of parasitic elements in a smart-power implementation of switching converters. It is noticed that the voltage overshoot caused by the transformer secondary side leakage inductance is a major roadblock for an efficient implementation. Since the usual approach to this voltage overshoot in discrete converters is not applicable in smart-power converters due to technological limitations, an alternative approach is shown and implemented. The energy from the voltage overshoot is absorbed and transferred to the output of the converter. This allows for a significant reduction in the voltage overshoot, while maintaining a high efficiency, leading to an efficient, compact, and low-cost implementation. The effectiveness of this approach was tested and demonstrated in both a version using a commercially available integrated circuit, and our own implementation in a smart-power integrated circuit. Finally, we also take a look at the optimization of switching converters over the load range by exploiting the capabilities of highly integrated converters. Although the maximum output power remains one of the defining characteristics of converters, it has been shown that most converters spend a majority of their lifetime delivering significantly lower output power. Therefore, it is also desirable to optimize the efficiency of the converter at reduced output current and output power. By splitting the power transistors in multiple independent segments, which are turned on or off in function of the current, the efficiency at low currents can be significantly improved, without introducing undesirable frequency components in the output voltage, and without harming the efficiency at higher currents. These properties allow a near universal application of the optimization technique in hybrid monolithic DC-DC converter applications, without significant impact on the complexity and the cost of the system. This approach for the optimization of switching converters over the load range was demonstrated using a boost converter with discrete power transistors. The demonstration of our smart-power implementation was limited to simulations due to an issue with a digital control block. On a finishing note, we formulate the general conclusions and provide an outlook on potential future work based on this research

    Hybrid NRZ/Multi-Tone Signaling for High-Speed Low-Power Wireline Transceivers

    Get PDF
    Over the past few decades, incessant growth of Internet networking traffic and High-Performance Computing (HPC) has led to a tremendous demand for data bandwidth. Digital communication technologies combined with advanced integrated circuit scaling trends have enabled the semiconductor and microelectronic industry to dramatically scale the bandwidth of high-loss interfaces such as Ethernet, backplane, and Digital Subscriber Line (DSL). The key to achieving higher bandwidth is to employ equalization technique to compensate the channel impairments such as Inter-Symbol Interference (ISI), crosstalk, and environmental noise. Therefore, todayâs advanced input/outputs (I/Os) has been equipped with sophisticated equalization techniques to push beyond the uncompensated bandwidth of the system. To this end, process scaling has continually increased the data processing capability and improved the I/O performance over the last 15 years. However, since the channel bandwidth has not scaled with the same pace, the required signal processing and equalization circuitry becomes more and more complicated. Thereby, the energy efficiency improvements are largely offset by the energy needed to compensate channel impairments. In this design paradigm, re-thinking about the design strategies in order to not only satisfy the bandwidth performance, but also to improve power-performance becomes an important necessity. It is well known in communication theory that coding and signaling schemes have the potential to provide superior performance over band-limited channels. However, the choice of the optimum data communication algorithm should be considered by accounting for the circuit level power-performance trade-offs. In this thesis we have investigated the application of new algorithm and signaling schemes in wireline communications, especially for communication between microprocessors, memories, and peripherals. A new hybrid NRZ/Multi-Tone (NRZ/MT) signaling method has been developed during the course of this research. The system-level and circuit-level analysis, design, and implementation of the proposed signaling method has been performed in the frame of this work, and the silicon measurement results have proved the efficiency and the robustness of the proposed signaling methodology for wireline interfaces. In the first part of this work, a 7.5 Gb/s hybrid NRZ/MT transceiver (TRX) for multi-drop bus (MDB) memory interfaces is designed and fabricated in 40 nm CMOS technology. Reducing the complexity of the equalization circuitry on the receiver (RX) side, the proposed architecture achieves 1 pJ/bit link efficiency for a MDB channel bearing 45 dB loss at 2.5 GHz. The measurement results of the first prototype confirm that NRZ/MT serial data TRX can offer an energy-efficient solution for MDB memory interfaces. Motivated by the satisfying results of the first prototype, in the second phase of this research we have exploited the properties of multi-tone signaling, especially orthogonality among different sub-bands, to reduce the effect of crosstalk in high-dense wireline interconnects. A four-channel transceiver has been implemented in a standard CMOS 40 nm technology in order to demonstrate the performance of NRZ/MT signaling in presence of high channel loss and strong crosstalk noise. The proposed system achieves 1 pJ/bit power efficiency, while communicating over a MDB memory channel at 36 Gb/s aggregate data rate

