Performance Characterization of Multi-threaded Graph Processing Applications on Intel Many-Integrated-Core Architecture

Intel Xeon Phi many-integrated-core (MIC) architectures usher in a new era of terascale integration. Among emerging killer applications, parallel graph processing has been a critical technique to analyze connected data. In this paper, we empirically evaluate various computing platforms including an Intel Xeon E5 CPU, a Nvidia Geforce GTX1070 GPU and an Xeon Phi 7210 processor codenamed Knights Landing (KNL) in the domain of parallel graph processing. We show that the KNL gains encouraging performance when processing graphs, so that it can become a promising solution to accelerating multi-threaded graph applications. We further characterize the impact of KNL architectural enhancements on the performance of a state-of-the art graph framework.We have four key observations: 1 Different graph applications require distinctive numbers of threads to reach the peak performance. For the same application, various datasets need even different numbers of threads to achieve the best performance. 2 Only a few graph applications benefit from the high bandwidth MCDRAM, while others favor the low latency DDR4 DRAM. 3 Vector processing units executing AVX512 SIMD instructions on KNLs are underutilized when running the state-of-the-art graph framework. 4 The sub-NUMA cache clustering mode offering the lowest local memory access latency hurts the performance of graph benchmarks that are lack of NUMA awareness. At last, We suggest future works including system auto-tuning tools and graph framework optimizations to fully exploit the potential of KNL for parallel graph processing.Comment: published as L. Jiang, L. Chen and J. Qiu, "Performance Characterization of Multi-threaded Graph Processing Applications on Many-Integrated-Core Architecture," 2018 IEEE International Symposium on Performance Analysis of Systems and Software (ISPASS), Belfast, United Kingdom, 2018, pp. 199-20

Doctor of Philosophy in Computing

dissertatio

Doctor of Philosophy

dissertationThe computing landscape is undergoing a major change, primarily enabled by ubiquitous wireless networks and the rapid increase in the use of mobile devices which access a web-based information infrastructure. It is expected that most intensive computing may either happen in servers housed in large datacenters (warehouse- scale computers), e.g., cloud computing and other web services, or in many-core high-performance computing (HPC) platforms in scientific labs. It is clear that the primary challenge to scaling such computing systems into the exascale realm is the efficient supply of large amounts of data to hundreds or thousands of compute cores, i.e., building an efficient memory system. Main memory systems are at an inflection point, due to the convergence of several major application and technology trends. Examples include the increasing importance of energy consumption, reduced access stream locality, increasing failure rates, limited pin counts, increasing heterogeneity and complexity, and the diminished importance of cost-per-bit. In light of these trends, the memory system requires a major overhaul. The key to architecting the next generation of memory systems is a combination of the prudent incorporation of novel technologies, and a fundamental rethinking of certain conventional design decisions. In this dissertation, we study every major element of the memory system - the memory chip, the processor-memory channel, the memory access mechanism, and memory reliability, and identify the key bottlenecks to efficiency. Based on this, we propose a novel main memory system with the following innovative features: (i) overfetch-aware re-organized chips, (ii) low-cost silicon photonic memory channels, (iii) largely autonomous memory modules with a packet-based interface to the proces- sor, and (iv) a RAID-based reliability mechanism. Such a system is energy-efficient, high-performance, low-complexity, reliable, and cost-effective, making it ideally suited to meet the requirements of future large-scale computing systems

