1,089 research outputs found

    RELIABILITY TESTING & BAYESIAN MODELING OF HIGH POWER LEDS FOR USE IN A MEDICAL DIAGNOSTIC APPLICATION

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    While use of LEDs in fiber optics and lighting applications is common, their use in medical diagnostic applications is rare. Since the precise value of light intensity is used to interpret patient results, understanding failure modes is very important. The contributions of this thesis is that it represents the first measurements of reliability of AlGaInP LEDs for the medical environment of short pulse bursts and hence the uncovering of unique failure mechanisms. Through accelerated life tests (ALT), the reliability degradation model has been developed and other LED failure modes have been compared through a failure modes and effects criticality analysis (FMECA). Appropriate ALTs and accelerated degradation tests (ADT) were designed and carried out for commercially available AlGaInP LEDs. The bias conditions were current pulse magnitude and duration, current density and temperature. The data was fitted to both an Inverse Power Law model with current density J as the accelerating agent and also to an Arrhenius model with T as the accelerating agent. The optical degradation during ALT/ADT was found to be logarithmic with time at each test temperature. Further, the LED bandgap temporarily shifts towards the longer wavelength at high current and high junction temperature. Empirical coefficients for Varshini's equation were determined, and are now available for future reliability tests of LEDs for medical applications. In order to incorporate prior knowledge, the Bayesian analysis was carried out for LEDs. This consisted of identifying pertinent prior data and combining the experimental ALT results into a Weibull probability model for time to failure determination. The Weibull based Bayesian likelihood function was derived. For the 1st Bayesian updating, a uniform distribution function was used as the Prior for Weibull á-â parameters. Prior published data was used as evidence to get the 1st posterior joint á-â distribution. For the 2nd Bayesian updating, ALT data was used as evidence to obtain the 2nd posterior joint á-â distribution. The predictive posterior failure distribution was estimated by averaging over the range of á-â values. This research provides a unique contribution in reliability degradation model development based on physics of failure by modeling the LED output characterization (logarithmic degradation, TTF â<1), temperature dependence and a degree of Relevance parameter `R' in the Bayesian analysis

    Light-emitting diode spherical packages: an equation for the light transmission efficiency

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    Virtually all light-emitting diodes (LEDs) are encapsulated with a transparent epoxy or silicone-gel. In this paper we analyze the optical efficiency of spherical encapsulants. We develop a quasi-radiometric equation for the light transmission efficiency, which incorporates some ideas of Monte-Carlo ray tracing into the context of radiometry. The approach includes the extended source nature of the LED chip, and the chip radiance distribution. The equation is an explicit function of the size and the refractive index of the package, and also of several chip parameters such as shape, size, radiance, and location inside the package. To illustrate the use of this equation, we analyze several packaging configurations of practical interest; for example, a hemispherical dome with multiple chips, a flat encapsulation as a special case of the spherical package, and approximate calculations of an encapsulant with a photonic crystal LED or with a photonic quasi crystal LED. These calculations are compared with Monte-Carlo ray-tracing, giving almost identical values.Comment: 30 pages, 7 figures, 1 tabl

    DESIGN AND RELIABILITY ASSESSMENT OF HIGH POWER LED AND LED-BASED SOLID STATE LIGHTING

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    Lumen depreciation and color quality change of high power LED-based solid state light (SSL) are caused by the combination of various degradation mechanisms. The analytical/experimental models on the system as well as component-level are proposed to analyze the complex reliability issues of the LED-based solid SSL. On the system-level front, a systematic approach to define optimum design domains of LED-based SSL for a given light output requirement is developed first by taking cost, energy consumption and reliability into consideration. Three required data sets (lumen/LED, luminaire efficacy, and L70 lifetime) to define design domains are expressed as contour maps in terms of two most critical operating parameters: the forward current and the junction temperature (If and Tj). Then, the available domain of design solutions is defined as a common area that satisfies all the requirements of a luminaire. Secondly, a physic of failure (PoF) based hierarchical model is proposed to estimate the lifetime of the LED-based SSL. The model is implemented successfully for an LED-based SSL cooled by a synthetic jet, where the lifetime of a prototypical luminaire is predicted from LED lifetime data using the degradation analyses of the synthetic jet and the power electronics. On the component-level front, a mathematical model and an experimental procedure are developed to analyze the degradation mechanisms of high power LEDs. In the approach, the change in the spectral power distribution (SPD) caused by the LED degradation is decomposed into the contributions of individual degradation mechanisms so that the effect of each degradation mechanism on the final LED degradation is quantified. It is accomplished by precise deconvolution of the SPD into the leaked blue light and the phosphor converted light. The model is implemented using the SPDs of a warm white LED with conformally-coated phosphor, obtained before and after 9,000 hours of operation. The analysis quantifies the effect of each degradation mechanism on the final values of lumen, CCT and CRI

    High-Temperature Optoelectronic Device Characterization and Integration Towards Optical Isolation for High-Density Power Modules

