Design considerations of a nonvolatile accumulator-based 8-bit processor

The rise of the Internet of Things (IoT) and theconstant growth of portable electronics have leveraged the con-cern with energy consumption. Nonvolatile memory (NVM)emerged as a solution to mitigate the problem due to its abilityto retain data on sleep mode without a power supply. Non-volatile processors (NVPs) may further improve energy savingby using nonvolatile flip-flops (NVFFs) to store system state,allowing the device to be turned off when idle and resume ex-ecution instantly after power-on. In view of the potential pre-sented by NVPs, this work describes the initial steps to imple-ment a nonvolatile version of Neander, a hypothetical processorcreated for educational purposes. First, we implemented Ne-ander in Register Transfer Level (RTL), separating the com-binational logic from the sequential elements. Then, the lat-ter was replaced by circuit-level descriptions of volatile flip-flops. We then validated this implementation by employinga mixed-signal simulation over a set of benchmarks. Resultshave shown the expected behavior for the whole instructionset. Then, we implemented circuit-level descriptions of mag-netic tunnel junction (MTJ) based nonvolatile flip-flops, usingan open-source MTJ model. These elements were exhaustivelyvalidated using electrical simulations. With these results, weintend to carry on the implementation and fully equip our pro-cessor with nonvolatile features such as instant wake-up

Energy efficient hybrid computing systems using spin devices

Emerging spin-devices like magnetic tunnel junctions (MTJ\u27s), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ∼20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode\u27 processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ∼100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters

A spintronic Huxley-Hodgkin-analogue neuron implemented with a single magnetic tunnel junction

Spiking neural networks aim to emulate the brain's properties to achieve similar parallelism and high-processing power. A caveat of these neural networks is the high computational cost to emulate, while current proposals for analogue implementations are energy inefficient and not scalable. We propose a device based on a single magnetic tunnel junction to perform neuron firing for spiking neural networks without the need of any resetting procedure. We leverage two physics, magnetism and thermal effects, to obtain a bio-realistic spiking behavior analogous to the Huxley-Hodgkin model of the neuron. The device is also able to emulate the simpler Leaky-Integrate and Fire model. Numerical simulations using experimental-based parameters demonstrate firing frequency in the MHz to GHz range under constant input at room temperature. The compactness, scalability, low cost, CMOS-compatibility, and power efficiency of magnetic tunnel junctions advocate for their broad use in hardware implementations of spiking neural networks.Comment: 23 pages, 6 figures, 2 table

Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems

With the scaling of CMOS technology, the proportion of the leakage power to total power consumption increases. Leakage may account for almost half of total power consumption in high performance processors. In order to reduce the leakage power, there is an increasing interest in using nonvolatile storage devices for memory applications. Among various promising nonvolatile memory elements, spin-transfer torque magnetic RAM (STT-MRAM) is identified as one of the most attractive alternatives to conventional SRAM. However, several design challenges of STT-MRAM such as shared read and write current paths, single-ended sensing, and high dynamic power are major challenges to be overcome to make it suitable for on-chip memories. To mitigate such problems, we propose a domain wall coupling based spin-transfer torque (DWCSTT) device for on-chip caches. Our proposed DWCSTT bit-cell decouples the read and the write current paths by the electrically-insulating magnetic coupling layer so that we can separately optimize read operation without having an impact on write-ability. In addition, the complementary polarizer structure in the read path of the DWCSTT device allows DWCSTT to enable self-referenced differential sensing. DWCSTT bit-cells improve the write power consumption due to the low electrical resistance of the write current path. Furthermore, we also present three different bit-cell level design techniques of Spin-Orbit Torque MRAM (SOT-MRAM) for alleviating some of the inefficiencies of conventional magnetic memories while maintaining the advantages of spin-orbit torque (SOT) based novel switching mechanism such as low write current requirement and decoupled read and write current path. Our proposed SOT-MRAM with supporting dual read/write ports (1R/1W) can address the issue of high-write latency of STT-MRAM by simultaneous 1R/1W accesses. Second, we propose a new type of SOT-MRAM which uses only one access transistor along with a Schottky diode in order to mitigate the area-overhead caused by two access transistors in conventional SOT-MRAM. Finally, a new design technique of SOT-MRAM is presented to improve the integration density by utilizing a shared bit-line structure

