Electrical characterization and modeling of random telegraph noise in MIM-like resistive switching devices

Metal-insulator-metal (MIM-like) resistive switching (RS) devices have been increasingly studied for several modern and traditional applications, such as information storage, stochastic computing, and bio-inspired computing. The Random Telegraph Noise (RTN) phenomenon is an important metric regarding the robustness of MIM-like RS devices, and it is intrinsic to any dielectric with defects (traps). In this work, a novel model for anomalous RTN (aRTN) is presented, accounting for the existence of coupling effect between multiple traps regarding current amplitude deviation. It was determined that the contribution of one defect to the current deviation leading to RTN is dependent on the state (i.e., occupied or vacant) of other defects, indicating the presence of coupling effects. A model is proposed to the describe the behavior at low reading voltages (∼ 0.1 V) for both low-resistance state (LRS) and high-resistance state (HRS). The model can be applied to help understanding the dynamics of filament distribution and trapping/de-trapping activity. Additionally, a novel observation of trap acitivity is presented, which results in giant random conductance fluctuations, up to 3 orders of mangnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages. Considering this behavior, presented for three different switching materials, we show that this is a quite general phenomenon and that this significant on/off ratio, in reading conditions, is reproducible and beneficial to ensure recognition of device’s two-state in applications such as stochastic computing integrated circuits (ICs). These events were reproducible for all the aforementioned RS device types in sequential measurements and under different bias conditions.Dispositivos de comutação resistiva (RS) estruturados em uma célula do tipo MIM (Metal Isolante Metal) são cada vez mais estudados para diversas aplicações como, por exemplo, no armazenamento de informações, na computação estocástica e na computação inspirada na atividade cerebral. Isso se deve à capacidade desses dispositivos de superar em performance e eficiência os dispositivos atuais, apesar dos desafios relacionados à confiabilidade. O Random Telegraph Noise é um parâmetro relevante para avaliar a robustez de dispositivos memresistivos, relativos à atividade de defeitos (armadilhas). Neste trabalho, um novo modelo para RTN anômalo (aRTN) é apresentado, indicando o acoplamento na amplitude da flutuação de corrente produzida por diferentes armadilhas no mesmo dispositivo. Determina-se que a contribuição de um defeito para o desvio de corrente que leva ao RTN depende do estado (ocupado ou vago) de outra armadilha, caracterizando, dessa forma, o efeito de acoplamento. Propõe-se um modelo elétrico capaz de descrever esse fenômeno para operação de leitura do dispositivo (∼ 0,1 V). Esse modelo pode ser aplicado para melhor compreensão da dinâmica da distribuição dos filamentos na célula e da atividade e interação das armadilhas presentes. Além disso, uma nova observação da atividade de defeitos é apresentada: verificou-se, experimentalmente e em condição de leitura do estado, flutuações significativas na condutância desses dispositivos, que alcançam até 3 ordens de magnitude, semelhantes ao RTNs. Os experimentos foram feitos em dispositivos RS baseados em dielétricos compostos por TiO2, HfO2 e nitreto de boro hexagonal (h-BN). Considerando este comportamento, apresentado para três diferentes materiais de comutação resistiva, verifica-se que este é um fenômeno bastante recorrente e que a significativa relação entre os estados (LRS/HRS), durante a operação de leitura, é reproduzível e benéfica para assegurar o reconhecimento de estados em aplicações como circuitos integrados de computação estocástica (ICs). Esses eventos se mostram reproduzíveis para todos os tipos de dispositivos RS acima mencionados, em medições sequenciais e sob diferentes condições de polarização de leitura

Nature of Cu Interstitials in Al2O3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices

Resistive random access memory (RRAM) is a prime candidate to replace Flash memory. Of the two classes of RRAM, conductive bridge RAM (CBRAM) is favoured over that based on filaments of oxygen vacancies because of its larger on/off resistance ratio. The nature of the filament in Cu/Al₂O₃-based CBRAM is analysed using density functional theory. The defect and binding energies of Cu interstitials and clusters in Al₂O₃ are calculated. The binding energy per Cu interstitial is shown to significantly increase with increasing Cu coordination, whereas the binding per oxygen vacancy only slightly increases with vacancy concentration. This explains why metal filaments in CBRAM devices tend to be denser than oxygen vacancy filaments. Using three different filament models, we discover that the strong binding between Cu interstitials drives filament formation, resulting in Al ions being driven out of the Cu-rich environment. This leads to the formation of densely packed metallic Cu filaments with bonding similar to Cu metal, as confirmed by electronic structure calculations

Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques

Among non-volatile memory technologies, NAND Flash represents a significant portion in the IC market and has benefitted from the traditional scaling of semiconductor industry allowing its high density integration. However, this scaling seems to be problematic beyond the 22 nm node. In an effort to go beyond this scaling limitation, alternative memory solutions are proposed among which Resistive RAM (RRAM) stands out as a serious candidate for NAND Flash replacement. Hence, in this PhD thesis we try to respond to many open questions about RRAM devices based on hafnium oxide (HfO2), in particular, by addressing the lack of detailed physical comprehension about their operation and reliability. The impact of scaling, the role of electrodes, the process of defects formation and diffusion are investigated. The impact of alloying/doping HfO2 with other materials for improved RRAM performance is also studied. Finally, our study attempts to provide some answers on the conductive filament formation, its stability and possible composition.La mémoire NAND Flash représente une part importante dans le marché des circuits intégrés et a bénéficié de la traditionnelle miniaturisation de l’industrie des sémiconducteurs lui permettant un niveau d’intégration élevé. Toutefois, cette miniaturisation semble poser des sérieux problèmes au-delà du noeud 22 nm. Dans un souci de dépasser cette limite, des solutions mémoires alternatives sont proposées parmi lesquelles la mémoire résistive (RRAM) se pose comme un sérieux candidat pour le remplacement de NAND Flash. Ainsi, dans cette thèse nous essayons de répondre à des nombreuses questions ouvertes sur les dispositifs RRAM à base d’oxyde d’hafnium (HfO2) en particulier en adressant le manque de compréhension physique détaillée sur leur fonctionnement et leur fiabilité. L’impact de la réduction de taille des RRAM, le rôle des électrodes et le processus de formation et de diffusion des défauts sont étudiés. L’impact de l’alliage/dopage de HfO2 avec d’autres matériaux pour l’optimisation des RRAM est aussi abordé. Enfin, notre étude tente de donner quelques réponses sur la formation du filament conducteur, sa stabilité et sa possible composition

Leakage current and resistive switching mechanisms in SrTiO3

PhD ThesisResistive switching random access memory devices have attracted considerable attention due to exhibiting fast programming, non-destructive readout, low power-consumption, high-density integration, and low fabrication-cost. Resistive switching has been observed in a wide range of materials but the underpinning mechanisms still have not been understood completely. This thesis presents a study of the leakage current and resistive switching mechanisms of SrTiO3 metal-insulator-metal devices fabricated using atomic layer deposition and pulse laser deposition techniques. First, the conduction mechanisms in SrTiO3 are investigated. The leakage current characteristics are highly sensitive to the polarity and magnitude of applied voltage bias, punctuated by sharp increases at high field. The characteristics are also asymmetric with bias and the negative to positive current crossover point always occurs at a negative voltage bias. A model comprising thermionic field emission and tunnelling phenomena is proposed to explain ii the dependence of leakage current upon the device parameters quantitatively. SrTiO3 also demonstrates bipolar switching behaviour where the current-density versus voltage (J-V) characteristics show asymmetry at all temperatures examined, with resistive switching behaviour observed at elevated temperatures. The asymmetry is explained by the relative lack of electron traps at one electrode, which is determined from the symmetric J-V curve obtained at room temperature due to the redistribution of the dominant electrical defects in the film. Evidence is presented for a model of resistive switching that originates from defect diffusion (possibly oxygen vacancies) at high temperatures. Finally, a peculiar resistive switching behaviour was observed in pulse laser deposited SrTiO3. This switching depends on both the amplitude and polarity of the applied voltage, and cannot be described as either bipolar or unipolar resistive switching. This behaviour is termed antipolar due to the opposite polarity of the set voltage relative to the previous reset voltage. The proposed model based on electron injection by tunnelling at interfaces and a Poole-Frenkel mechanism through the bulk is extended to explain the antipolar resistive switching behaviour. This model is quantified by use of a simple mathematical equation to simulate the experimental results

