Ball lens embedded through-package via to enable backside coupling between silicon photonics interposer and board-level interconnects

Development of an efficient and densely integrated optical coupling interface for silicon photonics based board-level optical interconnects is one of the key challenges in the domain of 2.5D/3D electro-optic integration. Enabling high-speed on-chip electro-optic conversion and efficient optical transmission across package/board-level short-reach interconnections can help overcome the limitations of a conventional electrical I/O in terms of bandwidth density and power consumption in a high-performance computing environment. In this context, we have demonstrated a novel optical coupling interface to integrate silicon photonics with board-level optical interconnects. We show that by integrating a ball lens in a via drilled in an organic package substrate, the optical beam diffracted from a downward directionality grating on a photonics chip can be coupled to a board-level polymer multimode waveguide with a good alignment tolerance. A key result from the experiment was a 14 chip-to-package 1-dB lateral alignment tolerance for coupling into a polymer waveguide with a cross-section of 20 x 25. An in-depth analysis of loss distribution across several interfaces was done and a -3.4 dB coupling efficiency was measured between the optical interface comprising of output grating, ball lens and polymer waveguide. Furthermore, it is shown that an efficiency better than -2 dB can be achieved by tweaking few parameters in the coupling interface. The fabrication of the optical interfaces and related measurements are reported and verified with simulation results

Photonic integration enabling new multiplexing concepts in optical board-to-board and rack-to-rack interconnects

New broadband applications are causing the datacenters to proliferate, raising the bar for higher interconnection speeds. So far, optical board-to-board and rack-to-rack interconnects relied primarily on low-cost commodity optical components assembled in a single package. Although this concept proved successful in the first generations of optical-interconnect modules, scalability is a daunting issue as signaling rates extend beyond 25 Gb/s. In this paper we present our work towards the development of two technology platforms for migration beyond Infiniband enhanced data rate (EDR), introducing new concepts in board-to-board and rack-to-rack interconnects. The first platform is developed in the framework of MIRAGE European project and relies on proven VCSEL technology, exploiting the inherent cost, yield, reliability and power consumption advantages of VCSELs. Wavelength multiplexing, PAM-4 modulation and multi-core fiber (MCF) multiplexing are introduced by combining VCSELs with integrated Si and glass photonics as well as BiCMOS electronics. An in-plane MCF-to-SOI interface is demonstrated, allowing coupling from the MCF cores to 340x400 nm Si waveguides. Development of a low-power VCSEL driver with integrated feed-forward equalizer is reported, allowing PAM-4 modulation of a bandwidth-limited VCSEL beyond 25 Gbaud. The second platform, developed within the frames of the European project PHOXTROT, considers the use of modulation formats of increased complexity in the context of optical interconnects. Powered by the evolution of DSP technology and towards an integration path between inter and intra datacenter traffic, this platform investigates optical interconnection system concepts capable to support 16QAM 40GBd data traffic, exploiting the advancements of silicon and polymer technologies

Heterogeneous Integration on Silicon-Interconnect Fabric using fine-pitch interconnects (≤10 �m)

Today, the ever-growing data-bandwidth demand is pushing the boundaries of the traditional printed circuit board (PCB) based integration schemes. Moreover, with the apparent saturation of semiconductor scaling, commonly called Moore's law, system scaling warrants a paradigm shift in packaging technologies, assembly techniques, and integration methodologies. In this work, a superior alternative to PCBs called the Silicon-Interconnect Fabric (Si-IF) is investigated. The Si-IF is a silicon-based, package-less, fine-pitch, highly scalable, heterogeneous integration platform for wafer-scale systems. In this technology, unpackaged dielets are assembled on the Si-IF at small inter-dielet spacings (≤100 �m) using fine-pitch (≤10 �m) die-to-substrate interconnects. A novel assembly process using a solder-less direct metal-metal (gold-gold and copper-copper) thermal compression bonding was developed. Using this process, sub-10 �m pitch interconnects with a low specific contact resistance of ≤0.7 Ω-�m2 were successfully demonstrated. Because of the tightly packed Si-IF assembly, the communication links between the neighboring dies are short (≤500 �m) with low loss (≤2 dB), comparable to on-chip connections. Consequently, simple buffers can transfer data between dies using a Simple Universal Parallel intERface for chips (SuperCHIPS) at low latency (<30 ps), low energy per bit (≤0.03 pJ/b), and high data-rates (up to 10 Gbps/link), corresponding to an aggregate bandwidth up to 8 Tbps/mm. The benefits of the SuperCHIPS protocol were experimentally demonstrated to provide 5-90X higher data-bandwidth, 8-30X lower latency, and 5-40X lower energy per bit compared to existing integration schemes. This dissertation addresses the assembly technology and communication protocols of the Si-IF technology

