Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions

Photon-coupled isolation switch Quarterly report, 1 Oct. - 31 Dec. 1966

Integrated circuit photon coupled isolation switc

Sixty GHz IMPATT diode development

The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser

We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 km non zero dispersion shifted single mode fiber were performed at 28 Gb/s bitrate using a 2(7)-1 NRZ-PRBS pattern resulting in a 1 dB power penalty. (C) 2015 Optical Society of Americ

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic silicon detectors, the CMOS circuitry for the read-out and the sensing layer, by fabricating them in different substrates and then by bonding them together. Therefore, to be collected by the read-out circuitry, charges generated by radiation in the bulk have to traverse the bonding interface, whose electrical properties need to be characterized. The first part of this thesis is focused on the evaluation of Transient Current Technique (TCT) for this purpose. TCT is largely used for the study of radiation damage in silicon detectors, and consists in the injection of a localized cloud of electrons inside a detector based on a reverse-biased diode, that is drifted by the electric field. A transient current signal is generated, whose shape is related to the electric field profile that may be affected by lattice defects generated by radiation. In this context, the bonding process is expected to generate a thin amorphous silicon interface between the two bonded substrates. This layer can be seen as full of defects and therefore it is expected to influence the electric field, and the TCT current signal. This is demonstrated by means of Sentaurus TCAD numerical simulations and an analytical model, using a diode with the bonding interface in the middle of the bulk as test structure. The second part of the thesis describes the characterization of the interface, generated by bonding high resistivity wafers at CEA-Leti in Grenoble. For this purpose, Schottky diodes are fabricated on these stacks at EPFL, and then characterized with CV, IV and TCT techniques. The results obtained are compared to simulation data, to show that the electric field did not extend to the bulk, preventing charges to be collected. This is an issue for the fabrication of radiation detectors, since there would not be collection of charges generated at the sensing bulk. Following these conclusions, two solutions are proposed. First, the optimization of the bonding process to reduce the number of traps. Second, a modification of the detector design in such a way that the bonding interface is located at the PN junction, since the electric field is maximum at this position, and therefore the influence of traps is less important. The last part of this thesis is devoted to the description of a new charge injection technique for TCT measurements. Instead of using a laser, charges are injected by means of nanosecond voltage pulses, applied to dedicated wells fabricated on the PN junction contact. Injection occurs by thermionic emission, while the charges drift, as in standard TCT measurements. This novel method of charge injection is called electrical injection TCT (el-TCT). It could allow to perform on-line TCT measurements during experiments

III-V-on-silicon photonic devices for optical communication and sensing

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm

Development of germanium/silicon integration for near infrared detection

Silicon (Si) is the base material for electronic technologies and is emerging as a very attractive platform for photonic integrated circuits (PICs). PICs allow optical systems to be made more compact with higher performance than discrete optical components. Applications for PICs are in the area of fibre-optic communication, biomedical devices, photovoltaics and imaging. Germanium (Ge), due to its suitable bandgap for telecommunications and its compatibility with Si technology is preferred over III-V compounds as an integrated on-chip detector at near infrared wavelengths. There are two main approaches for Ge/Si integration: through epitaxial growth and through direct wafer bonding. The lattice mismatch of ~4.2% between Ge and Si is the main problem of the former technique which leads to a high density of dislocations while the bond strength and conductivity of the interface are the main challenges of the latter. Both result in trap states which are expected to play a critical role. Understanding the physics of the interface is a key contribution of this thesis. This thesis investigates Ge/Si diodes using these two methods. The effects of interface traps on the static and dynamic performance of Ge/Si avalanche photodetectors have been modelled for the first time. The thesis outlines the original process development and characterization of mesa diodes which were fabricated by transferring a ~700 nm thick layer of p-type Ge onto n-type Si using direct wafer bonding and layer exfoliation. The effects of low temperature annealing on the device performance and on the conductivity of the interface have been investigated. It is shown that the diode ideality factor and the series resistance of the device are reduced after annealing. The carrier transport mechanism is shown to be dominated by generation–recombination before annealing and by direct tunnelling in forward bias and band-to-band tunnelling in reverse bias after annealing. The thesis presents a novel technique to realise photodetectors where one of the substrates is thinned by chemical mechanical polishing (CMP) after bonding the Si-Ge wafers. Based on this technique, Ge/Si detectors with remarkably high responsivities, in excess of 3.5 A/W at 1.55 μm at −2 V, under surface normal illumination have been measured. By performing electrical and optical measurements at various temperatures, the carrier transport through the hetero-interface is analysed by monitoring the Ge band bending from which a detailed band structure of the Ge/Si interface is proposed for the first time. The above unity responsivity of the detectors was explained by light induced potential barrier lowering at the interface. To our knowledge this is the first report of light-gated responsivity for vertically illuminated Ge/Si photodiodes. The wafer bonding approach followed by layer exfoliation or by CMP is a low temperature wafer scale process. In principle, the technique could be extended to other materials such as Ge on GaAs, or Ge on SOI. The unique results reported here are compatible with surface normal illumination and are capable of being integrated with CMOS electronics and readout units in the form of 2D arrays of detectors. One potential future application is a low-cost Si process-compatible near infrared camera