Algorithm and Hardware Co-design for Learning On-a-chip

abstract: Machine learning technology has made a lot of incredible achievements in recent years. It has rivalled or exceeded human performance in many intellectual tasks including image recognition, face detection and the Go game. Many machine learning algorithms require huge amount of computation such as in multiplication of large matrices. As silicon technology has scaled to sub-14nm regime, simply scaling down the device cannot provide enough speed-up any more. New device technologies and system architectures are needed to improve the computing capacity. Designing specific hardware for machine learning is highly in demand. Efforts need to be made on a joint design and optimization of both hardware and algorithm. For machine learning acceleration, traditional SRAM and DRAM based system suffer from low capacity, high latency, and high standby power. Instead, emerging memories, such as Phase Change Random Access Memory (PRAM), Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), and Resistive Random Access Memory (RRAM), are promising candidates providing low standby power, high data density, fast access and excellent scalability. This dissertation proposes a hierarchical memory modeling framework and models PRAM and STT-MRAM in four different levels of abstraction. With the proposed models, various simulations are conducted to investigate the performance, optimization, variability, reliability, and scalability. Emerging memory devices such as RRAM can work as a 2-D crosspoint array to speed up the multiplication and accumulation in machine learning algorithms. This dissertation proposes a new parallel programming scheme to achieve in-memory learning with RRAM crosspoint array. The programming circuitry is designed and simulated in TSMC 65nm technology showing 900X speedup for the dictionary learning task compared to the CPU performance. From the algorithm perspective, inspired by the high accuracy and low power of the brain, this dissertation proposes a bio-plausible feedforward inhibition spiking neural network with Spike-Rate-Dependent-Plasticity (SRDP) learning rule. It achieves more than 95% accuracy on the MNIST dataset, which is comparable to the sparse coding algorithm, but requires far fewer number of computations. The role of inhibition in this network is systematically studied and shown to improve the hardware efficiency in learning.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Magnetic racetrack memory: from physics to the cusp of applications within a decade

Racetrack memory (RTM) is a novel spintronic memory-storage technology that has the potential to overcome fundamental constraints of existing memory and storage devices. It is unique in that its core differentiating feature is the movement of data, which is composed of magnetic domain walls (DWs), by short current pulses. This enables more data to be stored per unit area compared to any other current technologies. On the one hand, RTM has the potential for mass data storage with unlimited endurance using considerably less energy than today's technologies. On the other hand, RTM promises an ultrafast nonvolatile memory competitive with static random access memory (SRAM) but with a much smaller footprint. During the last decade, the discovery of novel physical mechanisms to operate RTM has led to a major enhancement in the efficiency with which nanoscopic, chiral DWs can be manipulated. New materials and artificially atomically engineered thin-film structures have been found to increase the speed and lower the threshold current with which the data bits can be manipulated. With these recent developments, RTM has attracted the attention of the computer architecture community that has evaluated the use of RTM at various levels in the memory stack. Recent studies advocate RTM as a promising compromise between, on the one hand, power-hungry, volatile memories and, on the other hand, slow, nonvolatile storage. By optimizing the memory subsystem, significant performance improvements can be achieved, enabling a new era of cache, graphical processing units, and high capacity memory devices. In this article, we provide an overview of the major developments of RTM technology from both the physics and computer architecture perspectives over the past decade. We identify the remaining challenges and give an outlook on its future

Microarchitectures pour la sauvegarde incrémentale, robuste et efficace dans les systèmes à alimentation intermittente

Embedded devices powered with environmental energy harvesting, have to sustain computation while experiencing unexpected power failures.To preserve the progress across the power interruptions, Non-Volatile Memories (NVMs) are used to quickly save the state. This dissertation first presents an overview and comparison of different NVM technologies, based on different surveys from the literature. The second contribution we propose is a dedicated backup controller, called Freezer, that implements an on-demand incremental backup scheme. This can make the size of the backup 87.7% smaller then a full-memory backup strategy from the state of the art (SoA). Our third contribution addresses the problem of corruption of the state, due to interruptions during the backup process. Two algorithms are presented, that improve on the Freezer incremental backup process, making it robust to errors, by always guaranteeing the existence of a correct state, that can be restored in case of backup errors. These two algorithms can consume 23% less energy than the usual double-buffering technique used in the SoA. The fourth contribution, addresses the scalability of our proposed approach. Combining Freezer with Bloom filters, we introduce a backup scheme that can cover much larger address spaces, while achieving a backup size which is half the size of the regular Freezer approach.Les appareils embarqués alimentés par la récupération d'énergie environnementale doivent maintenir le calcul tout en subissant des pannes de courant inattendues. Pour préserver la progression à travers les interruptions de courant, des mémoires non volatiles (NVM) sont utilisées pour enregistrer rapidement l'état. Cette thèse présente d'abord une vue d'ensemble et une comparaison des différentes technologies NVM, basées sur différentes enquêtes de la littérature. La deuxième contribution que nous proposons est un contrôleur de sauvegarde dédié, appelé Freezer, qui implémente un schéma de sauvegarde incrémentale à la demande. Cela peut réduire la taille de la sauvegarde de 87,7% à celle d'une stratégie de sauvegarde à mémoire complète de l'état de l'art. Notre troisième contribution aborde le problème de la corruption de l'état, due aux interruptions pendant le processus de sauvegarde. Deux algorithmes sont présentés, qui améliorent le processus de sauvegarde incrémentale de Freezer, le rendant robuste aux erreurs, en garantissant toujours l'existence d'un état correct, qui peut être restauré en cas d'erreurs de sauvegarde. Ces deux algorithmes peuvent consommer $23\%$ d'énergie en moins que la technique de ``double-buffering'' utilisée dans l'état de l'art. La quatrième contribution porte sur l'évolutivité de notre approche proposée. En combinant Freezer avec des filtres Bloom, nous introduisons un schéma de sauvegarde qui peut couvrir des espaces d'adressage beaucoup plus grands, tout en obtenant une taille de sauvegarde qui est la moitié de la taille de l'approche Freezer habituelle