162 research outputs found

    Fault Modeling in Controllable Polarity Silicon Nanowire Circuits

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    Controllable polarity silicon nanowire transistors are among the promising candidates to replace current CMOS in the near future owing to their superior electrostatic characteristics and advanced functionalities. From a circuit testing point of view, it is unclear if the current CMOS and Fin-FET fault models are comprehensive enough to model all defects of controllable polarity nanowires. In this paper, we deal with the above problem using inductive fault analysis on three-independent-gate silicon nanowire FETs. Simulations revealed that the current fault models, i.e. stuck-open faults, are insufficient to cover all modes of operation. The newly introduced test algorithm for stuck open can adequately capture the malfunction behavior of controllable polarity logic gates in the presence of nanowire break and bridge on polarity terminals

    Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

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    Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon NanoWire FET (SiNWFET), is being introduced by the research community. These devices keep on pursuing Mooreâs Law by improving channel electrostatic controllability, thereby reducing the Off âstate leakage current. In addition to these improvements, recent developments introduced devices with enhanced capabilities, such as Controllable-Polarity (CP) SiNWFETs, which make them very interesting for compact logic cell and arithmetic circuits. At advanced technology nodes, the amount of physical controls, during the fabrication process of nanometer devices, cannot be precisely determined because of technology fluctuations. Consequently, the structural parameters of fabricated circuits can be significantly different from their nominal values. Moreover, giving an a-priori conclusion on the variability of advanced technologies for emerging nanoscale devices, is a difficult task and novel estimation methodologies are required. This is a necessity to guarantee the performance and the reliability of future integrated circuits. Statistical analysis of process variation requires a great amount of numerical data for nanoscale devices. This introduces a serious challenge for variability analysis of emerging technologies due to the lack of fast simulation models. One the one hand, the development of accurate compact models entails numerous tests and costly measurements on fabricated devices. On the other hand, Technology Computer Aided Design (TCAD) simulations, that can provide precise information about devices behavior, are too slow to timely generate large enough data set. In this research, a fast methodology for generating data set for variability analysis is introduced. This methodology combines the TCAD simulations with a learning algorithm to alleviate the time complexity of data set generation. Another formidable challenge for variability analysis of the large circuits is growing number of process variation sources. Utilizing parameterized models is becoming a necessity for chip design and verification. However, the high dimensionality of parameter space imposes a serious problem. Unfortunately, the available dimensionality reduction techniques cannot be employed for three main reasons of lack of accuracy, distribution dependency of the data points, and finally incompatibility with device and circuit simulators. We propose a novel technique of parameter selection for modeling process and performance variation. The proposed technique efficiently addresses the aforementioned problems. Appropriate testing, to capture manufacturing defects, plays an important role on the quality of integrated circuits. Compared to conventional CMOS, emerging nano-devices such as CP-SiNWFETs have different fabrication process steps. In this case, current fault models must be extended for defect detection. In this research, we extracted the possible fabrication defects, and then proposed a fault model for this technology. We also provided a couple of test methods for detecting the manufacturing defects in various types of CP-SiNWFET logic gates. Finally, we used the obtained fault model to build fault tolerant arithmetic circuits with a bunch of superior properties compared to their competitors

    From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires

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    Controllable-Polarity Silicon Nanowire Transistors (CP-SiNWFETs) are among the promising candidates to complement or even replace the current CMOS technology in the near future. Polarity control is a desirable property that allows the on-line configuration of the device polarity. CP-SiNWFETs result in smaller and faster logic gates unachievable with conventional CMOS implementations. From a circuit testing point of view, it is unclear if the current CMOS and FinFET fault models are comprehensive enough to model all the defects of CP-SiNWFETs. In this paper, we explore the possible manufacturing defects of this technology through analyzing the fabrication steps and the layout structure of logic gates. Using the obtained defects, we then evaluate their impacts on the performance and the functionality of CP-SiNWFET logic gates. Out of the results, we extend the current fault model to a new a hybrid model, including stuck-at ptype and stuck-at n-type, which can be efficiently used to test the logic circuits in this technology. The newly introduced fault model can be utilized to adequately capture the malfunction behavior of CP logic gates in the presence of nanowire break, bridge and float defects. Moreover, the simulations revealed that the current CMOS test methods are insufficient to cover all faults, i.e., stuck- Open. We proposed an appropriate test method to capture such faults as well

