낮은 임계 가속도를 가지는 실리콘 기반 MEMS 가속도 스위치에 관한 연구

학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 김용권.Abstract In this paper, MEMS acceleration switch with low threshold acceleration below 10 g and fine environmental characteristics are developed. Limits of the previously reported low-g MEMS switches were addressed in terms of environmental test issues and the solutions for them were suggested and integrated in the proposed low-g MEMS acceleration switch. Fabrication process consists of one silicon-on-insulator substrate and two glass substrates for base and package, respectively. Single-crystalline silicon was chosen as the structural material for high thermal stability and stress-free structure. After the fabrication, height profiles of the free-hanging proof masses were measured to show that the fabricated switches does not suffer from stress problems. The size of single switch was measured as 2150 x 4240 x 1180 µm3 and the average proof mass, initial gap, and the spring constant was 307.38 µg, 6.39 µm, and 3.29 N/m, respectively. The calculated threshold acceleration thus was 6.98 g. In the electrostatic operation test, the response time of the switch was measured to be shorter than 1.2 ms and the minimum contact resistance was 8.5 Ω at the contact force of 284 µN. Life cycle test was carried out to show that the developed switch could operate more than 10,000 cycles without failure. Rotation-table experiment was carried out in sequence to reveal that the switch operates at 6.61 g. The error analysis was carried out in the consideration of the off-axis force generated during the rotation-table experiment. From the experimental values, the off-axis force was calculated as 2.091 μN and the resulting reduction in the initial switching gap was simulated as 0.236 μm. The reduced threshold acceleration thus was estimated to be 6.512 g, which agrees well with the measured threshold acceleration value of 6.61 g. Rotation-table test using another switch was conducted to model the relation between the off-axis force and the operating acceleration of the developed switch. Least squares method was used in the analysis and the original threshold acceleration (a_th) of the switch was calculated as 6.16325 g. The error rate (ε) due to the off-axis force was calculated as -0.22693 g/µN. The modeled operating acceleration of the switch in terms of the off-axis force matched well with the measurements, showing the maximum error less than 1.6%. Heating, sealing, high-g, and impact tests were conducted in sequence to validate the environmental characteristics of the switch. Test condition of 80 °C for 6 hours were adopted for heating test and the tested switch operated more than 200 cycles normally after the test. For sealing test, gross leak test using penetrant dye (Rhodamine B) and fine leak test using tracer gas (helium) were conducted sequentially. 10 samples were put into both of the tests. In the gross leak test, no signs of dye penetration were observed after pressurizing the samples in the dye solution. The tested switches were then put into the fine leak test. In the fine leak test, helium leak rates were measured and all of the tested samples showed leak rate lower than 5.8x10-8 atm cc/s He, which is the reject limit provided by MIL-STD-883E. High-g test and drop impact test were also performed to validate the effectiveness of the displacement-restricting structure. As a result of the high-g test, the developed switch was able to operate without breaking after experiencing the acceleration of 300 g in the ±x ̂, ±y ̂, and ±z ̂ axes. In addition, the drop impact test has proved that the developed switch can withstand an impact as high as 1000 g. The MEMS acceleration switch developed throughout this study is the first to attain low threshold and good environmental characteristics at the same time. Therefore, the author believes that the switch developed in this study is the most suitable one for safety arm unit application among the low-g switches developed so far.1. Introduction 1 1.1. Sensing of acceleration 1 1.2. Safety arm unit and MEMS acceleration switches 8 1.3. Literature review 14 1.4. Motivation and purpose 19 1.5. Contribution 20 1.6. Composition of thesis 22 2. Theory and design of low-g MEMS acceleration switch 23 2.1. Basic theories on acceleration switch 23 2.1.1 Static threshold acceleration 23 2.1.2 Determining the initial gap 25 2.1.3 Serpentine spring 27 2.1.4 Parallel plate damper 31 2.2. Model description 34 2.2.1 Base glass substrate 36 2.2.2 SOI substrate 36 2.2.3 Packaging glass substrate 37 2.3. FEM simulation 38 2.3.1 Force, displacement, stress simulation 38 2.3.2 Modal analysis Resonant frequency 40 2.4. MATLAB code for MEMS switch 45 3. Fabrication of low-g MEMS acceleration switch 63 3.1. Overall fabrication process 63 3.2. Base glass substrate 65 3.3. SOI substrate 69 3.4. Bonded susbtrate & packaging 72 3.5. Fabrication results 79 4. Characterization of low-g MEMS acceleration switch 84 4.1. DC operation test & lifecycle test 84 4.2. Rotation-table experiments 93 4.3. Effect of the off-axis force on the operating acceleration 101 4.4. Heating test 111 4.5. Sealing test 112 4.6. High-g test & drop impact test 118 5. Conclusion 125 References 128 Abstract (Korean) 136Docto

