Contribution to improve the EMI performance of electrical drive systems in vehicles with special consideration of power semiconductor modules

Diese Arbeit dient als Beitrag zur Verbesserung des EMV-Verhaltens elektrischer Antriebssysteme in Fahrzeugen, wobei der Fokus auf dem Leistungshalbleitermodul für die Automobilanwendung liegt. Für ein besseres und tieferes Verständnis der Quelle von leitungsgebundenen Störungen werden die EMV-Mechanismen und -Effekte im Zusammenhang mit dem Leistungsmodul im Antriebssystem durch Simulationen und Messungen untersucht. Der Einfluss der Diode Reverse Recovery Effekte auf das EMV-Verhalten wird quantitativ mit verschiedenen Lastströmen sowie mit verschiedenen Diodentypen, wie z.B. SiC-Schottky-Dioden, analysiert. Durch Simulationen wird der Einfluss des Leistungsmoduls auf das System untersucht; auf dieser Basis wird die Bedeutung verschiedener Faktoren innerhalb und außerhalb des Leistungsmoduls für das EMV-Verhalten bewertet. Zur Validierung der Simulationsergebnisse wird der Messaufbau für eine konventionelle EMV-Messung für die Automobilanwendung vorgestellt. Die Messergebnisse belegen, dass die Simulationsmodelle unter bestimmten Randbedingungen für zukünftige Leistungsmodulkonstruktionen zur EMV-Vorhersage verwendbar sind. Basierend auf dem Verständnis, wie es aus den Simulationen und Messergebnissen hergeleitet wurde, werden konkrete Optimierungskonzepte für ein inhärent störungsarmes Leistungsmodul entwickelt und realisiert. Dessen EMV-Verhalten sowie der Aufwand des Musterbaus aus Sicht des Leistungsmodulherstellers werden anhand verschiedenen Kriterien verglichen und bewertet. Außerdem wird das dynamische und Kurzschlussverhalten der Prototypen einschließlich der Stromverteilung zwischen den Halbleiterchips charakterisiert. In dieser Arbeit wird ein neuartiges Testverfahren vorgestellt, mit dem es möglich ist, das leitungsgebundene EMV-Verhalten von Leistungsmodulen abzuschätzen, ohne den gesamten Testaufbau wie bei einer konventionellen EMV-Messung zu erstellen. Diese Charakterisierung kann anschließend in der Phase der Inverterentwicklung verwendet werden, um ein geeignetes Modul auszuwählen und den erwarteten Aufwand zur Einhaltung der EMV Standards zu bewerten.This work serves as a contribution to improve the EMI performance of electrical drive systems in vehicles; the focus is on the power semiconductor module for automotive application. For a better and deeper understanding of the conducted EMI source, the conducted EMI mechanisms and effects in the drive system are investigated through simulations as well as measurements with special consideration of power modules: The influence of the diode recovery effects on the EMI performance is quantitatively analyzed with different load currents, as well as with different types of diodes, e.g. SiC Schottky barrier diode. Through the simulation, the influence coming from the power module to the system is clarified; the importance of different factors inside and outside of the power module regarding EMI performance are therefore evaluated. To validate the simulation results, the setup and test bench for a conventional EMI measurement for the typical automotive application are presented. Through the measurement results it is proven that the simulation models are usable under certain boundary conditions for future power module designs with regard to the EMI prediction. Based on the understanding and the conclusions from the simulation and measurement results, concrete EMI optimization concepts for an inherently low-interference power module are developed and realized. The EMI performance as well as the feasibility of the sample modules are compared and evaluated under different criteria from the power module manufacturer’s point of view. Besides, the dynamic and short-circuit performances of the sample modules, regarding to the current distribution on the semiconductor chips, are characterized. A novel test procedure is introduced in this work, by which it is possible to estimate the conducted EMI performance of power modules without building the whole test setup like in a conventional EMI measurement. This characterization can subsequently be used in the phase of converter development to select a suitable device and evaluate the expected effort to comply with EMI standards

Design and Advanced Model Predictive Control of Wide Bandgap Based Power Converters

