Improving DRAM Performance by Parallelizing Refreshes with Accesses

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests while being refreshed. DRAM designed for mobile platforms, LPDDR DRAM, supports an enhanced mode, called per-bank refresh, that refreshes cells at the bank level. This enables a bank to be accessed while another in the same rank is being refreshed, alleviating part of the negative performance impact of refreshes. However, there are two shortcomings of per-bank refresh. First, the per-bank refresh scheduling scheme does not exploit the full potential of overlapping refreshes with accesses across banks because it restricts the banks to be refreshed in a sequential round-robin order. Second, accesses to a bank that is being refreshed have to wait. To mitigate the negative performance impact of DRAM refresh, we propose two complementary mechanisms, DARP (Dynamic Access Refresh Parallelization) and SARP (Subarray Access Refresh Parallelization). The goal is to address the drawbacks of per-bank refresh by building more efficient techniques to parallelize refreshes and accesses within DRAM. First, instead of issuing per-bank refreshes in a round-robin order, DARP issues per-bank refreshes to idle banks in an out-of-order manner. Furthermore, DARP schedules refreshes during intervals when a batch of writes are draining to DRAM. Second, SARP exploits the existence of mostly-independent subarrays within a bank. With minor modifications to DRAM organization, it allows a bank to serve memory accesses to an idle subarray while another subarray is being refreshed. Extensive evaluations show that our mechanisms improve system performance and energy efficiency compared to state-of-the-art refresh policies and the benefit increases as DRAM density increases.Comment: The original paper published in the International Symposium on High-Performance Computer Architecture (HPCA) contains an error. The arxiv version has an erratum that describes the error and the fix for i

Improving Processor Design by Exploiting Performance Variance

Programs exhibit significant performance variance in their access to microarchitectural structures. There are three types of performance variance. First, semantically equivalent programs running on the same system can yield different performance due to characteristics of microarchitectural structures. Second, program phase behavior varies significantly. Third, different types of operations on microarchitectural structure can lead to different performance. In this dissertation, we explore the performance variance and propose techniques to improve the processor design. We explore performance variance caused by microarchitectural structures and propose program interferometry, a technique that perturbs benchmark executables to yield a wide variety of performance points without changing program semantics or other important execution characteristics such as the number of retired instructions. By observing the behavior of the benchmarks over a range of branch prediction accuracies, we can estimate the impact of a microarchitectural optimization optimization and not the rest of the microarchitecture. We explore performance variance caused by phase changes and develop prediction-driven last-level cache (LLC) writeback techniques. We propose a rank idle time prediction driven LLC writeback technique and a last-write prediction driven LLC writeback technique. These techniques improve performance by reducing the write-induced interference. We explore performance variance caused by different types of operations to Non-Volatile Memory (NVM) and propose LLC management policies to reduce write overhead of NVM.We propose an adaptive placement and migration policy for an STT-RAM-based hybrid cache and writeback aware dynamic cache management for NVM-based main memory system. These techniques reduce write latency and write energy, thus leading to performance improvement and energy reduction

Staged reads: mitigating the impact of DRAM writes on DRAM reads

Journal ArticleMain memory latencies have always been a concern for system performance. Given that reads are on the criti- cal path for CPU progress, reads must be prioritized over writes. However, writes must be eventually processed and they often delay pending reads. In fact, a single channel in the main memory system offers almost no parallelism between reads and writes. This is because a single off-chip memory bus is shared by reads and writes and the direction of the bus has to be explicitly turned around when switching from writes to reads. This is an expensive operation and its cost is amortized by carrying out a burst of writes or reads every time the bus direction is switched. As a result, no reads can be processed while a memory channel is busy servicing writes. This paper proposes a novel mechanism to boost read-write parallelism and perform useful components of read operations even when the memory system is busy performing writes. If some of the banks are busy servicing writes, we start issuing reads to the other idle banks. The results of these reads are stored in a few registers near the memory chip's I/O pads. These results are quickly returned immediately following the bus turnaround. The process is referred to as a Staged Read because it decouples a single read operation into two stages, with the first step being performed in parallel with writes. This innovation can also be viewed as a form of prefetch that is internal to a memory chip. The proposed tech- nique works best when there is bank imbalance in the write stream. We also introduce a write scheduling algorithm that artificially creates bank imbalance and allows useful read operations to be performed during the write drain. Across a suite of memory-intensive workloads, we show that Staged Reads can boost throughput by up to 33% (average 7%) with an average DRAM access latency improvement of 17%, while incurring a very small cost (0.25%) in terms of memory chip area. The throughput improvements are even greater when considering write-intensive work-loads (average 11%) or future systems (average 12%)

Understanding and Improving the Latency of DRAM-Based Memory Systems

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic random-access memory), which has been used as the physical substrate for main memory. In stark contrast with capacity and bandwidth, DRAM latency has remained almost constant, reducing by only 1.3x in the same time frame. Therefore, long DRAM latency continues to be a critical performance bottleneck in modern systems. Increasing core counts, and the emergence of increasingly more data-intensive and latency-critical applications further stress the importance of providing low-latency memory access. In this dissertation, we identify three main problems that contribute significantly to long latency of DRAM accesses. To address these problems, we present a series of new techniques. Our new techniques significantly improve both system performance and energy efficiency. We also examine the critical relationship between supply voltage and latency in modern DRAM chips and develop new mechanisms that exploit this voltage-latency trade-off to improve energy efficiency. The key conclusion of this dissertation is that augmenting DRAM architecture with simple and low-cost features, and developing a better understanding of manufactured DRAM chips together lead to significant memory latency reduction as well as energy efficiency improvement. We hope and believe that the proposed architectural techniques and the detailed experimental data and observations on real commodity DRAM chips presented in this dissertation will enable development of other new mechanisms to improve the performance, energy efficiency, or reliability of future memory systems.Comment: PhD Dissertatio

