1,288 research outputs found
Improving Phase Change Memory Performance with Data Content Aware Access
A prominent characteristic of write operation in Phase-Change Memory (PCM) is
that its latency and energy are sensitive to the data to be written as well as
the content that is overwritten. We observe that overwriting unknown memory
content can incur significantly higher latency and energy compared to
overwriting known all-zeros or all-ones content. This is because all-zeros or
all-ones content is overwritten by programming the PCM cells only in one
direction, i.e., using either SET or RESET operations, not both. In this paper,
we propose data content aware PCM writes (DATACON), a new mechanism that
reduces the latency and energy of PCM writes by redirecting these requests to
overwrite memory locations containing all-zeros or all-ones. DATACON operates
in three steps. First, it estimates how much a PCM write access would benefit
from overwriting known content (e.g., all-zeros, or all-ones) by
comprehensively considering the number of set bits in the data to be written,
and the energy-latency trade-offs for SET and RESET operations in PCM. Second,
it translates the write address to a physical address within memory that
contains the best type of content to overwrite, and records this translation in
a table for future accesses. We exploit data access locality in workloads to
minimize the address translation overhead. Third, it re-initializes unused
memory locations with known all-zeros or all-ones content in a manner that does
not interfere with regular read and write accesses. DATACON overwrites unknown
content only when it is absolutely necessary to do so. We evaluate DATACON with
workloads from state-of-the-art machine learning applications, SPEC CPU2017,
and NAS Parallel Benchmarks. Results demonstrate that DATACON significantly
improves system performance and memory system energy consumption compared to
the best of performance-oriented state-of-the-art techniques.Comment: 18 pages, 21 figures, accepted at ACM SIGPLAN International Symposium
on Memory Management (ISMM
Exploiting Inter- and Intra-Memory Asymmetries for Data Mapping in Hybrid Tiered-Memories
Modern computing systems are embracing hybrid memory comprising of DRAM and
non-volatile memory (NVM) to combine the best properties of both memory
technologies, achieving low latency, high reliability, and high density. A
prominent characteristic of DRAM-NVM hybrid memory is that it has NVM access
latency much higher than DRAM access latency. We call this inter-memory
asymmetry. We observe that parasitic components on a long bitline are a major
source of high latency in both DRAM and NVM, and a significant factor
contributing to high-voltage operations in NVM, which impact their reliability.
We propose an architectural change, where each long bitline in DRAM and NVM is
split into two segments by an isolation transistor. One segment can be accessed
with lower latency and operating voltage than the other. By introducing tiers,
we enable non-uniform accesses within each memory type (which we call
intra-memory asymmetry), leading to performance and reliability trade-offs in
DRAM-NVM hybrid memory. We extend existing NVM-DRAM OS in three ways. First, we
exploit both inter- and intra-memory asymmetries to allocate and migrate memory
pages between the tiers in DRAM and NVM. Second, we improve the OS's page
allocation decisions by predicting the access intensity of a newly-referenced
memory page in a program and placing it to a matching tier during its initial
allocation. This minimizes page migrations during program execution, lowering
the performance overhead. Third, we propose a solution to migrate pages between
the tiers of the same memory without transferring data over the memory channel,
minimizing channel occupancy and improving performance. Our overall approach,
which we call MNEME, to enable and exploit asymmetries in DRAM-NVM hybrid
tiered memory improves both performance and reliability for both single-core
and multi-programmed workloads.Comment: 15 pages, 29 figures, accepted at ACM SIGPLAN International Symposium
on Memory Managemen
Multi-port Memory Design for Advanced Computer Architectures
In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the
access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port
SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises
stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor
sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures
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