DESIGN OF MULTI-VALUED LOGIC CELLS USING SINGLE-ELECTRON DEVICES

This thesis proposes a new single-electron tunneling based NDC block and develops an analytical model which can be used for related circuit designs and/or their performance optimization. A piece-wise model is used to describe the I-V characteristics of the proposed NDC block. Four applications based on this NDC block are proposed: (1) Multiple-valued logic static memory cell (2) Schmitt trigger (3) Three-stage ring oscillator (4) ternary full adder using hybrid single-electron transistor and MOS technology. Simulation was done using Cadence Spectre simulator with 180nnm CMOS model and SET MIB macro mode to estimate the performance

Ultra-Low Power Ternary CMOS Platform for Physical Synthesis of Multi-Valued Logic and Memory Applications

Department of Electrical EngineeringMotivation of this work is to provide feasible, scalable, and designable multi-valued logic (MVL) device platform for physical synthesis of MVL circuits. Especially, ternary device and its general logic functions are focused, owing to most efficiently reduced circuit complexity per radix (R) increase. By designing the OFF-state constant current, not only the standby power (PS) issue of additional intermediate state is overcome, but also continuous supply voltage (VDD) scaling and dynamic power (PD) scaling are possible owing to single-step I-V characteristics. By applying a novel ternary device concept to CMOS technology with OFF-state current mechanism of band-to-band tunneling (BTBT) currents (IBTBT) and subthreshold diffusion current (Isub), the logic changes from binary to ternary are confirmed using mixed-mode device simulation. I experimentally demonstrate ternary CMOS (T-CMOS) and verified its low-power standard ternary inverter (STI) operation by designing channel profiles in conventional binary CMOS. The realized complementary ternary n/pMOS (T-n/pMOS) have fully gate bias (VG)-independent and symmetrical IBTBT of ~10 pA/???m based on proven ion-implantation process, which produces stable and designable intermediate state (VOM) at exactly VDD/2. To present T-CMOS design frameworks in terms of static noise margin (SNM) enhancement and ultra-low power operation, I develop the compact model of T-CMOS and verify the physical model parameters with experimental data. Through the feasible design of Isub with abrupt channel profile based on low thermal budget process, STI has a SNM of 283 mV (80 % of ideal SNM) at VDD= 1V operation and intermediate state stability of ??VOM < ?? 0.1V, even considering the random-dopant fluctuation (RDF) of 32 nm and 22 nm technology. Continuous VDD scaling below 0.5V (SNM= 40% at VDD = 0.3V) enables STI operation with ultra-low PD and PS based on exponentially reduced IBTBT currents. As MVL and memory (MVM) applications, minimum(MIN)/maximum(MAX) gates, analog-to-digital converter (ADC) circuit, and 5-state latch are studied with T-CMOS compact model. Especially ADC circuits revolutionary decreases number of device and circuit interconnection with 9.6% area of binary system.ope

Tunnel Junction-Embedded Field-Effect Transistor for Negative Differential Resistance and Its Multi-Valued Logic and Memory Applications

Device PhysicsI propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn tunnel diode with transistor. The embedded transistors suppress the valley current with transistor off-leakage current level. With various configurations of pn diode and transistor, single or multiple NDR characteristics obtained and each operation principle is explained clearly. Each composed device is analyzed in detail and NDR characteristics are examined device design parameters. In the single NDR case, operation voltage is below 0.5V, which is good at power density. In the multiple NDR case, band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and second peak and valley are generated from the suppression of diode current by off-state transistor. For the digital applications, introduced tri-state voltage transfer circuit makes NDR device take single input operation. Moreover, by using complementary multiple NDR devices, 5-state memory is demonstrated only with four transistors.ope