Liquid metal micro heat pipes for space radiator applications

Micromachining is a chemical means of etching three-dimensional structures, typically in single-crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (micro electro mechanical systems), where in addition to the ordinary two dimensional (planar) microelectronics, it is possible to build three-dimensional micromotors, electrically-actuated microvalves, hydraulic systems, and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor microfabrication. The University of Cincinnati group in collaboration with NASA Lewis formed micro heat pipes in silicon by the above techniques. Work is ongoing at a modest level, but several essential bonding and packaging techniques have been recently developed. Currently, we have constructed and filled water/silicon micro heat pipes. Preliminary thermal tests of arrays of 125 micro heat pipes etched in a 1 inch x 1 inch x 250 micron silicon wafer have been completed. These pipes are instrumented with extremely small P-N junctions to measure their effective conductivity and their maximum operating power. A relatively simple one-dimensional model has been developed in order to predict micro heat pipes' operating characteristics. This information can be used to optimize micro heat pipe design with respect to length, hydraulic diameter, and number of pipes. Work is progressing on the fabrication of liquid-metal micro heat pipes. In order to be compatible with liquid metal (sodium or potassium), the inside of the micro heat pipes will be coated with a refractory metal (such as tungsten, molybdenum, or titanium)

Electro-optically tunable microring resonators in lithium niobate

Optical microresonators have recently attracted a growing attention in the photonics community. Their applications range from quantum electro-dynamics to sensors and filtering devices for optical telecommunication systems, where they are likely to become an essential building block. The integration of nonlinear and electro-optical properties in the resonators represents a very stimulating challenge, as it would incorporate new and more advanced functionality. Lithium niobate is an excellent candidate material, being an established choice for electro-optic and nonlinear optical applications. Here we report on the first realization of optical microring resonators in submicrometric thin films of lithium niobate. The high index contrast films are produced by an improved crystal ion slicing and bonding technique using benzocyclobutene. The rings have radius R=100 um and their transmission spectrum has been tuned using the electro-optic effect. These results open new perspectives for the use of lithium niobate in chip-scale integrated optical devices and nonlinear optical microcavities.Comment: 15 pages, 8 figure

AN INTEGRATED ELECTROMAGNETIC MICRO-TURBO-GENERATOR SUPPORTED ON ENCAPSULATED MICROBALL BEARINGS

This dissertation presents the development of an integrated electromagnetic micro-turbo-generator supported on encapsulated microball bearings for electromechanical power conversion in MEMS (Microelectromechanical Systems) scale. The device is composed of a silicon turbine rotor with magnetic materials that is supported by microballs over a stator with planar, multi-turn, three-phase copper coils. The micro-turbo-generator design exhibits a novel integration of three key technologies and components, namely encapsulated microball bearings, incorporated thick magnetic materials, and wafer-thick stator coils. Encapsulated microball bearings provide a robust supporting mechanism that enables a simple operation and actuation scheme with high mechanical stability. The integration of thick magnetic materials allows for a high magnetic flux density within the stator. The wafer-thick coil design optimizes the flux linkage and decreases the internal impedance of the stator for a higher output power. Geometrical design and device parameters are optimized based on theoretical analysis and finite element simulations. A microfabrication process flow was designed using 15 optical masks and 110 process steps to fabricate the micro-turbo-generators, which demonstrates the complexity in device manufacturing. Two 10 pole devices with 2 and 3 turns per pole were fabricated. Single phase resistances of 46Ω and 220Ω were measured for the two stators, respectively. The device was actuated using pressurized nitrogen flowing through a silicon plumbing layer. A test setup was built to simultaneously measure the gas flow rate, pressure, rotor speed, and output voltage and power. Friction torques in the range of 5.5-33µNm were measured over a speed range of 0-16krpm (kilo rotations per minute) within the microball bearings using spin-down testing methodology. A maximum per-phase sinusoidal open circuit voltage of 0.1V was measured at 23krpm, and a maximum per-phase AC power of 10µW was delivered on a matched load at 10krpm, which are in full-agreement with the estimations based on theoretical analysis and simulations. The micro-turbo-generator presented in this work is capable of converting gas flow into electricity, and can potentially be coupled to a same-scale combustion engine to convert high-density hydrocarbon energy into electrical power to realize a high-density power source for portable electronic systems