    Enhanced Hardware Security Using Charge-Based Emerging Device Technology

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    The emergence of hardware Trojans has largely reshaped the traditional view that the hardware layer can be blindly trusted. Hardware Trojans, which are often in the form of maliciously inserted circuitry, may impact the original design by data leakage or circuit malfunction. Hardware counterfeiting and IP piracy are another two serious issues costing the US economy more than $200 billion annually. A large amount of research and experimentation has been carried out on the design of these primitives based on the currently prevailing CMOS technology. However, the security provided by these primitives comes at the cost of large overheads mostly in terms of area and power consumption. The development of emerging technologies provides hardware security researchers with opportunities to utilize some of the otherwise unusable properties of emerging technologies in security applications. In this dissertation, we will include the security consideration in the overall performance measurements to fully compare the emerging devices with CMOS technology. The first approach is to leverage two emerging devices (Silicon NanoWire and Graphene SymFET) for hardware security applications. Experimental results indicate that emerging device based solutions can provide high level circuit protection with relatively lower performance overhead compared to conventional CMOS counterpart. The second topic is to construct an energy-efficient DPA-resilient block cipher with ultra low-power Tunnel FET. Current-mode logic is adopted as a circuit-level solution to countermeasure differential power analysis attack, which is mostly used in the cryptographic system. The third investigation targets on potential security vulnerability of foundry insider\u27s attack. Split manufacturing is adopted for the protection on radio-frequency (RF) circuit design

    Nanowire systems: technology and design (invited paper)

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    Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behavior of the nanostructure by selectively enabling one type of carriers. These transistors work as switches with electrically-programmable polarity and thus realize an exclusive or operation. The intrinsic higher expressive power of these FETs, as compared to standard CMOS, enables us to realize more efficient library cells, which we organize as tiles to realize circuits by regular arrays. This article surveys both the technology for double independent gate FETs as well as physical and logic design tools to realize digital systems with this fabrication technology

    Vertically-Stacked Silicon Nanowire Transistors with Controllable Polarity: a Robustness Study

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    Vertically-stacked Silicon NanoWire FETs (SiN- WFETs) with gate-all-around control are the natural and most advanced extension of FinFETs. At advanced technology nodes, due to Schottky contacts at channel interfaces, devices show an ambipolar behavior, i.e., the device exhibits n- and p-type charac- teristics simultaneously. This property, when controlled by an independent Double-Gate (DG) structure, can be exploited for logic computation, as it provides intrinsic XOR operation. Elec- trostatic doping of the transistor suppresses the need for dopant implantation at the source and drain regions, which potentially leads to a larger process variations immunity of the devices. In this paper, we propose a novel method based on Technology Computer-Aided Design (TCAD) simulations, enabling the predic- tion of emerging devices variability. This method is used within our DG-SiNWFET framework and shows that devices, whose polarity is controlled electrostatically, present better immunity to variations for some of their parameters, such as the off-current with 16Ă— less standard deviation

    Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

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    Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications

    Design Automation and Application for Emerging Reconfigurable Nanotechnologies

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    In the last few decades, two major phenomena have revolutionized the electronic industry – the ever-increasing dependence on electronic circuits and the Complementary Metal Oxide Semiconductor (CMOS) downscaling. These two phenomena have been complementing each other in a way that while electronics, in general, have demanded more computations per functional unit, CMOS downscaling has aptly supported such needs. However, while the computational demand is still rising exponentially, CMOS downscaling is reaching its physical limits. Hence, the need to explore viable emerging nanotechnologies is more imperative than ever. This thesis focuses on streamlining the existing design automation techniques for a class of emerging reconfigurable nanotechnologies. Transistors based on this technology exhibit duality in conduction, i.e. they can be configured dynamically either as a p-type or an n-type device on the application of an external bias. Owing to this dynamic reconfiguration, these transistors are also referred to as Reconfigurable Field-Effect Transistors (RFETs). Exploring and developing new technologies just like CMOS, require tackling two main challenges – first, design automation flow has to be modified to enable tailor- made circuit designs. Second, possible application opportunities should be explored where such technologies can outsmart the existing CMOS technologies. This thesis targets the above two objectives for emerging reconfigurable nanotechnologies by proposing approaches for enabling an Electronic Design Automation (EDA) flow for circuits based on RFETs and exploring hardware security as an application that exploits the transistor-level dynamic reconfiguration offered by this technology. This thesis explains the bottom-up approach adopted to propose a logic synthesis flow by identifying new logic gates and circuit design paradigms that can particularly exploit the dynamic reconfiguration offered by these novel nanotechnologies. This led to the subsequent need of finding natural Boolean logic abstraction for emerging reconfigurable nanotechnologies as it is shown that the existing abstraction of negative unate logic for CMOS technologies is sub-optimal for RFETs-based circuits. In this direction, it has been shown that duality in Boolean logic is a natural abstraction for this technology and can truly represent the duality in conduction offered by individual transistors. Finding this abstraction paved the way for defining suitable primitives and proposing various algorithms for logic synthesis and technology mapping. The following step is to explore compatible physical synthesis flow for emerging reconfigurable nanotechnologies. Using silicon nanowire-based RFETs, .lef and .lib files have been provided which can provide an end-to-end flow to generate .GDSII file for circuits exclusively based on RFETs. Additionally, new approaches have been explored to improve placement and routing for circuits based on reconfigurable nanotechnologies. It has been demonstrated how these approaches led to superior results as compared to the native flow meant for CMOS. Lastly, the unique property of transistor-level reconfiguration offered by RFETs is utilized to implement efficient Intellectual Property (IP) protection schemes against adversarial attacks. The ability to control the conduction of individual transistors can be argued as one of the impactful features of this technology and suitably fits into the paradigm of security measures. Prior security schemes based on CMOS technology often come with large overheads in terms of area, power, and delay. In contrast, RFETs-based hardware security measures such as logic locking, split manufacturing, etc. proposed in this thesis, demonstrate affordable security solutions with low overheads. Overall, this thesis lays a strong foundation for the two main objectives – design automation, and hardware security as an application, to push emerging reconfigurable nanotechnologies for commercial integration. Additionally, contributions done in this thesis are made available under open-source licenses so as to foster new research directions and collaborations.:Abstract List of Figures List of Tables 1 Introduction 1.1 What are emerging reconfigurable nanotechnologies? 1.2 Why does this technology look so promising? 1.3 Electronics Design Automation 1.4 The game of see-saw: key challenges vs benefits for emerging reconfigurable nanotechnologies 1.4.1 Abstracting ambipolarity in logic gate designs 1.4.2 Enabling electronic design automation for RFETs 1.4.3 Enhanced functionality: a suitable fit for hardware security applications 1.5 Research questions 1.6 Entire RFET-centric EDA Flow 1.7 Key Contributions and Thesis Organization 2 Preliminaries 2.1 Reconfigurable Nanotechnology 2.1.1 1D devices 2.1.2 2D devices 2.1.3 Factors favoring circuit-flexibility 2.2 Feasibility aspects of RFET technology 2.3 Logic Synthesis Preliminaries 2.3.1 Circuit Model 2.3.2 Boolean Algebra 2.3.3 Monotone Function and the property of Unateness 2.3.4 Logic Representations 3 Exploring Circuit Design Topologies for RFETs 3.1 Contributions 3.2 Organization 3.3 Related Works 3.4 Exploring design topologies for combinational circuits: functionality-enhanced logic gates 3.4.1 List of Combinational Functionality-Enhanced Logic Gates based on RFETs 3.4.2 Estimation of gate delay using the logical effort theory 3.5 Invariable design of Inverters 3.6 Sequential Circuits 3.6.1 Dual edge-triggered TSPC-based D-flip flop 3.6.2 Exploiting RFET’s ambipolarity for metastability 3.7 Evaluations 3.7.1 Evaluation of combinational logic gates 3.7.2 Novel design of 1-bit ALU 3.7.3 Comparison of the sequential circuit with an equivalent CMOS-based design 3.8 Concluding remarks 4 Standard Cells and Technology Mapping 4.1 Contributions 4.2 Organization 4.3 Related Work 4.4 Standard cells based on RFETs 4.4.1 Interchangeable Pull-Up and Pull-Down Networks 4.4.2 Reconfigurable Truth-Table 4.5 Distilling standard cells 4.6 HOF-based Technology Mapping Flow for RFETs-based circuits 4.6.1 Area adjustments through inverter sharings 4.6.2 Technology Mapping Flow 4.6.3 Realizing Parameters For The Generic Library 4.6.4 Defining RFETs-based Genlib for HOF-based mapping 4.7 Experiments 4.7.1 Experiment 1: Distilling standard-cells from a benchmark suite 4.7.2 Experiment 2A: HOF-based mapping . 4.7.3 Experiment 2B: Using the distilled standard-cells during mapping 4.8 Concluding Remarks 5 Logic Synthesis with XOR-Majority Graphs 5.1 Contributions 5.2 Organization 5.3 Motivation 5.4 Background and Preliminaries 5.4.1 Terminologies 5.4.2 Self-duality in NPN classes 5.4.3 Majority logic synthesis 5.4.4 Earlier work on XMG 5.4.5 Classification of Boolean functions 5.5 Preserving Self-Duality 5.5.1 During logic synthesis 5.5.2 During versatile technology mapping 5.6 Advanced Logic synthesis techniques 5.6.1 XMG resubstitution 5.6.2 Exact XMG rewriting 5.7 Logic representation-agnostic Mapping 5.7.1 Versatile Mapper 5.7.2 Support of supergates 5.8 Creating Self-dual Benchmarks 5.9 Experiments 5.9.1 XMG-based Flow 5.9.2 Experimental Setup 5.9.3 Synthetic self-dual benchmarks 5.9.4 Cryptographic benchmark suite 5.10 Concluding remarks and future research directions 6 Physical synthesis flow and liberty generation 6.1 Contributions 6.2 Organization 6.3 Background and Related Work 6.3.1 Related Works 6.3.2 Motivation 6.4 Silicon Nanowire Reconfigurable Transistors 6.5 Layouts for Logic Gates 6.5.1 Layouts for Static Functional Logic Gates 6.5.2 Layout for Reconfigurable Logic Gate 6.6 Table Model for Silicon Nanowire RFETs 6.7 Exploring Approaches for Physical Synthesis 6.7.1 Using the Standard Place & Route Flow 6.7.2 Open-source Flow 6.7.3 Concept of Driver Cells 6.7.4 Native Approach 6.7.5 Island-based Approach 6.7.6 Utilization Factor 6.7.7 Placement of the Island on the Chip 6.8 Experiments 6.8.1 Preliminary comparison with CMOS technology 6.8.2 Evaluating different physical synthesis approaches 6.9 Results and discussions 6.9.1 Parameters Which Affect The Area 6.9.2 Use of Germanium Nanowires Channels 6.10 Concluding Remarks 7 Polymporphic Primitives for Hardware Security 7.1 Contributions 7.2 Organization 7.3 The Shift To Explore Emerging Technologies For Security 7.4 Background 7.4.1 IP protection schemes 7.4.2 Preliminaries 7.5 Security Promises 7.5.1 RFETs for logic locking (transistor-level locking) 7.5.2 RFETs for split manufacturing 7.6 Security Vulnerabilities 7.6.1 Realization of short-circuit and open-circuit scenarios in an RFET-based inverter 7.6.2 Circuit evaluation on sub-circuits 7.6.3 Reliability concerns: A consequence of short-circuit scenario 7.6.4 Implication of the proposed security vulnerability 7.7 Analytical Evaluation 7.7.1 Investigating the security promises 7.7.2 Investigating the security vulnerabilities 7.8 Concluding remarks and future research directions 8 Conclusion 8.1 Concluding Remarks 8.2 Directions for Future Work Appendices A Distilling standard-cells B RFETs-based Genlib C Layout Extraction File (.lef) for Silicon Nanowire-based RFET D Liberty (.lib) file for Silicon Nanowire-based RFET