    Integrated Electronics for Wireless Imaging Microsystems with CMUT Arrays

    Get PDF
    Integration of transducer arrays with interface electronics in the form of single-chip CMUT-on-CMOS has emerged into the field of medical ultrasound imaging and is transforming this field. It has already been used in several commercial products such as handheld full-body imagers and it is being implemented by commercial and academic groups for Intravascular Ultrasound and Intracardiac Echocardiography. However, large attenuation of ultrasonic waves transmitted through the skull has prevented ultrasound imaging of the brain. This research is a prime step toward implantable wireless microsystems that use ultrasound to image the brain by bypassing the skull. These microsystems offer autonomous scanning (beam steering and focusing) of the brain and transferring data out of the brain for further processing and image reconstruction. The objective of the presented research is to develop building blocks of an integrated electronics architecture for CMUT based wireless ultrasound imaging systems while providing a fundamental study on interfacing CMUT arrays with their associated integrated electronics in terms of electrical power transfer and acoustic reflection which would potentially lead to more efficient and high-performance systems. A fully wireless architecture for ultrasound imaging is demonstrated for the first time. An on-chip programmable transmit (TX) beamformer enables phased array focusing and steering of ultrasound waves in the transmit mode while its on-chip bandpass noise shaping digitizer followed by an ultra-wideband (UWB) uplink transmitter minimizes the effect of path loss on the transmitted image data out of the brain. A single-chip application-specific integrated circuit (ASIC) is de- signed to realize the wireless architecture and interface with array elements, each of which includes a transceiver (TRX) front-end with a high-voltage (HV) pulser, a high-voltage T/R switch, and a low-noise amplifier (LNA). Novel design techniques are implemented in the system to enhance the performance of its building blocks. Apart from imaging capability, the implantable wireless microsystems can include a pressure sensing readout to measure intracranial pressure. To do so, a power-efficient readout for pressure sensing is presented. It uses pseudo-pseudo differential readout topology to cut down the static power consumption of the sensor for further power savings in wireless microsystems. In addition, the effect of matching and electrical termination on CMUT array elements is explored leading to new interface structures to improve bandwidth and sensitivity of CMUT arrays in different operation regions. Comprehensive analysis, modeling, and simulation methodologies are presented for further investigation.Ph.D

    Ultra Low Power Analog Circuits for Wireless Sensor Node System.

    Full text link
    This thesis will discuss essential analog circuit blocks required in ultra-low power wireless sensor node systems. A wireless sensor network system requires very high energy and power efficiency which is difficult to achieve with traditional analog circuits. First, 5.58nW real time clock using a DLL (Delay Locked Loop)-assisted pulse-driven crystal oscillator is discussed. In this circuit, the operational amplifier used in the traditional circuit was replaced with pulsed drivers. The pulse was generated at precise timing by a DLL. The circuit parts operate in different supply levels, generated on chip by using a switched capacitor network. The circuit was tested at different supply voltage and temperature. Its frequency characteristic along with power consumption were measured and compared to the traditional circuit. Next, a Schmitt trigger based pulse-driven crystal oscillator is discussed. In the first chapter, a DLL was used to generate a pulse with precise timing. However, testing results and recent study showed that the crystal oscillator can sustain oscillation even with inaccurate pulse timing. In this chapter, pulse location is determined by the Schmitt trigger. Simulation results show that this structure can still sustain oscillation at different process corners and temperature. In the next chapter, a sub-nW 8 bit SAR ADC (Successive Approximation Analog-to-Digital Converter) using transistor-stack DAC (Digital-to-Analog Converter) is discussed. To facilitate design effort and reduce the layout dependent effect, a conventional capacitive DAC was replaced with transistor-stack DAC with a 255:1 multiplexer. The control logic was designed with both TSPC (True Single Phase Clock) and CMOS logic to minimize transistor count. The ADC was implemented in a 65nm CMOS process and tested at different sampling rates and input signal frequency. Its linearity and power consumption was measured. Also, a similar design was implemented and tested using 180nm CMOS process as part of a sensor node system. Lastly, a multiple output level voltage regulator using a switched capacitor network for low-cost system is discussed.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/111626/1/dmyoon_1.pd

    Toward realizing power scalable and energy proportional high-speed wireline links