The field of power electronics (PE) is experiencing a revolution by harnessing the superior technical characteristics of wide-band gap (WBG) materials, namely Silicone Carbide (SiC) and Gallium Nitride (GaN). Semiconductor devices devised using WBG materials enable high temperature operation at reduced footprint, offer higher blocking voltages, and operate at much higher switching frequencies compared to conventional Silicon (Si) based counterpart. These characteristics are highly desirable as they allow converter designs for challenging applications such as more-electric-aircraft (MEA), electric vehicle (EV) power train, and the like. This dissertation presents designs of a WBG based power converters for a 1 MW, 1 MHz ultra-fast offboard EV charger, and 250 kW integrated modular motor drive (IMMD) for a MEA application. The goal of these designs is to demonstrate the superior power density and efficiency that are achievable by leveraging the power of SiC and GaN semiconductors. Ultra-fast EV charging is expected to alleviate the challenge of range anxiety , which is currently hindering the mass adoption of EVs in automotive market. The power converter design presented in the dissertation utilizes SiC MOSFETs embedded in a topology that is a modification of the conventional three-level (3L) active neutral-point clamped (ANPC) converter. A novel phase-shifted modulation scheme presented alongside the design allows converter operation at switching frequency of 1 MHz, thereby miniaturizing the grid-side filter to enhance the power density. IMMDs combine the power electronic drive and the electric machine into a single unit, and thus is an efficient solution to realize the electrification of aircraft. The IMMD design presented in the dissertation uses GaN devices embedded in a stacked modular full-bridge converter topology to individually drive each of the motor coils. Various issues and solutions, pertaining to paralleling of GaN devices to meet the high current requirements are also addressed in the thesis. Experimental prototypes of the SiC ultra-fast EV charger and GaN IMMD were built, and the results confirm the efficacy of the proposed designs. Model predictive control (MPC) is a nonlinear control technique that has been widely investigated for various power electronic applications in the past decade. MPC exploits the discrete nature of power converters to make control decisions using a cost function. The controller offers various advantages over, e.g., linear PI controllers in terms of fast dynamic response, identical performance at a reduced switching frequency, and ease of applicability to MIMO applications. This dissertation also investigates MPC for key power electronic applications, such as, grid-tied VSC with an LCL filter and multilevel VSI with an LC filter. By implementing high performance MPC controllers on WBG based power converters, it is possible to formulate designs capable of fast dynamic tracking, high power operation at reduced THD, and increased power density

Converter- and Module-level Packaging for High Power Density and High Efficiency Power Conversion

Advancements in the converter- and module-level packaging will be the key for the development of the emerging high-power, high power-density, high-eciency power conversion applications, such as traction, shipboards, more-electric-aircraft, and locomotive. Wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFET attract much attention in these applications for their fast switching speeds, resulting in low loss and a consequent possibility for high switching frequency to increase the power density. However, for high-current, high power implementations, WBG devices are still available in small die sizes. Multiple SiC devices need to be connected in parallel to replace a large IGBT die. It is challenging to realize high-switching-frequency and low loss with a lot of parallel devices due to the inherent parameter dierences, which lead to unbalanced dynamic current sharing resulting in unequal temperature distribution and overstress. Apart from the technical challenges, the price of SiC modules is another roadblock for its widespread application. The paralleling of a large number of SiC chips in the module to handle high current increases the module cost. Hence, this work proposes a Si-IGBT and SiC-MOSFET-based hybrid switch solution. For a converter-level packaging, the device technology, available device package, and orientation of the pins are the essential governing factors. This work addresses the converter-level packaging, which is referred to as a power electronics building block, of the proposed hybrid switch, combining discrete packages and frame-based modules for the devices and a singlephase three-level T-type topology. The primary optimization objective for converter-level packaging includes low inductance busbar design, high eciency, and high specic and volumetric power density. Overall implementation is not trivial; however, this work achieves an optimum design compared to the state-of-the-art. The module-level packaging challenges are dependent on the type of device technology and topology. Reducing the parasitic inductances, capacitances, and the junction to case thermal resistance are the optimization objectives in module packaging. Given the intended application of the module, achieving a high-reliability module is also essential. This work includes a hybrid switch-based power module addressing the challenges of WBG module-level packaging and challenges specic to the hybrid switch. The availability of engineering samples of SiC MOSFETs with voltage ratings above 10 kV and commercialization in the future drive the module-level packaging of high voltage devices. High voltage power modules will support the development of future solid-state circuit breakers, transformers, and power conversion applications in shipboards and rolling stocks. The availability of these modules can eliminate the necessity of multilevel topologies. This work investigates and demonstrates the module-level packaging of HV (10-15 kV) SiC MOSFETs