    Polarity Control at Runtime:from Circuit Concept to Device Fabrication

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    Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to overcome physical limitations affecting conventional CMOS technology. Here, we propose a novel Schottky barrier device concept based on electrostatic polarity control. Specifically, this device can behave as p- or n-type by simply changing an electric input bias. This device combines More-than-Moore and Beyond CMOS elements to create an efficient technology with a viable path to Very Large Scale Integration (VLSI). This thesis proposes a device/circuit/architecture co-optimization methodology, where aspects of device technology to logic circuit and system design are considered. At device level, a full CMOS compatible fabrication process is presented. In particular, devices are demonstrated using vertically stacked, top-down fabricated silicon nanowires with gate-all-around electrode geometry. Source and drain contacts are implemented using nickel silicide to provide quasi-symmetric conduction of either electrons or holes, depending on the mode of operation. Electrical measurements confirm excellent performance, showing Ion/Ioff > 10^7 and subthreshold slopes approaching the thermal limit, SS ~ 60mV/dec (~ 63mV/dec) for n(p)-type operation in the same physical device. Moreover, the shown devices behave as p-type for a polarization bias (polarity gate voltage, Vpg) of 0V, and n-type for a Vpg = 1V, confirming their compatibility with multi-level static logic circuit design. At logic gate level, two- and four-transistor logic gates are fabricated and tested. In particular, the first fully functional, two-transistor XOR logic gate is demonstrated through electrical characterization, confirming that polarity control can enable more compact logic gate design with respect to conventional CMOS. Furthermore, we show for the first time fabricated four- transistors logic gates that can be reconfigured as NAND or XOR only depending on their external connectivity. In this case, logic gates with full swing output range are experimentally demonstrated. Finally, single device and mixed-mode TCAD simulation results show that lower Vth and more optimized polarization ranges can be expected in scaled devices implementing strain or high-k technologies. At circuit and system level, a full semi-custom logic circuit design tool flow was defined and configured. Using this flow, novel logic libraries based on standard cells or regular gate fabrics were compared with standard CMOS. In this respect, results were shown in comparison to CMOS, including a 40% normalized area-delay product reduction for the analyzed standard cell libraries, and improvements of over 2Ă— in terms of normalized delay for regular Controlled Polarity (CP)-based cells in the context of Structured ASICs. These results, in turn, confirm the interest in further developing and optimizing CP devices, as promising candidates for future digital circuit technology