Flip Chip Die-to-Wafer Bonding Review: Gaps to High Volume Manufacturing

Flip chip die-to-wafer bonding faces challenges for industry adoption due to a variety of technical gaps or process integration factors that are not fully developed to high volume manufacturing (HVM) maturity. In this paper,flip-chip and wire bonding are compared, then flip-chip bonding techniques are compared to examine advantages for scaling and speed. Specific recent 3-year trends in flip-chip die-to-wafer bonding are reviewed to address the key gaps and challenges to HVM adoption. Finally, some thoughts on the care needed by the packaging technology for successful HVM introduction are reviewed

Programmable photonics : an opportunity for an accessible large-volume PIC ecosystem

We look at the opportunities presented by the new concepts of generic programmable photonic integrated circuits (PIC) to deploy photonics on a larger scale. Programmable PICs consist of waveguide meshes of tunable couplers and phase shifters that can be reconfigured in software to define diverse functions and arbitrary connectivity between the input and output ports. Off-the-shelf programmable PICs can dramatically shorten the development time and deployment costs of new photonic products, as they bypass the design-fabrication cycle of a custom PIC. These chips, which actually consist of an entire technology stack of photonics, electronics packaging and software, can potentially be manufactured cheaper and in larger volumes than application-specific PICs. We look into the technology requirements of these generic programmable PICs and discuss the economy of scale. Finally, we make a qualitative analysis of the possible application spaces where generic programmable PICs can play an enabling role, especially to companies who do not have an in-depth background in PIC technology

Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with 10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.Comment: 13 pages, 5 figure, journal publicatio

Investigation into the wafer-scale integration of fine-grain parallel processing computer systems

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis investigates the potential of wafer-scale integration (WSI) for the implementation of low-cost fine-grain parallel processing computer systems. As WSI is a relatively new subject, there was little work on which to base investigations. Indeed, most WSI architectures existed only as untried and sometimes vague proposals. Accordingly, the research strategy approached this problem by identifying a representative WSI structure and architecture on which to base investigations. An analysis of architectural proposals identified associative memory to be general purpose parallel processing component used in a wide range of WSI architectures. Furthermore, this analysis provided a set of WSI-level design requirements to evaluate the sustainability of different architectures as research vehicles. The WSI-ASP (WASP) device, which has a large associative memory as its main component is shown to meet these requirements and hence was chosen as the research vehicle. Consequently, this thesis addresses WSI potential through an in-depth investigation into the feasibility of implementing a large associative memory for the WASP device that meets the demanding technological constraints of WSI. Overall, the thesis concludes that WSI offers significant potential for the implementation of low-cost fine-grain parallel processing computer systems. However, due to the dual constraints of thermal management and the area required for the power distribution network, power density is a major design constraint in WSI. Indeed, it is shown that WSI power densities need to be an order of magnitude lower than VLSI power densities. The thesis demonstrates that for associative memories at least, VLSI designs are unsuited to implementation in WSI. Rather, it is shown that WSI circuits must be closely matched to the operational environment to assure suitable power densities. These circuits are significantly larger than their VLSI equivalents. Nonetheless, the thesis demonstrates that by concentrating on the most power intensive circuits, it is possible to achieve acceptable power densities with only a modest increase in area overheads.SER

Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach

Ever growing demands for portability and functionality have always governed the electronic technology innovations. IC downscaling with Moore s law and system miniaturization with System-On-Package (SOP) paradigm has resulted and will continue to result in ultraminiaturized systems with unprecedented functionality at reduced cost. The trend towards 3D silicon system integration is expected to downscale IC I/O pad pitches from 40µm to 1- 5 µm in future. Device- to- system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. As supply currents will increase upto 220 A by 2012, the current density will exceed the maximum allowable current density of solders. The intrinsic delay and electromigration in solders are other daunting issues that become critical at nanometer size technology nodes. In addition, formation of intermetallics is also a bottleneck that poses significant mechanical issues. Recently, many research groups have investigated various techniques for copper-copper direct bonding. Typically, bonding is carried out at 400oC for 30 min followed by annealing for 30 min. High thermal budget in such process makes it less attractive for integrated systems because of the associated process incompatibilities. In the present study, copper-copper bonding at ultra fine-pitch using advanced nano-conductive and non-conductive adhesives is evaluated. The proposed copper-copper based interconnects using advanced conductive and non-conductive adhesives will be a new fundamental and comprehensive paradigm to solve all the four barriers: 1) I/O pitch 2) Electrical performance 3) Reliability and 4) Cost. This thesis investigates the mechanical integrity and reliability of copper-copper bonding using advanced adhesives through test vehicle fabrication and reliability testing. Test vehicles were fabricated using low cost electro-deposition techniques and assembled onto glass carrier. Experimental results show that proposed copper-copper bonding using advanced adhesives could potentially meet all the system performance requirements for the emerging micro/nano-systems.M.S.Committee Chair: Prof. Rao R Tummala; Committee Member: Dr. Jack Moon; Committee Member: Dr. P M Ra

Design, Extraction, and Optimization Tool Flows and Methodologies for Homogeneous and Heterogeneous Multi-Chip 2.5D Systems

Chip and packaging industries are making significant progress in 2.5D design as a result of increasing popularity of their application. In advanced high-density 2.5D packages, package redistribution layers become similar to chip Back-End-of-Line routing layers, and the gap between them scales down with pin density improvement. Chiplet-package interactions become significant and severely affect system performance and reliability. Moreover, 2.5D integration offers opportunities to apply novel design techniques. The traditional die-by-die design approach neither carefully considers these interactions nor fully exploits the cross-boundary design opportunities. This thesis presents chiplet-package cross-boundary design, extraction, analysis, and optimization tool flows and methodologies for high-density 2.5D packaging technologies. A holistic flow is presented that can capture all parasitics from chiplets and the package and improve system performance through iterative optimizations. Several design techniques are demonstrated for agile development and quick turn-around time. To validate the flow in silicon, a chip was taped out and studied in TSMC 65nm technology. As the holistic flow cannot handle heterogeneous technologies, in-context flows are presented. Three different flavors of the in-context flow are presented, which offer trade-offs between scalability and accuracy in heterogeneous 2.5D system designs. Inductance is an inseparable part of a package design. A holistic flow is presented that takes package inductance into account in timing analysis and optimization steps. Custom CAD tools are developed to make these flows compatible with the industry standard tools and the foundry model. To prove the effectiveness of the flows several design cases of an ARM Cortex-M0 are implemented for comparitive study

All-copper chip-to-substrate interconnects for high performance integrated circuit devices

In this work, all-copper connections between silicon microchips and substrates are developed. The semiconductor industry advances the transistor density on a microchip based on the roadmap set by Moore's Law. Communicating with a microprocessor which has nearly one billion transistors is a daunting challenge. Interconnects from the chip to the system (i.e. memory, graphics, drives, power supply) are rapidly growing in number and becoming a serious concern. Specifically, the solder ball connections that are formed between the chip itself and the package are challenging to make and still have acceptable electrical and mechanical performance. These connections are being required to increase in number, increase in power current density, and increase in off-chip operating frequency. Many of the challenges with using solder connections are limiting these areas. In order to advance beyond the limitations of solder for electrical and mechanical performance, a novel approach to creating all-copper connections from the chip-to-substrate has been developed. The development included characterizing the electroless plating and annealing process used to create the connections, designing these connections to be compatible with the stress requirements for fragile low-k devices, and finally by improving the plating/annealing process to become process time competitive with solder. It was found that using a commercially available electroless copper bath for the plating, followed by annealing at 180 C for 1 hour, the shear strength of the copper-copper bond was approximately 165 MPa. This work resulted in many significant conclusions about the mechanism for bonding in the all-copper process and the significance of materials and geometry on the mechanical design for these connections.Ph.D.Committee Chair: Kohl, Paul; Committee Member: Bidstrup Allen, Sue Ann; Committee Member: Fuller, Thomas; Committee Member: Hesketh, Peter; Committee Member: Hess, Dennis; Committee Member: Meindl, Jame