Interface Circuits for Microsensor Integrated Systems

ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.

Beam Diagnosis and Lattice Modeling of the Fermilab Booster

Thesis (PhD) - Indiana University, Physics, 2005A realistic lattice model is a fundamental basis for the operation of a synchrotron. In this study various beam-based measurements, including orbit response matrix (ORM) and BPM turn-by-turn data are used to verify and calibrate the lattice model of the Fermilab Booster. In the ORM study, despite the strong correlation between the gradient parameters of adjacent magnets which prevents a full determination of the model parameters, an equivalent lattice model is obtained by imposing appropriate constraints. The fitted gradient errors of the focusing magnets are within the design tolerance and the results point to the orbit offsets in the sextupole field as the source of gradient errors. A new method, the independent component analysis (ICA) is introduced to analyze multiple BPM turn-by-turn data taken simultaneously around a synchrotron. This method makes use of the redundancy of the data and the time correlation of the source signals to isolate various components, such as betatron motion and synchrotron motion, from raw BPM data. By extracting clean coherent betatron motion from noisy data and separates out the betatron normal modes when there is linear coupling, the ICA method provides a convenient means to measure the beta functions and betatron phase advances. It also separates synchrotron motion from the BPM samples for dispersion function measurement. The ICA method has the capability to separate other perturbation signals and is robust over the contamination of bad BPMs. The application of the ICA method to the Booster has enabled the measurement of the linear lattice functions which are used to verify the existing lattice model. The transverse impedance and chromaticity are measured from turn-by-turn data using high precision tune measurements. Synchrotron motion is also observed in the BPM data. The emittance growth of the Booster is also studied by data taken with ion profile monitor (IPM). Sources of emittance growth are examined and an approach to cure the space charge induced emittance growth for low energy synchrotron beams is discussed

Learning Approaches to Analog and Mixed Signal Verification and Analysis

The increased integration and interaction of analog and digital components within a system has amplified the need for a fast, automated, combined analog, and digital verification methodology. There are many automated characterization, test, and verification methods used in practice for digital circuits, but analog and mixed signal circuits suffer from long simulation times brought on by transistor-level analysis. Due to the substantial amount of simulations required to properly characterize and verify an analog circuit, many undetected issues manifest themselves in the manufactured chips. Creating behavioral models, a circuit abstraction of analog components assists in reducing simulation time which allows for faster exploration of the design space. Traditionally, creating behavioral models for non-linear circuits is a manual process which relies heavily on design knowledge for proper parameter extraction and circuit abstraction. Manual modeling requires a high level of circuit knowledge and often fails to capture critical effects stemming from block interactions and second order device effects. For this reason, it is of interest to extract the models directly from the SPICE level descriptions so that these effects and interactions can be properly captured. As the devices are scaled, process variations have a more profound effect on the circuit behaviors and performances. Creating behavior models from the SPICE level descriptions, which include input parameters and a large process variation space, is a non-trivial task. In this dissertation, we focus on addressing various problems related to the design automation of analog and mixed signal circuits. Analog circuits are typically highly specialized and fined tuned to fit the desired specifications for any given system reducing the reusability of circuits from design to design. This hinders the advancement of automating various aspects of analog design, test, and layout. At the core of many automation techniques, simulations, or data collection are required. Unfortunately, for some complex analog circuits, a single simulation may take many days. This prohibits performing any type of behavior characterization or verification of the circuit. This leads us to the first fundamental problem with the automation of analog devices. How can we reduce the simulation cost while maintaining the robustness of transistor level simulations? As analog circuits can vary vastly from one design to the next and are hardly ever comprised of standard library based building blocks, the second fundamental question is how to create automated processes that are general enough to be applied to all or most circuit types? Finally, what circuit characteristics can we utilize to enhance the automation procedures? The objective of this dissertation is to explore these questions and provide suitable evidence that they can be answered. We begin by exploring machine learning techniques to model the design space using minimal simulation effort. Circuit partitioning is employed to reduce the complexity of the machine learning algorithms. Using the same partitioning algorithm we further explore the behavior characterization of analog circuits undergoing process variation. The circuit partitioning is general enough to be used by any CMOS based analog circuit. The ideas and learning gained from behavioral modeling during behavior characterization are used to improve the simulation through event propagation, input space search, complexity and information measurements. The reduction of the input space and behavioral modeling of low complexity, low information primitive elements reduces the simulation time of large analog and mixed signal circuits by 50-75%. The method is extended and applied to assist in analyzing analog circuit layout. All of the proposed methods are implemented on analog circuits ranging from small benchmark circuits to large, highly complex and specialized circuits. The proposed dependency based partitioning of large analog circuits in the time domain allows for fast identification of highly sensitive transistors as well as provides a natural division of circuit components. Modeling analog circuits in the time domain with this partitioning technique and SVM learning algorithms allows for very fast transient behavior predictions, three orders of magnitude faster than traditional simulators, while maintaining 95% accuracy. Analog verification can be explored through a reduction of simulation time by utilizing the partitions, information and complexity measures, and input space reduction. Behavioral models are created using supervised learning techniques for detected primitive elements. We will show the effectiveness of the method on four analog circuits where the simulation time is decreased by 55-75%. Utilizing the reduced simulation method, critical nodes can be found quickly and efficiently. The nodes found using this method match those found by an experienced layout engineer, but are detected automatically given the design and input specifications. The technique is further extended to find the tolerance of transistors to both process variation and power supply fluctuation. This information allows for corrections in layout overdesign or guidance in placing noise reducing components such as guard rings or decoupling capacitors. The proposed approaches significantly reduce the simulation time required to perform the tasks traditionally, maintain high accuracy, and can be automated