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    Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in terms of thermal management, power efficiency, power density, operating environments, and reliability. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in high-temperature environments. Modular integration of optoelectronic devices into high-temperature power modules is restricted due to the significant optical efficiency drop at elevated temperatures. The quantum efficiency and long-term reliability of optoelectronic devices decrease at elevated temperatures. The motivation for this study is to develop optoelectronic devices, specifically optocouplers, that can be integrated into high-density power modules. A detailed study on optoelectronic devices at high temperature enables us to explore the possibility of scaling high-density power modules by integrating high-temperature optoelectronic devices into the power module. The primary goal of this study is to characterize and verify the high-temperature operation of optoelectronic devices, including light-emitting diodes and photodiodes based on WBG materials. The secondary goal is to identify and integrate optoelectronic devices to achieve galvanic isolation in high-density power modules working at elevated temperatures. As part of the study, a high-temperature packaging, based on low temperature co-fired ceramic (LTCC), suitable to accommodate optoelectronic devices, will also be designed and developed

    Atomic-Scale Insights into Light Emitting Diode

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    In solid-state lightning, GaN-based vertical LED technology has attracted tremendous attention because its luminous efficacy has surpassed the traditional lightning technologies, even the 2014 Nobel Prize in Physics was awarded for the invention of efficient blue LEDs, which enabled eco-friendly and energy-saving white lighting sources. Despite today’s GaN-based blue VLEDs can produce IQE of 90% and EQE of 70-80%, still there exist a major challenge of efficiency droop. Nonetheless, state-of-the-art material characterization and failure analysis tools are inevitable to address that issue. In this context, although LEDs have been characterized by different microscopy techniques, they are still limited to either its semiconductor or active layer, which mainly contributes towards the IQE. This is also one of the reason that today’s LEDs IQE exceeded above 80% but EQE of 70-80% remains. Therefore, to scrutinize the efficiency droop issue, this work focused on developing a novel strategy to investigate key layers of the LED structure, which play the critical role in enhancing the EQE = IQE x LEE factors. Based on that strategy, wafer bonding, reflection, GaN-Ag interface, MQWs and top-textured layers have been systematically investigated under the powerful advanced microscopy techniques of SEM-based TKD/EDX/EBSD, AC-STEM, AFM, Raman spectroscopy, XRD, and PL. Further, based on these correlative microscopy results, optimization suggestions are given for performance enhancement in the LEDs. The objective of this doctoral research is to perform atomic-scale characterization on the VLED layers/interfaces to scrutinize their surface topography, grain morphology, chemical composition, interfacial diffusion, atomic structure and carrier localization mechanism in quest of efficiency droop and reliability issues. The outcome of this research advances in understanding LED device physics, which will facilitate standardization in its design for better smart optoelectronics products

    Literature review on thermo-mechanical behavior of components for LED system-in-package

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    High-power UV-LED degradation: Continuous and cycled working condition influence

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    High-power (HP) UV-LEDs can replace UV lamps for real-time fluoro-sensing applications by allowing portable and autonomous systems. However, HP UV-LEDs are not a mature technology, and there are still open issues regarding their performance evolution over time. This paper presents a reliability study of 3W UV-LEDs, with special focus on LED degradation for two working conditions: continuous and cycled (30 s ON and 30 s OFF). Accelerated life tests are developed to evaluate the influence of temperature and electrical working conditions in high-power LEDs degradation, being the predominant failure mechanism the degradation of the package. An analysis that includes dynamic thermal and optical HP UV-LED measurements has been performed. Static thermal and stress simulation analysis with the finite element method (FEM) identifies the causes of package degradation. Accelerated life test results prove that HP UV-LEDs working in cycled condition have a better performance than those working in continuous condition

    High-Efficiency Nitride-Based Solid-State Lighting

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    Thermal management and humidity based prognostics of high-power LED packages

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    While Light Emitting Diodes (LEDs) hold much potential as the future of lighting, the high junction temperatures generated during usage result in higher than expected degradation rates and premature failures ahead of the expected lifetime. This problem is especially under-addressed under conditions of high humidity, where there has been limited studies and standards to manage humidity based usage. This research provides an analysis of the factors that contribute to high junction temperatures and suggests prognostic techniques to aid in LED thermal management, specifically under humidity stress. First, this research investigates the effects of current, temperature and humidity on the electrical-optical-thermal (EOT) properties. Temperature rises within an LED because of input stressors which cause heat to build up: the input current, the operating and ambient temperature, and the relative humidity of the environment. Not only is there an accumulation of heat due to these factors that alter the thermal properties, but the electrical and optical characteristics are changed as well. By uncovering specific configurations causing the EOT performance to degrade under stress, better thermal management techniques can be employed. Second, this research proceeds to quantitatively link the EOT performance degradation to the humidity causal factor. The recent proliferation of LED usage in regions with high humidity has not corresponded with sufficient studies and standards governing LED test and usage under the humidity stressor. This has led to indeterminate use and consequentially, a lack of understanding of humidity based failures. A novel humidity based degradation model (HBDM) is successfully developed to gauge the impact of the humidity stressor by means of an index which is shown to be an effective predictor of colour degradation. This prognostication of the colour shift by the HBDM provides both academia and industry not only with an indicator of the physical degradation but also an assessment of the LED yellow-blue colour rendering stability, a critical application criterion. Using the HBDM parameters as indicators of the state of the LED, the degradation study is expanded in the development of a Distance Measure approach to isolate degraded samples exceeding a specified multivariate boundary. The HBDM and Distance Measure approach serve as powerful prognostic techniques in overall LED thermal management
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