118 research outputs found
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Skybridge: A New Nanoscale 3-D Computing Framework for Future Integrated Circuits
Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We propose a new 3-D IC fabric technology, Skybridge [6], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge’s core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance/watt benefits, and 10x reduction in interconnect lengths vs. scaled 16-nm CMOS [6]. Fabric-level heat extraction features are found to be effective in managing IC thermal profiles in 3-D. This 3-D integrated fabric proposal overcomes the current impasse of CMOS in a manner that can be immediately adopted, and offers unique solution to continue technology scaling in the 21st century
Thermal Management in Fine-Grained 3-D Integrated Circuits
For beyond 2-D CMOS logic, various 3-D integration approaches specially
transistor based 3-D integrations such as monolithic 3-D [1], Skybridge [2],
SN3D [3] holds most promise. However, such 3D architectures within small form
factor increase hotspots and demand careful consideration of thermal management
at all levels of integration [4] as stacked transistors are detached from the
substrate (i.e., heat sink). Traditional system level approaches such as liquid
cooling [5], heat spreader [6], etc. are inadequate for transistor level 3-D
integration and have huge cost overhead [7]. In this paper, we investigate the
thermal profile for transistor level 3-D integration approaches through finite
element based modeling. Additionally, we propose generic physical level heat
management features for such transistor level 3-D integration and show their
application through detailed thermal modeling and simulations. These features
include a thermal junction and heat conducting nano pillar. The heat junction
is a specialized junction to extract heat from a selected region in 3-D; it
allows heat conduction without interference with the electrical activities of
the circuit. In conjunction with the junction, our proposed thermal pillars
enable heat dissipation through the substrate; these pillars are analogous to
TSVs/Vias, but carry only heat. Such structures are generic and is applicable
to any transistor level 3-D integration approaches. We perform 3-D finite
element based analysis to capture both static and transient thermal behaviors
of 3-D circuits, and show the effectiveness of heat management features. Our
simulation results show that without any heat extraction feature, temperature
for 3-D integrated circuits increased by almost 100K-200K. However, proposed
heat extraction feature is very effective in heat management, reducing
temperature from heated area by up to 53%.Comment: 9 Page
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Skybridge-3D-CMOS: A Fine-Grained Vertical 3D-CMOS Technology Paving New Direction for 3D IC
2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling.
Skybridge-3D-CMOS (S3DC) is a fine-grained 3D IC fabric that uses vertically-stacked gates and 3D interconnections composed on vertical nanowires to yield orders of magnitude benefits over 2D ICs. This 3D fabric fully uses the vertical dimension instead of relying on a multi-layered 2D mindset. Its core fabric aspects including device, circuit-style, interconnect and heat-extraction components are co-architected considering the major challenges in 3D IC technology. In S3DC, the 3D interconnections provide greater routing capacity in both vertical and horizontal directions compared to conventional 3D ICs, which eliminates the routability issue in conventional 3D IC technology while enabling ultra-high density design and significant benefits over 2D. Also, the improved vertical routing capacity in S3DC is beneficial for achieving robust and high-density power delivery network (PDN) design while conventional 3D IC has design issues in PDN design due to limited routing resource in vertical direction. Additionally, the 3D gate-all-around transistor incorporating with 3D interconnect in S3DC enables significant SRAM design benefits and good tolerance of process variation compared to conventional 3D IC technology as well as 2D CMOS.