PROBING LOCAL VACANCY-DRIVEN RESISTIVE SWITCHING IN METAL OXIDE NANOSTRUCTURES

Novel nonvolatile memory technologies garner intense research interest as conventional ash devices approach their physical limit. Memristors, often comprising an insulating thin film between two metal electrodes to constitute a class of two-terminal devices, enable a variety of important large data storage and data-driven computing applications. In addition to nonvolatile behavior, other features such as high scalability, low power consumption, and sub-nanosecond response times make memristors among the most attractive candidate systems. Their strength in electronic storage relies on the unique properties of the tunable variations in resistance induced from the accumulation of charged defects based on the applied bias history. Metal oxides serve as the most common storage materials, demonstrating advantages including simple fabrication, high reliability, and fast operation speeds. While the basic working concepts and the underlying conduction mechanisms have been established through combined experimental and simulation studies, the role of metal insulator interface, which acts as the crux of coupled electronic-ionic interactions, has not been fully understood. Continuous scaling, for the purpose of high density memories, also requires a detailed understanding of the switching behavior and transport mechanism. Other technical challenges include the development of innovative, low-cost fabrication methods that effectively enable high-performance structures as an alternative to complicated process modules. Stable retention and endurance of the switching characteristics, as well as uniformity of the switching parameters to ensure a valid program/read operation also represent significant challenges. Studies in device and materials optimization remain in the formative stages, and thus motivate this work to drive progress in the most attractive areas, including size dependent behavior and switching performance of memristors. This collection of work aims to correlate resistive switching within metal oxide based memristors with the fundamental physical mechanisms and material properties on a highly localized scale. Chapter 3 relates the device size and the resulting performance matrix of memory cells in the first step towards fully understanding the scaling projection and reliability issues that affect nanoscale architectures. Chapter 4 demonstrates a convective self-assembly, transferable approach that enables the fabrication of highly-controlled nanoribbon comprising solution-processed nanocrystals, providing multiple degrees of freedom for understanding the interfacial memristive behavior of functional oxide nanostructures. As a powerful tool in the study of resistive switching, conductive AFM probes the homogeneity of the charge transport properties, thus offering electrical information by locally applied bias when it is placed in direct contact with desired regime. Finally we also focus on the improving the cycle-to-cycle uniformity by embedding nanostructure into conventional metal-insulator-metal (MIM) geometry in Chapter 5. This improvement is attributed to the concentration of electric field when metal nanoislands are inserted into the oxide film matrix. The details of this work will highlight the tunable and optimizable template-driven method that can be applied on any memristive systems, yielding a superior uniformity of operating voltage and resistance states. In summary, this thesis promotes the development of novel, high-performance metal oxide based memristors enabled by the availability of new, nanostructured materials and innovations in device structure engineering. The switching performance, underlying mechanisms, area/defect concentration effects, development of solution-processed nanocrystals assemblies and chemistries, and highly enhanced uniformity in memristors are addressed by combining systematic deposition approaches with the advanced nanoscopic observation of the conducting filament, leading to the strongest competitor among future nonvolatile memory solution

Resistive switching in ferroelectric polycrystalline Yttrium Manganese Oxide thin films

