Quantum and spin-based tunneling devices for memory systems

Rapid developments in information technology, such as internet, portable computing, and wireless communication, create a huge demand for fast and reliable ways to store and process information. Thus far, this need has been paralleled with the revolution in solid-state memory technologies. Memory devices, such as SRAM, DRAM, and flash, have been widely used in most electronic products. The primary strategy to keep up the trend is miniaturization. CMOS devices have been scaled down beyond sub-45 nm, the size of only a few atomic layers. Scaling, however, will soon reach the physical limitation of the material and cease to yield the desired enhancement in device performance. In this thesis, an alternative method to scaling is proposed and successfully realized. The proposed scheme integrates quantum devices, Si/SiGe resonant interband tunnel diodes (RITD), with classical CMOS devices forming a microsystem of disparate devices to achieve higher performance as well as higher density. The device/circuit designs, layouts and masks involving 12 levels were fabricated utilizing a process that incorporates nearly a hundred processing steps. Utilizing unique characteristics of each component, a low-power tunneling-based static random access memory (TSRAM) has been demonstrated. The TSRAM cells exhibit bistability operation with a power supply voltage as low as 0.37 V. Various TSRAM cells were also constructed and their latching mechanisms have been extensively investigated. In addition, the operation margins of TSRAM cells are evaluated based on different device structures and temperature variation from room temperature up to 200oC. The versatility of TSRAM is extended beyond the binary system. Using multi-peak Si/SiGe RITD, various multi-valued TSRAM (MV-TSRAM) configurations that can store more than two logic levels per cell are demonstrated. By this virtue, memory density can be substantially increased. Using two novel methods via ambipolar operation and utilization of enable/disable transistors, a six-valued MV-TSRAM cell are demonstrated. A revolutionary novel concept of integrating of Si/SiGe RITD with spin tunnel devices, magnetic tunnel junctions (MTJ), has been developed. This hybrid approach adds non-volatility and multi-valued memory potential as demonstrated by theoretical predictions and simulations. The challenges of physically fabricating these devices have been identified. These include process compatibility and device design. A test bed approach of fabricating RITD-MTJ structures has been developed. In conclusion, this body of work has created a sound foundation for new research frontiers in four different major areas: integrated TSRAM system, MV-TSRAM system, MTJ/RITD-based nonvolatile MRAM, and RITD/CMOS logic circuits

Improving the Immunity of Hybrid SET/MOS Circuits Using Boltzmann Machine Network

Rapid progress in the fabrication technology of silicon nano devices has pushed the device dimension toward 1- 100nm length scale, which renders the basic working principles of CMOS devices more dependent upon quantum effects and doping fluctuations. When device dimensions are scaled down to a few nanometers, quantum effects such as single electron tunneling (SET) and energy quantization lead to interesting new device characteristics that can be exploited to create extremely compact circuits. The SET is one type of nanoscale electronic devices based on quantum tunneling and Coulomb blockade effect, where one or more Coulomb islands are sandwiched between two tunnel junctions which connect respectively with the drain electrode and the source electrode, and are capacitively coupled with one or more gate electrodes. However, both pure SET devices and hybrid SET-MOS circuits face a big problem – the background charges, which influence the accuracy of the circuit. In order to improve their immunity against these charges, we introduce the neuron network ‘Boltzmann machine’ into the circuit. This idea is to improve the accuracy with increasing time redundancy. Single-electron circuits show stochastic behaviors in their operation because of the probabilistic nature of electron tunneling phenomena. They can therefore be successfully used for implementing the stochastic neuron operation of Boltzmann machines. This thesis proposes applications of Boltzmann machine network to improve the immunity of hybrid SET/MOS circuits to overcome random background charges. Detailed unit neuron block and whole neuron network model are used to design hybrid SET/MOS circuits. Two applications based on Boltzmann machine are proposed: (1) Multi-bit A/D converter, and (2) One-bit full adder. Simulation was done using Cadence Spectre simulator with 180nm CMOS model and SET MIB macro model for performance evaluation. And it is expected that our idea can be extended to other hybrid SETMOS