    Get PDF
    Growing computational demand and proliferation of cloud computing has placed high-speed serial links at the center stage. Due to saturating energy efficiency improvements over the last five years, increasing the data throughput comes at the cost of power consumption. Conventionally, serial link power can be reduced by optimizing individual building blocks such as output drivers, receiver, or clock generation and distribution. However, this approach yields very limited efficiency improvement. This dissertation takes an alternative approach toward reducing the serial link power. Instead of optimizing the power of individual building blocks, power of the entire serial link is reduced by exploiting serial link usage by the applications. It has been demonstrated that serial links in servers are underutilized. On average, they are used only 15% of the time, i.e. these links are idle for approximately 85% of the time. Conventional links consume power during idle periods to maintain synchronization between the transmitter and the receiver. However, by powering-off the link when idle and powering it back when needed, power consumption of the serial link can be scaled proportionally to its utilization. This approach of rapid power state transitioning is known as the rapid-on/off approach. For the rapid-on/off to be effective, ideally the power-on time, off-state power, and power state transition energy must all be close to zero. However, in practice, it is very difficult to achieve these ideal conditions. Work presented in this dissertation addresses these challenges. When this research work was started (2011-12), there were only a couple of research papers available in the area of rapid-on/off links. Systematic study or design of a rapid power state transitioning in serial links was not available in the literature. Since rapid-on/off with nanoseconds granularity is not a standard in any wireline communication, even the popular test equipment does not support testing any such feature, neither any formal measurement methodology was available. All these circumstances made the beginning difficult. However, these challenges provided a unique opportunity to explore new architectural techniques and identify trade-offs. The key contributions of this dissertation are as follows. The first and foremost contribution is understanding the underlying limitations of saturating energy efficiency improvements in serial links and why there is a compelling need to find alternative ways to reduce the serial link power. The second contribution is to identify potential power saving techniques and evaluate the challenges they pose and the opportunities they present. The third contribution is the design of a 5Gb/s transmitter with a rapid-on/off feature. The transmitter achieves rapid-on/off capability in voltage mode output driver by using a fast-digital regulator, and in the clock multiplier by accurate frequency pre-setting and periodic reference insertion. To ease timing requirements, an improved edge replacement logic circuit for the clock multiplier is proposed. Mathematical modeling of power-on time as a function of various circuit parameters is also discussed. The proposed transmitter demonstrates energy proportional operation over wide variations of link utilization, and is, therefore, suitable for energy efficient links. Fabricated in 90nm CMOS technology, the voltage mode driver, and the clock multiplier achieve power-on-time of only 2ns and 10ns, respectively. This dissertation highlights key trade-off in the clock multiplier architecture, to achieve fast power-on-lock capability at the cost of jitter performance. The fourth contribution is the design of a 7GHz rapid-on/off LC-PLL based clock multi- plier. The phase locked loop (PLL) based multiplier was developed to overcome the limita- tions of the MDLL based approach. Proposed temperature compensated LC-PLL achieves power-on-lock in 1ns. The fifth and biggest contribution of this dissertation is the design of a 7Gb/s embedded clock transceiver, which achieves rapid-on/off capability in LC-PLL, current-mode transmit- ter and receiver. It was the first reported design of a complete transceiver, with an embedded clock architecture, having rapid-on/off capability. Background phase calibration technique in PLL and CDR phase calibration logic in the receiver enable instantaneous lock on power-on. The proposed transceiver demonstrates power scalability with a wide range of link utiliza- tion and, therefore, helps in improving overall system efficiency. Fabricated in 65nm CMOS technology, the 7Gb/s transceiver achieves power-on-lock in less than 20ns. The transceiver achieves power scaling by 44x (63.7mW-to-1.43mW) and energy efficiency degradation by only 2.2x (9.1pJ/bit-to-20.5pJ/bit), when the effective data rate (link utilization) changes by 100x (7Gb/s-to-70Mb/s). The sixth and final contribution is the design of a temperature sensor to compensate the frequency drifts due to temperature variations, during long power-off periods, in the fast power-on-lock LC-PLL. The proposed self-referenced VCO-based temperature sensor is designed with all digital logic gates and achieves low supply sensitivity. This sensor is suitable for integration in processor and DRAM environments. The proposed sensor works on the principle of directly converting temperature information to frequency and finally to digital bits. A novel sensing technique is proposed in which temperature information is acquired by creating a threshold voltage difference between the transistors used in the oscillators. Reduced supply sensitivity is achieved by employing junction capacitance, and the overhead of voltage regulators and an external ideal reference frequency is avoided. The effect of VCO phase noise on the sensor resolution is mathematically evaluated. Fabricated in the 65nm CMOS process, the prototype can operate with a supply ranging from 0.85V to 1.1V, and it achieves a supply sensitivity of 0.034oC/mV and an inaccuracy of ±0.9oC and ±2.3oC from 0-100oC after 2-point calibration, with and without static nonlinearity correction, respectively. It achieves a resolution of 0.3oC, resolution FoM of 0.3(nJ/conv)res2 , and measurement (conversion) time of 6.5μs
    • …
    corecore