    Modelling and Simulation of Silicon Nanowire-Based Electron Devices for Computation and Sensing

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    Silicon Nanowires (SiNWs) are considered the fundamental component blocks of future nanoelectronics. Many interesting properties have gained them such a prominent position in the investigation in recent decades. Large surface-to-volume ratio, bio-compatibility, band-gap tuning are among the most appealing features of SiNWs. More importantly, in the ongoing process of dimension miniaturization, SiNWs compatibility with the existing and reliable silicon technology stands as a fundamental advantage. Consequently, the employment of SiNWs spred in several application fields: from computational logic where SiNWs are used to realize transistors, to bio-chemical sensing and nanophotonic applications. In this thesis work we concentrate our attention on the employment of SiNWs in computational logic and bio-chemical sensing. In particular, we aim at giving a contribution in the modelling and simulation of SiNW-based electron devices. Given the current intense investigation of new devices, the modelling of their electrical behaviour is strongly required. On one side, modelling procedures could give an insight on the physical phenomena of transport in nanometer scale systems where quantum effects are dominant. On the other side, the availability of compact models for actual devices can be of undeniable help in the future design process. This work is divided into two parts. After a brief introduction on Silicon Nanowires, the main fabrication techniques and their properties, the first part is dedicated to the modelling of Multiple-Independent Gate Transistors, a new generation of devices arisen from the composition of Gate-All-Around Transistors, finFETs and Double-Gate Transistors. Interesting applications resulting from their employment are Vertically-stacked Silicon Nanowire FETs, known to have an ambipolar behaviour, and Silicon Nanowire Arrays. We will present a compact numerical model for composite Multiple-Independent Gate Transistors which allows to compute current and voltages in complex structures. Validation of the model through simulation proves the accuracy and the computational efficiency of the resulting model. The second part of the thesis work is instead devoted to Silicon Nanowires for bio-chemical sensing. In this respect, major attention is given to Porous Silicon (PS), a non-crystalline material which demonstrated peculiar features apt for sensing. Given its not regular microscopic morphology made of a complex network of crystalline and non-crystalline regions, PS has large surface-to-volume ratio and a relevant chemical reactivity at room temperature. In this work we start from the fabrication of PS nanowires at Istituto Nazionale di Ricerca Metrologica in Torino (I.N.Ri.M.) to devise two main models for PSNWs which can be used to understand the effects of porosity on electron transport in these structures. The two modelling procedures have different validity regimes and efficiently take into account quantum effects. Their description and results are presented. The last part of the thesis is devoted to the impact of surface interaction of molecular compounds and dielectric materials on the transport properties of SiNWs. Knowing how molecules interact with silicon atoms and how the conductance of the wire is affected is indeed the core of SiNWs used for bio-chemical sensing. In order to study the phenomena involved, we performed ab-initio simulations of silicon surface interacting with SO2 and NO2 via the SIESTA package, implementing DFT code. The calculations were performed at Institut de Ciencia De Materials de Barcelona (ICMAB-CSIC) using their computational resources. The results of this simulation step are then exploited to perform simulation of systems made of an enormous quantity of atoms. Due to their large dimensions, atomistic simulations are not affordable and other approaches are necessary. Consequently, calculations with physics-based softwares on a larger spatial scale were adopted. The description of the obtained results occupies the last part of the work together with the discussion of the main theoretical insight gained with the conducted study
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