A memristor is a two-terminal device which exhibits a hysteresis loop in the current-voltage characteristics. Resistive switching refers to reversible non-volatile change in state of the resistance. There exists a wide range of materials which show resistive switching i.e, phase change materials are used in today’s technology which are a main component of the resistive random access memory. In actual research, mostly metal oxides are investigated regarding their resistive switching which is based on migration of anions and cations. Additionally, in hexagonal manganites, h-RMnO3 (R = Y, In, Sc, Ho,...,Lu), the multiferroic properties and nano-sized conducting domain walls introduce further interesting aspects in this material class which may contribute to additional features in resistive switching. This dissertation investigates the resistive switching in yttrium manganite thin film (Y1Mn1O3, Y0.95Mn1.05O3, Y1Mn0.99Ti0.01O3 and Y0.94Mn1.05Ti0.01O3) based metal-insulator-metal structures with different top electrodes (Au or Al) and bottom electrodes (Pt or Pt/Ti or Pt/Cr) in 2-point DC probe measurements. Yttrium manganite thin films have been deposited by pulsed laser deposition on metal coated SiO2/Si substrates. Electrical characterization of yttrium manganite thin films in a metal-insulator-metal structure exhibit electroforming-free unipolar resistive switching. High voltages and currents are required for SET (V_ ) and RESET (I_ ), respectively. The observed resistive switching is assigned to the formation (low resistance state) and rupture (high resistance state) of conductive, metallic-like filaments induced by a thermo-chemical phenomena. Observed unipolar RS is classified as the thermo-chemical memory (TCM) resistive switching phenomena related to the locally increased temperature. The stability of conductive filaments leads to good retention of the programmed states with large memory window (OFF to ON resistance in the order of 10^4 - 10^6, depends on electrodes, electrode size and composition of yttrium manganite thin films). The endurance or number of loading cycles of the resistive switching devices are improved and is in the order of 10^3 for Y1Mn1O3 and Y0.95Mn1.05O3 composition with Al-top electrodes and Pt-bottom electrode. The maximum number of loading cycles is observed for an applied negative bias, a preferential negative polarity for switching the yttrium manganite thin film devices with Au or Al top electrodes and Pt or Pt/Ti bottom electrodes. Whereas, yttrium manganite thin film devices with Pt/Cr-bottom electrode and Al-top electrodes a preferential positive bias is required for switching the devices. Temperature-dependent measurements of yttrium manganite thin films deposited on Pt/SiO2/Si show semiconducting and metallic-like conduction in high resistance state and low resistance state, respectively. The activation energy () extracted in the ohmic region for hopping of holes localized at Mn4+ is in the range of 0.36 eV - 0.43 eV. Scanning electron microscopy in secondary electron emission mode with an in-lens detector and a small acceleration voltage of 1.0 kV is used to characterize the ferroelectric charged domain network formation in polycrystalline hexagonal yttrium manganite thin film. The observed bright regions correspond to local polarization vector with upward polarization components (+P ) and dark regions to local polarization vector with downward polarization components (-P ). A dense domain network is observed for Mn-rich samples (Y0.95Mn1.05O3 and Y0.94Mn1.05Ti0.01O3) in comparison to Y1Mn1O3 and Y1Mn0.99Ti0.01O3 with smaller grains show isolated charged domains. The observed dependency of different compositions to the charged domain density network in yttrium manganite thin films may influenced by different factors: stoichiometry gradient, oxygen, dopant concentration and the resulting grain structure.Ein Memristor ist ein Bauelement, welches eine Hysterese beim Vermessen seiner IU-Kennlinie aufweist. Dieses als „Widerstandsschalten“ bezeichnete Phänomen beruht auf der nichtflüchtigen Veränderung des Widerstandes. Es existiert eine breite Auswahl an Materialien, welche Widerstandsschalten zeigen, z.B. sind Phasenwechselmaterialien die Hauptkomponenten in aktuellen RRAMs. Aktuelle werden hauptsächlich Metalloxide untersucht, welche durch Migration von Anionen und Kationen Widerstandsschalten hervorrufen. Weitere Materialien wie hexagonale Manganoxidverbindungen RMnO3 (R = Y, In, Sc, Ho,...,Lu), besitzen zusätzliche multiferroische Eigenschaften, bei denen geladene Domänengrenzen weitere interessante Aspekte in dieser Materialklasse einführen und das Widerstandsschalten beeinflussen können. Die vorliegende Dissertation untersucht das Widerstandsschalten in Yttriummanganoxid-Dünnfilmen mit unterschiedlichen Kompositionen und unterschiedlichen Elektrodenmaterialien. Y1Mn1O3, Y0.95Mn1.05O3, Y1Mn0.99Ti0.01O3 und Y0.94Mn1.05Ti0.01O3, wurden mittels gepulster Laserdeposition auf metallisierte Si/SiO2 Substrate abgeschieden. Die elektrische Charakterisierung von Yttriummanganoxid-Dünnfilmen in einer Metall-Isolator-Metall Sandwichstruktur weist auf elektroformierungsfreies, unipolares Widerstandsschalten hin. Das beobachtete Widerstandsschalten wird auf die Formierung (niederohmiger Zustand) und Zerstörung (hochohmiger Zustand) des leitfähigen, metallischen Filaments (geladenen Domänengrenzen oder auch Vortices), verursacht durch thermisch-chemische Vorgänge, zurückgeführt. Die geladenen Domänengrenzen und/oder Vortices in Yttriummanganoxid-Dünnfilmen beeinflussen unter Umständen als nanoskalige Objekte die Formierung der leitfähigen Filamente. Die Stabilität der leitfähigen Filamente führt zu einer guten Langzeitspeicherung der programmierten Zustände, welche auch ein sehr großes Speicherfenster (Widerstandsverhältnis zwischen Aus/An-Zustand von 10^5) aufweisen. Die großen Widerstandsverhältnisse sind z.B. für die Herstellung von Auswahlschaltern (selektoren) in Crossbar-Strukturen notwendig, um die möglicherweise auftretenden Kriechströme in Crossbar-Strukturen zu unterdrücken, welche sonst Lesefehler der adressierten Zellen hervorrufen würden. Die Wiederbeschreibbarkeit ist in der Größenordnung von ca. 10^3, abhängig von der chemischen Zusammensetzung des Yttriummanganoxide-Dünnfilmes und vom verwendeten Elektrodenmaterial. Resultate der Charakterisierung mittels Rasterelektronenmikroskopie im Sekundärelektronenmodus mit einer kleinen Beschleunigungsspannung von 1.0 kV weisen auf geladene ferroelektrische Domänen in polykristallinem hexagonalen YMnO3 Dünnfilmen hin. Deswegen muß der Einfluss von geladenen Domänengrenzen und multiferroischen Vortices auf das beobachtete Widerstandsschalten in hexagonalem YMnO3 berücksichtigt werden

Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory

Transition metal oxides (TMOs) exhibit characteristic resistance changes when subjected to high electric fields due to the creation, drift and diffusion of defects, and this resistive-switching response is of interest for future non-volatile memory applications. Indeed, resistive random access memories (ReRAM) are considered promising alternatives to conventional charge storage-based devices because of their low production cost, simple fabrication, and excellent scalability. However, the realization of reliable ReRAM devices and their integration in large-scale arrays requires further understanding of the switching mechanisms and the development of new strategies for improving integrated device functionality. The aim of this work is to understand the role of the material structure on device reliability and to investigate the integration of passive selector elements with memory devices for use in memory cross-bar arrays. The thesis begins by investigating the properties of relevant oxide films (ALD HfO2 and plasma deposited NbOx) and then addresses three technologically relevant problems. Specifically these include: 1) understanding how the roughness of metal/dielectric interfaces affects dielectric breakdown and switching behaviour; 2) exploring methods for reducing the operating current of selector and memory/selector devices and 3) investigating the effect of operating conditions on the switching response of devices. The first of these studies is based on Pt/Ti/HfO2/Pt devices and combines experimental methods and finite element modelling to understand the effect of the Pt/HfO2 interface roughness on the electroforming and switching response. Atomic force microscopy (AFM) showed that the roughness of Pt electrodes deposited by electron-beam evaporation increased with film thickness due to facetted grain growth. Results show that roughness leads to a reduction in the electroforming voltage of HfO2, an increase in the failure rate of devices, and a corresponding reduction in resistive switching reliability. Conventional wisdom suggests that these effects result from local electric field enhancement in the vicinity of electrode asperities. However, the effect on electroforming voltage is much less than estimated from simple geometric considerations. Comparison with finite-element modelled showed high-aspect-ratio asperities can produce field enhancements of more than an order of magnitude but that the generation and redistribution of defects moderates this effect prior to dielectric breakdown. As a consequence, the effect of field enhancement is less than anticipated from the initial electric-field distribution alone. It is argued that the increase in the device failure rate with increasing electrode roughness derives partly from an increase in the film defect density and effective device area and that these effects contribute to the reduction in breakdown voltage. The second study showed that the leakage current in NbO2-x selector (1S) elements is shown to be reduced by the properties of an adjacent memory (1M) element when integrated into a hybrid selector-memory device structure. This is shown to result from current confinement in conductive filaments formed in the memory layer. Finite element modelling of the selector-memory structures is used to confirm the observations and to explore material dependencies. The thermal and electrical conductivities of the memory layer are shown to influence the threshold current, but the dominant effect is due to current confinement. The final study explores the effect of device operating conditions on its operation and identifies an alternative approach for reducing the forming and RESET current in integrated memory/selector devices. This study is based on Pt/Nb/HfO2/Pt devices which require a very "soft" electroforming process. Such devices are shown to undergo configurable switching controlled by the SET compliance current. When operated at a low compliance-current (~100 µA), devices show uniform bipolar resistive switching behaviour. As the compliance current is increased (~500 µA), the switching mode changes to integrated threshold-resistive (1S1M) switching, and at still higher currents (~1 mA), it changes to symmetric threshold switching (1S) characteristic of threshold switching in NbO2-. These switching transitions are shown to be consistent with the development of an NbO2- interlayer at the Nb/HfO2 interface that is limited by the set compliance current due to its effect on oxygen transport and local Joule heating. The proposed mechanism is supported by finite element modelling of the 1S1M response assuming the presence of such an interlayer. These findings help to understand role of interface reactions in controlling device performance and provide a means for the self-assembly of integrated 1S1M resistive random access memory structures