Designing Low Cost Error Correction Schemes for Improving Memory Reliability

abstract: Memory systems are becoming increasingly error-prone, and thus guaranteeing their reliability is a major challenge. In this dissertation, new techniques to improve the reliability of both 2D and 3D dynamic random access memory (DRAM) systems are presented. The proposed schemes have higher reliability than current systems but with lower power, better performance and lower hardware cost. First, a low overhead solution that improves the reliability of commodity DRAM systems with no change in the existing memory architecture is presented. Specifically, five erasure and error correction (E-ECC) schemes are proposed that provide at least Chipkill-Correct protection for x4 (Schemes 1, 2 and 3), x8 (Scheme 4) and x16 (Scheme 5) DRAM systems. All schemes have superior error correction performance due to the use of strong symbol-based codes. In addition, the use of erasure codes extends the lifetime of the 2D DRAM systems. Next, two error correction schemes are presented for 3D DRAM memory systems. The first scheme is a rate-adaptive, two-tiered error correction scheme (RATT-ECC) that provides strong reliability (10^10x) reduction in raw FIT rate) for an HBM-like 3D DRAM system that services CPU applications. The rate-adaptive feature of RATT-ECC enables permanent bank failures to be handled through sparing. It can also be used to significantly reduce the refresh power consumption without decreasing the reliability and timing performance. The second scheme is a two-tiered error correction scheme (Config-ECC) that supports different sized accesses in GPU applications with strong reliability. It addresses the mismatch between data access size and fixed sized ECC scheme by designing a product code based flexible scheme. Config-ECC is built around a core unit designed for 32B access with a simple extension to support 64B and 128B accesses. Compared to fixed 32B and 64B ECC schemes, Config-ECC reduces the failure in time (FIT) rate by 200x and 20x, respectively. It also reduces the memory energy by 17% (in the dynamic mode) and 21% (in the static mode) compared to a state-of-the-art fixed 64B ECC scheme.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Performance Implications of NoCs on 3D-Stacked Memories: Insights from the Hybrid Memory Cube

Memories that exploit three-dimensional (3D)-stacking technology, which integrate memory and logic dies in a single stack, are becoming popular. These memories, such as Hybrid Memory Cube (HMC), utilize a network-on-chip (NoC) design for connecting their internal structural organizations. This novel usage of NoC, in addition to aiding processing-in-memory capabilities, enables numerous benefits such as high bandwidth and memory-level parallelism. However, the implications of NoCs on the characteristics of 3D-stacked memories in terms of memory access latency and bandwidth have not been fully explored. This paper addresses this knowledge gap by (i) characterizing an HMC prototype on the AC-510 accelerator board and revealing its access latency behaviors, and (ii) by investigating the implications of such behaviors on system and software designs

Scalable and Accurate Memory System Simulation

Memory systems today possess more complexity than ever. On one hand, main memory technology has a much more diverse portfolio. Other than the mainstream DDR DRAMs, a variety of DRAM protocols have been proliferating in certain domains. Non-Volatile Memory(NVM) also finally has commodity main memory products, introducing more heterogeneity to the main memory media. On the other hand, the scale of computer systems, from personal computers, server computers, to high performance computing systems, has been growing in response to increasing computing demand. Memory systems have to be able to keep scaling to avoid bottlenecking the whole system. However, current memory simulation works cannot accurately or efficiently model these developments, making it hard for researchers and developers to evaluate or to optimize designs for memory systems. In this study, we attack these issues from multiple angles. First, we develop a fast and validated cycle accurate main memory simulator that can accurately model almost all existing DRAM protocols and some NVM protocols, and it can be easily extended to support upcoming protocols as well. We showcase this simulator by conducting a thorough characterization over existing DRAM protocols and provide insights on memory system designs. Secondly, to efficiently simulate the increasingly paralleled memory systems, we propose a lax synchronization model that allows efficient parallel DRAM simulation. We build the first ever practical parallel DRAM simulator that can speedup the simulation by up to a factor of three with single digit percentage loss in accuracy comparing to cycle accurate simulations. We also developed mitigation schemes to further improve the accuracy with no additional performance cost. Moreover, we discuss the limitation of cycle accurate models, and explore the possibility of alternative modeling of DRAM. We propose a novel approach that converts DRAM timing simulation into a classification problem. By doing so we can make predictions on DRAM latency for each memory request upon first sight, which makes it compatible for scalable architecture simulation frameworks. We developed prototypes based on various machine learning models and they demonstrate excellent performance and accuracy results that makes them a promising alternative to cycle accurate models. Finally, for large scale memory systems where data movement is often the performance limiting factor, we propose a set of interconnect topologies and implement them in a parallel discrete event simulation framework. We evaluate the proposed topologies through simulation and prove that their scalability and performance exceeds existing topologies with increasing system size or workloads