The transistor-level (TR-L) monolithic 3D IC (M3D) is the state-of-the-art monolithic 3D technology which shows better benefits than other M3D approaches as well as the TSV-based 3D IC approach. The S3DC is evaluated in large-scale benchmark circuits with comparison to TR-L M3D as well as 2D CMOS. Skybridge yields up to 3x lower power against 2D with no routing congestion in benchmark circuits while TR-L M3D only has up-to 22% power saving with severe routing congestions in the design. The PDN design in S3DC show
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SkyNet: Memristor-based 3D IC for Artificial Neural Networks
Hardware implementations of artificial neural networks (ANNs) have become feasible due to the advent of persistent 2-terminal devices such as memristor, phase change memory, MTJs, etc. Hybrid memristor crossbar/CMOS systems have been studied extensively and demonstrated experimentally. In these circuits, memristors located at each cross point in a crossbar are, however, stacked on top of CMOS circuits using back end of line processing (BOEL), limiting scaling. Each neuron’s functionality is spread across layers of CMOS and memristor crossbar and thus cannot support the required connectivity to implement large-scale multi-layered ANNs.
This work proposes a new fine-grained 3D integrated circuit technology for ANNs that is one of the first IC technologies for this purpose. Synaptic weights implemented with devices are incorporated in a uniform vertical nanowire template co-locating the memory and computation requirements of ANNs within each neuron. Novel 3D routing features are used for interconnections in all three dimensions between the devices enabling high connectivity without the need for special pins or metal vias. To demonstrate the proof of concept of this fabric, classification of binary images using a perceptron-based feed forward neural network is shown. Bottom-up evaluations for the proposed fabric considering 3D implementation of fabric components reveal up to 19x density, 1.2x power benefits when compared to 16nm hybrid memristor/CMOS technology
Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS
Continuous scaling of CMOS has been the major catalyst in miniaturization of
integrated circuits (ICs) and crucial for global socio-economic progress.
However, scaling to sub-20nm technologies is proving to be challenging as
MOSFETs are reaching their fundamental limits and interconnection bottleneck is
dominating IC operational power and performance. Migrating to 3-D, as a way to
advance scaling, has eluded us due to inherent customization and manufacturing
requirements in CMOS that are incompatible with 3-D organization. Partial
attempts with die-die and layer-layer stacking have their own limitations. We
propose a 3-D IC fabric technology, Skybridge[TM], which offers paradigm shift
in technology scaling as well as design. We co-architect Skybridge's core
aspects, from device to circuit style, connectivity, thermal management, and
manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D
template. Our extensive bottom-up simulations, accounting for detailed material
system structures, manufacturing process, device, and circuit parasitics,
carried through for several designs including a designed microprocessor, reveal
a 30-60x density, 3.5x performance per watt benefits, and 10X reduction in
interconnect lengths vs. scaled 16-nm CMOS. Fabric-level heat extraction
features are shown to successfully manage IC thermal profiles in 3-D. Skybridge
can provide continuous scaling of integrated circuits beyond CMOS in the 21st
century.Comment: 53 Page
Challenges and solutions for large-scale integration of emerging technologies
Title from PDF of title page viewed June 15, 2021Dissertation advisor: Mostafizur RahmanVitaIncludes bibliographical references (pages 67-88)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2021The semiconductor revolution so far has been primarily driven by the ability to shrink devices and interconnects proportionally (Moore's law) while achieving incremental benefits. In sub-10nm nodes, device scaling reaches its fundamental limits, and the interconnect bottleneck is dominating power and performance. As the traditional way of CMOS scaling comes to an end, it is essential to find an alternative to continue this progress. However, an alternative technology for general-purpose computing remains elusive; currently pursued research directions face adoption challenges in all aspects from materials, devices to architecture, thermal management, integration, and manufacturing.
Crosstalk Computing, a novel emerging computing technique, addresses some of the challenges and proposes a new paradigm for circuit design, scaling, and security. However, like other emerging technologies, Crosstalk Computing also faces challenges like designing large-scale circuits using existing CAD tools, scalability, evaluation and benchmarking of large-scale designs, experimentation through commercial foundry processes to compete/co-exist with CMOS for digital logic implementations.