Local Characterization of Resistance Switching Phenomena in Transition Metal Oxides

The development of neuromorphic computing systems that emulate the analog charge states and plasticity of the brain’s neuron-synapse architecture has been a major driver of resistance switching materials exploration. Materials that demonstrate changes in conductance with tunable ratios and volatility of resistance states within a single layer are highly desirable. Although excellent resistance switching device performance has been demonstrated in a range of transition metal oxides, a lack of understanding of the fundamental microscale evolution of a material during resistance switching presents a key limitation to controlling switching parameters. Here, we examine the role of materials defects on local resistance switching structures in two representative transition metal oxide materials: HfOv2 thin films and hydrothermally synthesized VOv2 single crystals. In each material, we seek to clarify the structure of resistance switching domains and the kinetics of domain formation resulting from intentional defect introduction. This thesis is therefore divided into two main parts concerning (1) the introduction of planar defects in HfOv2 filamentary resistance switching devices, and (2) the impact of introduction of point defects on the metal-insulator transition in VOv2 single crystals. Part I (Sections 2 – 3) details investigation of Cu ion migration rates in Cu/HfOv2/p+Si and Cu/HfOv2/TiN devices in which oxide microstructure varies between amorphous, polycrystalline, and oriented polycrystalline. Ion migration across the oxide layer is shown to be rate limiting and faster in polycrystalline layers than in amorphous HfO2 layers at equivalent electric field. Moreover, the 3D shape of conductive filaments is investigated by a scribing atomic force microscopy experiment in Cu/HfOv2/p+Si devices and reveals a broad range of filament shapes under identical electrical stress conditions. Thermal dissipation is interpreted as the principal determinant of filament area, while oxide microstructure is shown to direct the location of filaments within the device. In part II (Sections 4 – 5), the hysteresis of the metal-insulator transition (switching volatility) in VOv2 is shown to intrinsically derive from nucleation limited transformations in individual particles. Here, hysteresis is a strong function of particle size, but may be increased or decreased by synthesis techniques that affect the concentration and potency of intrinsic point defects. Upon chemical doping with boron at interstitial lattice sites, a unique kinetic effect on the hysteresis of the current driven metal-insulator transition in two terminal BxVOv2 devices is observed. Dependence of the critical switching current on thermal relaxation time and temperature is characterized and recommendations for further kinetic testing are made. Finally, a few experimental extensions of the work presented in this thesis are made in Section 6

Bistability and Electrical Characterisation of Two Terminal Non-Volatile Polymer Memory Devices.

Polymer blended with nanoparticle and ferroelectric materials in two terminal memory devices has potential for electronic memory devices that may offer increased storage capacity and performance. Towards understanding the memory performance of a combination of an organic polymer with a ferroelectric or unpolarised material, this research is concerned with testing the memory programming and capacitance of these materials using two-terminal memory device structures. This research contributes to previous investigation into the internal working mechanisms of polymer memory devices and increases understanding and verifies the principles of these mechanisms through testing previously untested materials in different material compositions. This study makes a novel contribution by testing the electrical bistability of new materials; specifically, nickel oxide, barium titanate and methylammonium lead bromide and considers their properties which include nanoparticles, ferroelectric, perovskite structures and organic-inorganic composition. Due to their material properties which have different implications for internal switching and memory storage. Nanoparticles have a greater band gap between the valence band and conduction band compare to bulk material which is exploited for memory storage and ferroelectric properties and perovskite materials have non-volatile properties suitable for switching mechanisms. Specific attributes of memory function which include charging mechanism, device programming, capacitance and charge retention were tested for different material compositions which included, blend and layered with a PVAc polymer, and as a bulk material with a single crystal structure using MIM memory devices and MIS device structures. The results showed that nickel oxide was the most effective material as a blend with the polymer for memory performance, this was followed by barium titanate, however, methylammonium lead bromide performed poorly with polymer but showed promise as a single crystal structure. The results also showed that an increase in concentration of the tested material in a blend composition resulted in a corresponding increase in memory function, and that blend compositions were much more effective than layered compositions