FINITE ELEMENT ANALYSIS AND EXPERIMENTAL VERIFICATION OF SOI WAVEGUIDE LOSSES

Bending loss in silicon-on-insulator rib waveguides was calculated using conformal mapping of the curved waveguide to an equivalent straight waveguide. Finite-element analysis with perfectly matched layer boundaries was used to solve the vector wave equation. Transmission loss was experimentally measured as a function of bend radius for several SOI waveguides. Good agreement was found between simulated and measured losses, and this technique was confirmed as a good predictor for loss and for minimum bend radius for efficient design

Electro-optic routing of photons from single quantum dots in photonic integrated circuits

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.Comment: 7 pages, 4 figues + supplementary informatio

Characterisation of silicon photonics devices

Silicon based integrated circuits has been dominating the electronics technology industry in the last few decades. As the telecommunications and the computing industry slowly converges together, the need for a material to build photonics integrated circuits (PIC) that can be cost-effective and be produced in mass market has become very important. This thesis describes and outlines the characteristics of high index contrast waveguides as a building blocks that can be designed, fabricated and employed on devices in silicon photonics. Initially in this work, a fully vectorial H-field based finite element method has been used to obtain the modal characteristics of high index contrast bent waveguide to get a better understanding of the curved section. Through the beam propagation method, the propagation losses and the spot-size along the propagation distance are obtained when a mode from the straight guide is launched into a bent guide. It is also learnt that mode beating exists at the junction of a straight-to-bent waveguide, in which higher order modes will also be generated. It will be shown in this work that power do exchange between the two polarization states, therefore the polarization conversion, the power losses and the bending losses will be investigated. It will also shown in here that by applying lateral offsets with coupled waveguides of unequal widths, the insertion loss can be reduced. Secondly, for a high index contrast waveguide such as the silicon strip waveguide with a nanoscale cross-section, modes in such waveguide are not purely TE or TM but hybrid in nature, with all the six components of their E and H-fields being present. Therefore a detail analysis of the modal field profiles along with the Poynting vector profile will be shown. The effects of waveguide's width and height on the effective indices, the hybridness, the modal effective area and the power confinement in the core or cladding has been studied. Furthermore the modal birefringence of such strip waveguide will be shown. It will be presented that for a strip waveguide with height of 260 nm, single mode exists in the region of the width being 200 nm to 400 nm and that the modal effective is at its minimum when width is around 320 nm for both polarization states. Thirdly, a compact polarization rotator with an asymmetric waveguide structure design, suitable for fabrication that does not require a slanted side wall or curved waveguide is considered in this work. It will be shown in here that due to the hybrid nature of the asymmetric waveguide design, maximum polarization rotation (from TE to TM) will be achieve by enhancing the non-dominant field profile of both polarized fundamental mode. As the modal hybridness and the propagation constants of both polarized modes will be obtained, the half-beat length, polarization conversion and polarization cross-talk will be calculated by using the FEM and the least squares residual boundary method (LSBR). It is learnt that a compact single stage polarization rotator with a device length of 48 μm with more than 99% of polarization conversion is achieved in this work. Finally, a study of vertical and horizontal slot waveguide will be shown. Based on silicon strip waveguide, a detail modal characteristics of E and H-fields along with the Poynting vectors are presented. It will be shown that for slot waveguide, high power confinement and power density will be achieved in the slot area. It will be presented that by optimising the waveguide and slot dimension, the performance of the power confinement and power density in the slot region can be improved

Modification of Plasmonic Nano Structures\u27 Absorption and Scattering Under Evanescent Wave Illumination Above Optical Waveguides or With the Presence of Different Material Nano Scale Atomic Force Microscope Tips

The interaction of an evanescent wave and plasmonic nanostructures are simulated in Finite Element Method. Specifically, the optical absorption cross section (Cabs) of a silver nanoparticle (AgNP) and a gold nanoparticle (AuNP) in the presence of metallic (gold) and dielectric (silicon) atomic force microscope (AFM) probes are numerically calculated in COMSOL. The system was illuminated by a transverse magnetic polarized, total internally reflected (TIR) waves or propagating surface plasmon (SP) wave. Both material nanoscale probes localize and enhance the field between the apex of the tip and the particle. Based on the absorption cross section equation the author was able to demonstrate the increment of absorption cross section when the Si tip was brought closer to the AuNP, or when the Si tip apex was made larger. However, the equation was not enough to predict the absorption modification under metallic tips, especially for a AgNP\u27s Cabs; neither it was possible to estimate the optical absorption based on the localized enhanced field caused by a gold tip. With the help of the driven damped harmonic oscillator equation, the Cabs of nanoparticles was explained. In addition, this model was applicable for both TIR and Surface Plasmon Polaritons illuminations. Fitting the numerical absorption data to a driven damped harmonic oscillator (HO) model revealed that the AFM tip modifies both the driving force (F0), consisting of the free carrier charge and the driving field, and the overall damping of the oscillator beta. An increased F0 or a decreased beta will result in an increased Cabs and vice versa. Moreover, these effects of F0 and beta can be complementary or competing, and they combine to either enhance or suppress absorption. Hence, a significantly higher beta with a small increment in F0 will result in an absorption suppression. Therefore, under a Si tip, Cabs of a AuNP is enhanced while Cabs of a AgNP is suppressed. In contrast, a Au tip suppresses the Cabs for both Au and Ag NPs. As an extension of this absorption model, further investigation of the guided mode and a close by nanostructure is proposed, where the scattered wave off the structure attenuates the guided mode with destructive interference