A Low Power Multiple Valued Logic SRAM Cell Using Single Electron Devices

It is widely known that the decreasing feature size facilitated vast improvement in semiconductor-based design. The scaling down of MOS transistors has almost come to an end due to the limits dictated by their operating principle. In order to ensure further feature size reduction, the field of single-electronics has been developed. Single Electron Tunnelling (SET) technology offers the ability to control the transport and position of a single or a small number of electrons. This thesis investigates the power optimization of single electron memory based on negative differential conductance (NDC) characteristic. A novel SET-based NDC architecture with multiple peaks in I-V characteristic is introduced. Two specific static random-access memory (SRAM) cells are proposed: (i) a ternary SRAM with a standby power consumption of 0.98nW at logic margin of 270mV and (ii) a quaternary SRAM cell with standby power consumption of 5.06 at a logic margin of 160 mV operating at T=77K.. The read/write operations for the memory cell are briefly discussed. All simulations are conducted using the Monte Carlo method from SIMON tools

Design of Discrete-time Chaos-Based Systems for Hardware Security Applications

Security of systems has become a major concern with the advent of technology. Researchers are proposing new security solutions every day in order to meet the area, power and performance specifications of the systems. The additional circuit required for security purposes can consume significant area and power. This work proposes a solution which utilizes discrete-time chaos-based logic gates to build a system which addresses multiple hardware security issues. The nonlinear dynamics of chaotic maps is leveraged to build a system that mitigates IC counterfeiting, IP piracy, overbuilding, disables hardware Trojan insertion and enables authentication of connecting devices (such as IoT and mobile). Chaos-based systems are also used to generate pseudo-random numbers for cryptographic applications.The chaotic map is the building block for the design of discrete-time chaos-based oscillator. The analog output of the oscillator is converted to digital value using a comparator in order to build logic gates. The logic gate is reconfigurable since different parameters in the circuit topology can be altered to implement multiple Boolean functions using the same system. The tuning parameters are control input, bifurcation parameter, iteration number and threshold voltage of the comparator. The proposed system is a hybrid between standard CMOS logic gates and reconfigurable chaos-based logic gates where original gates are replaced by chaos-based gates. The system works in two modes: logic locking and authentication. In logic locking mode, the goal is to ensure that the system achieves logic obfuscation in order to mitigate IC counterfeiting. The secret key for logic locking is made up of the tuning parameters of the chaotic oscillator. Each gate has 10-bit key which ensures that the key space is large which exponentially increases the computational complexity of any attack. In authentication mode, the aim of the system is to provide authentication of devices so that adversaries cannot connect to devices to learn confidential information. Chaos-based computing system is susceptible to process variation which can be leveraged to build a chaos-based PUF. The proposed system demonstrates near ideal PUF characteristics which means systems with large number of primary outputs can be used for authenticating devices

Characterisation of silicon mis negative resistance devices

Metal-insulator-semiconductor switches (MISS), in which the T denotes some form of thin semi-insulating layer and the semiconductor part consists of a pn junction, are part of the general class of regenerative switching devices which includes the thyristor. The switching behaviour of the MISS derives from the ability of the MIS junction to exhibit current gain and to exist in two modes, deep depletion and inversion. In this thesis, a general model for the regenerative switching is proposed after investigating the properties of the MIS junction both theoretically and experimentally. Results from MIS diodes with tunnelling-thickness oxide Mayers indicate that interface states play a dominant role in their electrical behaviour and that the uniformity of the oxide is poor, giving rise to a large spread in the current-voltage characteristics. Subsequently, the epitaxial form of the MISS device is investigated and in particular the importance of isolation of the pn junction. It is concluded that spreading effects set a practical lower limit to the device dimensions, making the epitaxial form unsuitable for microelectronic applications. An alternative semi-insulator, 'silicon-rich oxide' (SRO) is introduced as an optional I-layer with possibly greater integrity than tunnel oxide. MIS diodes formed with SRO are shown to have very similar properties to tunnelling diodes. Large area devices fabricated using this material are surprisingly discovered to exhibit stable negative differential resistance (NDR). Although this discovery at first appears to be contrary to normal circuit stability criteria and to the regenerative feedback model itself, both of these points are resolved. It is shown that the frequency of oscillation of an unstable device is controlled by the external circuit. Then it is proposed that if this frequency is greater than the maximum frequency of operation of the regenerative mechanism, stable NDR is observed. In the final chapter, alternative lateral MISS structures which should overcome the geometrical limitations of epitaxial devices are discussed

