Coherent optical implementations of the fast Fourier transform and their comparison to the optical implementation of the quantum Fourier transform

Optical structures to implement the discrete Fourier transform (DFT) and fast Fourier transform (FFT) algorithms for discretely sampled data sets are considered. In particular, the decomposition of the FFT algorithm into the basic Butterfly operations is described, as this allows the algorithm to be fully implemented by the successive coherent addition and subtraction of two wavefronts (the subtraction being performed after one has been appropriately phase shifted), so facilitating a simple and robust hardware implementation based on waveguided hybrid devices as employed in coherent optical detection modules. Further, a comparison is made to the optical structures proposed for the optical implementation of the quantum Fourier transform and they are shown to be very similar

Superpositional Quantum Network Topologies

We introduce superposition-based quantum networks composed of (i) the classical perceptron model of multilayered, feedforward neural networks and (ii) the algebraic model of evolving reticular quantum structures as described in quantum gravity. The main feature of this model is moving from particular neural topologies to a quantum metastructure which embodies many differing topological patterns. Using quantum parallelism, training is possible on superpositions of different network topologies. As a result, not only classical transition functions, but also topology becomes a subject of training. The main feature of our model is that particular neural networks, with different topologies, are quantum states. We consider high-dimensional dissipative quantum structures as candidates for implementation of the model.Comment: 10 pages, LaTeX2

Model-independent determination of the carrier multiplication time constant in CdSe nanocrystals

The experimental determination of the carrier multiplication (CM) time constant is complicated by the fact that this process occurs within the initial few hundreds of femtoseconds after excitation and, in transient-absorption experiments, cannot be separated from the buildup time of the 1p-state population. This work provides an accurate theoretical determination of the electron relaxation lifetime during the last stage of the p-state buildup, in CdSe nanocrystals, in the presence of a single photogenerated hole (no CM) and of a hole plus an additional electron–hole pair (following CM). From the invariance of the 1p buildup time observed experimentally for excitations above and below the CM threshold producing hot carriers with the same average per-exciton excess energy, and the calculated corresponding variations in the electron decay time in the two cases, an estimate is obtained for the carrier multiplication time constant. Unlike previous estimates reported in the literature so far, this result is model-independent, i.e., is obtained without making any assumption on the nature of the mechanism governing carrier multiplication. It is then compared with the time constant calculated, as a function of the excitation energy, assuming an impact-ionization-like process for carrier multiplication (DCM). The two results are in good agreement and show that carrier multiplication can occur on timescales of the order of tens of femtoseconds at energies close to the observed onset. These findings, which are compatible with the fastest lifetime estimated experimentally, confirm the suitability of the impact-ionization model to explain carrier multiplication in CdSe nanocrystals

Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics

Being a source of clean and renewable energy, the possibility to convert solar radiation in electric current with high efficiency is one of the most important topics of modern scientific research. Currently the exploitation of interaction between nanocrystals seems to be a promising route to foster the establishment of third generation photovoltaics. Here we adopt a fully ab-initio scheme to estimate the role of nanoparticle interplay on the carrier multiplication dynamics of interacting silicon nanocrystals. Energy and charge transfer-based carrier multiplication events are studied as a function of nanocrystal separation showing benefits induced by the wavefunction sharing regime. We prove the relevance of these recombinative mechanisms for photovoltaic applications in the case of silicon nanocrystals arranged in dense arrays, quantifying at an atomistic scale which conditions maximize the outcome.Comment: Supplementary materials are freely available onlin