1,111 research outputs found

    Memory formation in matter

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    Memory formation in matter is a theme of broad intellectual relevance; it sits at the interdisciplinary crossroads of physics, biology, chemistry, and computer science. Memory connotes the ability to encode, access, and erase signatures of past history in the state of a system. Once the system has completely relaxed to thermal equilibrium, it is no longer able to recall aspects of its evolution. Memory of initial conditions or previous training protocols will be lost. Thus many forms of memory are intrinsically tied to far-from-equilibrium behavior and to transient response to a perturbation. This general behavior arises in diverse contexts in condensed matter physics and materials: phase change memory, shape memory, echoes, memory effects in glasses, return-point memory in disordered magnets, as well as related contexts in computer science. Yet, as opposed to the situation in biology, there is currently no common categorization and description of the memory behavior that appears to be prevalent throughout condensed-matter systems. Here we focus on material memories. We will describe the basic phenomenology of a few of the known behaviors that can be understood as constituting a memory. We hope that this will be a guide towards developing the unifying conceptual underpinnings for a broad understanding of memory effects that appear in materials

    NASA JSC neural network survey results

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    A survey of Artificial Neural Systems in support of NASA's (Johnson Space Center) Automatic Perception for Mission Planning and Flight Control Research Program was conducted. Several of the world's leading researchers contributed papers containing their most recent results on artificial neural systems. These papers were broken into categories and descriptive accounts of the results make up a large part of this report. Also included is material on sources of information on artificial neural systems such as books, technical reports, software tools, etc

    Analogue auto-associative memory using a multi-valued memristive memory cell

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    Most brain-like computing systems build up from neural networks. While there are some essential problems with this approach, it is well-known that the brain functionally operates as an associative memory. Building associative memories using conventional CMOS technology has already been performed, but this approach suffers from a lack of scalability and information density. Additionally, for a long time, one of the differences between analogue and digital electronics was the fact that digital electronics allowed for easier data storage through a variety of different memory cell architectures. These memory designs make extensive use of transistors and generally trade area, performance and power. However, memristors can be used as high density, analogue, passive storage elements and this paper presents 2 memory cell designs that allow for such multi-valued storage. The noise resistance of these cells is tested and indicates a very good tolerance to external influences, while overall they provide for a very accurate storage of data with high information density. Following on from the description of the storage cells, the paper then continues to build them into an associative memory

    Modeling the strain-range dependent cyclic hardening of SS304 and 08Ch18N10T stainless steel with a memory surface.

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    This paper deals with the development of a cyclic plasticity model suitable for predicting the strain range-dependent behavior of austenitic steels. The proposed cyclic plasticity model uses the virtual back-stress variable corresponding to a cyclically-stable material under strain control. This new internal variable is defined by means of a memory surface introduced in the stress space. The linear isotropic hardening rule is also superposed. First, the proposed model was validated on experimental data published for the SS304 material (Kang et al., Constitutive modeling of strain range dependent cyclic hardening. Int J Plast 19 (2003) 1801–1819). Subsequently, the proposed cyclic plasticity model was applied to our own experimental data from uniaxial tests realized on 08Ch18N10T at room temperature. The new cyclic plasticity model can be calibrated by the relatively simple fitting procedure that is described in the paper. A comparison between the results of a numerical simulation and the results of real experiments demonstrates the robustness of the proposed approach.Web of Science98art. no. 83

    A ferrofluid based neural network: design of an analogue associative memory

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    We analyse an associative memory based on a ferrofluid, consisting of a system of magnetic nano-particles suspended in a carrier fluid of variable viscosity subject to patterns of magnetic fields from an array of input and output magnetic pads. The association relies on forming patterns in the ferrofluid during a trainingdphase, in which the magnetic dipoles are free to move and rotate to minimize the total energy of the system. Once equilibrated in energy for a given input-output magnetic field pattern-pair the particles are fully or partially immobilized by cooling the carrier liquid. Thus produced particle distributions control the memory states, which are read out magnetically using spin-valve sensors incorporated in the output pads. The actual memory consists of spin distributions that is dynamic in nature, realized only in response to the input patterns that the system has been trained for. Two training algorithms for storing multiple patterns are investigated. Using Monte Carlo simulations of the physical system we demonstrate that the device is capable of storing and recalling two sets of images, each with an accuracy approaching 100%.Comment: submitted to Neural Network

    Spaceborne memory organization Interim report

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    Associative memory applications in unmanned space vehicle
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