Investigation of Multiple-valued Logic Technologies for Beyond-binary Era

Computing technologies are currently based on the binary logic/number system, which is dependent on the simple on and off switching mechanism of the prevailing transistors. With the exponential increase of data processing and storage needs, there is a strong push to move to a higher radix logic/number system that can eradicate or lessen many limitations of the binary system. Anticipated saturation of Moore’s law and the necessity to increase information density and processing speed in the future micro and nanoelectronic circuits and systems provide a strong background and motivation for the beyond-binary logic system. In this review article, different technologies for Multiple-valued-Logic (MVL) devices and the associated prospects and constraints are discussed. The feasibility of the MVL system in real-world applications rests on resolving two major challenges: (i) development of an efficient mathematical approach to implement the MVL logic using available technologies, and (ii) availability of effective synthesis techniques. This review of different technologies for the MVL system is intended to perform a comprehensive investigation of various MVL technologies and a comparative analysis of the feasible approaches to implement MVL devices, especially ternary logic

Multiple-valued logic: technology and circuit implementation

Title from PDF of title page, viewed March 1, 2023Dissertation advisors: Masud H. Chowdhury and Yugyung LeeVitaIncludes bibliographical references (pages 91-107)Dissertation (Ph.D.)--Department of Computer Science and Electrical Engineering. University of Missouri--Kansas City, 2021Computing technologies are currently based on the binary logic/number system, which is dependent on the simple on and off switching mechanism of the prevailing transistors. With the exponential increase of data processing and storage needs, there is a strong push to move to a higher radix logic/number system that can eradicate or lessen many limitations of the binary system. Anticipated saturation of Moore's law and the necessity to increase information density and processing speed in the future micro and nanoelectronic circuits and systems provide a strong background and motivation for the beyond-binary logic system. During this project, different technologies for Multiple-Valued-Logic (MVL) devices and the associated prospects and constraints are discussed. The feasibility of the MVL system in real-world applications rests on resolving two major challenges: (i) development of an efficient mathematical approach to implement the MVL logic using available technologies and (ii) availability of effective synthesis techniques. The main part of this project can be divided into two categories: (i) proposing different novel and efficient design for various logic and arithmetic circuits such as inverter, NAND, NOR, adder, multiplexer etc. (ii) proposing different fast and efficient design for various sequential and memory circuits. For the operation of the device, two of the very promising emerging technologies are used: Graphene Nanoribbon Field Effect Transistor (GNRFET) and Carbon Nano Tube Field Effect Transistor (CNTFET). A comparative analysis of the proposed designs and several state-of-the-art designs are also given in all the cases in terms of delay, total power, and power-delay-product (PDP). The simulation and analysis are performed using the H-SPICE tool with a GNRFET model available on the Nanohub website and CNTFET model available from Standford University website.Introduction -- Fundamentals and scope of multiple valued logic -- Technological aspect of multiple valued logic circuit -- Ternary logic gates using Graphene Nano Ribbon Field Effect Transistor (GNRFET) -- Ternary arithmetic circuits using Graphene Nano Ribbon Field Effect Transistor (GNRFET) -- Ternary sequential circuits using Graphene Nano Ribbon Field Effect Transistor (GNRFET) -- Ternary memory circuits using Carbon Nano Tube Field Effect Transistor (CNTFET) -- Conclusions & future wor

Optimization of niobium oxide-based threshold switches for oscillator-based applications