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Two different topologies of radio frequency micro-electro-mechanical system (RF MEMS) series ohmic switches (cantilever and clamped–clamped beams) in coplanar waveguide (CPW) configuration have been characterized by means of DC, environmental, and RF measurements. In particular, on-wafer checks have been followed by RF test after vibration, thermal shocks, and temperature cycles. The devices have been manufactured on high resistivity silicon substrates, as building blocks to be implemented in different single-pole 4-throw (SP4 T), double-pole double-throw (DPDT) configurations, and then integrated in Low Temperature Co-fired Ceramics (LTCC) technology for the realization of large-order Clos 3D networks

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Ces travaux de thèse visent à aborder la fiabilité des composants RF-MEMS (commutateurs en particulier) pendant la phase de conception en utilisant différents approches de procédés de fabrication. Ça veut dire que l'intérêt est focalisé en comment éliminer ou diminuer pendant la conception les effets des mécanismes de défaillance plus importants au lieu d'étudier la physique des mécanismes. La détection des différents mécanismes de défaillance est analysée en utilisant les performances RF du dispositif et le développement d'un circuit équivalent. Cette nouvelle approche permet à l'utilisateur final savoir comment les performances vont évoluer pendant le cycle de vie. La classification des procédés de fabrication a été faite en utilisant le Technology Readiness Level du procédé qui évalue le niveau de maturité de la technologie. L'analyse de différentes approches de R&D est décrite en mettant l'accent sur les différences entre les niveaux dans la classification TRL. Cette thèse montre quelle est la stratégie optimale pour aborder la fiabilité en démarrant avec un procédé très flexible (LAAS-CNRS comme exemple de baisse TRL), en continuant avec une approche composant (CEA-Leti comme moyenne TRL) et en finissant avec un procédé standard co-intégré CMOS-MEMS (IHP comme haute TRL) dont les modifications sont impossibles.This thesis is intended to deal with reliability of RF-MEMS devices (switches, in particular) from a designer point of view using different fabrication process approaches. This means that the focus will be on how to eliminate or alleviate at the design stage the effects of the most relevant failure mechanisms in each case rather than studying the underlying physics of failure. The detection of the different failure mechanisms are investigated using the RF performance of the device and the developed equivalent circuits. This novel approach allows the end-user to infer the evolution of the device performance versus time going one step further in the Design for Reliability in RF-MEMS. The division of the fabrication process has been done using the Technology Readiness Level of the process. It assesses the maturity of the technology prior to incorporating it into a system or subsystem. An analysis of the different R&D approaches will be presented by highlighting the differences between the different levels in the TRL classification. This thesis pretend to show how reliability can be improved regarding the approach of the fabrication process starting from a very flexible one (LAAS-CNRS as example of low-TRL) passing through a component approach (CEA-Leti as example of medium-TRL) and finishing with a standard co-integrated CMOS-MEMS process (IHP example of high TRL)

