128 research outputs found

    Performance and Reliability Study and Exploration of NAND Flash-based Solid State Drives

    Get PDF
    The research that stems from my doctoral dissertation focuses on addressing essential challenges in developing techniques that utilize solid-state memory technologies (with emphasis on NAND flash memory) from device, circuit, architecture, and system perspectives in order to exploit their true potential for improving I/O performance in high-performance computing systems. These challenges include not only the performance quirks arising from the physical nature of NAND flash memory, e.g., the inability to modify data in-place, read/write performance asymmetry, and slow and constrained erase functionality, but also the reliability drawbacks that limits solid state drives (SSDs) from widely deployed. To address these challenges, I have proposed, analyzed, and evaluated the I/O scheduling schemes, strategies for storage space virtualization, and data protection methods, to boost the performance and reliability of SSDs

    Towards Design and Analysis For High-Performance and Reliable SSDs

    Get PDF
    NAND Flash-based Solid State Disks have many attractive technical merits, such as low power consumption, light weight, shock resistance, sustainability of hotter operation regimes, and extraordinarily high performance for random read access, which makes SSDs immensely popular and be widely employed in different types of environments including portable devices, personal computers, large data centers, and distributed data systems. However, current SSDs still suffer from several critical inherent limitations, such as the inability of in-place-update, asymmetric read and write performance, slow garbage collection processes, limited endurance, and degraded write performance with the adoption of MLC and TLC techniques. To alleviate these limitations, we propose optimizations from both specific outside applications layer and SSDs\u27 internal layer. Since SSDs are good compromise between the performance and price, so SSDs are widely deployed as second layer caches sitting between DRAMs and hard disks to boost the system performance. Due to the special properties of SSDs such as the internal garbage collection processes and limited lifetime, traditional cache devices like DRAM and SRAM based optimizations might not work consistently for SSD-based cache. Therefore, for the outside applications layer, our work focus on integrating the special properties of SSDs into the optimizations of SSD caches. Moreover, our work also involves the alleviation of the increased Flash write latency and ECC complexity due to the adoption of MLC and TLC technologies by analyzing the real work workloads

    A (Nearly) Free Lunch:Extending NAND Flash Lifetime by Exploiting Neglected Physical Properties

    Get PDF
    NAND flash is a key storage technology in modern computing systems. Without it, many devices would probably not exist today or would at least not benefit from as many features. The very large success of this technology motivated massive efforts to scale it down in order to increase its density further. However, NAND flash is currently facing physical limitations that prevent it reaching smaller cell sizes without severely reducing its storage reliability and lifetime. Accordingly, in the present thesis we aim at relieving some constraints from device manufacturing by addressing flash irregularities at a higher level. For example, we acknowledge the fact that process variation plus other factors render some regions of a flash device more sensitive than others. This difference usually leads to sensitive regions exhausting their lifetime early, which then causes the device to become unusable, while the rest of the device is still healthy, yet not exploitable. Consequently, we propose to postpone this exhaustion point with new strategies that require minimal resources to be implemented and effectively extend flash devices lifetime. Sometimes, our strategies involve unconventional methods to access the flash that are not supported by specification document and, therefore, should not be used lightly. Hence, we also present thorough characterization experiments on actual NAND flash chips to validate these methods and model their effect on a flash device. Finally, we evaluate the performance of our methods by implementing a trace-driven flash device simulator and execute a large set of realistic disk traces. Overall, we exploit properties that are either neglected or not understood to propose methods that are nearly free to implement and systematically extend NAND flash lifetime. We are convinced that future NAND flash architectures will regularly bring radical physical changes, which will inevitably come together with a new set of physical properties to investigate and to exploit

    Software for Exascale Computing - SPPEXA 2016-2019

    Get PDF
    This open access book summarizes the research done and results obtained in the second funding phase of the Priority Program 1648 "Software for Exascale Computing" (SPPEXA) of the German Research Foundation (DFG) presented at the SPPEXA Symposium in Dresden during October 21-23, 2019. In that respect, it both represents a continuation of Vol. 113 in Springer’s series Lecture Notes in Computational Science and Engineering, the corresponding report of SPPEXA’s first funding phase, and provides an overview of SPPEXA’s contributions towards exascale computing in today's sumpercomputer technology. The individual chapters address one or more of the research directions (1) computational algorithms, (2) system software, (3) application software, (4) data management and exploration, (5) programming, and (6) software tools. The book has an interdisciplinary appeal: scholars from computational sub-fields in computer science, mathematics, physics, or engineering will find it of particular interest

    Gestión de jerarquías de memoria híbridas a nivel de sistema

    Get PDF
    Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

    Applications in Electronics Pervading Industry, Environment and Society

    Get PDF
    This book features the manuscripts accepted for the Special Issue “Applications in Electronics Pervading Industry, Environment and Society—Sensing Systems and Pervasive Intelligence” of the MDPI journal Sensors. Most of the papers come from a selection of the best papers of the 2019 edition of the “Applications in Electronics Pervading Industry, Environment and Society” (APPLEPIES) Conference, which was held in November 2019. All these papers have been significantly enhanced with novel experimental results. The papers give an overview of the trends in research and development activities concerning the pervasive application of electronics in industry, the environment, and society. The focus of these papers is on cyber physical systems (CPS), with research proposals for new sensor acquisition and ADC (analog to digital converter) methods, high-speed communication systems, cybersecurity, big data management, and data processing including emerging machine learning techniques. Physical implementation aspects are discussed as well as the trade-off found between functional performance and hardware/system costs
    corecore