6,369 research outputs found
Determinants of the intention to use performance-enhancing substances among Portuguese gym users
The present study examined the determinants of the intentions to use prohibited performance- enhancing substances (PES) and the hypothesis of gender and PES use influencing Theory of Planned Behavior (TPB) variables. A TPB approach was used. A convenience sample of Portuguese gym users (n = 453) completed an anonymous web-based survey. Variance-based structural equation modeling, multigroup analysis strategy, latent mean analysis approach and one-way ANOVA analysis were used. The findings showed that, at structural level, results support the TPB framework in terms of characterizing and predicting intentions to PES use in the gym users sample, and that subjective norms were the strongest predictor of PES use intentions. Female and male differed in intentions to use PES, subjective norms and beliefs. However, the predictive model in study remains invariable in both groups. Concerning PES use, results showed the existence of a significant difference, regarding all the TPB´s constructs of the PES users and nonusers’ groups, and that the predictive capacity of each predictor was different for each group. Psychological strategies should be based on subjective norms, alongside beliefs and attitudes towards PES use, since these variables influence the intention to use PES in that particular population
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the V3−III vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeBMBF, 13N12587, Photonische Plattformtechnologie zur ultrasensitiven und hochspezifischen biochemischen Sensorik auf Basis neuartiger UV-LEDs (UltraSens
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
We report on electrostatic screening of polarization-induced internal
electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN
nanodiscs embedded between AlN barriers. The incorporation of Germanium at
concentrations above shifts the photoluminescence
emission energy of GaN nanodiscs to higher energies accompanied by a decrease
of the photoluminescence decay time. At the same time, the thickness-dependent
shift in emission energy is significantly reduced. In spite of the high donor
concentration a degradation of the photoluminescence properties is not
observed.Comment: Manuscript including Supplemental material (15 pages, 5 figures
3D characterization of CdSe nanoparticles attached to carbon nanotubes
The crystallographic structure of CdSe nanoparticles attached to carbon
nanotubes has been elucidated by means of high resolution transmission electron
microscopy and high angle annular dark field scanning transmission electron
microscopy tomography. CdSe rod-like nanoparticles, grown in solution together
with carbon nanotubes, undergo a morphological transformation and become
attached to the carbon surface. Electron tomography reveals that the
nanoparticles are hexagonal-based with the (001) planes epitaxially matched to
the outer graphene layer.Comment: 7 pages, 8 figure
Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and
observed transport evidence of single anisotropic-mass valley occupancy for the
electrons in a 150 \AA wide QW. Our calculations of strain and quantum
confinement for these samples predict single anisotropic-mass valley occupancy
for well widths greater than 53 \AA. Below this, double-valley occupation
is predicted such that the longitudinal mass axes are collinear. We observed
mobility anisotropy in the electronic transport along the crystallographic
directions in the ratio of 2.8, attributed to the mass anisotropy as well as
anisotropic scattering of the electrons in the X-valley of AlAs
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