Low Power Autonomous Microsystem for Oil Well Logging Applications

Downhole environmental monitoring can provide significant benefits to the petroleum industry. The rapid development of semiconductor technology enables autonomous sensing microsystems to operate at extreme environments. By injecting these microsystems into the boreholes and retrieving them after deployment, the geophysical conditions in the area of interest can be obtained. Challenges include high temperature, high pressure, miniaturized system size and packaging. This dissertation describes three generations of the environmental logging microsystem (ELM) for downhole geophysical logging applications. The first generation of the microsystem, ELM1.0, is designed for temperature logging in downhole environments. Each system consists of a power management circuit, a microcontroller with an integrated temperature sensor, and optical indicators. The system electronics are integrated on a flexible printed circuit board and packaged in a steel shell. The ELM1.0 has a packaged size of 8.9×8.9×6.85 mm3. It was tested at up to 125°C, 50 MPa in high salinity condition. The second generation (ELM2.0 & ELM2.1) is upgraded from ELM1.0 by adding a micromachined capacitive pressure sensor for pressure sensing up to 50 MPa. The ELM2.0 & ELM2.1 systems are packaged in steel shells filled with transparent polymer for pressure transfer. The packaged systems have a dimension of 9.5×9.5×6.5 mm3. The third generation (ELM3.0) is upgraded from ELM2.0 with a power switch and a low-cost polyimide pressure sensor for coarse pressure measurement up to 50 MPa. Both ELM2.0 and ELM3.0 systems were successfully tested at up to 125°C, 50 MPa in corrosive environments using laboratory instruments, and in a brine well at a depth up to 1235 m. A progressive polynomial calibration method was used for interpretation of the pressure sensor data from these tests. In addition, a high power micromachined RF switch for radio transceiver applications was designed, fabricated and tested. The RF switch can potentially be used to establish antenna networks for RF communication in the ELM. The switch consists of a bridge structure for electrostatic actuation and capacitive contact. The switch was fabricated with a 7-mask process. The fabricated device showed limited RF performance because of challenges related to the control of residual stress in suspended elements.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138647/1/sui_1.pd

Microheated substrates for patterning cells and controlling development

Here, we seek to control cellular development by devising a means through which cells can be subjected to a microheated environment in standard culture conditions. Numerous techniques have been devised for controlling cellular function and development via manipulation of surface environmental cues at the micro- and nanoscale. It is well understood that temperature plays a significant role in the rate of cellular activities, migratory behavior (thermotaxis), and in some cases, protein expression. Yet, the effects and possible utilization of micrometer-scale temperature fields in cell cultures have not been explored. Toward this end, two types of thermally isolated microheated substrates were designed and fabricated, one with standard backside etching beneath a dielectric film and another with a combination of surface and bulk micromachining and backside etching. The substrates were characterized with infrared microscopy, finite element modeling, scanning electron microscopy, stylus profilometry, and electrothermal calibrations. Neuron culture studies were conducted on these substrates to 1) examine the feasibility of using a microheated environment to achieve patterned cell growth and 2) selectively accelerate neural development on regions less than 100$mu m$wide. Results show that attached neurons, grown on microheated regions set at 37$~^circ C$, extended processes substantially faster than those incubated at 25$~^circ C$on the same substrate. Further, unattached neurons were positioned precisely along the length of the heater filament (operating at 45$~^circ C$) using free convection currents. These preliminary findings indicate that microheated substrates may be used to direct cellular development spatially in a practical manner.$hfillhbox[1414]

Investigation into Contact Resistance and Damage of Metal Contacts Used in RF-MEMS Switches

This research examines the physical and electrical processes involved in lifecycle failure of Microelectromechanical (MEMS) Radio-Frequency (RF) cantilever beam ohmic contact switches. Failures of these switches generally occur at the contact, but complete details of performance of microcontacts are difficult to measure and have not been previously reported. This study investigated the mechanics of microcontact behavior by designing and constructing a novel experimental setup. Three representative contact materials of varying microstructure (Au, Au5%Ru, Au4%V2O5) were tested and parameters of contact during cycling were measured. The Au4%V2O5, a dispersion strengthened material developed at Lehigh University, showed the most promise of the materials tested with the longest-life contact lasting more than 15.5 x 106 cycles. Evidence of time-dependent deformation and contact heating during cycling was noted in all materials tested. Material hardness was not proportional to contact lifetime or adhesive forces measured during testing. Surfaces of post-cycling contact surfaces were evaluated and failures were categorized by ductile or brittle separation characteristics. Separation characteristics were correlated by contact lifetime