This dissertation addresses these issues by providing a methodology for circuit synthesis customizing the existing EDA tool flow, evaluating and benchmarking against state-of-the-art CMOS for large-scale circuits designed at 7nm from MCNC benchmark suits. This research also presents a study on Crosstalk technology's scalability aspects and shows how the circuits' properties evolve from 180nm to 7nm technology nodes. Some significant results are for primitive Crosstalk gate, designed in 180nm, 65nm, 32nm, and 7nm technology nodes, the average reduction in power is 42.5%, and an average improvement in performance is 34.5% comparing to CMOS for all mentioned nodes. For benchmarking large-scale circuits designed at 7nm, there are 48%, 57%, and 10% improvements against CMOS designs in terms of density, power, and performance, respectively. An experimental demonstration of a proof-of-concept prototype chip for Crosstalk Computing at TSMC 65nm technology is also presented in this dissertation, showing the Crosstalk gates can be realized using the existing manufacturing process.
Additionally, the dissertation also provides a fine-grained thermal management approach for emerging technologies like transistor-level 3-D integration (Monolithic 3-D, Skybridge, SN3D), which holds the most promise beyond 2-D CMOS technology. However, such 3-D architectures within small form factors increase hotspots and demand careful consideration of thermal management at all integration levels. This research proposes a new direction for fine-grained thermal management approach for transistor-level 3-D integrated circuits through the insertion of architected heat extraction features that can be part of circuit design, and an integrated methodology for thermal evaluation of 3-D circuits combining different simulation outcomes at advanced nodes, which can be integrated to traditional CAD flow. The results show that the proposed heat extraction features effectively reduce the temperature from a heated location. Thus, the dissertation provides a new perspective to overcome the challenges faced by emerging technologies where the device, circuit, connectivity, heat management, and manufacturing are addressed in an integrated manner.Introduction and motivation -- Cross talk computing overview -- Logic simplification approach for Crosstalk circuit design -- Crostalk computing scalability study: from 180 nm to 7 nm -- Designing large*scale circuits in Crosstalk at 7 nm -- Comparison and benchmarking -- Experimental demonstration of Crosstalk computing -- Thermal management challenges and mitigation techniques for transistor-level- 3D integratio
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Architecting SkyBridge-CMOS
As the scaling of CMOS approaches fundamental limits, revolutionary technology beyond the end of CMOS roadmap is essential to continue the progress and miniaturization of integrated circuits. Recent research efforts in 3-D circuit integration explore pathways of continuing the scaling by co-designing for device, circuit, connectivity, heat and manufacturing challenges in a 3-D fabric-centric manner. SkyBridge fabric is one such approach that addresses fine-grained integration in 3-D, achieves orders of magnitude benefits over projected scaled 2-D CMOS, and provides a pathway for continuing scaling beyond 2-D CMOS.
However, SkyBridge fabric utilizes only single type transistors in order to reduce manufacture complexity, which limits its circuit implementation to dynamic logic. This design choice introduces multiple challenges for SkyBridge such as high switching power consumption, susceptibility to noise, and increased complexity for clocking. In this thesis we propose a new 3-D fabric, similar in mindset to SkyBridge, but with static logic circuit implementation in order to mitigate the afore-mentioned challenges. We present an integrated framework to realize static circuits with vertical nanowires, and co-design it across all layers spanning fundamental fabric structures to large circuits. The new fabric, named as SkyBridge-CMOS, introduces new technology, structures and circuit designs to meet the additional requirements for implementing static circuits. One of the critical challenges addressed here is integrating both n-type and p-type nanowires. Molecular bonding process allows precise control between different doping regions, and novel fabric components are proposed to achieve 3-D routing between various doping regions.
Core fabric components are designed, optimized and modeled with their physical level information taken into account. Based on these basic structures we design and evaluate various logic gates, arithmetic circuits and SRAM in terms of power, area footprint and delay. A comprehensive evaluation methodology spanning material/device level to circuit level is followed. Benchmarking against 16nm 2-D CMOS shows significant improvement of up to 50X in area footprint and 9.3X in total power efficiency for low power applications, and 3X in throughput for high performance applications. Also, better noise resilience and better power efficiency can be guaranteed when compared with original SkyBridge fabrics
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