Investigation of Multiple-valued Logic Technologies for Beyond-binary Era

Computing technologies are currently based on the binary logic/number system, which is dependent on the simple on and off switching mechanism of the prevailing transistors. With the exponential increase of data processing and storage needs, there is a strong push to move to a higher radix logic/number system that can eradicate or lessen many limitations of the binary system. Anticipated saturation of Moore’s law and the necessity to increase information density and processing speed in the future micro and nanoelectronic circuits and systems provide a strong background and motivation for the beyond-binary logic system. In this review article, different technologies for Multiple-valued-Logic (MVL) devices and the associated prospects and constraints are discussed. The feasibility of the MVL system in real-world applications rests on resolving two major challenges: (i) development of an efficient mathematical approach to implement the MVL logic using available technologies, and (ii) availability of effective synthesis techniques. This review of different technologies for the MVL system is intended to perform a comprehensive investigation of various MVL technologies and a comparative analysis of the feasible approaches to implement MVL devices, especially ternary logic

Methods and Devices for Modifying Active Paths in a K-Delta-1-Sigma Modulator

The invention relates to an improved K-Delta-1-Sigma Modulators (KG1Ss) that achieve multi GHz sampling rates with 90 nm and 45 nm CMOS processes, and that provide the capability to balance performance with power in many applications. The improved KD1Ss activate all paths when high performance is needed (e.g. high bandwidth), and reduce the effective bandwidth by shutting down multiple paths when low performance is required. The improved KD1Ss can adjust the baseband filtering for lower bandwidth, and can provide large savings in power consumption while maintaining the communication link, which is a great advantage in space communications. The improved KD1Ss herein provides a receiver that adjusts to accommodate a higher rate when a packet is received at a low bandwidth, and at a initial lower rate, power is saved by turning off paths in the KD1S Analog to Digital Converter, and where when a higher rate is required, multiple paths are enabled in the KD1S to accommodate the higher band widths

Conference of Microelectronic Research 1999

https://scholarworks.rit.edu/meec_archive/1008/thumbnail.jp

Multiple-valued logic: technology and circuit implementation

Title from PDF of title page, viewed March 1, 2023Dissertation advisors: Masud H. Chowdhury and Yugyung LeeVitaIncludes bibliographical references (pages 91-107)Dissertation (Ph.D.)--Department of Computer Science and Electrical Engineering. University of Missouri--Kansas City, 2021Computing technologies are currently based on the binary logic/number system, which is dependent on the simple on and off switching mechanism of the prevailing transistors. With the exponential increase of data processing and storage needs, there is a strong push to move to a higher radix logic/number system that can eradicate or lessen many limitations of the binary system. Anticipated saturation of Moore's law and the necessity to increase information density and processing speed in the future micro and nanoelectronic circuits and systems provide a strong background and motivation for the beyond-binary logic system. During this project, different technologies for Multiple-Valued-Logic (MVL) devices and the associated prospects and constraints are discussed. The feasibility of the MVL system in real-world applications rests on resolving two major challenges: (i) development of an efficient mathematical approach to implement the MVL logic using available technologies and (ii) availability of effective synthesis techniques. The main part of this project can be divided into two categories: (i) proposing different novel and efficient design for various logic and arithmetic circuits such as inverter, NAND, NOR, adder, multiplexer etc. (ii) proposing different fast and efficient design for various sequential and memory circuits. For the operation of the device, two of the very promising emerging technologies are used: Graphene Nanoribbon Field Effect Transistor (GNRFET) and Carbon Nano Tube Field Effect Transistor (CNTFET). A comparative analysis of the proposed designs and several state-of-the-art designs are also given in all the cases in terms of delay, total power, and power-delay-product (PDP). The simulation and analysis are performed using the H-SPICE tool with a GNRFET model available on the Nanohub website and CNTFET model available from Standford University website.Introduction -- Fundamentals and scope of multiple valued logic -- Technological aspect of multiple valued logic circuit -- Ternary logic gates using Graphene Nano Ribbon Field Effect Transistor (GNRFET) -- Ternary arithmetic circuits using Graphene Nano Ribbon Field Effect Transistor (GNRFET) -- Ternary sequential circuits using Graphene Nano Ribbon Field Effect Transistor (GNRFET) -- Ternary memory circuits using Carbon Nano Tube Field Effect Transistor (CNTFET) -- Conclusions & future wor