Optocoupler Integration of LTCC-based Gate Driver in a SiC Power Module

The growing demand for electrical energy in today’s industrialized economy has driven the need for innovative approaches to meet diverse application requirements. Notably, advancements have been made in the field of power electronic systems, as reliable power electronic converters are essential for managing multiple power sources and loads. However, the development of these systems poses challenges related to power device switching speed, system weight and size, and power losses. The integration of a gate driver into a SiC power module offers a solution to many of these challenges, thereby driving the advancement of electrical power density expansion. An LTCC-based gate driver with an LTCC-based optical isolator was developed and integrated into a fabricated 1.2kV SiC power module. This development was done specifically for high temperature applications as part of a wider research on the reliability of the integrated power module at higher temperatures. Therefore, this high temperature gate driver integrated SiC power module was tested from 25oC to 200oC. Double pulse testing of the fabricated integrated SiC power module was done to characterize the switching performance of the power module. The test results indicate a minimal voltage overshoot of approximately 3.5V during both the turn-on and turn-off periods. Additionally, the current overshoot ranges from ~5A to ~8A as the temperature increases from 25oC to 200oC. The results show good switching performance resulting in minimal losses over higher temperatures. Therefore, with these results, the integrated SiC power module can enhance better power density, and lower losses even in high temperature applications

Optocoupler Integration of LTCC-based Gate Driver in a SiC Power Module

The growing demand for electrical energy in today’s industrialized economy has driven the need for innovative approaches to meet diverse application requirements. Notably, advancements have been made in the field of power electronic systems, as reliable power electronic converters are essential for managing multiple power sources and loads. However, the development of these systems poses challenges related to power device switching speed, system weight and size, and power losses. The integration of a gate driver into a SiC power module offers a solution to many of these challenges, thereby driving the advancement of electrical power density expansion. An LTCC-based gate driver with an LTCC-based optical isolator was developed and integrated into a fabricated 1.2kV SiC power module. This development was done specifically for high temperature applications as part of a wider research on the reliability of the integrated power module at higher temperatures. Therefore, this high temperature gate driver integrated SiC power module was tested from 25oC to 200oC. Double pulse testing of the fabricated integrated SiC power module was done to characterize the switching performance of the power module. The test results indicate a minimal voltage overshoot of approximately 3.5V during both the turn-on and turn-off periods. Additionally, the current overshoot ranges from ~5A to ~8A as the temperature increases from 25oC to 200oC. The results show good switching performance resulting in minimal losses over higher temperatures. Therefore, with these results, the integrated SiC power module can enhance better power density, and lower losses even in high temperature applications

Characterizing and modeling methods for power converters

“Stable power delivery is becoming increasingly important in modern electronic devices, especially in applications with stringent requirements of its form factor. With the evolution of technology, the switching frequency in a power converter is pushed to a higher frequency range, e.g., several MHz or even higher, to decrease its size. However, the loss generated in the converter increases drastically due to the high switching frequency. In addition, a wide-band feedback controller is required to accommodate the high switching frequency in the converter. We focus on the characterization or modeling of the feedback control circuits and critical components in a switching power converter. A transient-simulation-oriented averaged continuous-time model is proposed to evaluate the transient output noise of a buck converter. The proposed modeling method is developed with time-domain waveforms, which enables a generalized modeling framework for current-mode controllers with constant and nonconstant switching frequencies. In this work, we mainly focus on characterization for two types of components: the switching components, including Si MOSFETs and GaN High-electron-mobility transistor (HEMT), and the magnetic core in an inductor. For the characterization of switching components, a set of test fixtures are designed to characterize the equivalent circuit of Si MOSFETs and GaN HEMTs. The frequency-dependent behaviors of Si MOSFETs are observed, which invalidate the conventional modeling methods for MOSFETs, especially for radiated emission (RE) prediction. For the characterization of magnetic cores, two different probe calibration methods are demonstrated. Accurate phase discrepancy characterization is allowed with the proposed method, which overcomes the main limitation in the conventional two-winding method. In addition, the proposed method supports wide-band loss measurement without resonance tuning, which supports core loss measurement for non-sinusoidal excitation”--Abstract, page iv