In niobium oxide-based capacitors non-linear switching characteristics can be observed if the oxide properties are adjusted accordingly. Such non-linear threshold switching characteristics can be utilized in various non-linear circuit applications, which have the potential to pave the way for the application of new computing paradigms. Furthermore, the non-linearity also makes them an interesting candidate for the application as selector devices e.g. for non-volatile memory devices. To satisfy the requirements for those two areas of application, the threshold switching characteristics need to be adjusted to either obtain a maximized voltage extension of the negative differential resistance region in the quasi-static I-V characteristics, which enhances the non-linearity of the devices and results in improved robustness to device-to-device variability or to adapt the threshold voltage to a specific non-volatile memory cell. Those adaptations of the threshold switching characteristics were successfully achieved by deliberate modifications of the niobium oxide stack. Furthermore, the impact of the material stack on the dynamic behavior of the threshold switches in non-linear circuits as well as the impact of the electroforming routine on the threshold switching characteristics were analyzed. The optimized device stack was transferred from the micrometer-sized test structures to submicrometer-sized devices, which were packaged to enable easy integration in complex circuits. Based on those packaged threshold switching devices the behavior of single as well as of coupled relaxation oscillators was analyzed. Subsequently, the obtained results in combination with the measurement results for the statistic device-to-device variability were used as a basis to simulate the pattern formation in coupled relaxation oscillator networks as well as their performance in solving graph coloring problems. Furthermore, strategies to adapt the threshold voltage to the switching characteristics of a tantalum oxide-based non-volatile resistive switch and a non-volatile phase change cell, to enable their application as selector devices for the respective cells, were discussed.:Abstract I Zusammenfassung II List of Abbrevations VI List of Symbols VII 1 Motivation 1 2 Basics 5 2.1 Negative differential resistance and local activity in memristor devices 5 2.2 Threshold switches as selector devices 8 2.3 Switching effects observed in NbOx 13 2.3.1 Threshold switching caused by metal-insulator transition 13 2.3.2 Threshold switching caused by Frenkel-Poole conduction 18 2.3.3 Non-volatile resistive switching 32 3 Sample preparation 35 3.1 Deposition techniques 35 3.1.1 Evaporation 35 3.1.2 Sputtering 36 3.2 Micrometer-sized devices 36 3.3 Submicrometer-sized devices 37 3.3.1 Process flow 37 3.3.2 Reduction of the electrode resistance 39 3.3.3 Transfer from structuring via electron beam lithography to structuring via laser lithography 48 3.3.4 Packaging procedure 50 4 Investigation and optimization of the electrical device characteristic 51 4.1 Introduction 51 4.2 Measurement setup 52 4.3 Electroforming 53 4.3.1 Optimization of the electroforming process 53 4.3.2 Characterization of the formed filament 62 4.4 Dynamic device characteristics 67 4.4.1 Emergence and measurement of dynamic behavior 67 4.4.2 Impact of the dynamic device characteristics on quasi-static I-V characteristics 70 5 Optimization of the material stack 81 5.1 Introduction 81 5.2 Adjustment of the oxygen content in the bottom layer 82 5.3 Influence of the thickness of the oxygen-rich niobium oxide layer 92 5.4 Multilayer stacks 96 5.5 Device-to-device and Sample-to-sample variability 110 6 Applications of NbOx-based threshold switching devices 117 6.1 Introduction 117 6.2 Non-linear circuits 117 6.2.1 Coupled relaxation oscillators 117 6.2.2 Memristor Cellular Neural Network 121 6.2.3 Graph Coloring 127 6.3 Selector devices 132 7 Summary and Outlook 138 8 References 141 9 List of publications 154 10 Appendix 155 10.1 Parameter used for the LT Spice simulation of I-V curves for threshold switches with varying oxide thicknesses 155 10.2 Dependence of the oscillation frequency of the relaxation oscillator circuit on the capacitance and the applied source voltage 156 10.3 Calculation of the oscillation frequency of the relaxation oscillator circuit 157 10.4 Characteristics of the memristors and the cells utilized in the simulation of the memristor cellular neural network 164 10.5 Calculation of the impedance of the cell in the memristor cellular network 166 10.6 Example graphs from the 2nd DIMACS series 179 11 List of Figures 182 12 List of Tables 19