Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system

A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameters of p-n junction diodes, Schottky diodes, field effect transistors and bipolar junction transistors. The performance of the developed extraction techniques are apparent via comparing experimental data with Spice simulated data using the model parameter that is graphically extracted and also those extracted using optimization techniques. The performance of the developed extraction techniques has been demonstrated by comparing the experimental characteristics with Spice simulated curves using default parameters and model parameters extracted using graphical and optimization techniques. The relative excursions of the simulated I-V characteristics of most investigated devices were less than 2.5 % with respect to the experimental curves, which shows the accuracy and effectiveness of the developed system. A number of software routines have also been implemented under Matlab environment to extract the Spice model parameters for different electronic devices

Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs

In this paper, a compact dynamic and fully coupled electrothermal model for parasitic BJT latchup is presented and validated by measurements. The model can be used to enhance the reliability of the latest generation of commercially available power devices. BJT latchup can be triggered by body-diode reverse-recovery hard commutation with high dV/dt or from avalanche conduction during unclamped inductive switching. In the case of body-diode reverse recovery, the base current that initiates BJT latchup is calculated from the solution of the ambipolar diffusion equation describing the minority carrier distribution in the antiparallel p-i-n body diode. For hard commutation with high dV/dt, the displacement current of the drain-body charging capacitance is critical for BJT latchup, whereas for avalanche conduction, the base current is calculated from impact ionization. The parasitic BJT is implemented in Simulink using the Ebers-Moll model and the temperature is calculated using a thermal network matched to the transient thermal impedance characteristic of the devices. This model has been applied to CoolMOS and SiC MOSFETs. Measurements show that the model correctly predicts BJT latchup during reverse recovery as a function of forward-current density and temperature. The model presented, when calibrated correctly by device manufacturers and applications engineers, is capable of benchmarking the robustness of power MOSFETs

Reporte de formación complementaria en área de concentración en diseño electrónico de alta frecuencia

The document contains 3 projects that were developed followed by the concentration area of The High-Frequency Design of Electronics Circuits. These projects were: The 1st project is the Band-stop filter with a microstrip line, developed during the subject of High-Frequency Electronics Design. The 2nd project is the Modeling a strain gauge and conditioning circuit for a Natural Vacuum leak detection system. Developed during the subject Methods of Simulation of Electronic Circuits. The 3rd project is the Output capacitor optimization for a Low voltage Drop-Out (LDO) regulator using the space mapping method. Developed during the subject Modeling and Design of Circuits Based on Optimization

SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS FOR LARGE-SCALE LOW-POWER CRYOGENIC SENSING SYSTEMS

Cryogenic low noise amplifiers (LNAs) are one of the key components in many emerging applications such as radio astronomy or quantum computing in which a weak incoming signal needs to be read out. There have been extensive studies on the feasibility of leveraging silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) to implement cryogenic LNAs in the past. The deployment of such LNAs in the future large-scale systems in radio astronomy or quantum computing is contingent upon the possibility of developing LNAs with reduced DC power dissipation to enable the cooling of a large number of array elements inside a cryogenic cooler. In this dissertation, we focus on the cryogenic operation of SiGe HBTs at reduced supply voltages for the implementation of ultra low- power LNAs and their applications for scalable receiver systems. In addition, the limitations of the SiGe HBT cryogenic models for the operation at high current densities are investigated for the implementation of modern high speed SiGe HBT circuits