Characterization and optimization of a fast converter to control plasma instabilities in JT-60SA

Nella tesi è stato analizzato il comportamento di un convertitore a 4 quadranti con frequenza di commutazione di 60 kHz sul carico. Esso è necessario per controllare le instabilità di plasma nel futuro reattore a fusione JT-60SA, che otterrà il primo plasma nel 2019. Per effettuare l'analisi sono stati sviluppati dettagliati modelli del carico e del convertitore tramite Simulink e, infine, sono state proposte nuove ed originali soluzioni per migliorare le prestazioni del controllore

Design Approaches to Enhance Power Density in Power Converters for Traction Applications

This dissertation presents a design strategy to increase the power density for automotive Power Conversion Units (PCUs) consisting of DC-DC and DC-AC stages. The strategy significantly improves the volumetric power density, as evident by a proposed PCU constructed and tested having 55.6 kW/L, representing an 11.2 % improvement on the Department of Energy’s 2025 goal of 50 kW/L for the same power electronics architecture. The dissertation begins with a custom magnetic design procedure, based on optimization of a predetermined C-core geometrical relationship and custom Litz wire. It accounts for electrical and thermal tradeoffs to produce a magnetic structure to best accomplish volume and thermal constraints. This work is coupled with a control strategy for the DC-DC converter whereby a variable-frequency Discontinuous Conduction Mode (DCM) control is used to further reduce the required values of the passive components, to provide an increase in power density and a large improvement of low-power-level efficiency, experimentally demonstrated at full power through an 80 kW Interleaved Boost Converter. Integration of this enhanced DC-DC stage to the DC-AC stage requires a DC-Link capacitor, which hinders achieving power density targets. Increasing the switching frequency is an established method of reducing the size of passives. However, it is the RMS current sizing requirements that diminishes any gains achieved by raising the switching frequency. A synchronous carrier phase shift-based control algorithm, that aligns the output current of the boost stage with the input current of an inverter, is proposed to reduce the RMS current in the DC-Link capacitor by up to 25% and an average 20% smaller capacitor volume. Lastly, a new electrothermal platform based on paralleled discrete devices is presented for a 50 kW traction inverter. Embedded capacitors within the vacant volume of the hybrid material thermal management structure enables higher power density (155 kW/L) and significantly reduces cost

Design Approaches to Enhance Power Density in Power Converters for Traction Applications

This dissertation presents a design strategy to increase the power density for automotive Power Conversion Units (PCUs) consisting of DC-DC and DC-AC stages. The strategy significantly improves the volumetric power density, as evident by a proposed PCU constructed and tested having 55.6 kW/L, representing an 11.2 % improvement on the Department of Energy’s 2025 goal of 50 kW/L for the same power electronics architecture. The dissertation begins with a custom magnetic design procedure, based on optimization of a predetermined C-core geometrical relationship and custom Litz wire. It accounts for electrical and thermal tradeoffs to produce a magnetic structure to best accomplish volume and thermal constraints. This work is coupled with a control strategy for the DC-DC converter whereby a variable-frequency Discontinuous Conduction Mode (DCM) control is used to further reduce the required values of the passive components, to provide an increase in power density and a large improvement of low-power-level efficiency, experimentally demonstrated at full power through an 80 kW Interleaved Boost Converter. Integration of this enhanced DC-DC stage to the DC-AC stage requires a DC-Link capacitor, which hinders achieving power density targets. Increasing the switching frequency is an established method of reducing the size of passives. However, it is the RMS current sizing requirements that diminishes any gains achieved by raising the switching frequency. A synchronous carrier phase shift-based control algorithm, that aligns the output current of the boost stage with the input current of an inverter, is proposed to reduce the RMS current in the DC-Link capacitor by up to 25% and an average 20% smaller capacitor volume. Lastly, a new electrothermal platform based on paralleled discrete devices is presented for a 50 kW traction inverter. Embedded capacitors within the vacant volume of the hybrid material thermal management structure enables higher power density (155 kW/L) and significantly reduces cost