CIRCUITS AND ARCHITECTURE FOR BIO-INSPIRED AI ACCELERATORS

Technological advances in microelectronics envisioned through Moore’s law have led to powerful processors that can handle complex and computationally intensive tasks. Nonetheless, these advancements through technology scaling have come at an unfavorable cost of significantly larger power consumption, which has posed challenges for data processing centers and computers at scale. Moreover, with the emergence of mobile computing platforms constrained by power and bandwidth for distributed computing, the necessity for more energy-efficient scalable local processing has become more significant. Unconventional Compute-in-Memory architectures such as the analog winner-takes-all associative-memory and the Charge-Injection Device processor have been proposed as alternatives. Unconventional charge-based computation has been employed for neural network accelerators in the past, where impressive energy efficiency per operation has been attained in 1-bit vector-vector multiplications, and in recent work, multi-bit vector-vector multiplications. In the latter, computation was carried out by counting quanta of charge at the thermal noise limit, using packets of about 1000 electrons. These systems are neither analog nor digital in the traditional sense but employ mixed-signal circuits to count the packets of charge and hence we call them Quasi-Digital. By amortizing the energy costs of the mixed-signal encoding/decoding over compute-vectors with many elements, high energy efficiencies can be achieved. In this dissertation, I present a design framework for AI accelerators using scalable compute-in-memory architectures. On the device level, two primitive elements are designed and characterized as target computational technologies: (i) a multilevel non-volatile cell and (ii) a pseudo Dynamic Random-Access Memory (pseudo-DRAM) bit-cell. At the level of circuit description, compute-in-memory crossbars and mixed-signal circuits were designed, allowing seamless connectivity to digital controllers. At the level of data representation, both binary and stochastic-unary coding are used to compute Vector-Vector Multiplications (VMMs) at the array level. Finally, on the architectural level, two AI accelerator for data-center processing and edge computing are discussed. Both designs are scalable multi-core Systems-on-Chip (SoCs), where vector-processor arrays are tiled on a 2-layer Network-on-Chip (NoC), enabling neighbor communication and flexible compute vs. memory trade-off. General purpose Arm/RISCV co-processors provide adequate bootstrapping and system-housekeeping and a high-speed interface fabric facilitates Input/Output to main memory

Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters

Algorithms and VLSI architectures for parametric additive synthesis

A parametric additive synthesis approach to sound synthesis is advantageous as it can model sounds in a large scale manner, unlike the classical sinusoidal additive based synthesis paradigms. It is known that a large body of naturally occurring sounds are resonant in character and thus fit the concept well. This thesis is concerned with the computational optimisation of a super class of form ant synthesis which extends the sinusoidal parameters with a spread parameter known as band width. Here a modified formant algorithm is introduced which can be traced back to work done at IRCAM, Paris. When impulse driven, a filter based approach to modelling a formant limits the computational work-load. It is assumed that the filter's coefficients are fixed at initialisation, thus avoiding interpolation which can cause the filter to become chaotic. A filter which is more complex than a second order section is required. Temporal resolution of an impulse generator is achieved by using a two stage polyphase decimator which drives many filterbanks. Each filterbank describes one formant and is composed of sub-elements which allow variation of the formant’s parameters. A resource manager is discussed to overcome the possibility of all sub- banks operating in unison. All filterbanks for one voice are connected in series to the impulse generator and their outputs are summed and scaled accordingly. An explorative study of number systems for DSP algorithms and their architectures is investigated. I invented a new theoretical mechanism for multi-level logic based DSP. Its aims are to reduce the number of transistors and to increase their functionality. A review of synthesis algorithms and VLSI architectures are discussed in a case study between a filter based bit-serial and a CORDIC based sinusoidal generator. They are both of similar size, but the latter is always guaranteed to be stable