Extended event-driven modeling of a ΣΔ-fractional-N PLL including non-ideal effects

In modern systems PLLs are widely used e.g. for frequency synthesis. Since this feedback control system exhibits a mixed-signal nature, it is challenging to use general theory to characterize its dynamic behavior. Additionally, due to the low and high frequency parts, simulations utilizing either a behavioral or transistor-level model are not computer resource efficient. To overcome this the modular and enhanced Event-Driven Model can be used. Since the existing Event-Driven Model is neither applicable to take different divider delays into account nor to consider a ΣΔ-Modulator, this work focuses on the extension of this modeling approach considering a ΣΔ-Fractional-N PLL with non-ideal effects like dead zone, leakage current and different divider delays. This extended model is validated with transistor-level simulations and is used to explore the impact of non-ideal effects on the loop characteristics

Fiabilisation de convertisseurs analogique-numérique à modulation Sigma-Delta

This thesis concentrates on reliability-aware methodology development, reliability analysis based on simulation as well as failure prediction of CMOS 65nm analog and mixed signal (AMS) ICs. Sigma-Delta modulators are concerned as the object of reliability study at system level. A hierarchical statistical approach for reliability is proposed to analysis the performance of Sigma-Delta modulators under ageing effects and process variations. Statistical methods are combined into this analysis flow.Ce travail de thèse a porté sur des problèmes de fiabilité de circuits intégrés en technologie CMOS 65 nm, en particulier sur la conception en vue de la fiabilité, la simulation et l'amélioration de la fiabilité. Les mécanismes dominants de vieillissement HCI et NBTI ainsi que la variation du processus ont été étudiés et évalués quantitativement au niveau du circuit et au niveau du système. Ces méthodes ont été appliquées aux modulateurs Sigma-Delta afin de déterminer la fiabilité de ce type de composant qui est très utilisé

