377 research outputs found

    Neuro-memristive Circuits for Edge Computing: A review

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    The volume, veracity, variability, and velocity of data produced from the ever-increasing network of sensors connected to Internet pose challenges for power management, scalability, and sustainability of cloud computing infrastructure. Increasing the data processing capability of edge computing devices at lower power requirements can reduce several overheads for cloud computing solutions. This paper provides the review of neuromorphic CMOS-memristive architectures that can be integrated into edge computing devices. We discuss why the neuromorphic architectures are useful for edge devices and show the advantages, drawbacks and open problems in the field of neuro-memristive circuits for edge computing

    Digital Simulations of Memristors Towards Integration with Reconfigurable Computing

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    The end of Moore’s Law has been predicted for decades. Demand for increased parallel computational performance has been increased by improvements in machine learning. This past decade has demonstrated the ever-increasing creativity and effort necessary to extract scaling improvements in CMOS fabrication processes. However, CMOS scaling is nearing its fundamental physical limits. A viable path for increasing performance is to break the von Neumann bottleneck. In-memory computing using emerging memory technologies (e.g. ReRam, STT, MRAM) offers a potential path beyond the end of Moore’s Law. However, there is currently very little support from industry tools for designers wishing to incorporate these devices and novel architectures. The primary issue for those using these tools is the lack of support for mixed-signal design, as HDLs such as Verilog were designed to work only with digital components. This work aims to improve the ability for designers to rapidly prototype their designs using these emerging memory devices, specifically memristors, by extending Verilog to support functional simulation of memristors with the Verilog Procedural Interface (VPI). In this work, demonstrations of the ability for the VPI to simulate memristors with the nonlinear ion-drift model and the behavior of a memristive crossbar array are presented

    Digital Simulations of Memristors Towards Integration with Reconfigurable Computing

    Get PDF
    The end of Moore’s Law has been predicted for decades. Demand for increased parallel computational performance has been increased by improvements in machine learning. This past decade has demonstrated the ever-increasing creativity and effort necessary to extract scaling improvements in CMOS fabrication processes. However, CMOS scaling is nearing its fundamental physical limits. A viable path for increasing performance is to break the von Neumann bottleneck. In-memory computing using emerging memory technologies (e.g. ReRam, STT, MRAM) offers a potential path beyond the end of Moore’s Law. However, there is currently very little support from industry tools for designers wishing to incorporate these devices and novel architectures. The primary issue for those using these tools is the lack of support for mixed-signal design, as HDLs such as Verilog were designed to work only with digital components. This work aims to improve the ability for designers to rapidly prototype their designs using these emerging memory devices, specifically memristors, by extending Verilog to support functional simulation of memristors with the Verilog Procedural Interface (VPI). In this work, demonstrations of the ability for the VPI to simulate memristors with the nonlinear ion-drift model and the behavior of a memristive crossbar array are presented

    Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture

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    Reducing power consumption in nowadays computer technologies represents an increasingly difficult challenge. Conventional computing architectures suffer from the so-called von Neumann bottleneck (VNB), which consists in the continuous need to exchange data and instructions between the memory and the processing unit, leading to significant and apparently unavoidable power consumption. Even the hardware typically employed to run Artificial Intelligence (AI) algorithms, such as Deep Neural Networks (DNN), suffers from this limitation. A change of paradigm is so needed to comply with the ever-increasing demand for ultra-low power, autonomous, and intelligent systems. From this perspective, emerging memristive non-volatile memories are considered a good candidate to lead this technological transition toward the next-generation hardware platforms, enabling the possibility to store and process information in the same place, therefore bypassing the VNB. To evaluate the state of current public-available devices, in this work commercial-grade packaged Self Directed Channel memristors are thoroughly studied to evaluate their performance in the framework of in-memory computing. Specifically, the operating conditions allowing both analog update of the synaptic weight and stable binary switching are identified, along with the associated issues. To this purpose, a dedicated yet prototypical system based on an FPGA control platform is designed and realized. Then, it is exploited to fully characterize the performance in terms of power consumption of an innovative Smart IMPLY (SIMPLY) Logic-in-Memory (LiM) computing framework that allows reliable in-memory computation of classical Boolean operations. The projection of these results to the nanoseconds regime leads to an estimation of the real potential of this computing paradigm. Although not investigated in this work, the presented platform can also be exploited to test memristor-based SNN and Binarized DNNs (i.e., BNN), that can be combined with LiM to provide the heterogeneous flexible architecture envisioned as the long-term goal for ubiquitous and pervasive AI
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