Re-designing Main Memory Subsystems with Emerging Monolithic 3D (M3D) Integration and Phase Change Memory Technologies

Over the past two decades, Dynamic Random-Access Memory (DRAM) has emerged as the dominant technology for implementing the main memory subsystems of all types of computing systems. However, inferring from several recent trends, computer architects in both the industry and academia have widely accepted that the density (memory capacity per chip area) and latency of DRAM based main memory subsystems cannot sufficiently scale in the future to meet the requirements of future data-centric workloads related to Artificial Intelligence (AI), Big Data, and Internet-of-Things (IoT). In fact, the achievable density and access latency in main memory subsystems presents a very fundamental trade-off. Pushing for a higher density inevitably increases access latency, and pushing for a reduced access latency often leads to a decreased density. This trade-off is so fundamental in DRAM based main memory subsystems that merely looking to re-architect DRAM subsystems cannot improve this trade-off, unless disruptive technological advancements are realized for implementing main memory subsystems. In this thesis, we focus on two key contributions to overcome the density (represented as the total chip area for the given capacity) and access latency related challenges in main memory subsystems. First, we show that the fundamental area-latency trade-offs in DRAM can be significantly improved by redesigning the DRAM cell-array structure using the emerging monolithic 3D (M3D) integration technology. A DRAM bank structure can be split across two or more M3D-integrated tiers on the same DRAM chip, to consequently be able to significantly reduce the total on-chip area occupancy of the DRAM bank and its access peripherals. This approach is fundamentally different from the well known approach of through-silicon vias (TSVs)-based 3D stacking of DRAM tiers. This is because the M3D integration based approach does not require a separate DRAM chip per tier, whereas the 3D-stacking based approach does. Our evaluation results for PARSEC benchmarks show that our designed M3D DRAM cellarray organizations can yield up to 9.56% less latency and up to 21.21% less energy-delay product (EDP), with up to 14% less DRAM die area, compared to the conventional 2D DDR4 DRAM. Second, we demonstrate a pathway for eliminating the write disturbance errors in single-level-cell PCM, thereby positioning the PCM technology, which has inherently more relaxed density and latency trade-off compared to DRAM, as a more viable option for replacing the DRAM technology. We introduce low-temperature partial-RESET operations for writing ‘0’s in PCM cells. Compared to traditional operations that write \u270\u27s in PCM cells, partial-RESET operations do not cause disturbance errors in neighboring cells during PCM writes. The overarching theme that connects the two individual contributions into this single thesis is the density versus latency argument. The existing PCM technology has 3 to 4× higher write latency compared to DRAM; nevertheless, the existing PCM technology can store 2 to 4 bits in a single cell compared to one bit per cell storage capacity of DRAM. Therefore, unlike DRAM, it becomes possible to increase the density of PCM without consequently increasing PCM latency. In other words, PCM exhibits inherently improved (more relaxed) density and latency trade-off. Thus, both of our contributions in this thesis, the first contribution of re-designing DRAM with M3D integration technology and the second contribution of making the PCM technology a more viable replacement of DRAM by eliminating the write disturbance errors in PCM, connect to the common overarching goal of improving the density and latency trade-off in main memory subsystems. In addition, we also discuss in this thesis possible future research directions that are aimed at extending the impacts of our proposed ideas so that they can transform the performance of main memory subsystems of the future

BuMP: Bulk Memory Access Prediction and Streaming

With the end of Dennard scaling, server power has emerged as the limiting factor in the quest for more capable datacenters. Without the benefit of supply voltage scaling, it is essential to lower the energy per operation to improve server efficiency. As the industry moves to lean-core server processors, the energy bottleneck is shifting toward main memory as a chief source of server energy consumption in modern datacenters. Maximizing the energy efficiency of today's DRAM chips and interfaces requires amortizing the costly DRAM page activations over multiple row buffer accesses. This work introduces Bulk Memory Access Prediction and Streaming, or BuMP. We make the observation that a significant fraction (59-79%) of all memory accesses fall into DRAM pages with high access density, meaning that the majority of their cache blocks will be accessed within a modest time frame of the first access. Accesses to high-density DRAM pages include not only memory reads in response to load instructions, but also reads stemming from store instructions as well as memory writes upon a dirty LLC eviction. The remaining accesses go to low-density pages and virtually unpredictable reference patterns (e.g., hashed key lookups). BuMP employs a low-cost predictor to identify high-density pages and triggers bulk transfer operations upon the first read or write to the page. In doing so, BuMP enforces high row buffer locality where it is profitable, thereby reducing DRAM energy per access by 23%, and improves server throughput by 11% across a wide range of server applications

Adaptive thread and memory access schelduling in chip multiprocessors

Ankara : The Department of Computer Engineering and the Graduate School of Engineering and Science of Bilkent University, 2013.Thesis (Master's) -- Bilkent University, 2013.Includes bibliographical references leaves 76-81.The full potential of chip multiprocessors remains unexploited due to architecture oblivious thread schedulers used in operating systems, and thread-oblivious memory access schedulers used in off-chip main memory controllers. For the thread scheduling, we introduce an adaptive cache-hierarchy-aware scheduler that tries to schedule threads in a way that inter-thread contention is minimized. A novel multi-metric scoring scheme is used that specifies the L1 cache access characteristics of a thread. The scheduling decisions are made based on multi-metric scores of threads. For the memory access scheduling, we introduce an adaptive compute-phase prediction and thread prioritization scheme that efficiently categorize threads based on execution characteristics and provides fine-grained prioritization that allows to differentiate threads and prioritize their memory access requests accordingly.Aktürk, İsmailM.S