Fiabilisation de Convertisseurs Analogique-Num´erique a Modulation Sigma-Delta

Due to the continuously scaling down of CMOS technology, system-on-chips (SoCs) reliability becomes important in sub-90 nm CMOS node. Integrated circuits and systems applied to aerospace, avionic, vehicle transport and biomedicine are highly sensitive to reliability problems such as ageing mechanisms and parametric process variations. Novel SoCs with new materials and architectures of high complexity further aggravate reliability as a critical aspect of process integration. For instance, random and systematic defects as well as parametric process variations have a large influence on quality and yield of the manufactured ICs, right after production. During ICs usage time, time-dependent ageing mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) can significantly degrade ICs performance.La fiabilit´e des ICs est d´efinie ainsi : la capacit´e d’un circuit ou un syst`eme int´egr´e `amaintenir ses param`etres durant une p´eriode donn´ee sous des conditions d´efinies. Les rapportsITRS 2011 consid`ere la fiabilit´e comme un aspect critique du processus d’int´egration.Par cons´equent, il faut faire appel des m´ethodologies innovatrices prenant en comptela fiabilit´e afin d’assurer la fonctionnalit´e du SoCs et la fiabilit´e dans les technologiesCMOS `a l’´echelle nanom´etrique. Cela nous permettra de d´evelopper des m´ethodologiesind´ependantes du design et de la technologie CMOS, en revanche, sp´ecialis´ees en fiabilit´e

MIMO Systems

In recent years, it was realized that the MIMO communication systems seems to be inevitable in accelerated evolution of high data rates applications due to their potential to dramatically increase the spectral efficiency and simultaneously sending individual information to the corresponding users in wireless systems. This book, intends to provide highlights of the current research topics in the field of MIMO system, to offer a snapshot of the recent advances and major issues faced today by the researchers in the MIMO related areas. The book is written by specialists working in universities and research centers all over the world to cover the fundamental principles and main advanced topics on high data rates wireless communications systems over MIMO channels. Moreover, the book has the advantage of providing a collection of applications that are completely independent and self-contained; thus, the interested reader can choose any chapter and skip to another without losing continuity

CMOS SPAD-based image sensor for single photon counting and time of flight imaging

The facility to capture the arrival of a single photon, is the fundamental limit to the detection of quantised electromagnetic radiation. An image sensor capable of capturing a picture with this ultimate optical and temporal precision is the pinnacle of photo-sensing. The creation of high spatial resolution, single photon sensitive, and time-resolved image sensors in complementary metal oxide semiconductor (CMOS) technology offers numerous benefits in a wide field of applications. These CMOS devices will be suitable to replace high sensitivity charge-coupled device (CCD) technology (electron-multiplied or electron bombarded) with significantly lower cost and comparable performance in low light or high speed scenarios. For example, with temporal resolution in the order of nano and picoseconds, detailed three-dimensional (3D) pictures can be formed by measuring the time of flight (TOF) of a light pulse. High frame rate imaging of single photons can yield new capabilities in super-resolution microscopy. Also, the imaging of quantum effects such as the entanglement of photons may be realised. The goal of this research project is the development of such an image sensor by exploiting single photon avalanche diodes (SPAD) in advanced imaging-specific 130nm front side illuminated (FSI) CMOS technology. SPADs have three key combined advantages over other imaging technologies: single photon sensitivity, picosecond temporal resolution and the facility to be integrated in standard CMOS technology. Analogue techniques are employed to create an efficient and compact imager that is scalable to mega-pixel arrays. A SPAD-based image sensor is described with 320 by 240 pixels at a pitch of 8μm and an optical efficiency or fill-factor of 26.8%. Each pixel comprises a SPAD with a hybrid analogue counting and memory circuit that makes novel use of a low-power charge transfer amplifier. Global shutter single photon counting images are captured. These exhibit photon shot noise limited statistics with unprecedented low input-referred noise at an equivalent of 0.06 electrons. The CMOS image sensor (CIS) trends of shrinking pixels, increasing array sizes, decreasing read noise, fast readout and oversampled image formation are projected towards the formation of binary single photon imagers or quanta image sensors (QIS). In a binary digital image capture mode, the image sensor offers a look-ahead to the properties and performance of future QISs with 20,000 binary frames per second readout with a bit error rate of 1.7 x 10-3. The bit density, or cumulative binary intensity, against exposure performance of this image sensor is in the shape of the famous Hurter and Driffield densitometry curves of photographic film. Oversampled time-gated binary image capture is demonstrated, capturing 3D TOF images with 3.8cm precision in a 60cm range