70 research outputs found

    Exploring Managed NAND Media Endurance

    Get PDF
    Flash memory can be found in media players, cameras, cell phones and portable storage. These consumer items have universally compatible storage devices. However, what is their longevity and what is the long-term data retention reliability? This thesis will explore and attempt to answer these questions. Predicting accurate endurance ratings and long-term storage reliability is problematic; a storage card in a cell phone will simply wear differently if used for personal computer backup. Advertised longevity ratings can also be ambiguous, specified in a number of years of ‘typical’ and ‘average’ use. This thesis begins by exploring the operation of flash technology used in managed NAND devices. Operational and hidden byproducts of controlling flash memory were identified then directly observed on a sampled MultiMediaCard (MMC) card. The collected data was graphed to calculate the life span of the product for several synthetic data transfer categories. Combined with the total storage capacity, the factors used in longevity calculations are shown to be dependent upon the transfer method. To answer the original question, a hypothetical camera file storage usage model was contrasted against measured wear data to calculate longevity. When changing the addressing randomness of writing data to fifty percent of total transfers, the 10-year advertised longevity was shown diminished by half. This demonstrated how data storage randomness of the usage model influences device longevity

    Flash Memory Devices

    Get PDF
    Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement

    Fault-tolerant satellite computing with modern semiconductors

    Get PDF
    Miniaturized satellites enable a variety space missions which were in the past infeasible, impractical or uneconomical with traditionally-designed heavier spacecraft. Especially CubeSats can be launched and manufactured rapidly at low cost from commercial components, even in academic environments. However, due to their low reliability and brief lifetime, they are usually not considered suitable for life- and safety-critical services, complex multi-phased solar-system-exploration missions, and missions with a longer duration. Commercial electronics are key to satellite miniaturization, but also responsible for their low reliability: Until 2019, there existed no reliable or fault-tolerant computer architectures suitable for very small satellites. To overcome this deficit, a novel on-board-computer architecture is described in this thesis.Robustness is assured without resorting to radiation hardening, but through software measures implemented within a robust-by-design multiprocessor-system-on-chip. This fault-tolerant architecture is component-wise simple and can dynamically adapt to changing performance requirements throughout a mission. It can support graceful aging by exploiting FPGA-reconfiguration and mixed-criticality.  Experimentally, we achieve 1.94W power consumption at 300Mhz with a Xilinx Kintex Ultrascale+ proof-of-concept, which is well within the powerbudget range of current 2U CubeSats. To our knowledge, this is the first COTS-based, reproducible on-board-computer architecture that can offer strong fault coverage even for small CubeSats.European Space AgencyComputer Systems, Imagery and Medi

    Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

    Get PDF
    We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results

    Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

    Get PDF
    NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al
    corecore